ZX3CD1S1M832TC [ZETEX]
12V PNP LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY DIODE COMBINATION DUAL; 12V PNP低饱和晶体管和40V ， 1A肖特基二极管的组合DUAL
| 型号： | ZX3CD1S1M832TC |
| 厂家： | 
ZETEX SEMICONDUCTORS |
| 描述： | 12V PNP LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY DIODE COMBINATION DUAL |
| 文件： | 总9页 (文件大小：349K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ZX3CD1S1M832
MPPS™ Miniature Package Power Solutions
12V PNP LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY
DIODE COMBINATION DUAL
SUMMARY
PNP Transistor
V
=-12V; R
= 65m ;
= -4A
C
CEO
SAT
Schottky Diode
V = 40V; V = 500mV (@1A); I =1A
R
F
C
DESCRIPTION
Packaged in the new innovative 3mm x 2mm MLP this combination dual
comprises an ultra low saturation PNP transistor and a 1A Schottky barrier
diode. This excellent combination provides users with highly efficient
performance in applications including DC-DC and charging circuits.
Users will also gain several other key benefits:
Performance capability equivalent to much larger packages
3mm x 2mm Dual Die MLP
Improved circuit efficiency & power levels
PCB area and device placement savings
Lower package height (0.9mm nom)
Reduced component count
Cathode
C
FEATURES
B
•
•
•
Extremely Low Saturation Voltage (-140mV @1A)
H
characterised up to -10A
FE
I
= -4A Continuous Collector Current
E
C
Anode
•
•
Extremely Low V , fast switching Schottky
F
3mm x 2mm MLP
APPLICATIONS
•
•
•
•
DC - DC Converters
Mobile Phones
Charging Circuits
Motor control
PINOUT
ORDERING INFORMATION
DEVICE
REEL
TAPE
WIDTH
QUANTITY
PER REEL
ZX3CD1S1M832TA
7
8mm
8mm
3000
3mm x 2mm Dual MLP
underside view
ZX3CD1S1M832TC 13
10000
DEVICE MARKING
1S1
ISSUE 1 - JUNE 2002
1
ZX3CD1S1M832
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Transistor
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
V
V
V
-20
-12
V
V
CBO
CEO
EBO
-7.5
-12
V
I
I
I
I
A
CM
Continuous Collector Current (a)(f)
Continuous Collector Current (b)(f)
Base Current
-4
A
C
C
B
-4.4
1000
A
mA
Power Dissipation at TA=25°C (a)(f)
Linear Derating Factor
P
P
P
P
P
P
1.5
12
W
D
D
D
D
D
D
mW/°C
Power Dissipation at TA=25°C (b)(f)
Linear Derating Factor
2.45
19.6
W
mW/°C
Power Dissipation at TA=25°C (c)(f)
Linear Derating Factor
1
8
W
mW/°C
Power Dissipation at TA=25°C (d)(f)
Linear Derating Factor
1.13
9
W
mW/°C
Power Dissipation at TA=25°C (d)(g)
Linear Derating Factor
1.7
13.6
W
mW/°C
Power Dissipation at TA=25°C (e)(g)
Linear Derating Factor
3
24
W
mW/°C
Storage Temperature Range
Junction Temperature
T
T
-55 to +150
150
°C
°C
stg
j
THERMAL RESISTANCE
PARAMETER
SYMBOL
VALUE
83
UNIT
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
Junction to Ambient (a)(f)
Junction to Ambient (b)(f)
Junction to Ambient (c)(f)
Junction to Ambient (d)(f)
Junction to Ambient (d)(g)
Junction to Ambient (e)(g)
Notes
R
R
R
R
R
R
θJA
θJA
θJA
θJA
θJA
θJA
51
125
111
73.5
41.7
(a) For a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached. The
copper area is split down the centre line into two separate areas with one half connected to each half of the dual device.
(b) Measured at t<5 secs for a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed
pads attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device.
(c) For a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with minimal lead connections only.
(d) For a dual device surface mounted on 10 sq cm single sided 1oz copper on FR4 PCB, in still air conditions with all exposed pads attached
attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device.
(e) For a dual device surface mounted on 85 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached
attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device.
(f) For a dual device with one active die.
(g) For dual device with 2 active die running at equal power.
(h) Repetitive rating - pulse width limited by max junction temperature. Refer to Transient Thermal Impedance graph.
(i) The minimum copper dimensions required for mounting are no smaller than the exposed metal pads on the base of the device as shown in the
package dimensions data. The thermal resistance for a dual device mounted on 1.5mm thick FR4 board using minimum copper 1 oz weight, 1mm
wide tracks and one half of the device active is Rth = 250°C/W giving a power rating of Ptot = 500mW.
ISSUE 1 - JUNE 2002
2
ZX3CD1S1M832
TRANSISTOR TYPICAL CHARACTERISTICS
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
V
10
1
T
amb=25°C
CE(SAT)
2oz Cu
Limited
Note (e)(g)
2oz Cu
Note (a)(f)
DC
1oz Cu
Note (d)(g)
1s
100ms
0.1
0.01
10ms
1ms
Note (a)(f)
100us
1oz Cu
Single Pulse, Tamb=25°C
1
Note (d)(f)
0.1
10
0
25
50
75
100 125 150
V
Collector-Emitter Voltage (V)
Temperature (°C)
CE
Safe Operating Area
Derating Curve
225
200
175
150
125
100
75
Note (a)(f)
80
60
40
20
0
1oz copper
Note (f)
1oz copper
Note (g)
D=0.5
D=0.2
2oz copper
Note (f)
Single Pulse
D=0.05
D=0.1
50
2oz copper
Note (g)
25
0
100µ 1m 10m 100m
1
10 100 1k
0.1
1
10
100
Pulse Width (s)
BoardCuArea(sqcm)
Transient Thermal Impedance
Thermal Resistance v Board Area
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
2oz copper
Note (g)
T
T
amb=25°C
jmax=150°C
Continuous
2oz copper
Note (f)
1oz copper
Note (g)
1oz copper
Note (f)
0.1
1
10
100
BoardCuArea(sqcm)
Power Dissipation v Board Area
ISSUE 1 - JUNE 2002
3
ZX3CD1S1M832
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Schottky Diode
Continuous Reverse Voltage
V
V
40
425
1850
3
V
A
R
F
Forward Voltage @ I =1000mA(typ)
F
Forward Current
I
I
I
mA
A
F
Average Peak Forward Current D=50%
FAV
12
7
A
A
Non Repetitive Forward Current t≤ 100s
t≤ 10ms
FSM
Power Dissipation at TA=25°C (a)(f)
Linear Derating Factor
P
P
P
P
P
P
1.2
12
W
D
D
D
D
D
D
mW/°C
Power Dissipation at TA=25°C (b)(f)
Linear Derating Factor
2
20
W
mW/°C
Power Dissipation at TA=25°C (c)(f)
Linear Derating Factor
0.8
8
W
mW/°C
Power Dissipation at TA=25°C (d)(f)
Linear Derating Factor
0.9
9
W
mW/°C
Power Dissipation at TA=25°C (d)(g)
Linear Derating Factor
1.36
13.6
W
mW/°C
Power Dissipation at TA=25°C (e)(g)
Linear Derating Factor
2.4
24
W
mW/°C
Storage Temperature Range
Junction Temperature
T
T
-55 to +150
125
°C
°C
stg
j
THERMAL RESISTANCE
PARAMETER
SYMBOL
VALUE
83
UNIT
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
Junction to Ambient (a)(f)
Junction to Ambient (b)(f)
Junction to Ambient (c)(f)
Junction to Ambient (d)(f)
Junction to Ambient (d)(g)
Junction to Ambient (e)(g)
Notes
R
R
R
R
R
R
θJA
θJA
θJA
θJA
θJA
θJA
51
125
111
73.5
41.7
(a) For a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached. The
copper area is split down the centre line into two separate areas with one half connected to each half of the dual device.
(b) Measured at t<5 secs for a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed
pads attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device.
(c) For a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with minimal lead connections only.
(d) For a dual device surface mounted on 10 sq cm single sided 1oz copper on FR4 PCB, in still air conditions with all exposed pads attached
attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device.
(e) For a dual device surface mounted on 85 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached
attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device.
(f) For a dual device with one active die.
(g) For dual device with 2 active die running at equal power.
(h) Repetitive rating - pulse width limited by max junction temperature. Refer to Transient Thermal Impedance graph.
(i) The minimum copper dimensions required for mounting are no smaller than the exposed metal pads on the base of the device as shown in the
package dimensions data. The thermal resistance for a dual device mounted on 1.5mm thick FR4 board using minimum copper 1 oz weight, 1mm
wide tracks and one half of the device active is Rth = 250°C/W giving a power rating of Ptot = 400mW.
ISSUE 1 - JUNE 2002
4
ZX3CD1S1M832
SCHOTTKY TYPICAL CHARACTERISTICS
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Tamb=25°C
Note (a)(f)
80
60
40
20
0
2oz Cu
Note (e)(g)
2oz Cu
Note (a)(f)
D=0.5
D=0.2
1oz Cu
Note (d)(g)
Single Pulse
D=0.05
D=0.1
1oz Cu
Note (d)(f)
100µ 1m 10m 100m
1
10 100 1k
0
25
50
75
100
125
Pulse Width (s)
Transient Thermal Impedance
Temperature (°C)
Derating Curve
3.0
2.5
2.0
1.5
1.0
0.5
0.0
225
200
175
150
125
100
75
2oz copper
Note (g)
Tamb=25°C
jmax=125°C
Continuous
1oz copper
Note (f)
T
1oz copper
Note (g)
2oz copper
Note (f)
2oz copper
Note (f)
1oz copper
Note (g)
50
1oz copper
Note (f)
2oz copper
Note (g)
25
0
0.1
1
10
100
0.1
1
10
100
Board Cu Area (sqcm)
BoardCuArea(sqcm)
Power Dissipation v Board Area
Thermal Resistance v Board Area
ISSUE 1 - JUNE 2002
5
ZX3CD1S1M832
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated).
amb
PARAMETER
SYMBOL
MIN.
TYP.
MAX. UNIT
CONDITIONS.
TRANSISTOR ELECTRICAL CHARACTERISTICS
Collector-Base Breakdown
Voltage
V
V
V
-20
-12
-35
-25
V
V
V
I =-100A
C
(BR)CBO
(BR)CEO
Collector-Emitter Breakdown
Voltage
I =-10mA*
C
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
-7.5
-8.5
I =-100A
E
(BR)EBO
CBO
I
I
I
-25
-25
-25
nA
nA
nA
V
V
V
=-16V
=-6V
CB
Emitter Cut-Off Current
EBO
EB
Collector Emitter Cut-Off Current
=-10V
CES
CES
Collector-Emitter Saturation
Voltage
V
-10
-17
mV
mV
mV
mV
mV
I =-0.1A, I =-10mA*
C B
CE(sat)
-100
-100
-195
-240
-140
-150
-300
-300
I =-1A, I =-10mA*
C B
I =-1.5A, I =-50mA*
C
C
B
I =-3A, I =-50mA*
B
I =-4A, I =-150mA*
C
B
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
V
V
h
-0.97
-0.87
-1.05
V
V
I =-4A, I =-150mA*
C B
BE(sat)
BE(on)
FE
-0.950
I =-4A, V =-2V*
C CE
Static Forward Current Transfer
Ratio
300
300
180
60
475
450
275
100
70
I =-10mA, V =-2V*
C CE
I =-0.1A, V =-2V*
C
C
CE
CE
CE
I =-2.5A, V =-2V*
I =-8A, V =-2V*
C
45
I =-10A, V =-2V*
C CE
Transition Frequency
f
100
110
MHz I =-50mA, V =-10V
T
C
CE
f=100MHz
Output Capacitance
Turn-On Time
C
21
70
30
pF
ns
ns
V
=-10V, f=1MHz
obo
(on)
(off)
CB
t
t
V
=-6V, I =-2A
C
=I =-50mA
CC
I
B1 B2
Turn-Off Time
130
SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS
Reverse Breakdown Voltage
Forward Voltage
V
V
40
60
V
I =300A
R
(BR)R
F
240
265
305
355
390
425
495
420
270
290
340
400
450
500
600
—
mV
mV
mV
mV
mV
mV
mV
mV
I =50mA*
F
I =100mA*
F
I =250mA*
F
I =500mA*
F
I =750mA*
F
I =1000mA*
F
I =1500mA*
F
I =1000mA,T =100°C*
F
a
Reverse Current
I
50
25
12
100
A
pF
ns
V =30V
R
R
Diode Capacitance
C
f=1MHz,V =25V
R
D
Reverse Recovery
Time
t
switched from
rr
I
= 500mA to I = 500mA
F
R
R
Measured at I = 50mA
*Measured under pulsed conditions.
ISSUE 1 - JUNE 2002
6
ZX3CD1S1M832
TRANSISTOR TYPICAL CHARACTERISTICS
0.25
0.20
0.15
0.10
0.05
0.00
IC/IB=50
Tamb=25°C
100m
10m
1m
100°C
25°C
IC/IB=100
IC/IB=50
-55°C
IC/IB=10
IC10mCollector Current 1(A)
IC10mCollector Current 1(A)
1m
100m
10
1m
100m
10
VCE(SAT) vIC
VCE(SAT) vIC
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
630
540
450
360
270
180
90
V =2V
IC/IB=50
CE
1.0
0.8
0.6
0.4
100°C
-55°C
25°C
25°C
-55°C
100°C
100m
0
IC Collector Current (A) 10
IC10mCollector Current 1(A)
1m
10m
100m
1
1m
10
h vIC
VBE(SAT) vIC
FE
V =2V
1.0
0.8
0.6
0.4
0.2
CE
-55°C
25°C
100°C
1m
10m
100m
1
10
IC Collector Current (A)
VBE(ON) vIC
ISSUE 1 - JUNE 2002
7
ZX3CD1S1M832
SCHOTTKY TYPICAL CHARACTERISTICS
ISSUE 1 - JUNE 2002
8
ZX3CD1S1M832
MLP832 PACKAGE OUTLINE (3mm x 2mm Micro Leaded Package)
CONTROLLING DIMENSIONS IN MILLIMETRES
APPROX. CONVERTED DIMENSIONS IN INCHES
MLP832 PACKAGE DIMENSIONS
MILLIMETRES
INCHES
MILLIMETRES
MIN. MAX.
0.65 REF
2.00 BSC
INCHES
MIN. MAX.
DIM
DIM
MIN.
0.80
0.00
0.65
0.15
0.24
0.17
MAX.
1.00
0.05
0.75
0.25
0.34
0.30
MIN.
MAX.
0.039
A
0.031
0.00
e
E
0.0256 BSC
0.0787 BSC
A1
A2
A3
b
0.002
0.0255
0.006
0.009
0.0066
0.0295
0.0098
0.013
E2
E4
L
0.43
0.63
0.36
0.017
0.0249
0.014
0.16
0.20
0.006
0.0078
0.00
0.45
0.0157
0.005
b1
D
0.0118
L2
r
0.125
3.00 BSC
0.118 BSC
0.075 BSC
0.0029 BSC
D2
D3
0.82
1.01
1.02
1.21
0.032
0.040
⍜
0Њ
12Њ
0Њ
12Њ
0.0397
0.0476
© Zetex plc 2002
Europe
Americas
Asia Pacific
Zetex (Asia) Ltd
Zetex plc
Zetex GmbH
Zetex Inc
Fields New Road
Chadderton
Oldham, OL9 8NP
United Kingdom
Telephone (44) 161 622 4422
Fax: (44) 161 622 4420
uksales@zetex.com
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Telefon: (49) 89 45 49 49 0
Fax: (49) 89 45 49 49 49
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Telephone: (631) 360 2222
Fax: (631) 360 8222
usa.sales@zetex.com
Telephone: (852) 26100 611
Fax: (852) 24250 494
asia.sales@zetex.com
These offices are supported by agents and distributors in major countries world-wide.
This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced
for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company
reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
For the latest product information, log on to www.zetex.com
ISSUE 1 - JUNE 2002
9
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