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BC848B [ZOWIE]

GENERAL PURPOSE TRANSISTOR NPN SILICON; 通用晶体管NPN硅
BC848B
型号： BC848B
厂家： ZOWIE TECHNOLOGY CORPORATION    ZOWIE TECHNOLOGY CORPORATION
描述：

GENERAL PURPOSE TRANSISTOR NPN SILICON
通用晶体管NPN硅

晶体 晶体管
文件： 总4页 (文件大小：82K)
中文：  中文翻译
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Zowie Technology Corporation  
General Purpose Transistor  
NPN Silicon  
COLLECTOR  
3
3
BASE  
1
1
BC848A,B,C  
2
2
EMITTER  
SOT-23  
MAXIMUM RATINGS  
Value  
Symbol  
VCEO  
VCBO  
VEBO  
IC  
Unit  
Vdc  
Rating  
Collector-Emitter Voltage  
Collector-Base Voltage  
30  
30  
Vdc  
Emitter-Base Voltage  
5.0  
100  
Vdc  
Collector Current-Continuous  
mAdc  
THERMAL CHARACTERISTICS  
Max.  
Symbol  
PD  
Unit  
Characteristic  
Total Device Dissipation FR-5 Board(1) TA=25oC  
225  
1.8  
mW  
Derate above 25oC  
mW / oC  
Thermal Resistance Junction to Ambient  
R
JA  
556  
oC / W  
Total Device Dissipation Alumina Substrate,(2) TA=25oC  
300  
2.4  
mW  
Derate above 25oC  
PD  
mW / oC  
Thermal Resistance Junction to Ambient  
Junction and Storage Temperature  
R
JA  
417  
oC / W  
oC  
TJ,TSTG  
-55 to +150  
DEVICE MARKING  
BC848A=1J; BC848B=1K; BC848C=1L  
ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted)  
Typ.  
Max.  
Symbol  
Min.  
Unit  
Characteristic  
OFF CHARACTERISTICS  
Collector-Emitter Breakdowe Voltage  
( IC=10mA )  
V(BR)CEO  
V(BR)CES  
30  
30  
-
-
-
-
Vdc  
Vdc  
Collector-Emitter Breakdowe Voltage  
( IC=10 uA, VEB=0 )  
Collector-Base Breakdowe Voltage  
( IC=10 uA )  
V(BR)CBO  
V(BR)EBO  
30  
-
-
-
-
Vdc  
Vdc  
Emitter-Base Breakdowe Voltage  
( IE=1.0 uA )  
5.0  
Collector Cutoff Current  
( VCB=30 V )  
( VCB=30 V, TA = 150oC )  
ICBO  
-
-
-
-
15  
5.0  
nAdc  
uAdc  
x
x
(1) FR-5=1.0 0.75 0.062in.  
x
x
(2) Alumina=0.4 0.3 0.024in. 99.5% alumina.  
REV. : 0  
Zowie Technology Corporation  
Zowie Technology Corporation  
ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted) (Continued)  
Typ.  
Max.  
Symbol  
Min.  
Unit  
Characteristic  
ON CHARACTERISTICS  
DC Current Gain  
( IC= 10 uA, VCE= 5.0 V )  
BC848A  
BC848B  
BC848C  
BC848A  
BC848B  
BC848C  
-
-
-
90  
-
-
-
150  
270  
180  
290  
520  
HFE  
-
( IC= 2.0 mA, VCE= 5.0 V )  
110  
200  
420  
220  
450  
800  
Collector-Emitter Saturation Voltage  
( IC= 10 mA, IB= 0.5 mA )  
VCE(sat)  
VBE(sat)  
VBE(on)  
V
V
-
-
-
-
0.25  
0.60  
( IC= 100 mA, IB= 5.0 mA )  
Base-Emitter Saturation Voltage  
( IC= 10 mA, IB= 0.5 mA )  
-
-
0.7  
0.9  
-
-
( IC= 100 mA, IB= 5.0 mA )  
Base-Emitter Voltage  
mV  
( IC= 2.0 mA, VCE= 5.0 V )  
( IC= 10 mA, VCE= 5.0 V )  
580  
-
660  
-
700  
770  
SMALL-SIGNAL CHARACTERISTIC  
Current-Gain-Bandwidth Product  
fT  
100  
-
-
MHZ  
( IC= 10 mA, VCE= 5.0 V, f=100 MHZ )  
Output Capacitance  
Cobo  
NF  
-
-
-
-
4.5  
10  
pF  
dB  
( VCB= 10 V, f=1.0 MHZ )  
Noise Figure  
( VCE= 5.0 Vdc, IC= 0.2 mA, RS= 2.0k ohms, f=1.0 kHZ, BW = 200HZ)  
REV. : 0  
Zowie Technology Corporation  
Zowie Technology Corporation  
BC847A,B,C  
2.0  
1.0  
0.9  
TA= 25oC  
1.5  
VCE = 10 V  
TA= 25oC  
0.8  
0.7  
VBE(SAT) @ IC/IB = 10  
1.0  
0.8  
VBE(on) @ VCE = 10 V  
0.6  
0.5  
0.4  
0.6  
0.4  
0.3  
0.3  
0.2  
0.1  
VCE(SAT) @ IC/IB = 10  
0.2  
0.2  
0
0.5  
1.0  
2.0  
5.0 10  
20  
50 100 200  
0.1  
0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.010  
20 30 50 70100  
I , COLLECTOR CURRENT ( mA )  
C
I , COLLECTOR CURRENT ( mA )  
C
Figure 2. "Saturation" and "On" Voltage  
Figure 1. Normalized DC Current Gain  
2.0  
1.6  
1.2  
0.8  
0.4  
0
1.0  
1.2  
1.6  
2.0  
2.4  
2.8  
TA= 25oC  
-55oC to +125oC  
0.02  
0.1  
1.0  
10 20  
0.2  
1.0  
10  
100  
I , BASE CURRENT ( mA )  
B
I , COLLECTOR CURRENT ( mA )  
C
Figure 3. Collector Saturation Region  
Figure 4. Base-Emitter Temperature Coefficient  
10  
400  
300  
VCE = 10 V  
TA= 25oC  
TA= 25oC  
7.0  
5.0  
200  
C
ib  
C
100  
80  
3.0  
2.0  
ob  
60  
40  
30  
1.0  
20  
0.5  
0.4 0.6 0.8 1.0  
2.0  
4.0 6.0 8.0 10  
20  
40  
0.7 1.0  
2.0  
3.0  
5.0 7.0  
10  
20  
30  
50  
V , REVERSE VOLTAGE ( VOLTS )  
R
I , COLLECTOR CURRENT ( mA )  
C
Figure 5. Capacitances  
Figure 6. Current-Gain-Bandwidth Product  
REV. : 0  
Zowie Technology Corporation  
Zowie Technology Corporation  
BC847A,B,C  
1.0  
0.8  
TA= 25oC  
VCE = 10 V  
TA= 25oC  
VBE(SAT) @ IC/IB = 10  
VBE @ VCE = 5.0 V  
2.0  
0.6  
0.4  
0.2  
0
1.0  
0.5  
0.2  
VCE(SAT) @ IC/IB = 10  
0.1 0.2  
1.0  
10  
100  
0.2  
0.5  
1.0  
2.0  
5.0  
10  
20  
50 100 200  
I , COLLECTOR CURRENT ( mA )  
C
I , COLLECTOR CURRENT ( mA )  
C
Figure 8. "On" Voltage  
Figure 7. DC Current Gain  
2.0  
1.6  
1.2  
0.8  
0.4  
0
-1.0  
-1.4  
TA= 25oC  
-55oC to +125oC  
-1.8  
-2.2  
VB for VBE  
-2.6  
-3.0  
0.02 0.05 0.1  
0.2  
0.5  
1.0 2.0  
5.0  
10  
20  
10  
200  
0.2  
1.0  
I , BASE CURRENT ( mA )  
B
I , COLLECTOR CURRENT ( mA )  
C
Figure 9. Collector Saturation Region  
Figure 10. Base-Emitter Temperature Coefficient  
REV. : 0  
Zowie Technology Corporation  

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