ZXMP2120FF [ZETEX]
200V SOT23F P-channel enhancement mode MOSFET; 200V SOT23F P沟道增强型MOSFET
| 型号： | ZXMP2120FF |
| 厂家： | 
ZETEX SEMICONDUCTORS |
| 描述： | 200V SOT23F P-channel enhancement mode MOSFET |
| 文件： | 总10页 (文件大小：411K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ZXMP2120FF
200V SOT23F P-channel enhancement mode MOSFET
Summary
V
R
(⍀)
I (mA)
(BR)DSS
DS
D
(on)
28 @ V = -10V
-200
-137
GS
Description
This 200V enhancement mode P-channel MOSFET provides users with
a competitive specification offering efficient power handling capability,
high impedance and freedom from thermal runaway and thermally
induced secondary breakdown.
Applications benefiting from this device include a variety of telecom
and general high voltage circuits.
Features
D
S
•
•
•
•
•
•
High voltage
G
Low on-resistance
Fast switching speed
Low gate drive
Low threshold
SOT23 FLAT package
Applications
•
Active clamping of primary side MOSFETs in 48 volt DC-DC
converters
S
Ordering information
D
Device
Reel size
(inches)
Tape width
(mm)
Quantity
per reel
G
ZXMP2120FFTA
7
8
3,000
Top view
Device marking
1C4
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ZXMP2120FF
Absolute maximum ratings
Parameter
Symbol
Limit
Unit
Drain-source voltage
V
-200
V
DSS
Gate-source voltage
V
20
V
GS
(a)
I
-137
mA
Continuous drain current @ V = 10V; T
=25°C
D
GS
amb
(c)
I
-0.8
-0.8
1
A
A
Pulsed drain current
DM
(c)
I
Pulsed source current (body diode)
SM
(a)
P
W
Power dissipation at T
Linear derating factor
=25°C
D
amb
8
mW/°C
W
(b)
P
1.5
Power dissapation at T
=25°C
D
amb
Linear derating factor
12.3
mW/°C
°C
Operating and storage temperature range
T , T
-55 to +150
j
stg
Thermal resistance
Parameter
Symbol
Limit
Unit
(a)
R
125
°C/W
Junction to ambient
⍜JA
(b)
R
81
°C/W
Junction to ambient
⍜JA
NOTES:
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air
conditions.
(b)For a device surface mounted on FR4 pcb measured at t Յ5 sec.
(c) Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300s - pulse width limited by maximum junction
temperature.
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ZXMP2120FF
Thermal characteristics
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ZXMP2120FF
Electrical characteristics (at T
= 25°C unless otherwise stated)
amb
Parameter
Static
Symbol Min. Max. Unit Conditions
Drain-source breakdown
voltage
V
-200
V
I = 1mA, V =0V
D GS
(BR)DSS
Zero gate voltage drain current I
-10
A
A
V
= -200V, V =0V
DS GS
DSS
(‡)
-100
V
V
= -160V, V =0V, T=125C
GS
DS
Gate-body leakage
I
20
-3.5
28
nA
V
= 20V, V =0V
DS
GSS
GS
Gate-source threshold voltage
V
-1.5
I = 250A, V =V
D DS GS
GS(th)
DS(on)
Static drain-source on-state
resistance
R
⍀
V
= -10V, I = -150mA
GS
D
(*)
(*)
I
-300
50
mA
mS
V
V
= -25V, V =-10V
On-state drain current
D(on)
DS
DS
GS
(*) (‡)
g
= -25V, I = -150mA
Forward transconductance
fs
D
(‡)
Dynamic
Input capacitance
C
100
25
7
pF
pF
pF
V
= -25V, V =0V
DS GS
iss
f=1MHz
Output capacitance
C
oss
rss
Reverse transfer capacitance
C
(†) (‡)
Switching
Turn-on-delay time
Rise time
t
t
t
t
7
ns
ns
ns
ns
V
= -25V, V = -10V
DD GS
d(on)
I = -150mA
D
15
12
15
r
R
≈ 50⍀
SOURCE
Turn-off delay time
Fall time
d(off)
f
NOTES:
(*) Measured under pulsed conditions. Pulse width Յ300s; duty cycle Յ2%.
(†) Switching characteristics are independent of operating junction temperature.
(‡) For design aid only, not subject to production testing.
Issue 1 - January 2007
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ZXMP2120FF
Typical charateristics
V
-10V
-8V
GS=
V
GS=
-0.4
-0.3
-10V
-8V
-7V
-6V
-0.6
-0.4
-7V
-6V
-5V
-0.2
-0.1
-4.5V
-4V
-5V
-4.5V
-0.2
0
-4V
-3.5V
-3.5V
0
0
-20
-40
-60
-80
-100
0
-2
-4
-6
-8
-10
VDS - Drain Source Voltage (Volts)
VDS - Drain Source Voltage (Volts)
Output Characteristics
Saturation Characteristics
V
-25V
DS=
-20
-18
-16
-14
-12
-10
-8
-0.6
-0.4
-10V
ID=
-
300mA
-6
-0.2
0
-4
-200mA
-2
-100mA
-50mA
0
0
-2
-4
-6
-8
-10
0
-2
-4
-6
-8
-10
VGS-Gate Source Voltage (Volts)
VGS-Gate Source Voltage (Volts)
Transfer Characteristics
Voltage Saturation Characteristics
100
50
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
V
GS=-10V
ID=-0.1A
I
D=
-300mA
-200mA
-I00mA
-50mA
V
GS=VDS
ID=-1mA
10
-40
120
180
140 160
-20
0
20 40 60 80 100
-1
-10
-20
VGS-Gate Source Voltage (Volts)
T-Temperature (°C)
Normalised RDS(on) and VGS(th) vs Temperature
On-resistance vs gate-source voltage
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ZXMP2120FF
Typical characteristics
200
180
160
200
180
160
VDS=-25V
140
120
140
120
VDS=-25V
100
100
80
60
40
20
80
60
40
20
0
0
0
-0.2
-0.4
-0.6
-0.8
0
-2
-4
-6
-8
-10
VGS-Gate Source Voltage (Volts)
ID- Drain Current (Amps)
Transconductance v drain current
Transconductance v gate-source voltage
0
ID=- 0.4A
100
-2
V
DS=
-50V
-4
-6
80
60
40
20
-100V
-180V
C
iss
-8
-10
-12
-14
-16
Coss
Crss
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
0
-10
-20
-30
-40
-50
VDS-Drain Source Voltage (Volts)
Q-Charge (nC)
Capacitance v drain-source voltage
Gate charge v gate-source voltage
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ZXMP2120FF
Typical characteristics
Current
regulator
QG
50k
0.2F
Same as
D.U.T
12V
QGS
QGD
VG
VDS
IG
D.U.T
ID
VGS
Charge
Basic gate charge waveform
Gate charge test circuit
VDS
90%
RD
VGS
VDS
RG
VCC
10%
VGS
Pulse width Ͻ 1S
Duty factor 0.1%
tr
td(off)
tr
td(on)
t(on)
t(on)
Switching time waveforms
Switching time test circuit
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ZXMP2120FF
Intentionally left blank
Issue 1 - January 2007
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ZXMP2120FF
Package outline - SOT23F
c
D
e1
e
b
b
L1
L
E
E1
E2
b
A1
R
A
Dim.
Millimeters
Inches
Dim.
Millimeters
Inches
Min.
0.80
0.00
0.35
0.10
2.80
Max.
1.00
Min.
Max.
Min.
2.30
1.50
1.10
0.48
0.30
0.05
0°
Max.
2.50
1.70
1.26
0.68
0.50
0.15
12°
Max.
0.0906
0.0590
0.0433
0.0189
0.0153
0.0019
0°
Max.
0.0984
0.0669
0.0496
0.0268
0.0161
0.0059
12°
A
A1
b
0.0315
0.00
0.0394
0.0043
0.0161
0.0079
0.1181
E
E1
E2
L
0.10
0.45
0.20
3.00
0.0153
0.0043
0.1102
c
D
L1
R
e
0.95 ref
0.0374 ref
e1
1.80
2.00
0.0709
0.0787
O
Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches
Issue 1 - January 2007
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ZXMP2120FF
Definitions
Product change
Zetex Semiconductors reserves the right to alter, without notice, specifications, design, price or conditions of supply of any product or
service. Customers are solely responsible for obtaining the latest relevant information before placing orders.
Applications disclaimer
The circuits in this design/application note are offered as design ideas. It is the responsibility of the user to ensure that the circuit is fit for
the user’s application and meets with the user’s requirements. No representation or warranty is given and no liability whatsoever is
assumed by Zetex with respect to the accuracy or use of such information, or infringement of patents or other intellectual property rights
arising from such use or otherwise. Zetex does not assume any legal responsibility or will not be held legally liable (whether in contract,
tort (including negligence), breach of statutory duty, restriction or otherwise) for any damages, loss of profit, business, contract,
opportunity or consequential loss in the use of these circuit applications, under any circumstances.
Life support
Zetex products are specifically not authorized for use as critical components in life support devices or systems without the express written
approval of the Chief Executive Officer of Zetex Semiconductors plc. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body
or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to
cause the failure of the life support device or to affect its safety or effectiveness.
Reproduction
The product specifications contained in this publication are issued to provide outline information only which (unless agreed by the
company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a
representation relating to the products or services concerned.
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when the terms of the contract shall prevail) according to region, supplied at the time of order acknowledgement.
For the latest information on technology, delivery terms and conditions and prices, please contact your nearest Zetex sales office.
Quality of product
Zetex is an ISO 9001 and TS16949 certified semiconductor manufacturer.
To ensure quality of service and products we strongly advise the purchase of parts directly from Zetex Semiconductors or one of our
regionally authorized distributors. For a complete listing of authorized distributors please visit: www.zetex.com/salesnetwork
Zetex Semiconductors does not warrant or accept any liability whatsoever in respect of any parts purchased through unauthorized sales channels.
ESD (Electrostatic discharge)
Semiconductor devices are susceptible to damage by ESD. Suitable precautions should be taken when handling and transporting devices.
The possible damage to devices depends on the circumstances of the handling and transporting, and the nature of the device. The extent
of damage can vary from immediate functional or parametric malfunction to degradation of function or performance in use over time.
Devices suspected of being affected should be replaced.
Green compliance
Zetex Semiconductors is committed to environmental excellence in all aspects of its operations which includes meeting or exceeding reg-
ulatory requirements with respect to the use of hazardous substances. Numerous successful programs have been implemented to reduce
the use of hazardous substances and/or emissions.
All Zetex components are compliant with the RoHS directive, and through this it is supporting its customers in their compliance with
WEEE and ELV directives.
Product status key:
“Preview”
“Active”
Future device intended for production at some point. Samples may be available
Product status recommended for new designs
“Last time buy (LTB)”
Device will be discontinued and last time buy period and delivery is in effect
“Not recommended for new designs” Device is still in production to support existing designs and production
“Obsolete”
Production has been discontinued
Datasheet status key:
“Draft version”
This term denotes a very early datasheet version and contains highly provisional information, which
may change in any manner without notice.
“Provisional version”
“Issue”
This term denotes a pre-release datasheet. It provides a clear indication of anticipated performance.
However, changes to the test conditions and specifications may occur, at any time and without notice.
This term denotes an issued datasheet containing finalized specifications. However, changes to
specifications may occur, at any time and without notice.
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Corporate Headquarters
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© 2007 Published by Zetex Semiconductors plc
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