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ZXT13P12DE6

更新时间：2024-09-18 01:53:44
品牌：ZETEX
描述：12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR

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ZXT13P12DE6 概述

12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR 12V PNP硅低饱和开关晶体管

ZXT13P12DE6 数据手册

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ZXT13P12DE6  
SuperSOT4™  
12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR  
SUMMARY  
VCEO=-12V; RSAT = 37m ; IC= -4A  
DESCRIPTION  
This new 4th generation ultra low saturation transistor utilises the Zetex  
matrix structure combined with advanced assembly techniques to give  
extremely low on state losses. This makes it ideal for high efficiency, low  
voltage switching applications.  
SOT23-6  
FEATURES  
•
•
•
•
•
Extremely Low Equivalent On Resistance  
Extremely Low Saturation Voltage  
hFE characterised up to 15A  
IC=4A Continuous Collector Current  
SOT23-6 package  
APPLICATIONS  
•
•
•
•
DC - DC Converters  
Power Management Functions  
Power switches  
Motor control  
C
C
B
C
C
E
ORDERING INFORMATION  
DEVICE  
REEL SIZE  
(inches)  
TAPE WIDTH  
(mm)  
QUANTITY  
PER REEL  
ZXT13P12DE6TA  
ZXT13P12DE6TC  
7
8mm embossed  
8mm embossed  
3000 units  
10000 units  
Top View  
13  
DEVICE MARKING  
P12D  
ISSUE 1 - DECEMBER 1999  
1
ZXT13P12DE6  
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
LIMIT  
-20  
UNIT  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Peak Pulse Current  
V
V
V
CBO  
CEO  
EBO  
-12  
V
-7.5  
-15  
V
I
I
I
A
CM  
Continuous Collector Current  
Base Current  
-4  
A
C
B
-500  
mA  
Power Dissipation at TA=25°C (a)  
Linear Derating Factor  
P
1.1  
8.8  
W
mW/°C  
D
Power Dissipation at TA=25°C (b)  
Linear Derating Factor  
P
1.7  
13.6  
W
mW/°C  
D
Operating and Storage Temperature Range  
T :T  
-55 to +150  
°C  
j
stg  
THERMAL RESISTANCE  
PARAMETER  
SYMBOL  
VALUE  
UNIT  
°C/W  
°C/W  
Junction to Ambient (a)  
Junction to Ambient (b)  
R
R
113  
73  
θJA  
θJA  
NOTES  
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,  
in still air conditions  
(b) For a device surface mounted on FR4 PCB measured at tр5 secs.  
ISSUE 1 - DECEMBER 1999  
2
ZXT13P12DE6  
TYPICAL CHARACTERISTICS  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
10  
1
DC  
1s  
100ms  
10ms  
100m  
10m  
1ms  
100µs  
Single Pulse Tamb=25°C  
100m  
1
10  
0
20  
40  
60  
80  
100 120 140 160  
VCE Collector-Emitter Voltage (V)  
Temperature (°C)  
Safe Operating Area  
Derating Curve  
120  
100  
80  
60  
40  
20  
0
D=0.5  
D=0.2  
Single Pulse  
D=0.05  
D=0.1  
100µ  
1m  
10m 100m  
1
10  
100  
1k  
Pulse Width (s)  
Transient Thermal Impedance  
ISSUE 1 - DECEMBER 1999  
3
ZXT13P12DE6  
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).  
PARAMETER  
SYMBOL MIN.  
TYP.  
MAX.  
UNIT  
CONDITIONS.  
Collector-Base Breakdown  
Voltage  
V
V
V
-20  
-12  
-7.5  
-33  
V
I =-100␮A  
(BR)CBO  
(BR)CEO  
C
Collector-Emitter Breakdown  
Voltage  
-25  
V
I =-10mA*  
C
Emitter-Base Breakdown Voltage  
Collector Cut-Off Current  
-8.5  
V
I =-100␮A  
E
(BR)EBO  
CBO  
I
I
I
-100  
-100  
-100  
nA  
nA  
nA  
V
V
V
=-16V  
=-6V  
CB  
Emitter Cut-Off Current  
EBO  
EB  
Collector Emitter Cut-Off Current  
=-16V  
CES  
CES  
Collector-Emitter Saturation  
Voltage  
V
-7.5  
-10  
-90  
-175  
-250  
-175  
mV  
mV  
mV  
mV  
mV  
I =-0.1A, I =-10mA*  
C B  
CE(sat)  
-68  
-135  
-200  
-150  
I =-1A, I =-10mA*  
C B  
I =-3A, I =-50mA*  
C B  
I =-4A, I =-50mA*  
C
B
I =-4A, I =-400mA*  
C
B
Base-Emitter Saturation Voltage  
Base-Emitter Turn-On Voltage  
V
V
h
-1.0  
-0.9  
V
V
I =-4A, I =-50mA*  
C B  
BE(sat)  
BE(on)  
FE  
I =-4A, V =-2V*  
C
CE  
Static Forward Current Transfer  
Ratio  
300  
300  
200  
20  
500  
I =-10mA, V =-2V*  
C CE  
450  
300  
30  
900  
I =-1A, V =-2V*  
C CE  
I =-4A, V =-2V*  
C
CE  
I =-15A, V =-2V*  
C
CE  
Transition Frequency  
f
55  
MHz  
I =-50mA, V =-10V  
T
C
CE  
f=50MHz  
Output Capacitance  
Turn-On Time  
C
115  
70  
pF  
ns  
ns  
V
=-10V, f=1MHz  
CB  
obo  
(on)  
(off)  
t
t
V
=-10V, I =-3A  
CC C  
=I =-60mA  
I
B1 B2  
Turn-Off Time  
265  
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle 2%  
ISSUE 1 - DECEMBER 1999  
4
ZXT13P12DE6  
TYPICAL CHARACTERISTICS  
0.25  
IC/IB=50  
Tamb=25°C  
0.20  
0.15  
0.10  
100m  
10m  
1m  
100°C  
25°C  
IC/IB=100  
IC/IB=50  
0.05  
0.00  
IC/IB=10  
-55°C  
1m  
10m  
100m  
1
10  
1m  
10m  
100m  
1
10  
IC Collector Current (A)  
IC Collector Current (A)  
VCE(SAT) v IC  
VCE(SAT) v IC  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
VCE=2V  
IC/IB=50  
1.0  
0.8  
0.6  
0.4  
100°C  
-55°C  
25°C  
25°C  
100°C  
-55°C  
1m  
10m  
100m  
1
10  
1m  
10m  
100m  
1
10  
IC Collector Current (A)  
IC Collector Current (A)  
VBE(SAT) v IC  
hFE v IC  
VCE=2V  
-55°C  
1.0  
0.8  
0.6  
0.4  
25°C  
100°C  
1m  
10m  
100m  
1
10  
IC Collector Current (A)  
VBE(ON) v IC  
ISSUE 1 - DECEMBER 1999  
5
ZXT13P12DE6  
PACKAGE DIMENSIONS  
PAD LAYOUT DETAILS  
b
e
2
L
E1  
E
DATUM A  
a
e1  
D
A
A2  
A1  
DIM Millimetres  
Inches  
Min  
Min  
Max  
1.45  
0.15  
1.30  
0.50  
0.20  
3.00  
3.00  
1.75  
0.60  
Max  
A
0.90  
0.35  
0.057  
0.006  
0.051  
0.019  
0.008  
0.118  
0.118  
0.069  
0.002  
A1  
A2  
b
0.00  
0
0.90  
0.035  
0.014  
0.0035  
0.110  
0.102  
0.059  
0.004  
0.35  
C
0.09  
D
2.80  
E
2.60  
E1  
L
1.50  
0.10  
e
0.95 REF  
1.90 REF  
0°  
0.037 REF  
0.074 REF  
0°  
e1  
L
10°  
10°  
Zetex plc.  
Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom.  
Telephone: (44)161 622 4422 (Sales), (44)161 622 4444 (General Enquiries)  
Fax: (44)161 622 4420  
Zetex GmbH  
Zetex Inc.  
Zetex (Asia) Ltd.  
3510 Metroplaza, Tower 2  
Hing Fong Road,  
Kwai Fong, Hong Kong  
Telephone:(852) 26100 611  
Fax: (852) 24250 494  
These are supported by  
Streitfeldstraße 19  
D-81673 München  
Germany  
Telefon: (49) 89 45 49 49 0  
Fax: (49) 89 45 49 49 49  
47 Mall Drive, Unit 4  
Commack NY 11725  
USA  
Telephone: (631) 543-7100  
Fax: (631) 864-7630  
agents and distributors in  
major countries world-wide  
© Zetex plc 1999  
Internet:http://www.zetex.com  
This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for  
any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves  
the right to alter without notice the specification, design, price or conditions of supply of any product or service.  
ISSUE 1 - DECEMBER 1999  
6

ZXT13P12DE6 相关器件

型号 制造商 描述 价格 文档
ZXT13P12DE6TA ZETEX 12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR 获取价格
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ZXT13P12DE6TC ZETEX 12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR 获取价格
ZXT13P12DE6TC DIODES 12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR 获取价格
ZXT13P20DE6 ZETEX 20V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR 获取价格
ZXT13P20DE6 DIODES 20V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR 获取价格
ZXT13P20DE6TA ZETEX 20V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR 获取价格
ZXT13P20DE6TA DIODES 20V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR 获取价格
ZXT13P20DE6TC ZETEX 20V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR 获取价格
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