ZXMN10A08DN8TC [ZETEX]
100V N-CHANNEL ENHANCEMENT MODE MOSFET; 100V N沟道增强型MOSFET
| 型号： | ZXMN10A08DN8TC |
| 厂家： | 
ZETEX SEMICONDUCTORS |
| 描述： | 100V N-CHANNEL ENHANCEMENT MODE MOSFET |
| 文件： | 总7页 (文件大小：178K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ZXMN10A08DN8
100V N-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
= 100V; R
V
= 0.25 I = 2.1A
D
(BR)DSS
DS(ON)
DESCRIPTION
This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure
that com bines the benefits of low on-resistance with fast switching speed. This
m akes them ideal for high efficiency, low voltage, power m anagem ent
applications.
SO8
FEATURES
•
•
•
•
•
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
Low profile SOIC package
APPLICATIONS
•
•
•
•
DC - DC converters
Power m anagem ent functions
Disconnect switches
Motor control
PINOUT
ORDERING INFORMATION
DEVICE
REEL
SIZE
TAPE
WIDTH
QUANTITY
PER REEL
ZXMN10A08DN8TA
ZXMN10A08DN8TC
7”
12m m
12m m
500 units
13”
2,500 units
DEVICE MARKING
Top View
•
ZXMN
10A08D
ISSUE 4 - J ANUARY 2005
1
S E M IC O N D U C T O R S
ZXMN10A08DN8
ABSOLUTE MAXIMUM RATINGS
PARAMETER
S YMBOL
LIMIT
100
UNIT
V
Dra in -s o u rce vo lta g e
Ga te s o u rce vo lta g e
V
V
DS S
GS
20
V
(b )
(b )
(a )
Co n tin u o u s d ra in cu rre n t
V
V
V
=10V; T =25°C
I
2.1
1.7
1.6
A
GS
GS
GS
A
D
=10V; T =70°C
A
=10V; T =25°C
A
(c)
Pu ls e d d ra in cu rre n t
I
I
I
9
2.6
9
A
A
A
DM
(b )
Co n tin u o u s s o u rce cu rre n t (b o d y d io d e )
S
(c)
Pu ls e d s o u rce cu rre n t (b o d y d io d e )
S M
(a )
Po w e r d is s ip a tio n a t T =25°C
A
Lin e a r d e ra tin g fa cto r
P
1.25
10
W
m W/°C
D
(b )
Po w e r d is s ip a tio n a t T =25°C
A
P
1.8
W
D
Lin e a r d e ra tin g fa cto r
14.5
m W/°C
Op e ra tin g a n d s to ra g e te m p e ra tu re ra n g e
T :T
-55 to +150
°C
j
s tg
THERMAL RESISTANCE
PARAMETER
S YMBOL
VALUE
100
UNIT
°C/W
°C/W
J u n ctio n to a m b ie n t (a )
J u n ctio n to a m b ie n t (b )
R
R
θJ A
θJ A
69
NOTES
(a) For a device surface m ounted on 25m m x 25m m FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface m ounted on FR4 PCB m easured at tр5 secs.
(c) Repetitive rating 25m m x 25m m FR4 PCB, D = 0.02, pulse width 300s - pulse width lim ited by m axim um junction tem perature. Refer to
Transient Therm al Im pedance graph
ISSUE 4 - J ANUARY 2005
2
S E M IC O N D U C T O R S
ZXMN10A08DN8
TYPICAL CHARACTERISTICS
ISSUE 4 - J ANUARY 2005
3
S E M IC O N D U C T O R S
ZXMN10A08DN8
ELECTRICAL CHARACTERISTICS (at TA = 25°C unless otherwise stated).
PARAMETER
S YMBOL
MIN.
TYP. MAX. UNIT CONDITIONS .
S TATIC
Dra in -s o u rce b re a kd o w n vo lta g e
Ze ro g a te vo lta g e d ra in cu rre n t
Ga te -b o d y le a ka g e
V
100
V
A
nA
V
I =250A, V =0V
D GS
(BR)DS S
I
I
0.5
V
=100V, V =0V
GS
DS S
DS
GS
100
V
=Ϯ20V, V =0V
DS
GS S
Ga te -s o u rce th re s h o ld vo lta g e
Static drain-source on-state resistance
V
R
2.0
I =250A, V = V
DS GS
D
GS (th )
(1)
0.25
0.30
V
V
=10V, I =3.2A
D
⍀
⍀
DS (o n )
GS
GS
=6V, I =2.6A
D
(1)(3)
Fo rw a rd tra n s co n d u cta n ce
g
5.0
S
V
=15V,I =3.2A
D
fs
DS
(3)
DYNAMIC
In p u t ca p a cita n ce
C
C
C
405
28.2
14.2
pF
pF
pF
is s
V
=50 V, V =0V,
DS
GS
Ou tp u t ca p a cita n ce
o s s
rs s
f=1MHz
Re ve rs e tra n s fe r ca p a cita n ce
(2) (3)
S WITCHING
Tu rn -o n d e la y tim e
Ris e tim e
t
t
t
t
3.4
2.2
8
ns
ns
ns
ns
nC
d (o n )
r
V
R
=30V, I =1.2A
D
DD
Tu rn -o ff d e la y tim e
Fa ll tim e
≅6.0⍀, V =10V
d (o ff)
f
G
GS
3.2
4.2
Ga te ch a rg e
Q
V
=50V,V =5V,
g
DS GS
ID=1.2A
To ta l g a te ch a rg e
Q
Q
Q
7.7
1.8
2.1
nC
nC
nC
g
V
=50V,V =10V,
DS
GS
Ga te -s o u rce ch a rg e
Ga te -d ra in ch a rg e
S OURCE-DRAIN DIODE
g s
g d
ID=1.2A
(1)
Dio d e fo rw a rd vo lta g e
V
0.87
0.95
V
T =25°C, I =3.2A,
J S
S D
V
=0V
GS
(3)
Re ve rs e re co ve ry tim e
t
27
32
ns
T =25°C, I =1.2A,
J F
d i/d t= 100A/s
rr
(3)
Re ve rs e re co ve ry ch a rg e
Q
nC
rr
NOTES:
(1) Measured under pulsed conditions. Width = 300µs. Duty cycle ≤ 2% .
(2) Switching characteristics are independent of operating junction tem perature.
(3) For design aid only, not subject to production testing.
ISSUE 4 - J ANUARY 2005
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S E M IC O N D U C T O R S
ZXMN10A08DN8
TYPICAL CHARACTERISTICS
ISSUE 4 - J ANUARY 2005
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S E M IC O N D U C T O R S
ZXMN10A08DN8
TYPICAL CHARACTERISTICS
ISSUE 4 - J ANUARY 2005
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S E M IC O N D U C T O R S
ZXMN10A08DN8
PACKAGE OUTLINE
CONTROLLING DIMENSIONS IN MILLIMETERS APPROX CONVERSIONS INCHES
PACKAGE DIMENSIONS
Millim eters
Inches
Min
Millim eters
Min Max
1.27 BSC
Inches
Min Max
0.050 BSC
DIM
DIM
Min
1.35
0.10
4.80
5.80
3.80
0.40
Max
Max
0.069
0.010
0.197
0.244
0.157
0.050
A
A1
D
1.75
0.25
5.00
6.20
4.00
1.27
0.053
0.004
0.189
0.228
0.150
0.016
e
b
c
0.33
0.19
0°
0.51
0.25
8°
0.013
0.020
0.010
8°
0.008
0°
H
⍜
h
-
E
0.25
-
0.50
-
0.010
-
0.020
-
L
© Zetex Sem iconductors plc 2005
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ISSUE 4 - J ANUARY 2005
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S E M IC O N D U C T O R S
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