CSCD34H [ZOWIE]
Schottky Barrier Diode; 肖特基二极管
| 型号： | CSCD34H |
| 厂家： | 
ZOWIE TECHNOLOGY CORPORATION |
| 描述： | Schottky Barrier Diode |
| 文件： | 总2页 (文件大小：72K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ZOWIE
Schottky Barrier Diode
(20V~100V / 3.0A)
CSCD32H THRU CSCD310H
FEATURES
OUTLINE DIMENSIONS
*
*
*
*
*
*
*
Halogen-free type
Case : 3220
Unit : mm
Lead free product , compliance to RoHs
Lead less chip form , no lead damage
Lead-free solder joint , no wire bond & lead frame
Low power loss , High efficiency
0.05 ± 0.005
8.0 ± 0.1
High current capability , low VF
0.02
Plastic package has Underwriters Laboratory Flammability
Classification 94V-0
±
8
R0.
APPLICATION
1.95 ± 0.1
1.95 ± 0.1
*
*
*
*
*
Switching mode power supply applications
Portable equipment battery applications
High frequency rectification
DC / DC Converter
Telecommunication
JEDEC : DO-214AB
MARKING
MECHANICAL DATA
Case : Packed with FRP substrate and epoxy underfilled
Terminals : Pure Tin plated (Lead-Free),
solderable per MIL-STD-750, Method 2026.
Polarity : Laser Cathode band marking
Weight : 0.093 gram
Cathode mark
Series code
CSCD
3
.
Halogen-free type
Voltage class
Amps class
PACKING
*
*
*
3,000 pieces per 13" (330mm ± 2mm) reel
1 reels per box
5 boxes per carton
Absolute Maximum Ratings (Ta = 25 oC)
ITEM
CSCD
36H
60
Symbol
Conditions
Unit
32H
20
34H
310H
Repetitive peak reverse voltage
VRRM
IF(AV)
40
100
V
A
Average forward current (SEE FIG.1)
3.0
Peak forward surge current
IFSM
Tj
8.3ms single half sine-wave
100
A
oC
oC
Operating junction temperature Range
Storage temperature Range
-55 to +125
-55 to +150
TSTG
-55 to +150
Electrical characteristics (Ta = 25 oC)
ITEM
Symbol
Conditions
Type
Min.
Typ.
Max.
Unit
IF = 0.5A
IF = 1.0A
IF = 3.0A
-
-
-
0.33
0.38
0.47
-
-
CSCD32H
/
CSCD34H
V
0.50
IF = 0.5A
IF = 1.0A
IF = 3.0A
-
-
-
0.38
0.48
0.65
-
-
CSCD36H
V
V
Forward voltage (NOTE 1)
VF
0.70
IF = 0.5A
IF = 1.0A
IF = 3.0A
-
-
-
0.48
0.58
0.78
-
-
CSCD310H
0.85
Repetitive peak reverse current
Junction capacitance
IRRM
Cj
VR = Max. VRRM , Ta = 25 oC
-
-
-
-
0.025
180
55
0.50
mA
pF
VR = 4V, f = 1.0 MHz
-
-
-
Rth(JA)
Rth(JL)
Junction to ambient (NOTE 2)
Junction to lead (NOTE 2)
oC/W
oC/W
Thermal resistance
17
NOTES : (1) Pulse test width PW=300usec , 1% duty cycle.
(2) Mounted on P.C. board with 0.2 x 0.2"(5.0 x5.0mm) copper pad areas.
(3) Preliminary draft.
REV. 1
2007/10
ZOWIE
CSCD32H THRU CSCD310H
(20V~100V/3.0A)
FIG.1 - FORWARD CURRENT DERATING CURVE
FIG.2 - MAXIMUM NON-REPETITIVE
PEAK FORWARD SURGE CURRENT
3.0
2.0
120
8.3ms Single Half Sine-Wave
(JEDEC Method)
100
80
60
40
1.0
RESISTIVE OR
INDUCTIVE LOAD
P.C.B. MOUNTED ON
0.2X0.2"(5.0X5.0mm)
COPPER PAD AREAS
20
0
0
1
10
NUMBER OF CYCLES AT 60Hz
100
0
50
70
90
110
130
150
170
LEAD TEMPERATURE, o
C
FIG.3 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
100
10.00
10
1.0
1.00
TJ=100oC
0.10
0.10
0.01
TJ=25oC
0.01
.001
CSCD032H & CSCD034H
CSCD036H
CSCD0310H
0
0.2
0.4
0.6
0.8
1.0
1.2
0
20
40
60
80
100
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
PERCENT OF RATED PEAK REVERSE VOLTAGE,%
FIG.5 - TYPICAL JUNCTION CAPACITANCE
400
100
TJ = 25oC
f=1.0MHz
Vsig=50mVP-P
10
.1
1.0
10
100
REVERSE VOLTAGE, VOLTS
REV. 1
2007/10
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