ZXTP2027F [ZETEX]
60V, SOT23, PNP medium power transistor; 60V ， SOT23 ， PNP中等功率晶体管
| 型号： | ZXTP2027F |
| 厂家： | 
ZETEX SEMICONDUCTORS |
| 描述： | 60V, SOT23, PNP medium power transistor |
| 文件： | 总6页 (文件大小：540K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ZXTP2027F
60V, SOT23, PNP medium power transistor
Summary
V
> -100V, V
> -60V
(BR)CEO
(BR)CEV
I
= -4A
C(cont)
R
= 31 m⍀ typical
CE(sat)
V
< -60 mV @ -1A
CE(sat)
P = 1.2W
D
Complementary part number: ZXTN2018F
Description
Advanced process capability and package design have been used to
maximize the power handling and performance of this small outline
transistor. The compact size and ratings of this device make it ideally suited
to applications where space is at a premium.
Features
•
•
•
•
Higher power dissipation SOT23 package
High peak current
Low saturation voltage
100V forward blocking voltage
Applications
•
•
•
•
MOSFET and IGBT gate driving
Motor drive
Relay, lamp and solenoid drive
High side switches
Pinout - top view
Ordering information
Device
Reel size
(inches)
Tape width
Quantity per reel
ZXTP2027FTA
7
8mm
3,000
Device marking
951
Issue 2 - September 2005
© Zetex Semiconductors plc 2005
1
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ZXTP2027F
Absolute maximum ratings
Parameter
Symbol
Limit
Unit
Collector-base voltage
V
V
V
V
-100
-100
-60
-7
V
CBO
Collector-emitter voltage
Collector-emitter voltage
Emitter-base voltage
Peak pulse current
V
V
(BR)CEV
CEO
V
EBO
I
I
I
-10
-4
A
A
A
W
CM
(b)
C
B
Continuous collector current
Base current
-1
o
(a)
(b)
(c)
P
P
P
1.0
8.0
Power dissipation @ T =25 C
Linear derating factor
D
D
D
A
o
mW/ C
o
1.2
9.6
W
Power dissipation @ T =25 C
Linear derating factor
A
o
mW/ C
o
1.56
12.5
W
Power dissipation @ T =25 C
Linear derating factor
A
o
mW/ C
o
Operating and storage temperature
T :T
-55 to +150
j
stg
C
Thermal resistance
Parameter
Symbol
Value
Unit
(a)
o
Rθ
125
JA
Junction to ambient
C/W
(b)
o
Rθ
104
80
JA
Junction to ambient
C/W
(c)
o
Rθ
JA
Junction to ambient
C/W
NOTES:
(a) Mounted on 18mm x 18mm x 1.6mm FR4 PCB with a very high coverage of 2 oz weight copper in still air conditions.
(b)Mounted on 30mm x 30mm x 1.6mm FR4 PCB with a very high coverage of 2 oz weight copper in still air conditions.
(c) As (b) above measured at t<5secs.
Issue 2 - September 2005
© Zetex Semiconductors plc 2005
2
www.zetex.com
ZXTP2027F
Characteristics
Issue 2 - September 2005
© Zetex Semiconductors plc 2005
3
www.zetex.com
ZXTP2027F
Electrical characteristics (at T
= 25°C unless otherwise stated)
amb
Parameter
Symbol
Min. Typ. Max. Unit Conditions
Collector-base breakdown
voltage
V
V
V
V
-100 -120
V
I =-100µA
C
(BR)CBO
(BR)CEV
(BR)CEO
(BR)EBO
Collector-emitter breakdown
voltage
-100 -120
V
I =
−1µA, 1V> V >-0.3V
C
BE
(a)
Collector-emitter breakdown
voltage
-60
-75
V
I =-10mA
C
Emitter-base breakdown
voltage
-7.0
-8.2
V
I =-100µA
E
Collector-emitter cut-off
current
I
-20
nA
V
V
=-80V,
= 1V
CEV
CE
BE
Collector-base cut-off current
Emitter-base cut-off current
I
I
-20
-10
nA
nA
V
V
=-80V
CBO
CB
EB
=-6V
EBO
(a)
(a)
Static forward current transfer
ratio
H
100
100
80
250
200
145
40
FE
I =-10mA, V =-2V
C
CE
(a)
300
I =-2A, V =-2V
C
CE
(a)
Ic=-4A, V =-2V
CE
(a)
20
Ic=-10A, V =-2V
CE
Collector-emitter saturation
voltage
V
-15
-45
-70
-25
-60
-95
mV
mV
mV
mV
CE(SAT)
I =-100mA, I =-10mA
C
B
(a)
(a)
(a)
I =-1A, I =-100mA
C
B
I =-2A, I =-200mA
C
B
-155 -240
-0.89 -1.0
I =-4A, I =-200mA
C
B
(a)
Base-Emitter saturation
voltage
V
V
V
BE(SAT)
BE(on)
I =-4A, I =-200mA
C B
(a)
Base-Emitter turn-on voltage
-0.81 -0.95
165
V
I =-4A, V =-2V
C
CE
Transition frequency
f
MHz Ic=-100mA, V =-10V,
T
CE
f=50MHz
Output capacitance
Turn–on time
C
44
32
pF
ns
ns
V
V
=-10V, f=1MHz
obo
(on)
(off)
CB
CC
t
t
=-10V, I =-2A,
C
Turn-off time
305
I =I =-200mA
B1 B2
NOTES:
(a) Measured under pulsed conditions. Pulse width=300S. Duty cycle Յ2%.
Issue 2 - September 2005
© Zetex Semiconductors plc 2005
4
www.zetex.com
ZXTP2027F
Typical characteristics
Issue 2 - September 2005
© Zetex Semiconductors plc 2005
5
www.zetex.com
ZXTP2027F
Packaging details - SOT23
L
H
G
N
D
3 leads
A
M
B
C
K
F
Dim.
Millimeters
Inches
Dim.
Millimeters
Inches
Min.
2.67
1.20
-
Max.
3.05
1.40
1.10
0.53
0.15
Min.
0.105
0.047
-
Max.
0.120
0.055
0.043
0.021
0.0059
Min.
Max.
0.51
0.10
2.50
0.64
Max.
0.013
0.0004
0.083
0.018
Max.
0.020
0.004
0.0985
0.025
A
B
C
D
F
H
K
L
0.33
0.01
2.10
0.45
0.37
0.085
0.015
0.0034
M
N
-
0.95 NOM
0.0375 NOM
G
1.90 NOM
0.075 NOM
-
-
-
-
Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inche
Europe
Americas
Asia Pacific
Corporate Headquarters
Zetex GmbH
Zetex Inc
Zetex (Asia Ltd)
Zetex Semiconductors plc
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Streitfeldstraße 19
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Germany
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Telephone: (1) 631 360 2222
Fax: (1) 631 360 8222
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Telephone: (852) 26100 611
Fax: (852) 24250 494
asia.sales@zetex.com
Telephone (44) 161 622 4444
Fax: (44) 161 622 4446
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These offices are supported by agents and distributors in major countries world-wide.
This publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or
reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned.
The company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
Issue 2 - September 2005
© Zetex Semiconductors plc 2005
6
www.zetex.com
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