ZXMP4A16G [ZETEX]
40V P-CHANNEL ENHANCEMENT MODE MOSFET; 40V P沟道增强型MOSFET
| 型号： | ZXMP4A16G |
| 厂家： | 
ZETEX SEMICONDUCTORS |
| 描述： | 40V P-CHANNEL ENHANCEMENT MODE MOSFET |
| 文件： | 总7页 (文件大小：269K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ZXMP4A16G
40V P-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
(BR)DSS
V
= -40V: R
= 0.060 : I = -6.4A
DS(on) D
DESCRIPTION
This new generation of Trench MOSFETs from Zetex utilizes a unique structure
that combines the benefits of low on-resistance with fast switching speed. This
makes them ideal for high efficiency, low voltage, power management
applications.
SOT223
FEATURES
·
·
·
·
·
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
SOT223 package
APPLICATIONS
·
·
·
·
DC-DC Converters
Disconnect switches
Audio output stages
Motor Control
PINOUT
ORDERING INFORMATION
DEVICE
REEL
SIZE
TAPE
WIDTH
QUANTITY
PER REEL
ZXMP4A16GTA
ZXMP4A16GTC
7”
12mm
12mm
1000 units
4000 units
13”
Top View
DEVICE MARKING
· ZXMP
4A16
ISSUE 4 - J ULY 2003
1
S E M IC O N D U C T O R S
ZXMP4A16G
ABSOLUTE MAXIMUM RATING
PARAMETER
S YMBOL
VDSS
VGS
LIMIT
-40
UNIT
Drain-Source Voltage
Gate-Source Voltage
V
V
A
Ϯ20
(b)
(b)
(a)
Continuous Drain Current (VGS= -10V; TA=25°C)
(VGS= -10V; TA=70°C)
ID
-6.4
-5.1
-4.6
(VGS= -10V; TA=25°C)
(c)
Pulsed Drain Current
IDM
IS
-21
-5.2
-21
A
A
A
(b)
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)(c)
ISM
PD
(a)
Power Dissipation at TA=25°C
Linear Derating Factor
2.0
16
W
mW/°C
(b)
Power Dissipation at TA=25°C
Linear Derating Factor
PD
3.9
31
W
mW/°C
Operating and Storage Temperature Range
Tj:Tstg
-55 to +150
°C
THERMAL RESISTANCE
PARAMETER
S YMBOL
RθJA
VALUE
62.5
UNIT
°C/W
°C/W
(a)
Junction to Ambient
(b)
Junction to Ambient
RθJA
32.2
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at tр10 secs.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.05 pulse width limited by maximum junction temperature.
ISSUE 4 - J ULY 2003
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S E M IC O N D U C T O R S
ZXMP4A16G
CHARACTERISTICS
ISSUE 4 - J ULY 2003
3
S E M IC O N D U C T O R S
ZXMP4A16G
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
S YMBOL MIN. TYP. MAX. UNIT CONDITIONS
S TATIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
V(BR)DSS
IDSS
-40
V
ID=-250µA, VGS=0V
VDS=-40V, VGS=0V
VGS=Ϯ20V, VDS=0V
ID=-250A, VDS= VGS
VGS=-10V, ID=-3.8A
-1
A
nA
V
IGSS
100
Gate-Source Threshold Voltage
VGS(th)
RDS(on)
-1.0
Static Drain-Source On-State
0.060
0.100
⍀
⍀
(1)
Resistance
V
GS=-4.5V, ID=-2.9A
(1)(3)
Forward Transconductance
gfs
8.85
S
VDS=-15V,ID=-3.8A
(3)
DYNAMIC
Input Capacitance
Ciss
Coss
Crss
1007
130
85
pF
pF
pF
V
DS=-20V, VGS=0V,
Output Capacitance
f=1MHz
Reverse Transfer Capacitance
(2)(3)
S WITCHING
Turn-On Delay Time
Rise Time
td(on)
tr
td(off)
tf
2.33
ns
ns
ns
ns
nC
8.84
V
DD =-20V, ID=-1A
RG 6.0⍀, VGS=-10V
Turn-Off Delay Time
Fall Time
29.18
12.54
13.6
Gate Charge
Qg
VDS=-20V,VGS=-5V,
ID=-3.8A
Total Gate Charge
Qg
26.1
2.8
nC
nC
nC
V
DS=-20V,VGS=-10V,
Gate-Source Charge
Gate-Drain Charge
S OURCE-DRAIN DIODE
Qgs
Qgd
ID=-3.8A
4.8
(1)
Diode Forward Voltage
VSD
-0.85 -1.2
V
TJ=25ЊC, IS=-3.4A,
V
GS=0V
(3)
Reverse Recovery Time
trr
27.2
25.4
ns
TJ=25ЊC, IF=-3A,
di/dt= 100A/s
(3)
Reverse Recovery Charge
Qrr
nC
NOTES
(1) Measured under pulsed conditions. Width Յ300µs. Duty cycle Յ 2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ISSUE 4 - J ULY 2003
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S E M IC O N D U C T O R S
ZXMP4A16G
TYPICAL CHARACTERISTICS
ISSUE 4 - J ULY 2003
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S E M IC O N D U C T O R S
ZXMP4A16G
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S E M IC O N D U C T O R S
ZXMP4A16G
PACKAGE OUTLINE
PAD LAYOUT DETAILS
PACKAGE DIMENSIONS
Millim e t re s
In ch e s
Millim e t re s
DIM
In ch e s
DIM
Min
-
Ma x
1.80
0.10
0.84
3.10
0.33
6.70
Min
Ma x
Min
Ma x
Min
Ma x
0.0905 BSC
0.181 BSC
A
A1
b
-
0.071
e
e1
E
2.30 BSC
4.60 BSC
0.02
0.66
2.90
0.23
6.30
0.0008 0.004
0.026
0.114
0.009
0.248
0.033
0.122
0.013
0.264
6.70
7.30
3.70
-
0.264
0.130
0.287
0.146
-
b2
C
E1
L
3.30
0.90
0.0355
D
© Zetex plc 2003
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These offices are supported by agents and distributors in major countries world-wide.
This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced
for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company
reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
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ISSUE 4 - J ULY 2003
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S E M IC O N D U C T O R S
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