BAW56GH [ZOWIE]
Monolithic Dual Switching Diode Common Anode Lead free product Halogen-free type; 单片双开关二极管共阳极无铅产品的无卤型![BAW56GH](http://pdffile.icpdf.com/pdf1/p00138/img/icpdf/BAW56_760505_icpdf.jpg)
型号: | BAW56GH |
厂家: | ![]() |
描述: | Monolithic Dual Switching Diode Common Anode Lead free product Halogen-free type |
文件: | 总3页 (文件大小:159K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
![](http://public.icpdf.com/style/img/ads.jpg)
Zowie Technology Corporation
Monolithic Dual Switching Diode
Common Anode
Lead free product
Halogen-free type
3
CATHODE
1
ANODE
3
1
2
BAW56GH
2
CATHODE
SOT-23
MAXIMUM RATINGS
Rating
Symbol
Value
70
Unit
Vdc
Reverse Voltage
VR
Forward Current
I
F
200
500
mAdc
mAdc
Peak Forward Surge Current
I
FM(surge)
THERMAL CHARACTERISTICS
Max.
225
556
Symbol
Unit
mW
Characteristic
Total Device Dissipation FR-5 Board(1)
TA
=25oC
Erate above 25oC
P
D
Thermal Resistance, Junction to Ambient
Total Device Dissipation Alumina Substrate,(2)
R
JA
oC / W
TA
=25oC
300
2.4
mW
Derate above 25oC
P
D
mW / oC
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
R
JA
STG
417
oC / W
oC
TJ,T
-55 to +150
ELECTRICAL CHARACTERISTICS (TA
=25oC unless otherwise noted) (EACH DIODE)
Max.
Symbol
Min.
Unit
Vdc
Characteristic
OFF CHARACTERISTICS
Reverse Breakdown Voltage
( I(BR) = 100uAdc )
V
(BR)
R
70
-
Reverse Voltage Leakage Current
( V
( V
( V
R
R
R
=25Vdc, T
=70Vdc )
=70Vdc, T
J
=150oC )
=150oC )
-
-
-
30
2.5
50
I
uAdc
pF
J
Diode Capacitance
( V =0, f = 1.0 MHZ )
C
D
F
-
2.0
R
Forward Voltage
( I
( I
( I
( I
F
F
F
F
= 1.0 mAdc )
= 10 mAdc )
= 50 mAdc )
= 150 mAdc )
-
-
-
-
715
855
1000
1250
V
mVdc
nS
Reverse Recovery Time
( I = IR = 10 mAdc, IR(REC) = 1.0 mAdc ) ( Figure 1 ) RL = 100
trr
-
6.0
F
x
x
(1) FR-5=1.0 0.75 0.062 in.
x
x
(2) Alumina = 0.4 0.3 0.024in. 99.5% alumina.
REV. 0
Zowie Technology Corporation
Zowie Technology Corporation
BAW56GH
FIGURE 1. RECOVERY TIME EQUIVALENT TEST CIRCUIT
820
+10 V
2 k
0.1uF
I
F
t
t
T
r
p
IF
100uH
t
t
10%
90%
rr
0.1uF
D.U.T.
50 OUTPUT
PULSE
GENERATOR
50 INPUT
SAMPLING
OSCILLOSCOPE
I
= 1mA
R(REC)
I
R
V
R
OUTPUT PULSE
(I = I = 10 mA; measured
INPUT SIGNAL
F
R
at I
= 1mA
R(REC)
Notes: 1. A 2.0k variable resistor adjusted for a Forward Current (I ) of 10mA.
F
2. Input pulse is adjusted so I
is equal to 10mA.
R(peak)
3. t » t
rr
p
FIGURE 2. FORWARD VOLTAGE
FIGURE 3. LEAKAGE CURRENT
10
1.0
100
10
T =150oC
A
T =125oC
A
T =85oC
A
T = -40oC
A
T =85oC
A
0.1
T =25oC
A
T =55oC
A
1.0
0.01
0.001
T =25oC
A
0.1
0.2
10
30
40
50
0.4
0.6
0.8
1.0
1.2
0
20
V , FORWARD VOLTAGE ( VOLTS )
F
V
, REVERSE VOLTAGE ( VOLTS )
R
FIGURE 4. CAPACITANCE
1.75
1.5
1.25
1.0
0.75
0
2
4
6
8
V
, REVERSE VOLTAGE ( VOLTS )
R
REV. 0
Zowie Technology Corporation
Zowie Technology Corporation
CASE DRAWINGS
SOT-23
Unit : mm
+0.02
-0.11
1.0
3
1.30 ± 0.10
1
2
+0.10
-0.05
0.50
1.90 ± 0.15
2.95 ± 0.15
+0.10
-0.05
0.50
1.00 ± 0.11
+0.05
0.05
0.40 ± 0.05
-0.04
REV. 0
Zowie Technology Corporation
相关型号:
![](http://pdffile.icpdf.com/pdf2/p00315/img/page/BAW56L_1895024_files/BAW56L_1895024_1.jpg)
BAW56L
DIODE 2 ELEMENT, SILICON, SIGNAL DIODE, TO-236AB, MICRO MINIATURE PACKAGE-3, Signal Diode
VISHAY
![](http://pdffile.icpdf.com/pdf2/p00293/img/page/BAW56L-AE3-R_1774370_files/BAW56L-AE3-R_1774370_1.jpg)
![](http://pdffile.icpdf.com/pdf2/p00293/img/page/BAW56L-AE3-R_1774370_files/BAW56L-AE3-R_1774370_2.jpg)
BAW56L-AE3-R
Rectifier Diode, 2 Element, 0.075A, 75V V(RRM), Silicon, TO-236, LEAD FREE PACKAGE-3
UTC
©2020 ICPDF网 联系我们和版权申明