ZXT11N15DFTA [ZETEX]
15V NPN SILICON LOW SATURATION TRANSISTOR; 15V NPN硅低饱和晶体管
| 型号： | ZXT11N15DFTA |
| 厂家： | 
ZETEX SEMICONDUCTORS |
| 描述： | 15V NPN SILICON LOW SATURATION TRANSISTOR |
| 文件： | 总6页 (文件大小：414K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ZXT11N15DF
SuperSOT4™
15V NPN SILICON LOW SATURATION TRANSISTOR
SUMMARY
V
CEO=15V; RSAT = 37m ; IC= 3A
DESCRIPTION
This new 4th generation ultra low saturation transistor utilises the Zetex
matrix structure combined with advanced assembly techniques to give
extremely low on state losses. This makes it ideal for high efficiency, low
voltage switching applications.
SOT23
FEATURES
•
•
•
•
•
Extremely Low Equivalent On Resistance
Extremely Low Saturation Voltage
h
FE characterised up to 5A
IC=3A Continuous Collector Current
SOT23 package
APPLICATIONS
•
•
•
•
DC - DC Converters
Power Management Functions
Power switches
E
C
Motor control
B
ORDERING INFORMATION
DEVICE
REEL SIZE
(inches)
TAPE WIDTH
(mm)
QUANTITY
PER REEL
Top View
ZXT11N15DFTA
ZXT11N15DFTC
7
8mm embossed
8mm embossed
3000 units
10000 units
13
DEVICE MARKING
1N5
ISSUE 1 - DECEMBER 1999
1
ZXT11N15DF
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
LIMIT
40
UNIT
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
V
V
V
CBO
CEO
EBO
15
V
7.5
5
V
I
I
I
A
CM
Continuous Collector Current
Base Current
3
A
C
B
500
mA
Power Dissipation at TA=25°C (a)
Linear Derating Factor
P
625
5
mW
mW/°C
D
Power Dissipation at TA=25°C (b)
Linear Derating Factor
P
806
6.4
mW
mW/°C
D
Operating and Storage Temperature Range
T :T
-55 to +150
°C
j
stg
THERMAL RESISTANCE
PARAMETER
SYMBOL
VALUE
UNIT
Junction to Ambient (a)
Junction to Ambient (b)
R
R
200
155
°C/W
°C/W
θJA
θJA
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at tр5 secs.
ISSUE 1 - DECEMBER 1999
2
ZXT11N15DF
TYPICAL CHARACTERISTICS
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
10
DC
1
1s
100ms
10ms
100m
10m
1ms
100µs
Single Pulse Tamb=25°C
0
20
40
60
80
100 120 140 160
100m
1
10
VCE Collector-Emitter Voltage (V)
Temperature (°C)
Derating Curve
Safe Operating Area
225
200
175
150
125
100
75
D=0.5
Single Pulse
D=0.2
50
D=0.05
25
D=0.1
10m 100m
0
100µ
1m
1
10
100
1k
Pulse Width (s)
Transient Thermal Impedance
ISSUE 1 - DECEMBER 1999
3
ZXT11N15DF
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Collector-Base Breakdown
Voltage
V
V
V
40
15
7.5
V
I =100A
(BR)CBO
(BR)CEO
C
Collector-Emitter Breakdown
Voltage
V
I =10mA*
C
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
V
I =100A
E
(BR)EBO
CBO
I
I
I
100
100
100
nA
nA
nA
V
V
V
=32V
=6V
CB
Emitter Cut-Off Current
EBO
EB
Collector Emitter Cut-Off Current
=32V
CES
CES
Collector-Emitter Saturation
Voltage
V
7
57
10
80
mV
mV
mV
mV
I =0.1A, I =10mA*
C B
CE(sat)
I =1A, I =10mA*
C
B
37
55
I =1A, I =100mA*
C B
110
150
I =3A, I =150mA*
C B
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
V
V
h
0.9
1.0
V
V
I =3A, I =150mA*
C B
BE(sat)
BE(on)
FE
0.85 1.0
I =3A, V =2V*
C CE
Static Forward Current Transfer
Ratio
200
300
250
200
150
I =10mA, V =2V*
C CE
900
I =200mA, V =2V*
C
C
CE
I =1A, V =2V*
CE
I =3A, V =2V*
C
CE
CE
I =5A, V =2V*
C
Transition Frequency
f
145
MHz
I =50mA, V =10V
T
C
CE
f=50MHz
Output Capacitance
Turn-On Time
C
26
110
220
pF
ns
ns
V
=10V, f=1MHz
CB
obo
(on)
(off)
t
t
V
=10V, I =3A
CC C
=I =30mA
I
B1 B2
Turn-Off Time
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
ISSUE 1 - DECEMBER 1999
4
ZXT11N15DF
TYPICAL CHARACTERISTICS
0.25
0.20
0.15
0.10
0.05
0.00
Tamb=25°C
IC/IB=50
100m
10m
1m
100°C
IC/IB=100
IC/IB=50
25°C
-55°C
IC/IB=10
1m
10m
100m
1
10
1m
10m
100m
1
10
IC Collector Current (A)
IC Collector Current (A)
VCE(SAT) v IC
VCE(SAT) v IC
VCE=2V
IC/IB=50
1.0
0.8
0.6
0.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
100°C
25°C
-55°C
25°C
100°C
-55°C
1m
10m
100m
1
10
1m
10m
100m
1
10
IC Collector Current (A)
IC Collector Current (A)
hFE v IC
VBE(SAT) v IC
VCE=2V
-55°C
1.0
0.8
0.6
0.4
25°C
100°C
1m
10m
100m
1
10
IC Collector Current (A)
VBE(ON) v IC
ISSUE 1 - DECEMBER 1999
5
ZXT11N15DF
PACKAGE DIMENSIONS
PAD LAYOUT DETAILS
DIM Millimetres
Inches
Min
Min
Max
3.05
1.40
1.10
0.53
0.15
Max
A
B
C
D
F
2.67
0.105
0.120
0.055
0.043
0.021
0.0059
1.20
0.047
–
–
0.37
0.0145
0.0033
NOM 0.075
0.0004
0.0825
NOM 0.037
0.085
NOM 1.9
0.01
G
K
L
0.10
2.50
0.004
2.10
0.0985
N
NOM 0.95
Zetex plc.
Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom.
Telephone: (44)161 622 4422 (Sales), (44)161 622 4444 (General Enquiries)
Fax: (44)161 622 4420
Zetex GmbH
Zetex Inc.
Zetex (Asia) Ltd.
3510 Metroplaza, Tower 2
Hing Fong Road,
Kwai Fong, Hong Kong
Telephone:(852) 26100 611
Fax: (852) 24250 494
These are supported by
agents and distributors in
major countries world-wide
© Zetex plc 1999
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D-81673 München
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Fax: (49) 89 45 49 49 49
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Commack NY 11725
USA
Telephone: (631) 543-7100
Fax: (631) 864-7630
Internet:http://www.zetex.com
This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for
any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves
the right to alter without notice the specification, design, price or conditions of supply of any product or service.
ISSUE 1 - DECEMBER 1999
6
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