EGC10GH [ZOWIE]
High Efficient Rectifier; 高效整流器
| 型号： | EGC10GH |
| 厂家： | 
ZOWIE TECHNOLOGY CORPORATION |
| 描述： | High Efficient Rectifier |
| 文件： | 总2页 (文件大小：45K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ZOWIE
High Efficient Rectifier
(200V~1000V / 1.0A)
EGC10DH THRU EGC10MH
FEATURES
OUTLINE DIMENSIONS
*
*
*
*
*
*
*
*
Halogen-free type
Case : 2010
Unit : mm
Lead free product, compliance to RoHS
GPRC (Glass passivated rectifier chip) inside
Glass passivated cavity-free junction
Lead less chip form, no lead damage
Low power loss , High efficiency
High current capability
4.5 ± 0.1
0.05
Plastic package has Underwriters Laboratory Flammability
Classification 94V-0
0.95 ± 0.2
0.95 ± 0.2
APPLICATION
*
*
General purpose rectification
Surge absorption
JEDEC : SMA
DO-214AC
MECHANICAL DATA
Case : Packed with FRP substrate and epoxy underfilled
Terminals : Pure Tin plated (Lead-Free),
solderable per MIL-STD-750, Method 2026.
Polarity : Cathode Band, Laser marking
Weight : 0.02 gram
MARKING
Series code
Cathode mark
EGC
10D
.
Halogen-free type
Amps class
Voltage class
PACKING
Voltage class: D = 200V, G = 400V
J = 600V, K = 800V, M = 1000V
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3,000 pieces per 7" (178mm ± 2mm) reel
4 reels per box
6 boxes per carton
Absolute Maximum Ratings (Ta = 25 oC)
ITEM
EGC10
JH
Symbol
Conditions
Unit
DH
GH
KH
MH
Repetitive peak reverse voltage
Average forward current
VRRM
IF(AV)
200
400
600
800
1000
V
A
1.0
Peak forward surge current
Reverse recovery time
IFSM
Trr
8.3ms single half sine-wave
30
50
25
75
A
I
F = 0.5A, IR = 1.0A, Irr = 0.25A
nS
oC
Operating storage temperature Range
Tj,TSTG
-65 to +175
ITEM
Symbol
Conditions
Type
Min.
Typ.
Max.
Unit
-
-
-
-
-
0.95
1.05
1.45
1.45
1.45
1.00
1.25
1.70
1.70
1.70
EGC10DH
EGC10GH
EGC10JH
EGC10KH
EGC10MH
Forward voltage
VF
IF = 1.0A
V
Repetitive peak reverse current
Junction capacitance
IRRM
Cj
VR = Max. VRRM , Ta = 25 oC
VR = 4V, f = 1.0 MHz
-
-
0.10
9
5
-
uA
pF
Rth(JA)
Rth(JL)
Junction to ambient (NOTE)
Junction to lead (NOTE)
-
-
65
14
-
-
oC/W
Thermal resistance
NOTES : Thermal resistance from junction to ambient and from junction to lead P.C.B. mounted on 0.2 x 0.2" (5.0 x 5.0mm) copper pad areas.
REV. 0
2009/10
ZOWIE
EGC10DH THUR EGC10MH
(200V~1000V / 1.0 A)
FIG.1 - TYPICAL FORWARD CURRENT DERATING CURVE
1.0
FIG.2 - MAXIMUM NON-REPETITIVE
PEAK FORWARD SURGE CURRENT
30
8.3ms SINGLE HALF SINE-WAVE
RESISTIVE OR
INDUCTIVE LOAD
25
20
EGC10DH & EGC10GH
EGC10JH ~ EGC10MH
0.5
15
10
5
0
0
1
10
100
0
25
50
75
100
125
150
175
LEAD TEMPERATURE, o
C
NUMBER OF CYCLES AT 60Hz
FIG.3 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
PER BRIDGE ELEMENT
100
10.0
1.0
10.00
TJ=150oC
TJ=125oC
1.00
0.10
0.01
TJ=25oC
0.10
0.01
TJ=25oC
EGC10DH
EGC10GH
EGC10JH~EGC10MH
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8 2.0
0
20
40
60
80
100
120
140
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
PERCENT OF RATED PEAK REVERSE VOLTAGE,%
FIG.5 - TYPICAL JUNCTION CAPACITANCE
200
100
TJ = 25oC
60
40
20
10
6
4
2
1
.1
.2
.4
1.0
2
4
10
20
40
100
REVERSE VOLTAGE, VOLTS
REV. 0
2009/10
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