ZXMN2B03E6TA [ZETEX]
20V SOT23-6 N-channel enhancement mode MOSFET with low gate drive capability; SOT23-6 20V N沟道增强型MOSFET具有低栅极驱动能力
| 型号： | ZXMN2B03E6TA |
| 厂家： | 
ZETEX SEMICONDUCTORS |
| 描述： | 20V SOT23-6 N-channel enhancement mode MOSFET with low gate drive capability |
| 文件： | 总8页 (文件大小：579K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ZXMN2B03E6
20V SOT23-6 N-channel enhancement mode MOSFET
with low gate drive capability
Summary
V
R
(⍀)
I (A)
(BR)DSS
DS(on)
D
0.040 @ V = 4.5V
5.4
4.6
4.0
GS
0.055 @ V = 2.5V
20
GS
0.075 @ V = 1.8V
GS
Description
This new generation trench MOSFET from Zetex features low on-
resistance achievable with low gate drive.
Features
D
S
•
•
•
•
Low on-resistance
Fast switching speed
Low gate drive capability
SOT23-6 package
G
Applications
•
•
•
•
DC-DC converters
Power management functions
Disconnect switches
Motor control
D
D
G
D
D
S
Ordering information
Device
Reel size
(inches)
Tape width Quantity per reel
(mm)
Top view
ZXMN2B03E6TA
7
8
3,000
Device marking
2B3
Issue 1 - September 2006
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ZXMN2B03E6
Absolute maximum ratings
Parameter
Symbol
V
Limit
Unit
Drain-source voltage
20
V
DSS
Gate-source voltage
V
8
V
A
GS
(b)
(b)
(a)
I
5.4
Continuous drain current @ V = 4.5V; T
=25°C
=70°C
=25°C
D
GS
amb
amb
amb
4.3
4.3
@ V = 4.5V; T
GS
@ V = 4.5V; T
GS
(c)
I
26
2.8
26
A
A
Pulsed drain current
DM
(b)
I
Continuous source current (body diode)
S
(c)
I
A
Pulsed source current (body diode)
SM
(a)
P
1.1
W
Power dissipation at T
Linear derating factor
Power dissipation at T
Linear derating factor
=25°C
D
amb
8.8
1.7
mW/°C
W
(b)
P
=25°C
D
amb
13.7
mW/°C
Operating and storage temperature range
T , T
-55 to +150
°C
j
stg
Thermal resistance
Parameter
Symbol
Limit
Unit
(a)
R
113
°C/W
Junction to ambient
⍜JA
(b)
R
73
°C/W
Junction to ambient
⍜JA
NOTES:
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air
conditions.
(b)For a device surface mounted on FR4 PCB measured at t Յ5 sec.
(c) Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300s - pulse width limited by maximum junction
temperature.
Issue 1 - September 2006
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2
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ZXMN2B03E6
Thermal characteristics
Issue 1 - September 2006
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ZXMN2B03E6
Electrical characteristics (at T
= 25°C unless otherwise stated)
amb
Parameter
Static
Symbol
Min. Typ. Max. Unit Conditions
Drain-source breakdown voltage V
20
V
A
nA
V
I = 250A, V =0V
D GS
(BR)DSS
Zero gate voltage drain current
Gate-body leakage
I
I
1
V
= 20V, VGS=0V
DSS
DS
GS
100
V
= 8V, V =0V
DS
GSS
Gate-source threshold voltage
Static drain-source on-state
resistance
V
R
0.4
1.0
I = 250A, V =V
D DS GS
GS(th)
DS(on)
0.040
0.055
0.075
⍀
V
= 4.5V, I = 4.3A
D
GS
GS
GS
DS
(*)
⍀
V
V
V
= 2.5V, I = 3.7A
D
⍀
= 1.8V, I = 3.2A
D
(*) (‡)
g
13.5
S
= 10V, I = 4.3A
Forward transconductance
fs
D
(‡)
Dynamic
Input capacitance
C
1160
210
pF
pF
pF
V
= 10V, V =0V
DS GS
iss
f=1MHz
Output capacitance
C
C
oss
rss
Reverse transfer capacitance
136
(†) (‡)
Switching
Turn-on-delay time
Rise time
t
t
t
t
4.2
6.2
ns
ns
ns
ns
nC
nC
nC
V
= 10V, V = 4.5V
DD GS
d(on)
I = 1A
D
r
R
≈ 6.0⍀
G
Turn-off delay time
Fall time
33.9
12.4
14.5
2
d(off)
f
Total gate charge
Gate-source charge
Gate drain charge
Source-drain diode
Q
Q
Q
V
= 10V, V = 4.5V
DS GS
g
I = 4.3A
D
gs
gd
2.8
(*)
V
0.67
0.95
V
T =25°C, I = 1.8A,
Diode forward voltage
SD
j
S
V
=0V
GS
(‡)
t
10.8
3.4
ns T =25°C, I = 2.8A,
j F
Reverse recovery time
rr
di/dt=100A/s
(‡)
Q
nC
Reverse recovery charge
rr
NOTES:
(*) Measured under pulsed conditions. Pulse width Յ300s; duty cycle Յ2%.
(†) Switching characteristics are independent of operating junction temperature.
(‡) For design aid only, not subject to production testing.
Issue 1 - September 2006
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ZXMN2B03E6
Typical characteristics
Issue 1 - September 2006
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ZXMN2B03E6
Typical characteristics
Current
regulator
QG
50k
Same as
D.U.T
12V
QGS
QGD
VG
VDS
IG
D.U.T
ID
VGS
Charge
Basic gate charge waveform
Gate charge test circuit
VDS
90%
RD
VGS
VDS
RG
VCC
10%
VGS
td(on)
tr
td(off)
tr
t(on)
t(on)
Switching time waveforms
Switching time test circuit
Issue 1 - September 2006
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ZXMN2B03E6
Intentionally left blank
Issue 1 - September 2006
© Zetex Semiconductors plc 2006
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ZXMN2B03E6
Package outline - SOT23-6
DIM
Millimeters
Inches
Max.
Min.
Max.
1.45
0.15
1.30
0.50
0.26
3.10
3.20
1.80
0.60
Min.
0.354
0.00
0.0354
0.0078
0.0035
0.1062
0.0866
0.0511
0.0039
A
A1
A2
b
C
D
E
E1
L
e
e1
L
0.90
0.00
0.90
0.35
0.09
2.70
2.20
1.30
0.10
0.0570
0.0059
0.0511
0.0196
0.0102
0.1220
0.1181
0.0708
0.0236
0.0374 REF
0.0748 REF
30°
0.95 REF
1.90 REF
0°
30°
0°
Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches
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Zetex GmbH
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Germany
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Zetex (Asia Ltd)
Zetex Semiconductors plc
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Oldham, OL9 9LL
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Hauppauge, NY 11788
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Fax: (49) 89 45 49 49 49
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Telephone: (1) 631 360 2222
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Telephone: (852) 26100 611
Fax: (852) 24250 494
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Telephone: (44) 161 622 4444
Fax: (44) 161 622 4446
hq@zetex.com
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Zetex products are distributed worldwide. For details, see www.zetex.com/salesnetwork
This publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or
reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned.
The company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
Issue 1 - September 2006
© Zetex Semiconductors plc 2006
8
www.zetex.com
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