概述
规格参数
数据手册ZXMP3A16N8TA 概述
30V P-CHANNEL ENHANCEMENT MODE MOSFET 30V P沟道增强型MOSFET 小信号场效应晶体管
ZXMP3A16N8TA 规格参数
| 是否Rohs认证： | 符合 | 生命周期： | Transferred |
| 包装说明： | SOIC-8 | Reach Compliance Code： | unknown |
| ECCN代码： | EAR99 | 风险等级： | 3.64 |
| 配置： | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压： | 30 V |
| 最大漏极电流 (Abs) (ID)： | 5.6 A | 最大漏极电流 (ID)： | 5.6 A |
| 最大漏源导通电阻： | 0.04 Ω | FET 技术： | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 代码： | R-PDSO-G8 | JESD-609代码： | e3 |
| 湿度敏感等级： | 1 | 元件数量： | 1 |
| 端子数量： | 8 | 工作模式： | ENHANCEMENT MODE |
| 最高工作温度： | 150 °C | 封装主体材料： | PLASTIC/EPOXY |
| 封装形状： | RECTANGULAR | 封装形式： | SMALL OUTLINE |
| 峰值回流温度（摄氏度）： | 260 | 极性/信道类型： | P-CHANNEL |
| 最大功率耗散 (Abs)： | 2.8 W | 认证状态： | Not Qualified |
| 子类别： | Other Transistors | 表面贴装： | YES |
| 端子面层： | Matte Tin (Sn) | 端子形式： | GULL WING |
| 端子位置： | DUAL | 处于峰值回流温度下的最长时间： | 40 |
| 晶体管应用： | SWITCHING | 晶体管元件材料： | SILICON |
ZXMP3A16N8TA 数据手册
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PDF下载ZXMP3A16N8
30V P-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
(BR)DSS
V
= -30V; R
= 0.040 I = -6.7A
DS(ON) D
DESCRIPTION
This new generation of trench MOSFETs from Zetex utilizes a unique structure
that combines the benefits of low on-resistance with fast switching speed. This
makes them ideal for high efficiency, low voltage, power management
applications.
SO8
FEATURES
•
•
•
•
•
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
Low profile SOIC package
APPLICATIONS
•
•
Disconnect switches
Motor control
ORDERING INFORMATION
DEVICE
REEL
SIZE
TAPE
WIDTH
QUANTITY
PER REEL
PINOUT
ZXMP3A16N8TA
ZXMP3A16N8TC
7”
12mm
12mm
500 units
13”
2500 units
DEVICE MARKING
•
ZXMP
3A16
Top View
ISSUE 2 - MAY 2007
1
ZXMP3A16N8
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
LIMIT
-30
UNIT
Drain-Source Voltage
Gate Source Voltage
V
V
V
V
A
DSS
GS
20
Continuous Drain Current V =-10V; T =25°C (b)
I
-6.7
-5.4
-5.6
GS
A
A
A
D
V
V
=-10V; T =70°C (b)
GS
=-10V; T =25°C (a)
GS
Pulsed Drain Current (c)
I
I
I
-26
-3.2
-26
A
A
A
DM
S
Continuous Source Current (Body Diode) (b)
Pulsed Source Current (Body Diode) (c)
SM
Power Dissipation at T =25°C (a)
A
P
1.9
W
D
D
Linear Derating Factor
15.2
mW/°C
Power Dissipation at T =25°C (b)
A
Linear Derating Factor
P
2.8
22.4
W
mW/°C
Operating and Storage Temperature Range
T :T
-55 to +150
°C
j
stg
THERMAL RESISTANCE
PARAMETER
SYMBOL
VALUE
65
UNIT
°C/W
°C/W
Junction to Ambient (a)
Junction to Ambient (b)
R
R
θJA
θJA
45
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface mounted on FR4 PCB measured at tр5 secs.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.05, pulse width 10s - pulse width limited by maximum junction temperature. Refer to
Transient Thermal Impedance graph.
ISSUE 2 - MAY 2007
2
ZXMP3A16N8
CHARACTERISTICS
RDS(on)
Limited
2.0
1.6
1.2
0.8
0.4
10
1
DC
1s
100ms
10ms
100m
10m
1ms
Single Pulse
100µs
10
Tamb=25°C
0.0
0
1
20 40 60 80
140 160
Temperature1(0°C0 ) 120
-V Drain-Source Voltage (V)
DSSafe Operating Area
Derating Curve
70
60
50
40
30
20
10
0
Tamb=25°C
Single Pulse
amb=25°C
T
100
10
1
D=0.5
D=0.2
Single Pulse
D=0.05
D=0.1
100µ 1m 10m 100m
1
100 1k
Pulse Width (s) 10
100µ 1m 10m 100m
1
10 100 1k
Pulse Width (s)
Pulse Power Dissipation
Transient Thermal Impedance
ISSUE 2 - MAY 2007
3
ZXMP3A16N8
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated)
amb
PARAMETER
SYMBOL
MIN. TYP. MAX. UNIT CONDITIONS
STATIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
V
I =-250μA, V =0V
(BR)DSS
D
GS
-30
V
A
nA
V
I
I
V
=-30V, V =0V
DS GS
DSS
GSS
-1.0
100
V
=Ϯ20V, V =0V
DS
GS
Gate-Source Threshold Voltage
Static Drain-Source On-State Resistance (1)
V
R
I =-250A,V = V
DS GS
D
GS(th)
DS(on)
-1.0
V
V
=-10V, I =-4.2A
D
GS
GS
0.040
0.070
⍀
⍀
=-4.5V, I =-3.4A
D
Forward Transconductance (1)(3)
g
V
=-15V,I =-4.2A
D
fs
DS
9.2
S
DYNAMIC (3)
Input Capacitance
C
C
C
iss
1022
267
pF
pF
pF
V
=-15 V, V =0V,
DS
GS
Output Capacitance
Reverse Transfer Capacitance
oss
rss
f=1MHz
229
SWITCHING(2) (3)
Turn-On Delay Time
Rise Time
t
t
t
t
d(on)
3.8
6.5
ns
ns
ns
ns
nC
r
V
=-15V, I =-1A
DD D
R =6.0Ω, V =-10V
G
GS
Turn-Off Delay Time
Fall Time
d(off)
f
37.1
21.4
17.2
Gate Charge
Q
V
=-15V,V =-5V,
DS GS
g
I =-4.2A
D
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Q
Q
Q
g
29.6
2.8
nC
nC
nC
V
D
=-15V,V =-10V,
GS
DS
gs
gd
I =-4.2A
8.6
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
V
T =25°C, I =-3.6A,
GS
SD
J
S
-0.85
-0.95
V
V
=0V
Reverse Recovery Time (3)
Reverse Recovery Charge (3)
t
T =25°C, I =-2A,
J F
di/dt= 100A/μs
rr
21.7
16.1
ns
Q
rr
nC
NOTES
(1) Measured under pulsed conditions. Width ≤300μs. Duty cycle ≤ 2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ISSUE 2 - MAY 2007
4
ZXMP3A16N8
CHARACTERISTICS
10V
4V
4V
3.5V
3V
T = 150°C
T=25°C
3.5V
3V
10V
10
1
10
1
2.5V
2V
2.5V
2V
1.5V
-VGS
-VGS
1.5V
0.1
0.01
0.1
0.01
0.1
1
10
0.1
1
10
-VDS Drain-Source Voltage (V)
-VDS Drain-Source Voltage (V)
Output Characteristics
Output Characteristics
1.6
1.4
1.2
1.0
0.8
0.6
0.4
V
=-10V
10
1
IDG=S -4.2A
T = 150°C
RDS(on)
T = 25°C
VGS(th)
V
=VDS
IDG=S -250uA
-VDS =10V
0.1
1
3
-50
0
50
100
150
-VGS Gate-2Source Voltage (V)
Tj Junction Temperature (°C)
Typical Transfer Characteristics
Normalised Curves v Temperature
100
10
1.5V
T=25°C
100
10
T = 150°C
-VGS
2V
2.5V
T = 25°C
3V
1
1
3.5V
4V
0.1
0.01
0.1
10V
0.01
-0V.2 Source-Drain Volta1g.e0 (V)1.2
0.0
0.4
0.6
0.8
0.01
0.1
1
10
-ID Drain Current (A)
SD
Source-Drain Diode Forward Voltage
On-Resistance v Drain Current
ISSUE 2 - MAY 2007
5
ZXMP3A16N8
ISSUE 2 - MAY 2007
6
ZXMP3A16N8
Definitions
Product change
Zetex Semiconductors reserves the right to alter, without notice, specifications, design, price or conditions of supply of any product or service.
Customers are solely responsible for obtaining the latest relevant information before placing orders.
Applications disclaimer
The circuits in thisdesign/application note are offered as design ideas. It is the responsibility ofthe user toensure thatthe circuit is fitforthe user's
application and meets with the user's requirements. No representation or warranty is given and no liability whatsoever is assumed by Zetex with
respect to the accuracy or use of such information, or infringement of patents or other intellectual property rights arising from such use or
otherwise. Zetex does not assume any legal responsibility or will not be held legally liable (whether in contract, tort (including negligence),
breach of statutory duty, restriction or otherwise) for any damages, loss of profit, business, contract, opportunity or consequential loss in the use
of these circuit applications, under any circumstances.
Life support
Zetex products are specifically not authorized for use as critical components in life support devices or systems without the express written
approval of the Chief Executive Officer of Zetex Semiconductors plc. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body
or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions
for use provided in the labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Reproduction
The product specifications contained in this publication are issued to provide outline information only which (unless agreed by the company in
writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating
to the products or services concerned.
Terms and Conditions
All products are sold subjects to Zetex' terms and conditions of sale, and this disclaimer (save in the event of a conflict between the two when the
terms of the contract shall prevail) according to region, supplied at the time of order acknowledgement.
For the latest information on technology, delivery terms and conditions and prices, please contact your nearest Zetex sales office.
Quality of product
Zetex is an ISO 9001 and TS16949 certified semiconductor manufacturer.
To ensure quality of service and products we strongly advise the purchase of parts directly from Zetex Semiconductors or one of our regionally
authorized distributors. For a complete listing of authorized distributors please visit: www.zetex.com/salesnetwork
Zetex Semiconductors does not warrant or accept any liability whatsoever in respect of any parts purchased through unauthorized sales
channels.
ESD (Electrostatic discharge)
Semiconductor devices are susceptible to damage by ESD. Suitable precautions should be taken when handling and transporting devices. The
possible damage to devices depends on the circumstances of the handling and transporting, and the nature of the device. The extent of damage
can vary from immediate functional or parametric malfunction to degradation of function or performance in use over time. Devices suspected of
being affected should be replaced.
Green compliance
Zetex Semiconductors is committed to environmental excellence in all aspects of its operations which includes meeting or exceeding regulatory
requirements with respect to the use of hazardous substances. Numerous successful programs have been implemented to reduce the use of
hazardous substances and/or emissions.
All Zetex components are compliant with the RoHS directive, and through this it is supporting its customers in their compliance with WEEE and
ELV directives.
Product status key:
"Preview"Future device intended for production at some point. Samples may be available
"Active"Product status recommended for new designs
"Last time buy (LTB)"Device will be discontinued and last time buy period and delivery is in effect
"Not recommended for new designs"Device is still in production to support existing designs and production
"Obsolete"Production has been discontinued
Datasheet status key:
"Draft version"This term denotes a very early datasheet version and contains highly provisional
information, which may change in any manner without notice.
"Provisional version"This term denotes a pre-release datasheet. It provides a clear indication of anticipated performance. However, changes to
the test conditions and specifications may occur, at any time and without notice.
"Issue"This term denotes an issued datasheet containing finalized specifications. However, changes to specifications may occur, at any time and
without notice.
ISSUE 2 - MAY 2007
7
ZXMP3A16N8
PACKAGE OUTLINE
CONTROLLING DIMENSIONS ARE IN INCHES
APPROX IN MILLIMETERS
PACKAGE DIMENSIONS
Millimeters
Inches
Min
Millimeters
Inches
Min Max
0.050 BSC
DIM
DIM
Min
1.35
0.10
4.80
5.80
3.80
0.40
Max
Max
0.069
0.010
0.197
0.244
0.157
0.050
Min
Max
A
A1
D
1.75
0.25
5.00
6.20
4.00
1.27
0.053
0.004
0.189
0.228
0.150
0.016
e
b
c
1.27 BSC
0.33
0.19
0°
0.51
0.25
8°
0.013
0.020
0.010
8°
0.008
0°
H
⍜
h
-
E
0.25
-
0.50
-
0.010
-
0.020
-
L
© Zetex Semiconductors plc 2007
Europe
Americas
Asia Pacific
Corporate Headquarters
Zetex GmbH
Kustermann-Park
Balanstraße 59
D-81541 München
Germany
Zetex Inc
Zetex (Asia) Ltd
Zetex Semiconductors plc
Zetex Technology Park
Chadderton, Oldham, OL9 9LL
United Kingdom
700 Veterans Memorial Hwy
Hauppauge, NY 11788
USA
3701-04 Metroplaza Tower 1
Hing Fong Road, Kwai Fong
Hong Kong
Telefon: (49) 89 45 49 49 0
Fax: (49) 89 45 49 49 49
europe.sales@zetex.com
Telephone: (1) 631 360 2222
Fax: (1) 631 360 8222
usa.sales@zetex.com
Telephone: (852) 26100 611
Fax: (852) 24250 494
asia.sales@zetex.com
Telephone (44) 161 622 4444
Fax: (44) 161 622 4446
hq@zetex.com
ISSUE 2 - MAY 2007
8
ZXMP3A16N8TA 相关器件
| 型号 | 制造商 | 描述 | 价格 | 文档 |
| ZXMP3A16N8TC | ZETEX | 30V P-CHANNEL ENHANCEMENT MODE MOSFET | 获取价格 |
|
| ZXMP3A16N8TC | DIODES | 30V P-CHANNEL ENHANCEMENT MODE MOSFET | 获取价格 |
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| ZXMP3A16N8_07 | ZETEX | 30V P-CHANNEL ENHANCEMENT MODE MOSFET | 获取价格 |
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| ZXMP3A17DN8 | ZETEX | DUAL P-CHANNEL 30V ENHANCEMENT MODE MOSFET | 获取价格 |
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| ZXMP3A17DN8 | DIODES | DUAL P-CHANNEL 30V ENHANCEMENT MODE MOSFET | 获取价格 |
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| ZXMP3A17DN8(1) | ETC | 获取价格 |
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| ZXMP3A17DN8TA | ZETEX | DUAL P-CHANNEL 30V ENHANCEMENT MODE MOSFET | 获取价格 |
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| ZXMP3A17DN8TA | DIODES | DUAL P-CHANNEL 30V ENHANCEMENT MODE MOSFET | 获取价格 |
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| ZXMP3A17DN8TC | ZETEX | DUAL P-CHANNEL 30V ENHANCEMENT MODE MOSFET | 获取价格 |
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| ZXMP3A17DN8TC | DIODES | DUAL P-CHANNEL 30V ENHANCEMENT MODE MOSFET | 获取价格 |
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