ZXT4M322TC [ZETEX]
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型号: | ZXT4M322TC |
厂家: | ![]() |
描述: | Transistor |
文件: | 总6页 (文件大小:112K) |
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ZXT4M322
TM
MPPS Miniature Package Pow er Solutions
70V PNP LOW SATURATION TRANSISTOR
SUMMARY
PNP— V
= -70V; R
= 117m ; I = -2.5A
SAT C
CEO
DESCRIPTION
Packaged in the new innovative 2mm x 2mm MLP (Micro Leaded Package) outline,
this new 4th generation low saturation PNP transistor offers extremely low on state
losses making it ideal for use in DC-DC circuits and various driving and power
management functions.
Additionally users gain several other key benefits:
Perform ance capability equivalent to m uch larger packages
Im proved circuit efficiency & pow er levels
PCB area and device placem ent savings
Low er Package Height (0.9m m nom )
MLP322
Reduced com ponent count
FEATURES
• Low Equivalent On Resistance
• Extrem ely Low Saturation Voltage (-220m V m ax @1A)
• hFE specified up to 3A
• IC=2.5A Continuous Collector Current
• 2m m x 2m m MLP
APPLICATIONS
• DC - DC Converters
• DC - DC Modules
• Power switches
• Motor control
ORDERING INFORMATION
DEVICE
REEL
SIZE
TAPE
WIDTH
QUANTITY
PER REEL
ZXTD4M322TA
ZXTD4M322TC
7”
8m m
8m m
3000
13”
10000
Underside View
DEVICE MARKING
• S4
ISSUE 1 - J UNE 2003
1
S E M IC O N D U C T O R S
ZXT4M322
ABSOLUTE MAXIMUM RATINGS
PARAMETER
S YMBOL
LIMIT
-70
UNIT
V
Co lle cto r-Ba s e Vo lta g e
Co lle cto r-Em itte r Vo lta g e
Em itte r-Ba s e Vo lta g e
V
V
V
CBO
CEO
EBO
-70
V
-7.5
-3
V
Pe a k Pu ls e Cu rre n t
I
I
I
A
CM
(a )
Co n tin u o u s Co lle cto r Cu rre n t
-2.5
-1000
A
C
B
Ba s e Cu rre n t
m A
(a )
Po w e r Dis s ip a tio n a t TA=25°C
Lin e a r De ra tin g Fa cto r
P
P
P
P
1.5
12
W
m W/ЊC
D
D
D
D
(b )
Po w e r Dis s ip a tio n a t TA=25°C
Lin e a r De ra tin g Fa cto r
2.45
19.6
W
m W/ЊC
(d )
Po w e r Dis s ip a tio n a t TA=25°C
Lin e a r De ra tin g Fa cto r
1
8
W
m W/ЊC
(e )
Po w e r Dis s ip a tio n a t TA=25°C
3
W
Lin e a r De ra tin g Fa cto r
24
m W/ЊC
Op e ra tin g & S to ra g e Te m p e ra tu re Ra n g e
J u n ctio n Te m p e ra tu re
T :T
-55 to +150
150
ЊC
ЊC
j
s tg
T
j
THERMAL RESISTANCE
PARAMETER
S YMBOL
VALUE
83
UNIT
ЊC/W
ЊC/W
ЊC/W
ЊC/W
(a )
J u n ctio n to Am b ie n t
R
R
R
R
⍜J A
⍜J A
⍜J A
⍜J A
(b )
J u n ctio n to Am b ie n t
51
(d )
J u n ctio n to Am b ie n t
125
42
(e )
J u n ctio n to Am b ie n t
NOTES
(a) For a single device surface m ounted on 10 sq cm 1oz copper on FR4 PCB, in still air conditions w ith all exposed pads attached.
(b) For a single device surface m ounted on 10 sq cm 1oz copper on FR4 PCB, in still air conditions m easured at tՅ5 secs w ith all exposed pads
attached.
(c) Repetitive rating - pulse width lim ited by m ax junction tem perature. Refer to Transient Therm al Im pedance graph.
(d) For a single device surface m ounted on 10 sq cm 1oz copper FR4 PCB, in still air conditions w ith m inim al lead connections only.
(e) For a single device surface m ounted on 65 sq cm 2oz copper FR4 PCB, in still air conditions w ith all exposed pads attached.
(f) The m inim um copper dim ensions required for m ounting are no sm aller than the exposed m etal pads on the base of the device, as shown in
the package dim ensions data. The therm al resistance for a device m ounted on 1.5m m thick FR4 board using m inim um copper of 1oz weight and
1m m wide tracks is Rth= 300°C/W giving a power rating of Ptot=420m W
ISSUE 1 - J UNE 2003
2
S E M IC O N D U C T O R S
ZXT4M322
TYPICAL CHARACTERISTICS
ISSUE 1 - J UNE 2003
3
S E M IC O N D U C T O R S
ZXT4M322
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated)
am b
PARAMETER
S YMBOL
MIN.
-70
TYP. MAX. UNIT CONDITIONS
Co lle cto r-Ba s e Bre a kd o w n Vo lta g e
Co lle cto r-Em itte r Bre a kd o w n Vo lta g e
Em itte r-Ba s e Bre a kd o w n Vo lta g e
Co lle cto r Cu t-Off Cu rre n t
V
V
V
-150
-125
-8.5
V
V
I =-100A
C
(BR)CBO
(BR)CEO
(BR)EBO
CBO
-70
I =-10m A*
C
-7.5
V
I =-100A
E
I
I
I
-25
-25
-25
nA
nA
nA
V
V
V
=-55V
=-6V
CB
EB
CE
Em itte r Cu t-Off Cu rre n t
EBO
Co lle cto r Em itte r Cu t-Off Cu rre n t
Co lle cto r-Em itte r S a tu ra tio n Vo lta g e
=-55V
CES
V
-35
-50
m V I =-0.1A, I =-10m A*
C B
CE(s a t)
-135
-140
-175
-200
-220
-260
m V I =-0.5A, I =-20m A*
C B
I =-1A, I =-100m A*
m V
m V
C
B
I =-1.5A, I =-200m A*
C
B
Ba s e -Em itte r S a tu ra tio n Vo lta g e
Ba s e -Em itte r Tu rn -On Vo lta g e
V
V
-0.94 -1.05
-0.78 -1.00
V
V
I =-1.5A, I =-200m A*
C B
BE(s a t)
BE(o n )
FE
I =-1.5A, V =-5V*
C
CE
S ta tic Fo rw a rd Cu rre n t Tra n s fe r Ra tio
h
300
300
175
40
470
450
275
60
I =-10m A, V =-5V*
C CE
I =-100m A, V =-5V*
C
CE
I =-1A, V =-5V*
C
CE
I =-1.5A, V =-5V*
C
CE
I =-3A, V =-5V*
10
C
CE
Tra n s itio n Fre q u e n cy
f
150
180
MHz I =-50m A, V =-10V
T
C
CE
f=100MHz
Ou tp u t Ca p a cita n ce
Tu rn -On Tim e
C
t
14
40
20
pF
ns
ns
V
=-10A, f=1MHz
o b o
CB
V
=-50V, I =-1A
C
=I =-50m A
(o n )
(o ff)
CC
I
B1 B2
Tu rn -Off Tim e
t
700
*Measured under pulsed conditions. Pulse width=300s. Duty cycle Յ 2%
ISSUE 1 - J UNE 2003
4
S E M IC O N D U C T O R S
ZXT4M322
TYPICAL CHARACTERISTICS
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0.6
IC/IB=10
25°C
0.5
0.4
0.3
0.2
0.1
0.0
IC/IB=50
IC/IB=20
IC/IB=10
IC/IB=5
100°C
25°C
-55°C
1m A
10m A
100m A
1A
10A
1m A
10m A
100m A
1A
10A
10A
100
Collector Current
VBE(SAT) vs IC
Collector Current
VCE(SAT) vs IC
1.6
1.4
1.2
1.0
0.8
0.6
0.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
VCE=5V
IC/IB=5
100°C
25°C
-55°C
25°C
450
225
100°C
-55°C
0.2
0.0
1m A
10m A
100m A
1A
10A
1m A
10m A
100m A
1A
Collector Current
hFE(SAT) vs IC
Collector Current
VBE(SAT) vs IC
SINGLE PULSE TEST Tam b = 25 deg C
10
1.0
1.0
VCE=5V
-55°C
25°C
0.8
0.6
0.4
0.2
0.0
D.C.
1s
100m s
100°C
10m s
1m s
100µs
0.1
0.01
0.1
1
10
1m A
10m A
100m A
1A
10A
VCE (VOLTS)
Collector Current
Safe Operating Area
VBE(ON) vs IC
ISSUE 1 - J UNE 2003
5
S E M IC O N D U C T O R S
ZXT4M322
PACKAGE OUTLINE
Controlling dim ensions are in m illim etres. Approxim ate conversions are given in inches
PACKAGE DIMENSIONS
Millim etres
Inches
Min Max
0.0315 0.0393
0.00 0.002
Millim etres
Min Max
0.65 REF
2.00 BSC
Inches
Min Max
DIM
DIM
Min
0.80
0.00
0.65
0.15
0.18
0.17
Max
A
A1
A2
A3
b
1.00
0.05
0.75
0.25
0.28
0.30
e
E
0.0255 REF
0.0787
0.0255 0.0295
0.0059 0.0098
0.0070 0.0110
0.0066 0.0118
0.0787 BSC
E2
E4
L
0.79
0.99
0.68
0.45
0.031
0.039
0.48
0.20
0.0188 0.0267
0.0078 0.0177
0.005 REF
b1
D
L2
r
0.125 MAX.
0.075 BSC
2.00 BSC
0.0029 BSC
D2
D4
1.22
0.56
1.42
0.76
0.0480 0.0559
0.0220 0.0299
⍜
0Њ
12Њ
0Њ
12Њ
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ISSUE 1 - J UNE 2003
6
S E M IC O N D U C T O R S
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