ZXMNS3BM832TC [ZETEX]
Small Signal Field-Effect Transistor, 2.72A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 3 MM X 2 MM, DUAL DIE, MLP, 8 PIN;
| 型号： | ZXMNS3BM832TC |
| 厂家： | 
ZETEX SEMICONDUCTORS |
| 描述： | Small Signal Field-Effect Transistor, 2.72A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 3 MM X 2 MM, DUAL DIE, MLP, 8 PIN 开关 晶体管 |
| 文件： | 总5页 (文件大小：126K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ZXMNS3BM832
MPPS™ Miniature Package Power Solutions
30V N Channel MOSFET & 40V, 1A SCHOTTKY DIODE COMBINATION
DUAL
SUMMARY
N Channel MOSFET--- V(BR)DSS =30V; RSAT(on) =0.18 ; D = 2.7A
Schottky Diode --- VR = 40V; VF = 500mV (@1A); IC=1A
DESCRIPTION
Packaged in the new innovation 3mm x 2mm MLP this combination dual
product comprises a low gate drive, low on-resistance N-Channel MOSFET
plus a fast-switching 1A Schottky barrier diode. This combination provides for
highly efficient performance in a range of applications, including DC-DC
conversion and low voltage power-management circuits.
Users will also gain several other key benefits:
3mm x 2mm Dual Die MLP
Performance capability equivalent to much larger packages
Improved circuit efficiency & power levels
PCB area and device placement savings
Lower package height (0.9mm nom)
Reduced component count
Cathode
FEATURES
•
•
•
Low on-resistance
Fast switching speed
Low threshold
Anode
•
•
•
Low gate drive
Extremely Low V , fast switching Schottky
F
3mm x 2mm MLP
PINOUT
APPLICATIONS
•
•
DC - DC Converters
Low voltage power-management
ORDERING INFORMATION
DEVICE
REEL
TAPE
WIDTH
QUANTITY
PER REEL
ZXMNS3BM832TA
ZXMNS3BM832TC
7
8mm
8mm
3000
3mm x 2mm Dual MLP
underside view
13
10000
DEVICE MARKING
MSA
DRAFT ISSUE B - JUNE 2002
1
ZXMNS3BM832
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
MOSFET
Drain-Source Voltage
Gate-Charge Voltage
V
30
V
V
DSS
V
Ϯ12
GS
Continuous Drain Current@V =4.5V; T =25ЊC (b)(d)
GS
I
2.72
2.18
2.00
A
A
A
A
D
@V =4.5V; T =70ЊC (b)(d)
GS
A
@V =2.5V; T =25ЊC (a)(d)
GS
A
Pulsed Drain Current (c)
I
I
t.b.a
2.7
A
A
DM
Source Current (Body Diode) @T =25ЊC (b)(d)
I
S
A
Pulsed Source Current (Body Diode)(c)
Storage Temperature Range
Junction Temperature
t.b.a
A
SM
T
-55 to +150
150
°C
°C
stg
T
j
Schottky Diode
Continuous Reverse Voltage
Forward Current
V
40
V
A
R
I
1
12
F
I
A
Non Repetitive Forward Current t≤ 100µs
t≤ 10ms
FSM
5.2
A
Forward Voltage @ 1A
Storage Temperature Range
Junction Temperature
V
500
mV
°C
°C
F
T
-55 to +150
125
stg
T
j
Notes
(a) For a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached. The
copper are is split down the centre line into two separate areas with one half connected to each half of the dual device.
(b) Measured at t<5 secs for a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed
pads attached. The copper are is split down the centre line into two separate areas with one half connected to each half of the dual device.
(c) For a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with minimal lead connections only.
(d) For a dual device surface mounted on 10 sq cm single sided 1oz copper on FR4 PCB, in still air conditions with all exposed pads attached
attached. The copper are is split down the centre line into two separate areas with one half connected to each half of the dual device.
(e) For a dual device surface mounted on 85 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached
attached. The copper are is split down the centre line into two separate areas with one half connected to each half of the dual device.
(f) For a dual device with one active die.
(g) For dual device with 2 active die running at equal power.
(h) Repetitive rating - pulse width limited by max junction temperature. Refer to Transient Thermal Impedance graph.
(i) The minimum copper dimensions required for mounting are no smaller than the exposed metal pads on the base if the device as shown in the
package dimensions data. The thermal resistance for a dual device mounted on 1.5mm thick FR4 board using minimum copper 1 oz weight, 1mm
wide tracks and one half of the device active is Rth = 250°C/W giving a power rating of Ptot = 500mW.
DRAFT ISSUE B - JUNE 2002
2
ZXMNS3BM832
THERMAL PARAMETERS
PARAMETER
SYMBOL
VALUE
UNIT
Schottky
Power Dissipation at TA=25°C (a)(d)
Linear Derating Factor
P
1.2
12
W
mW/°C
D
Transistor
Power Dissipation at TA=25°C (a)(f)
Linear Derating Factor
P
P
P
P
P
P
1.5
12
W
D
D
D
D
D
D
mW/°C
Power Dissipation at TA=25°C (b)(f)
Linear Derating Factor
2.9
23.2
W
mW/°C
Power Dissipation at TA=25°C (c)(f)
Linear Derating Factor
1
8
W
mW/°C
Power Dissipation at TA=25°C (d)(f)
Linear Derating Factor
1.13
8
W
mW/°C
Power Dissipation at TA=25°C (d)(g)
Linear Derating Factor
1.7
13.6
W
mW/°C
Power Dissipation at TA=25°C (e)(g)
Linear Derating Factor
3
24
W
mW/°C
THERMAL RESISTANCE
PARAMETER
SYMBOL
VALUE
83.3
43
UNIT
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
Junction to Ambient (a)(f)
Junction to Ambient (b)(f)
Junction to Ambient (c)(f)
Junction to Ambient (d)(f)
Junction to Ambient (d)(g)
Junction to Ambient (e)(g)
R
R
R
R
R
R
θJA
θJA
θJA
θJA
θJA
θJA
125
111
73.5
41.7
Notes
(a) For a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached. The
copper are is split down the centre line into two separate areas with one half connected to each half of the dual device.
(b) Measured at t<5 secs for a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed
pads attached. The copper are is split down the centre line into two separate areas with one half connected to each half of the dual device.
(c) For a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with minimal lead connections only.
(d) For a dual device surface mounted on 10 sq cm single sided 1oz copper on FR4 PCB, in still air conditions with all exposed pads attached
attached. The copper are is split down the centre line into two separate areas with one half connected to each half of the dual device.
(e) For a dual device surface mounted on 85 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached
attached. The copper are is split down the centre line into two separate areas with one half connected to each half of the dual device.
(f) For a dual device with one active die.
(g) For dual device with 2 active die running at equal power.
(h) Repetitive rating - pulse width limited by max junction temperature. Refer to Transient Thermal Impedance graph.
(i) The minimum copper dimensions required for mounting are no smaller than the exposed metal pads on the base if the device as shown in the
package dimensions data. The thermal resistance for a dual device mounted on 1.5mm thick FR4 board using minimum copper 1 oz weight, 1mm
wide tracks and one half of the device active is Rth = 250°C/W giving a power rating of Ptot = 500mW.
DRAFT ISSUE B - JUNE 2002
3
ZXMNS3BM832
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN. TYP. MAX. UNIT CONDITIONS.
MOSFET
STATIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Source Threshold Voltage
V
30
V
µA
nA
V
I
=250µA, V =0V
(BR)DSS
D
GS
I
1
V
=30V, V =0V
DSS
DS
GS
I
100
V
=Ϯ20V, V =0V
GS DS
GSS
V
R
0.7
I
=250A, V = V
DS
GS(th)
DS(on)
GS
D
Static Drain-Source On-State Resistance
(1)
0.13
0.17
0.18
0.25
V
V
=4.5V, I =1.5A
D
=2.5V, I =1.3A
D
Ω
Ω
GS
GS
Forward Transconductance (1)(3)
DYNAMIC (3)
g
t.b.a
S
V
=15V,I =1.5A
D
fs
DS
Input Capacitance
C
C
C
314
40
pF
pF
pF
iss
V
=15 V, V =0V,
GS
DS
Output Capacitance
Reverse Transfer Capacitance
SWITCHING(2) (3)
oss
rss
f=1MHz
23
Turn-On Delay Time
Rise Time
t
t
t
t
1.1
1.5
5.1
2.1
2.9
0.6
0.8
ns
ns
ns
ns
nC
nC
nC
d(on)
r
V
R
=15V, I =1A
D
DD
G
Turn-Off Delay Time
Fall Time
=6.0Ω, V =4.5V
GS
d(off)
f
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
Q
Q
Q
g
V
=15V,V =4.5V,
GS
DS
gs
gd
ID=1.5A
V
0.85
0.95
V
T =25°C, I =1.7A,
SD
J
V
S
=0V
GS
Reverse Recovery Time (3)
Reverse Recovery Charge (3)
t
17.7
13.0
ns T =25°C, I =2.7A,
J F
rr
di/dt= 100A/s
Q
nC
rr
SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS
Reverse Breakdown Voltage
Forward Voltage
V
V
40
60
V
I =300A
R
(BR)R
F
240
265
305
355
390
425
495
420
270
290
340
400
450
500
600
—
mV I =50mA*
F
mV I =100mA*
F
F
F
F
F
F
F
mV I =250mA*
mV I =500mA*
mV I =750mA*
mV I =1000mA*
mV I =1500mA*
mV I =1000mA,T =100°C
a
Reverse Current
I
50
25
12
100
A V =30V
R
R
Diode Capacitance
Reverse Recovery Time
C
pF f=1MHz,V =25V
R
D
t
ns switched from
rr
I =500mA to I =500mA
F
R
Measured at I =50mA
R
NOTES:
(1) Measured under pulsed conditions. Width ≤300µs. Duty cycle ≤ 2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
DRAFT ISSUE B - JUNE 2002
4
ZXMNS3BM832
MLP832 PACKAGE OUTLINE (3mm x 2mm Micro Leaded Package)
CONTROLLING DIMENSIONS IN MILLIMETRES
APPROX. CONVERTED DIMENSIONS IN INCHES
MLP832 PACKAGE DIMENSIONS
MILLIMETRES
INCHES
MILLIMETRES
MIN. MAX.
0.65 REF
2.00 BSC
INCHES
MIN. MAX.
DIM
DIM
MIN.
0.80
0.00
0.65
0.15
0.24
0.17
MAX.
1.00
0.05
0.75
0.25
0.34
0.30
MIN.
MAX.
0.039
A
0.031
0.00
e
E
0.0256 BSC
0.0787 BSC
A1
A2
A3
b
0.002
0.0255
0.006
0.009
0.0066
0.0295
0.0098
0.013
E2
E4
L
0.43
0.63
0.36
0.017
0.0249
0.014
0.16
0.20
0.006
0.0078
0.00
0.45
0.0157
0.005
b1
D
0.0118
L2
r
0.125
3.00 BSC
0.118 BSC
0.075 BSC
0.0029 BSC
D2
D3
0.82
1.01
1.02
1.21
0.032
0.040
⍜
0Њ
12Њ
0Њ
12Њ
0.0397
0.0476
© Zetex plc 2002
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DRAFT ISSUE B - JUNE 2002
5
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