ZX5T955ZTA [ZETEX]

140V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89; 140V PNP低饱和中功率晶体管SOT89
ZX5T955ZTA
型号: ZX5T955ZTA
厂家: ZETEX SEMICONDUCTORS    ZETEX SEMICONDUCTORS
描述:

140V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89
140V PNP低饱和中功率晶体管SOT89

晶体 晶体管 开关
文件: 总6页 (文件大小:91K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
ZX5T955Z  
140V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89  
SUMMARY  
BVCEO = -140V : RSAT = 85m ; IC = -3A  
DESCRIPTION  
Packaged in the SOT89 outline this new 5th generation low saturation 140V  
PNP transistor offers low on state losses m aking it ideal for use in DC-DC  
circuits, line switching and various driving and power m anagem ent functions.  
FEATURES  
3 am ps continuous current  
SOT89  
Up to 10 am ps peak current  
Very low saturation voltages  
APPLICATIONS  
Motor driving  
Line switching  
High side switches  
Subscriber line interface cards (SLIC)  
ORDERING INFORMATION  
DEVICE  
REEL  
S IZE  
QUANTITY PER  
REEL  
TAPE WIDTH  
7"  
12m m  
em bossed  
1000 units  
ZX5T955ZTA  
PINOUT  
DEVICE MARKING  
955  
VIEW  
ISSUE 1 - DECEMBER 2004  
1
ZX5T955Z  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
S YMBOL  
LIMIT  
-180  
-140  
-7  
UNIT  
V
Co lle cto r-b a s e vo lta g e  
Co lle cto r-e m itte r vo lta g e  
Em itte r-b a s e vo lta g e  
BV  
BV  
BV  
CBO  
CEO  
EBO  
V
V
(a )  
Co n tin u o u s co lle cto r cu rre n t  
I
-3  
A
C
Pe a k p u ls e cu rre n t  
(a )  
I
-10  
A
CM  
Po w e r d is s ip a tio n a t T =25°C  
A
P
1.5  
12  
W
D
Lin e a r d e ra tin g fa cto r  
m W/°C  
(b )  
Po w e r d is s ip a tio n a t T =25°C  
A
P
2.1  
W
D
Lin e a r d e ra tin g fa cto r  
16.8  
m W/°C  
Op e ra tin g a n d s to ra g e te m p e ra tu re ra n g e  
T , T  
-55 to 150  
°C  
j
s tg  
THERMAL RESISTANCE  
PARAMETER  
S YMBOL  
LIMIT  
83  
UNIT  
°C/W  
°C/W  
(a )  
J u n ctio n to a m b ie n t  
R
R
J A  
J A  
(b )  
J u n ctio n to a m b ie n t  
60  
NOTES:  
(a) For a device surface m ounted on 25m m x 25m m x 1.6m m FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.  
(b)For a device surface m ounted on 50m m x 50m m x 1.6m m FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.  
ISSUE 1 - DECEMBER 2004  
2
ZX5T955Z  
CHARACTERISTICS  
ISSUE 1 - DECEMBER 2004  
3
ZX5T955Z  
ELECTRICAL CHARACTERISTICS (at T  
= 25°C unless otherwise stated)  
am b  
S YMBOL  
PARAMETER  
MIN.  
-180  
-180  
-140  
-7.0  
TYP. MAX. UNIT CONDITIONS  
Co lle cto r-b a s e b re a kd o w n vo lta g e  
Co lle cto r-e m itte r b re a kd o w n vo lta g e  
Co lle cto r-e m itte r b re a kd o w n vo lta g e  
Em itte r-b a s e b re a kd o w n vo lta g e  
Co lle cto r cu t-o ff cu rre n t  
BV  
BV  
BV  
BV  
-200  
-200  
-160  
-8.0  
Ͻ1  
V
I
I
I
I
= -100A  
CBO  
CER  
CEO  
EBO  
C
C
C
E
V
= -1A, RB Յ 1k⍀  
= -10m A*  
V
V
= -100A  
I
-20  
-0.5  
-20  
nA  
A  
nA  
A  
nA  
m V  
m V  
m V  
m V  
m V  
m V  
V
= -150V  
= -150V, T  
= -150V  
= -150V, T  
= -6V  
CBO  
CB  
V
=100ЊC  
=100ЊC  
CB  
am b  
am b  
Co lle cto r cu t-o ff cu rre n t  
I
Ͻ1  
V
CB  
CER  
RՅ1k⍀  
-0.5  
-10  
V
CB  
Em itte r cu t-o ff cu rre n t  
I
Ͻ1  
-37  
V
EB  
EBO  
Co lle cto r-e m itte r s a tu ra tio n vo lta g e  
V
-60  
I = -0.1A, I = -5m A*  
C B  
CE(S AT)  
-50  
-75  
I
= -0.5A, I = -50m A*  
B
C
I
= -1A, I = -100m A*  
B
-80  
-115  
-330  
C
C
C
C
C
C
C
C
I
I
I
I
I
I
I
= -3A, I = -300m A*  
B
-255  
Ba s e -e m itte r s a tu ra tio n vo lta g e  
Ba s e -e m itte r tu rn o n vo lta g e  
V
V
-910 -1010  
= -3A, I = -300m A*  
B
BE(S AT)  
BE(ON)  
FE  
-800  
225  
200  
100  
5
-900  
= -3A, V = -5V*  
CE  
S ta tic fo rw a rd cu rre n t tra n s fe r ra tio  
h
100  
100  
45  
= -10m A, V = -5V*  
CE  
300  
= -1A, V = -5V*  
CE  
= -3A, V = -5V*  
CE  
= -10A, V = -5V*  
CE  
Tra n s itio n fre q u e n cy  
f
120  
MHz I = -100m A, V = -10V  
C CE  
T
f=50MHz  
V = -10V, f= 1MHz*  
CB  
Ou tp u t ca p a cita n ce  
S w itch in g tim e s  
C
33  
42  
pF  
ns  
OBO  
t
t
I
I
= -1A, V = -50V,  
CC  
ON  
C
636  
= -I = -100m A  
B2  
OFF  
B1  
* Measured under pulsed conditions. Pulse width Յ 300s; duty cycle Յ 2%.  
ISSUE 1 - DECEMBER 2004  
4
ZX5T955Z  
TYPICAL CHARACTERISTICS  
ISSUE 1 - DECEMBER 2004  
5
ZX5T955Z  
PACKAGE OUTLINE  
PACKAGE DIMENSIONS  
Millim eters  
DIM  
Inches  
Millim eters  
Inches  
Min  
DIM  
Min  
1.40  
0.38  
-
Max  
1.60  
0.48  
0.53  
1.80  
0.44  
4.60  
Min  
Max  
0.630  
0.019  
0.021  
0.071  
0.017  
0.181  
Min  
1.40  
3.75  
-
Max  
Max  
0.059  
0.167  
0.102  
0.118  
0.112  
-
A
b
0.550  
0.015  
-
e
E
1.50  
4.25  
2.60  
3.00  
2.85  
-
0.055  
0.150  
-
b1  
b2  
c
E1  
G
H
-
1.50  
0.28  
4.40  
0.060  
0.011  
0.173  
2.90  
2.60  
-
0.114  
0.102  
-
D
© Zetex Sem iconductors plc 2004  
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Am ericas  
Asia Pacific  
Corporate Headquaters  
Zetex Gm bH  
Zetex Inc  
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Oldham , OL9 9LL  
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Germ any  
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Hauppauge, NY 11788  
USA  
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Hong Kong  
United Kingdom  
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Fax: (49) 89 45 49 49 49  
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Telephone: (1) 631 360 2222  
Fax: (1) 631 360 8222  
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Telephone: (852) 26100 611  
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Telephone (44) 161 622 4444  
Fax: (44) 161 622 4446  
hq@zetex.com  
These offices are supported by agents and distributors in m ajor countries world-wide.  
This publication is issued to provide outline inform ation only which (unless agreed by the Com pany in writing) m ay not be used, applied or reproduced  
for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Com pany  
reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.  
For the latest product inform ation, log on to www.zetex.com  
ISSUE 1 - DECEMBER 2004  
6

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