ZXMN3A01E6TA [ZETEX]
30V N-CHANNEL ENHANCEMENT MODE MOSFET; 30V N沟道增强型MOSFET
| 型号： | ZXMN3A01E6TA |
| 厂家： | 
ZETEX SEMICONDUCTORS |
| 描述： | 30V N-CHANNEL ENHANCEMENT MODE MOSFET |
| 文件： | 总7页 (文件大小：1079K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ZXMN3A01E6
30V N-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V
=30V; R
=0.12 I =3.0A
DS(ON) D
(BR)DSS
DESCRIPTION
This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure
that combines the benefits of low on-resistance with fast switching speed. This
makes them ideal for high efficiency, low voltage, power management
applications.
SOT23-6
FEATURES
•
•
•
•
•
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
SOT23-6 package
APPLICATIONS
•
•
•
•
DC - DC Converters
Power Management Functions
Disconnect switches
Motor control
ORDERING INFORMATION
DEVICE
REEL
SIZE
TAPE
WIDTH
QUANTITY
PER REEL
ZXMN3A01E6TA
ZXMN3A01E6TC
7”
12mm
12mm
1000 units
4000 units
13”
DEVICE MARKING
Top View
•
3A1
ISSUE 1 - MARCH 2002
1
ZXMN3A01E6
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
LIMIT
30
UNIT
Drain-Source Voltage
Gate Source Voltage
V
V
V
V
A
DSS
GS
20
Continuous Drain Current V
=10V; T =25°C (b)
I
3.0
2.4
2.4
GS
A
D
V
=10V; T =70°C (b)
GS
A
V
=10V; T =25°C (a)
GS
A
Pulsed Drain Current (c)
I
I
I
10
2.4
10
A
A
A
DM
S
Continuous Source Current (Body Diode) (b)
Pulsed Source Current (Body Diode) (c)
SM
Power Dissipation at T =25°C (a)
A
P
1.1
8.8
W
mW/°C
D
Linear Derating Factor
Power Dissipation at T =25°C (b)
A
P
1.7
13.6
W
mW/°C
D
Linear Derating Factor
Operating and Storage Temperature Range
T :T
-55 to +150
°C
j
stg
THERMAL RESISTANCE
PARAMETER
SYMBOL
VALUE
113
UNIT
°C/W
°C/W
Junction to Ambient (a)
Junction to Ambient (b)
NOTES
R
R
θJA
θJA
70
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface mounted on FR4 PCB measured at tр10 secs.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.05, pulse width 10s - pulse width limited by maximum junction temperature. Refer to
Transient Thermal Impedance graph.
ISSUE 1 - MARCH 2002
2
ZXMN3A01E6
CHARACTERISTICS
ISSUE 1 - MARCH 2002
3
ZXMN3A01E6
ELECTRICAL CHARACTERISTICS (at TA = 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN. TYP. MAX. UNIT CONDITIONS.
STATIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
V
30
1
V
I
=250µA, V
=0V
(BR)DSS
D
GS
=30V, V =0V
GS
I
0.5
V
µA
nA
V
DSS
DS
I
100
V
=Ϯ20V, V
=0V
GSS
GS
DS
Gate-Source Threshold Voltage
V
R
I
=250µA, V
= V
GS(th)
DS(on)
DS
=10V, I =2.5A
GS
D
Static Drain-Source On-State Resistance
(1)
0.106 0.12
0.18
V
V
Ω
Ω
GS
GS
D
=4.5V, I =2.0A
D
Forward Transconductance (1)(3)
DYNAMIC (3)
g
3.5
S
V
=4.5V,I =2.5A
D
fs
DS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING(2) (3)
Turn-On Delay Time
Rise Time
C
C
C
190
38
pF
pF
pF
iss
V
=25 V, V
=0V,
DS
GS
f=1MHz
oss
rss
20
t
t
t
t
1.7
2.3
6.6.
2.9
2.3
ns
ns
ns
ns
nC
d(on)
V
R
=15V, I =2.5A
D
r
DD
=6.0Ω, V
=10V
G
GS
Turn-Off Delay Time
Fall Time
d(off)
f
Gate Charge
Q
V
=15V,V
=5V,
g
DS
GS
GS
ID=2.5A
Total Gate Charge
Q
Q
Q
3.9
0.6
0.9
nC
nC
nC
g
V
=15V,V
=10V,
DS
ID=2.5A
Gate-Source Charge
Gate-Drain Charge
gs
gd
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
V
0.84
0.95
V
T =25°C, I =1.7A,
GS
SD
J
S
V
=0V
Reverse Recovery Time (3)
Reverse Recovery Charge (3)
t
17.7
13.0
ns
T =25°C, I =2.5A,
J F
rr
di/dt= 100A/µs
Q
nC
rr
NOTES
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤ 2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ISSUE 1 - MARCH 2002
4
ZXMN3A01E6
TYPICAL CHARACTERISTICS
ISSUE 1 - MARCH 2002
5
ZXMN3A01E6
TYPICAL CHARACTERISTICS
ISSUE 1 - MARCH 2002
6
ZXMN3A01E6
PACKAGE DIMENSIONS
PAD LAYOUT DETAILS
e
b
2
L
E1
E
DATUM A
a
e1
D
A
A2
A1
DIM Millimetres
Inches
Min
Min
Max
Max
A
0.90
1.45
0.15
1.30
0.50
0.20
3.00
3.00
1.75
0.60
0.35
0.057
0.006
0.051
0.019
0.008
0.118
0.118
0.069
0.002
A1
A2
b
0.00
0
0.90
0.035
0.014
0.0035
0.110
0.102
0.059
0.004
0.35
C
0.09
D
2.80
E
2.60
E1
L
1.50
0.10
e
0.95 REF
1.90 REF
0°
0.037 REF
0.074 REF
0°
e1
L
10°
10°
© Zetex plc 2002
Zetex plc
Fields New Road
Chadderton
Oldham, OL9 8NP
United Kingdom
Zetex GmbH
Streitfeldstraße 19
D-81673 München
Zetex Inc
700 Veterans Memorial Hwy
Hauppauge, NY11788
Zetex (Asia) Ltd
3701-04 Metroplaza, Tower 1
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Hong Kong
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USA
Telephone (44) 161 622 4422
Fax: (44) 161 622 4420
Telefon: (49) 89 45 49 49 0
Fax: (49) 89 45 49 49 49
Telephone: (631) 360 2222
Fax: (631) 360 8222
Telephone: (852) 26100 611
Fax: (852) 24250 494
These offices are supported by agents and distributors in major countries world-wide.
This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced
for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company
reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
For the latest product information, log on to www.zetex.com
ISSUE 1 - MARCH 2002
7
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