首页 |元器件品牌

ZVNL120ASMTA [ZETEX]

Small Signal Field-Effect Transistor, 0.18A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 COMPATIBLE, E-LINE PACKAGE-3;
ZVNL120ASMTA
型号： ZVNL120ASMTA
厂家： ZETEX SEMICONDUCTORS    ZETEX SEMICONDUCTORS
描述：

Small Signal Field-Effect Transistor, 0.18A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 COMPATIBLE, E-LINE PACKAGE-3
文件： 总3页 (文件大小：53K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
 查看货源
N-CHANNEL ENHANCEMENT  
MODE VERTICAL DMOS FET  
ZVNL120A  
ISSUE 2 – MARCH 94  
FEATURES  
*
*
*
200 Volt VDS  
RDS(on)=10Ω  
Low threshold  
D
G
S
APPLICATIONS  
Telephone handsets  
*
E-Line  
TO92 Compatible  
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
S YMBOL  
VDS  
VALUE  
UNIT  
V
Dra in -S o u rce Vo lta g e  
200  
180  
Co n tin u o u s Drain Cu rren t at Ta m b=25°C  
Pu ls ed Dra in Cu rre n t  
ID  
m A  
A
IDM  
2
Ga te S o u rce Vo lta g e  
VGS  
V
± 20  
Po w er Dis s ip a tio n a t Ta m b=25°C  
Op e ratin g a n d S to ra g e Te m p e ratu re Ra n g e  
Pto t  
700  
m W  
°C  
Tj:Ts tg  
-55 to +150  
ELECTRICAL CHARACTERISTICS (at T  
= 25°C unless otherw ise stated).  
am b  
PARAMETER  
S YMBOL MIN. MAX. UNIT CONDITIONS .  
Dra in -S o u rce Bre a kd o w n  
Vo lta g e  
BVDS S  
200  
V
ID=1m A, VGS=0V  
Ga te-S o u rce Th re s h o ld  
Vo lta g e  
VGS (th )  
0.5  
1.5  
V
ID=1m A, VDS= VGS  
Ga te-Bo d y Lea ka g e  
IGS S  
IDS S  
100  
n A  
V
GS=± 20V, VDS=0V  
Ze ro Ga te Vo lta g e Dra in  
Cu rre n t  
10  
100  
VDS=200 V, VGS=0  
VDS=160 V, VGS=0V, T=125°C(2)  
µA  
µA  
On -S ta te Dra in Cu rre n t(1)  
ID(o n )  
500  
200  
m A  
VDS=25 V, VGS=5V  
VGS=5V,ID=250m A  
S tatic Drain -S o u rce On -S ta te  
Res ista n ce (1)  
RDS (o n )  
10  
10  
Ω
Ω
VGS=3V, ID=125m A  
Fo rw a rd Tra n s co n d u ctan ce  
(1)(2)  
g fs  
m S  
VDS=25V,ID=250m A  
In p u t Ca p a cita n ce (2)  
Cis s  
85  
20  
p F  
p F  
Co m m o n S o u rce Ou tp u t  
Cap acita n ce (2)  
Co s s  
VDS=25 V, VGS=0V, f=1MHz  
Reve rs e Tra n s fe r Cap acita n ce Crs s  
(2)  
7
p F  
Tu rn -On De la y Tim e (2)(3)  
Ris e Tim e (2)(3)  
td (o n )  
8
n s  
n s  
n s  
n s  
tr  
8
VDD ≈25V, ID=250m A  
Tu rn -Off De la y Tim e (2)(3)  
Fa ll Tim e (2)(3)  
td (o ff)  
tf  
20  
12  
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sam ple test.  
(3) Switching tim es m easured with 50Ω source im pedance and <5ns rise tim e on a pulse generator  
3-401  
ZVNL120A  
TYPICAL CHARACTERISTICS  
VGS=  
VGS=  
10V  
8V  
1.6  
1.4  
1.2  
10V  
8V  
6V  
1.0  
0.8  
0.6  
0.4  
0.2  
6V  
4V  
5V  
1.0  
0.8  
0.6  
0.4  
4V  
3V  
2V  
3V  
2V  
10 15 20 25 30 35 40 45 50  
0.2  
0
0
0
5
0
2
4
6
8
10  
VDS - Drain Source Voltage (Volts)  
VDS - Drain Source Voltage (Volts)  
Output Characteristics  
Saturation Characteristics  
VDS=  
40V  
1.6  
1.4  
500  
400  
300  
200  
20V  
10V  
1.2  
1.0  
VDS=25V  
0.8  
0.6  
0.4  
0.2  
100  
0
0
1
2
3
4
5
6
7
8
9
10  
0
1
2
3
4
5
6
7
8
9
10  
VGS-Gate Source Voltage (Volts)  
VGS-Gate Source Voltage (Volts)  
Transconductance v gate-source voltage  
Transfer Characteristics  
500  
100  
80  
400  
300  
VDS=25V  
60  
Ciss  
200  
100  
40  
20  
Coss  
Crss  
0
0.4  
1.4  
1.6 1.8 2.0  
0.2  
0.6 0.8 1.0 1.2  
0
0
10  
20  
40  
50  
30  
VDS-Drain Source Voltage (Volts)  
ID- Drain Current (Amps)  
Capacitance v drain-source voltage  
Transconductance v drain current  
3-402  
ZVNL120A  
TYPICAL CHARACTERISTICS  
VGS=2V  
3V  
4V  
100  
16  
14  
VDS=  
50V  
ID= 700m A  
12  
10  
8
100V  
5V  
150V  
10  
10V  
6
4
2
0
1
0.4  
0.8  
1.2  
1.6  
2.0  
2.4  
0
1000  
10  
100  
ID-Drain Current (m A)  
Q-Charge (nC)  
Gate charge v gate-source voltage  
On-resistance v drain current  
100  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
VGS=5V  
ID=250m A  
R
e
c
n
ta  
s
i
s
e
R
VGS=3V  
e
ID=  
1A  
c
r
10  
u
ID=125m A  
o
S
-
n
0.5A  
0.1A  
Drai  
VGS=VDS  
ID=1mA  
1
0.4  
-80 -60 -40 -20  
0
20 40 60 80 100 120 140 160  
1
10  
20  
VGS-Gate Source Voltage (Volts)  
Tj-Junction Temperature (C°)  
Normalised RDS(on) and VGS(th) vs Temperature  
On-resistance vs gate-source voltage  
3-403  

相关型号：

ZVNL120ASMTC

 Small Signal Field-Effect Transistor, 0.18A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 COMPATIBLE, E-LINE PACKAGE-3
ZETEX

ZVNL120ASTOA

 Small Signal Field-Effect Transistor, 0.18A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 COMPATIBLE, E-LINE PACKAGE-3
ZETEX

ZVNL120ASTOB

 180mA, 200V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 COMPATIBLE, E-LINE PACKAGE-3
DIODES

ZVNL120ASTZ

 Small Signal Field-Effect Transistor, 0.18A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 COMPATIBLE, E-LINE PACKAGE-3
ZETEX

ZVNL120C

 TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 180MA I(D) | TO-92
ETC

ZVNL120CSM

 Small Signal Field-Effect Transistor, 0.18A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 COMPATIBLE, E-LINE PACKAGE-3
ZETEX

ZVNL120CSM

 暂无描述
DIODES

ZVNL120CSMTA

 Small Signal Field-Effect Transistor, 0.18A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 COMPATIBLE, E-LINE PACKAGE-3
ZETEX

ZVNL120CSMTC

 Small Signal Field-Effect Transistor, 0.18A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 COMPATIBLE, E-LINE PACKAGE-3
ZETEX

ZVNL120CSTOA

 Small Signal Field-Effect Transistor, 0.18A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 COMPATIBLE, E-LINE PACKAGE-3
ZETEX

ZVNL120CSTOA

 暂无描述
DIODES

ZVNL120CSTOB

 Small Signal Field-Effect Transistor, 0.18A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 COMPATIBLE, E-LINE PACKAGE-3
ZETEX
©2020 ICPDF网 联系我们和版权申明