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ZXTD4591E6TA [ZETEX]

DUAL 60V NPN/PNP SILICON MEDIUM POWER TRANSISTORS; 双60V NPN / PNP硅中功率晶体管
ZXTD4591E6TA
型号： ZXTD4591E6TA
厂家： ZETEX SEMICONDUCTORS    ZETEX SEMICONDUCTORS
描述：

DUAL 60V NPN/PNP SILICON MEDIUM POWER TRANSISTORS
双60V NPN / PNP硅中功率晶体管

晶体 晶体管 开关 光电二极管 PC
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ZXTD4591E6  
DUAL 60V NPN/PNP SILICON MEDIUM POWER TRANSISTORS  
SUMMARY  
NPN: VCEO=60V; IC= 1A; hFE=100-300  
PNP: VCEO=-60V; IC= -1A; hFE=100-300  
DESCRIPTION  
Complementary NPN and PNP medium power transistors packaged in the 6  
lead SOT23 package.  
SOT23-6  
FEATURES  
•
•
Low Equivalent On Resistance - NPN RCE(sat) 210mΩ at 1A  
- PNP CE(sat) 355mΩ at -1A  
R
C2  
C1  
Low Saturation Voltage  
B1  
B2  
•
•
•
hFE characterised up to 2A  
IC=1A Continuous Collector Current  
SOT23-6 package  
E1  
E2  
APPLICATIONS  
•
•
•
MOSFET gate driver  
Low Power Motor Drive  
Low Power DC-DC Converters  
C1  
E1  
ORDERING INFORMATION  
B1  
C2  
B2  
E2  
DEVICE  
REEL SIZE  
(inches)  
TAPE WIDTH  
(mm)  
QUANTITY  
PER REEL  
Top View  
ZXTD4591E6TA  
ZXTD4591E6TC  
7
8mm embossed  
8mm embossed  
3000 units  
10000 units  
13  
DEVICE MARKING  
4591  
ISSUE 1 - JULY 2000  
1
ZXTD4591E6  
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
LIMIT NPN  
LIMIT PNP  
UNIT  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Peak Pulse Current  
V
V
V
80  
60  
5
-80  
-60  
-5  
CBO  
CEO  
EBO  
V
V
I
I
I
2
-2  
A
CM  
Continuous Collector Current  
Base Current  
1
-1  
A
C
B
500  
-500  
mA  
Power Dissipation at TA=25°C (a)  
Linear Derating Factor  
P
1.1  
8.8  
1.1  
8.8  
W
mW/°C  
D
Power Dissipation at TA=25°C (b)  
Linear Derating Factor  
P
1.7  
13.6  
1.7  
13.6  
W
mW/°C  
D
Operating and Storage Temperature Range  
T :T  
-55 to +150  
-55 to +150  
°C  
j
stg  
THERMAL RESISTANCE  
PARAMETER  
SYMBOL  
VALUE  
UNIT  
°C/W  
°C/W  
Junction to Ambient (a)  
Junction to Ambient (b)  
R
R
113  
73  
θJA  
θJA  
NOTES  
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,  
in still air conditions  
(b) For a device surface mounted on FR4 PCB measured at tр5 secs.  
ISSUE 1 - JULY 2000  
2
ZXTD4591E6  
PNP TRANSISTOR  
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).  
PARAMETER  
SYMBOL MIN.  
TYP.  
MAX.  
UNIT  
CONDITIONS.  
Collector-Base Breakdown  
Voltage  
V
V
V
-80  
-60  
-5  
V
I =-100␮A  
(BR)CBO  
(BR)CEO  
C
Collector-Emitter Breakdown  
Voltage  
V
I =-10mA*  
C
Emitter-Base Breakdown Voltage  
Collector Cut-Off Current  
V
I =-100␮A  
E
(BR)EBO  
CBO  
I
I
I
-100  
-100  
-100  
nA  
nA  
nA  
V
V
V
=-60V  
=-4V  
CB  
Emitter Cut-Off Current  
EBO  
EB  
Collector Emitter Cut-Off Current  
=-60V  
CES  
CES  
Collector-Emitter Saturation  
Voltage  
V
-0.3  
-0.6  
V
V
I =-500mA, I =-50mA*  
C B  
CE(sat)  
I =-1A, I =-100mA*  
C
B
Base-Emitter Saturation Voltage  
Base-Emitter Turn-On Voltage  
V
V
h
-1.2  
-1.0  
V
V
I =-1A, I =-100mA*  
C B  
BE(sat)  
BE(on)  
FE  
I =-1A, V =-5V*  
C
CE  
Static Forward Current Transfer  
Ratio  
100  
100  
80  
I =-1mA, V =-5V*  
C CE  
300  
I =-500mA, V =-5V*  
C CE  
I =-1A, V =-5V*  
C
CE  
15  
I =-2A, V =-5V*  
C CE  
Transition Frequency  
Output Capacitance  
f
150  
MHz  
pF  
I =-50mA, V =-10V  
T
C
CE  
f=100MHz  
C
10  
V
=-10V, f=1MHz  
CB  
obo  
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%  
ISSUE 1 - JULY 2000  
3
ZXTD4591E6  
NPN  
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).  
PARAMETER  
SYMBOL MIN.  
TYP.  
MAX.  
UNIT  
CONDITIONS.  
Collector-Base Breakdown  
Voltage  
V
V
V
80  
60  
5
V
I =100␮A  
(BR)CBO  
(BR)CEO  
C
Collector-Emitter Breakdown  
Voltage  
V
I =10mA*  
C
Emitter-Base Breakdown Voltage  
Collector Cut-Off Current  
V
I =100␮A  
E
(BR)EBO  
CBO  
I
I
I
100  
100  
100  
nA  
nA  
nA  
V
V
V
=60V  
=4V  
CB  
Emitter Cut-Off Current  
EBO  
EB  
Collector Emitter Cut-Off Current  
=60V  
CES  
CES  
Collector-Emitter Saturation  
Voltage  
V
0.25  
0.5  
V
V
I =500mA, I =50mA*  
C B  
CE(sat)  
I =1A, I =100mA*  
C
B
Base-Emitter Saturation Voltage  
Base-Emitter Turn-On Voltage  
V
V
h
1.1  
1.0  
V
V
I =1A, I =100mA*  
C B  
BE(sat)  
BE(on)  
FE  
I =1A, V =5V*  
C
CE  
Static Forward Current Transfer  
Ratio  
100  
100  
80  
I =1mA, V =5V*  
C CE  
300  
I =500mA, V =5V*  
C CE  
I =1A, V =5V*  
C
CE  
30  
I =2A, V =5V*  
C CE  
Transition Frequency  
Output Capacitance  
f
150  
MHz  
pF  
I =50mA, V =10V  
T
C
CE  
f=100MHz  
C
10  
V
=10V, f=1MHz  
CB  
obo  
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%  
ISSUE 1 - JULY 2000  
4
ZXTD4591E6  
NPN TYPICAL CHARACTERISTICS  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0
0.6  
+25 ° C  
IC/IB=10  
0.5  
0.4  
-55 ° C  
+25 ° C  
+100 ° C  
IC/IB=10  
IC/IB=50  
0.3  
0.2  
0.1  
0
1mA  
10mA  
100mA  
1A  
10A  
10A  
10A  
1mA  
10mA  
100mA  
1A  
10A  
10A  
100  
IC-Collector Current  
IC-Collector Current  
VCE(sat) v IC  
VCE(sat) v IC  
300  
240  
180  
120  
60  
1.4  
VCE=5V  
IC/IB=10  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0
+100 ° C  
+25 ° C  
-55 ° C  
-55 °C  
+25 ° C  
+100 ° C  
0
1mA  
1mA  
10mA  
100mA  
1A  
10mA  
100mA  
1A  
IC-Collector Current  
IC-Collector Current  
VBE(sat) v IC  
hFE V IC  
10  
1
VCE=5V  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0
0.1  
DC  
1s  
100ms  
10ms  
1ms  
-55 ° C  
+25 ° C  
+100 ° C  
0.01  
0.001  
100µs  
1mA  
10mA  
100mA  
1A  
0.1  
1
10  
IC-Collector Current  
VCE - Collector Emitter Voltage (V)  
VBE(on) v IC  
Safe Operating Area  
ISSUE 1 - JULY 2000  
5
ZXTD4591E6  
PNP TYPICAL CHARACTERISTICS  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0
0.6  
+25 ° C  
IC/IB=10  
0.5  
0.4  
0.3  
-55 °C  
+25 °C  
+100 °C  
IC/IB=10  
IC/IB=50  
0.2  
0.1  
0
10mA  
100mA  
1A  
10A  
10A  
10A  
10mA  
100mA  
1A  
10A  
1mA  
1mA  
IC-Collector Current  
IC-Collector Current  
VCE(sat) v IC  
VCE(sat) v IC  
400  
300  
200  
100  
0
VCE=5V  
+100 °C  
IC/IB=10  
1.0  
0.8  
0.6  
0.4  
0.2  
0
+25 °C  
-55 °C  
-55 °C  
+25 °C  
+100 °C  
1mA  
10mA  
100mA  
1A  
10A  
1mA  
10mA  
100mA  
1A  
IC-Collector Current  
IC-Collector Current  
hFE V IC  
VBE(sat) v IC  
10  
1
1.2  
1.0  
0.8  
VCE=5V  
0.6  
0.4  
0.2  
0
DC  
1s  
-55 °C  
+25 °C  
+100 °C  
100ms  
10ms  
1ms  
0.1  
0.01  
100us  
1mA  
10mA  
100mA  
1A  
0.1V  
1V  
10V  
100V  
IC-Collector Current  
VCE - Collector Emitter Voltage (V)  
VBE(on) v IC  
Safe Operating Area  
ISSUE 1 - JULY 2000  
6
ZXTD4591E6  
PACKAGE DIMENSIONS  
PAD LAYOUT DETAILS  
b
e
2
L
E1  
E
DATUM A  
a
e1  
D
A
A2  
A1  
DIM Millimetres  
Inches  
Min  
Min  
Max  
1.45  
0.15  
1.30  
0.50  
0.20  
3.00  
3.00  
1.75  
0.60  
Max  
A
0.90  
0.35  
0.057  
0.006  
0.051  
0.019  
0.008  
0.118  
0.118  
0.069  
0.002  
A1  
A2  
b
0.00  
0
0.90  
0.035  
0.014  
0.0035  
0.110  
0.102  
0.059  
0.004  
0.35  
C
0.09  
D
2.80  
E
2.60  
E1  
L
1.50  
0.10  
e
0.95 REF  
1.90 REF  
0°  
0.037 REF  
0.074 REF  
0°  
e1  
L
10°  
10°  
Zetex plc.  
Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom.  
Telephone: (44)161 622 4422 (Sales), (44)161 622 4444 (General Enquiries)  
Fax: (44)161 622 4420  
Zetex GmbH  
Zetex Inc.  
Zetex (Asia) Ltd.  
These are supported by  
Streitfeldstraße 19  
D-81673 München  
Germany  
Telefon: (49) 89 45 49 49 0  
Fax: (49) 89 45 49 49 49  
47 Mall Drive, Unit 4  
Commack NY 11725  
USA  
Telephone: (631) 543-7100  
Fax: (631) 864-7630  
3701-04 Metroplaza, Tower 1  
Hing Fong Road,  
Kwai Fong, Hong Kong  
Telephone:(852) 26100 611  
Fax: (852) 24250 494  
agents and distributors in  
major countries world-wide  
© Zetex plc 2000  
Internet:http://www.zetex.com  
This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for  
any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves  
the right to alter without notice the specification, design, price or conditions of supply of any product or service.  
ISSUE 1 - JULY 2000  
7

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