ZXMN2A14F [ZETEX]
20V N-CHANNEL ENHANCEMENT MODE MOSFET; 20V N沟道增强型MOSFET
| 型号： | ZXMN2A14F |
| 厂家： | 
ZETEX SEMICONDUCTORS |
| 描述： | 20V N-CHANNEL ENHANCEMENT MODE MOSFET |
| 文件： | 总7页 (文件大小：201K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ZXMN2A14F
20V N-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V
=20V : R
(
)=0.06 ; I =4.1A
(BR)DSS
DS on D
DESCRIPTION
This new generation of Trench MOSFETs from Zetex utilizes a unique structure that
combines the benefits of low on-resistance with fast switching speed. This makes
them ideal for high efficiency, low voltage, power management applications.
FEATURES
SOT23
• Low on-resistance
• Fast switching speed
• Low threshold
• Low gate drive
• SOT23 package
APPLICATIONS
• DC-DC Converters
• Power Managem ent functions
• Disconnect switches
• Motor control
PINOUT
ORDERING INFORMATION
DEVICE
REEL
SIZE
TAPE
WIDTH
QUANTITY
PER REEL
ZXMN2A14FTA
7”
8m m
8m m
3000 units
ZXMN2A14FTC
13”
10000 units
DEVICE MARKING
• 214
ISSUE 2 - SEPTEMBER 2003
1
S E M IC O N D U C T O R S
ZXMN2A14F
ABSOLUTE MAXIMUM RATINGS
PARAMETER
S YMBOL
LIMIT
UNIT
Dra in -S o u rce Vo lta g e
Ga te -S o u rce Vo lta g e
V
V
I
20
V
DS S
GS
Ϯ12
V
(b )
Continuous Drain Current
4.1
A
@ V =4.5V; T =25°C
D
GS
A
(b )
(a )
@ V =4.5V; T =70°C
3.3
A
GS
A
@ V =4.5V; T =25°C
GS
A
3.4
A
(c)
Pu ls e d Dra in Cu rre n t
I
I
I
19
A
A
DM
(b )
Co n tin u o u s S o u rce Cu rre n t (Bo d y Dio d e )
1.7
S
(c)
Pu ls e d S o u rce Cu rre n t (Bo d y Dio d e )
19
A
S M
(a )
Po w e r Dis s ip a tio n a t T =25°C
A
P
1
W
D
Lin e a r De ra tin g Fa cto r
8
1.5
m W/°C
W
(b )
Po w e r Dis s ip a tio n a t T =25°C
A
P
D
Lin e a r De ra tin g Fa cto r
12
m W/°C
°C
Op e ra tin g a n d S to ra g e Te m p e ra tu re Ra n g e
T , T
-55 to +150
j
s tg
THERMAL RESISTANCE
PARAMETER
S YMBOL
VALUE
125
UNIT
°C/W
°C/W
(a )
J u n ctio n to Am b ie n t
R
R
⍜J A
⍜J A
(b )
J u n ctio n to Am b ie n t
82
NOTES
(a) For a device surface m ounted on 25m m x 25m m FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
(b) For a device surface m ounted on FR4 PCB m easured at t Յ 5 sec.
(c) Repetitive rating - 25m m x 25m m FR4 PCB, D=0.02, pulse width 300s - pulse width lim ited by m axim um junction tem perature.
ISSUE 2 - SEPTEMBER 2003
2
S E M IC O N D U C T O R S
ZXMN2A14F
CHARACTERISTICS
ISSUE 2 - SEPTEMBER 2003
3
S E M IC O N D U C T O R S
ZXMN2A14F
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated)
am b
PARAMETER
S YMBOL
MIN.
TYP. MAX. UNIT CONDITIONS
S TATIC
Dra in -S o u rce Bre a kd o w n Vo lta g e
Ze ro Ga te Vo lta g e Dra in Cu rre n t
Ga te -Bo d y Le a ka g e
V
30
V
A
n A
V
I =250A, V =0V
D GS
(BR)DS S
I
I
1
V
=20V, V =0V
DS S
DS GS
100
V
=Ϯ12V, V =0V
GS S
GS DS
Ga te -S o u rce Th re s h o ld Vo lta g e
S ta tic Dra in -S o u rce On -S ta te
V
R
0.7
I =250A, V = V
DS GS
D
GS (th )
DS (o n )
0.060
0.110
⍀
V
V
V
=4.5V, I =3.4A
D
GS
GS
DS
(1)
Re s is ta n ce
⍀
=2.5V, I =2.5A
D
(1) (3)
Fo rw a rd Tra n s co n d u cta n ce
g
9.4
S
=10V,I =3.4A
D
fs
(3)
DYNAMIC
In p u t Ca p a cita n ce
C
C
C
544
132
85
p F
p F
p F
is s
V
= 10V, V =0V,
GS
DS
Ou tp u t Ca p a cita n ce
o s s
rs s
f=1MHz
Re ve rs e Tra n s fe r Ca p a cita n ce
(2) (3)
S WITCHING
Tu rn -On De la y Tim e
Ris e Tim e
t
t
t
t
4.0
5.3
16.6
9.5
6.6
1.2
2.1
n s
n s
d (o n )
VDD= 10V, VGS = 4.5V
r
I = 1A
D
Tu rn -Off De la y Tim e
Fa ll Tim e
n s
d (o ff)
f
RG ≅ 6.0⍀
n s
To ta l Ga te Ch a rg e
Ga te -S o u rce Ch a rg e
Ga te -Dra in Ch a rg e
Q
Q
Q
n C
n C
n C
g
V
=10V,V = 4.5V,
GS
DS
g s
g d
ID=3.4A
S OURCE-DRAIN DIODE
(1)
Dio d e Fo rw a rd Vo lta g e
V
0.85
0.95
V
T =25°C, I =(3.3)A,
J S
S D
V
=0V
GS
(3)
Re ve rs e Re co ve ry Tim e
t
11.4
4.6
n s
T =25°C, I =(1.7)A,
J F
rr
(3)
d i/d t= 100A/s
Re ve rs e Re co ve ry Ch a rg e
Q
nC
rr
NOTES
(1) Measured under pulsed conditions. Pulse width Յ 300s; duty cycle Յ2%.
(2) Switching characteristics are independent of operating junction tem perature.
(3) For design aid only, not subject to production testing.
ISSUE 2 - SEPTEMBER 2003
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S E M IC O N D U C T O R S
ZXMN2A14F
TYPICAL CHARACTERISTICS
ISSUE 2 - SEPTEMBER 2003
5
S E M IC O N D U C T O R S
ZXMN2A14F
TYPICAL CHARACTERISTICS
ISSUE 2 - SEPTEMBER 2003
6
S E M IC O N D U C T O R S
ZXMN2A14F
PACKAGE OUTLINE
PAD LAYOUT
Controlling dim ensions are in m illim etres. Approxim ate conversions are given in inches
PACKAGE DIMENSIONS
MILLIMETRES
INCHES
MIN
MILLIMETRES
INCHES
DIM
DIM
MIN
2.67
1.20
ᎏ
MAX
3.05
1.40
1.10
0.53
0.15
MAX
0.120
0.055
0.043
0.021
MIN
0.33
0.01
2.10
0.45
MAX
0.51
0.10
2.50
0.64
MIN
MAX
0.020
0.004
0.0985
0.025
A
B
C
D
F
0.105
0.047
ᎏ
H
K
L
0.013
0.0004
0.083
0.018
0.37
0.085
0.015
M
N
⍜
0.0034 0.0059
0.075 NOM
0.95 NOM
10Њ TYP
0.0375 NOM
G
1.90 NOM
10Њ TYP
© Zetex plc 2003
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ISSUE 2 - SEPTEMBER 2003
7
S E M IC O N D U C T O R S
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