ZXTN2007GTA [ZETEX]
30V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223; 30V NPN型中功率低饱和晶体管采用SOT223
| 型号： | ZXTN2007GTA |
| 厂家： | 
ZETEX SEMICONDUCTORS |
| 描述： | 30V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 |
| 文件： | 总6页 (文件大小：122K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ZXTN2007G
30V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223
SUMMARY
BVCEO = 30V : RSAT = 28m ; IC = 7A
DESCRIPTION
Packaged in the SOT223 outline this new low saturation 30V NPN transistor
offers extrem ely low on state losses m aking it ideal for use in DC-DC circuits
and various driving and power m anagem ent functions.
FEATURES
SOT223
• Extem ely low equivalent on-resistance; RSAT = 28m at 6.5A
• 7 am ps continuous current
• Up to 20 am ps peak current
• Very low saturation voltages
• Excellent hFE characteristics up to 20 am ps
APPLICATIONS
• DC - DC converters
• MOSFET gate drivers
• Charging circuits
• Power switches
• Motor control
PINOUT
ORDERING INFORMATION
DEVICE
REEL
SIZE
TAPE
WIDTH
QUANTITY PER
REEL
ZXTN2007GTA
ZXTN2007GTC
7”
1,000 units
4,000 units
12m m
em bossed
13"
TOP VIEW
DEVICE MARKING
ZXTN
2007
ISSUE 1 - J UNE 2005
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S E M IC O N D U C T O R S
ZXTN2007G
ABSOLUTE MAXIMUM RATINGS
PARAMETER
S YMBOL
LIMIT
UNIT
Co lle cto r-b a s e vo lta g e
Co lle cto r-e m itte r vo lta g e
Em itte r-b a s e vo lta g e
BV
BV
BV
80
V
CBO
CEO
EBO
30
V
7
V
A
(a )
Co n tin u o u s co lle cto r cu rre n t
I
7
C
Pe a k p u ls e cu rre n t
(a )
I
20
3.0
A
CM
Po w e r d is s ip a tio n a t T =25°C
A
P
W
D
Lin e a r d e ra tin g fa cto r
24
m W/°C
W
(b )
Po w e r d is s ip a tio n a t T =25°C
A
P
1.6
D
Lin e a r d e ra tin g fa cto r
12.8
m W/°C
°C
Op e ra tin g a n d s to ra g e te m p e ra tu re ra n g e
T , T
-55 to +150
j
s tg
THERMAL RESISTANCE
PARAMETER
S YMBOL
VALUE
42
UNIT
°C/W
°C/W
(a )
J u n ctio n to a m b ie n t
R
R
⍜J A
⍜J A
(b )
J u n ctio n to a m b ie n t
78
NOTES
(a) For a device surface m ounted on 52m m x 52m m x 1.6m m FR4 PCB with high coverage of single sided 2oz copper, in still air conditions.
(b) For a device surface m ounted on 25m m x 25m m x 1.6m m FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
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S E M IC O N D U C T O R S
ZXTN2007G
CHARACTERISTICS
ISSUE 1 - J UNE 2005
3
S E M IC O N D U C T O R S
ZXTN2007G
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated)
am b
PARAMETER
S YMBOL
MIN.
80
80
30
7
TYP. MAX. UNIT CONDITIONS
Co lle cto r-b a s e b re a kd o w n vo lta g e
Co lle cto r-e m itte r b re a kd o w n vo lta g e
Co lle cto r-e m itte r b re a kd o w n vo lta g e
Em itte r-b a s e b re a kd o w n vo lta g e
Co lle cto r cu t-o ff cu rre n t
BV
BV
BV
BV
125
125
40
V
V
I =100A
C
CBO
CER
CEO
EBO
I =1A, RBՅ1k⍀
C
V
I =10m A*
C
8.1
V
I =100A
E
I
20
0.5
20
n A
A
n A
A
n A
V
=70V
CB
CBO
V
=70V, T
=100ЊC
=100ЊC
CB
amb
Co lle cto r cu t-o ff cu rre n t
I
V =70V
CB
CER
RՅ1k⍀
0.5
10
V =70V, T
CB
amb
Em itte r cu t-o ff cu rre n t
I
V
=6V
EBO
EB
Co lle cto r-e m itte r s a tu ra tio n vo lta g e
V
25
35
35
m V I =0.5A, I =20m A*
C B
CE(S AT)
50
m V I =1A, I =100m A*
C B
50
65
m V I =1A, I =20m A*
C B
100
185
125
220
m V I =2A, I =20m A*
C B
m V I =6.5A, I =300m A*
C
B
Ba s e -e m itte r s a tu ra tio n vo lta g e
Ba s e -e m itte r tu rn -o n vo lta g e
V
V
1025 1130
m V I =6.5A, I =300m A*
C B
BE(S AT)
BE(ON)
FE
920
175
200
150
30
1000
m V I =6.5A, V =1V*
C CE
S ta tic fo rw a rd cu rre n t tra n s fe r ra tio
h
100
100
100
20
I =10m A, V =1V*
C CE
300
I =1A, V =1V*
C
CE
I =7A, V =1V*
C
CE
I =20A, V =1V*
C
CE
Tra n s itio n fre q u e n cy
f
140
MHz I =100m A, V =10V
T
C
CE
f=50MHz
Ou tp u t ca p a cita n ce
S w itch in g tim e s
C
48
37
p F
n s
V
=10V, f=1MHz*
OBO
CB
t
t
I =1A, V =10V,
ON
C
CC
425
I
=-I =100m A
B2
OFF
B1
* Measured under pulsed conditions. Pulse width Յ 300s; duty cycle Յ 2%.
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S E M IC O N D U C T O R S
ZXTN2007G
TYPICAL CHARACTERISTICS
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ZXTN2007G
PACKAGE OUTLINE
PAD LAYOUT DETAILS
Controlling dim ensions are in m illim eters. Approxim ate conversions are given in inches
PACKAGE DIMENSIONS
Millim eters
Inches
Millim eters
Min Max
2.30 BSC
4.60 BSC
Inches
Min Max
DIM
DIM
Min
-
Max
Min
Max
0.071
0.004
0.033
0.122
0.013
0.264
A
A1
b
1.80
0.10
0.84
3.10
0.33
6.70
-
e
e1
E
0.0905 BSC
0.181 BSC
0.02
0.66
2.90
0.23
6.30
0.0008
0.026
0.114
0.009
0.248
6.70
7.30
0.264
0.287
b2
C
E1
L
3.30
0.90
-
3.70
0.130
0.355
-
0.146
-
-
-
-
D
-
© Zetex Sem iconductors plc 2005
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S E M IC O N D U C T O R S
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