EGP10B [ZOWIE]

SINTERED GLASS PASSIVATED JUNCTION HIGH EFFICIENT RECTIFIER; 烧结玻璃钝化结高产高效整流器
EGP10B
型号: EGP10B
厂家: ZOWIE TECHNOLOGY CORPORATION    ZOWIE TECHNOLOGY CORPORATION
描述:

SINTERED GLASS PASSIVATED JUNCTION HIGH EFFICIENT RECTIFIER
烧结玻璃钝化结高产高效整流器

二极管
文件: 总2页 (文件大小:63K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
EGP10A THRU EGP10M  
SINTERED GLASS PASSIVATED JUNCTION HIGH EFFICIENT RECTIFIER  
Reverse Voltage - 50 to 1000 Volts  
Forward Current - 1.0 Ampere  
D
E
T
N
E
T
DO-204AL  
A
P
FEATURES  
* GPRC (Glass Passivated Rectifier Chip) inside  
* Glass passivated cavity-free junction  
* Superfast recovery time for high efficiency  
* Low forward voltage , high current capability  
* Low leakage current  
0.107(2.70)  
0.080(2.00)  
DIA.  
* High surge current capability  
* High temperature soldering guaranteed: 260oC/10 seconds,  
0.375" (9.5mm) lead length, 5lbs. (2.3 kg) tension  
* Plastic package has Underwriters Laboratory Flammability  
Classification 94V-0  
MECHANICAL DATA  
0.034(0.86)  
0.028(0.71)  
DIA.  
Case : JEDEC DO-204AL molded plastic over glass body  
Terminals : Plated axial leads , solderable per MIL-STD-750,  
Method 2026  
*Dimensions in inches and (millimeters)  
Polarity : Color band denotes cathode end  
Mounting Position : Any  
TM  
Weight : 0.012 ounes , 0.3 gram  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25 oC ambient temperature  
EGP10  
SYMBOLS  
UNITS  
A
B
D
F
G
J
K
M
unless otherwise specified.  
Volts  
Volts  
Volts  
Maximum repetitive peak reverse voltage  
VRRM  
VRMS  
VDC  
50  
35  
50  
100  
70  
200  
140  
200  
300  
210  
300  
400  
280  
400  
600  
420  
600  
800  
560  
800  
1000  
700  
Maximum RMS voltage  
100  
1000  
Maximum DC blocking voltage  
Maximum average forward rectified current  
0.375" (9.5mm) lead length (SEE FIG.1)  
I (AV)  
1.0  
Amps  
Peak forward surge current 8.3ms single half sine-wave  
superimposed on rated load (JEDEC Method)  
IFSM  
VF  
30  
25  
Amps  
Volts  
Maximum instantaneous forward voltage at 1.0 A  
1.0  
1.25  
1.7  
TA=25oC  
5
5
50  
-
Maximum DC reverse current  
TA=125oC  
30  
50  
uA  
IR  
TA=150oC  
at rated DC blocking voltage  
Maximum reverse recovery time (NOTE 1)  
Typical junction capacitance (NOTE 2)  
trr  
50  
75  
nS  
pF  
CJ  
15  
50  
Typical thermal resistance (NOTE 3)  
R
JA  
oC / W  
oC  
Operating junction and storage temperature range  
TJ,TSTG  
-65 to +175  
-55 to +150  
NOTES : (1) Reverse recovery test condition : IF 0.5A, IR=1.0A, Irr=0.25A  
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts  
(3) Thermal resistance from junction to ambient at 0.375" (9.5mm) lead lengths, P.C.B. mounted.  
Zowie Technology Corporation  
REV. : 0  
RATINGS AND CHARACTERISTIC CURVES EGP10A THRU EGP10M  
FIG.1 - FORWARD CURRENT DERATING CURVE  
FIG.2 - MAXIMUM NON-REPETITIVE  
PEAK FORWARD SURGE CURRENT  
1.0  
0.5  
30  
25  
20  
15  
10  
5
RESISTIVE OR  
INDUCTIVE LOAD  
TJ=TJ max.  
8.3ms SINGLE HALF SINE-WAVE  
(JEDEC Method)  
EGP10A~EGP10G  
EGP10J~EGP10M  
EGP10A~EGP10G  
EGP10J~EGP10M  
0.375" (9.5mm) LEAD LENGTH  
0
0
1
10  
100  
0
25  
50  
75  
100 125 150 175  
AMBIENT TEMPERATURE, oC  
NUMBER OF CYCLES AT 60Hz  
FIG.3 - TYPICAL INSTANTANEOUS  
FORWARD CHARACTERISTICS  
FIG.4 - TYPICAL REVERSE CHARACTERISTICS  
100  
10.00  
PULSE WIDTH=300uS  
1% DUTY CYCLE  
10  
1.00  
0.10  
1
TJ=125oC  
TJ=150oC  
EGP10J~EGP10M  
EGP10G  
EGP10A~EGP10F  
0.1  
0
20  
40  
60  
80  
100 110  
0.01  
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8  
PERCENT OF RATED PEAK REVERSE VOLTAGE,%  
INSTANTANEOUS FORWARD VOLTAGE,  
VOLTS  
FIG.5 - TYPICAL JUNCTION CAPACITANCE  
FIG.6 - TYPICAL TRANSIENT THERMAL IMPEDANCE  
200  
100  
100  
TJ = 25oC  
60  
40  
10  
1
20  
10  
6
4
2
1
0.1  
.1  
.2  
.4  
1.0  
2
4
10  
20 40  
100  
0.01  
0.10  
1.0  
10  
100  
REVERSE VOLTAGE, VOLTS  
t , PULSE DURATION, sec  
Zowie Technology Corporation  
REV. : 0  

相关型号:

EGP10B-5005/4

Rectifier Diode, 1 Element, 1A, 100V V(RRM), Silicon, DO-204AL
VISHAY

EGP10B-A

Rectifier Diode,
MCC

EGP10B-AP

Rectifier Diode, 1 Element, 1A, 100V V(RRM), Silicon, DO-41, ROHS COMPLIANT, PLASTIC PACKAGE-2
MCC

EGP10B-B

Rectifier Diode,
MCC

EGP10B-BP

暂无描述
MCC

EGP10B-E3

Rectifier Diode, 1 Element, 1A, 100V V(RRM),
VISHAY

EGP10B-E3/23

Rectifier Diode, 1 Element, 1A, 100V V(RRM), Silicon, DO-204AL, ROHS COMPLIANT, PLASTIC, DO-41, 2 PIN
VISHAY

EGP10B-E3/54

DIODE 1A 100V 50NS SMC
VISHAY

EGP10B-HE3

DIODE 1 A, 100 V, SILICON, SIGNAL DIODE, DO-204AL, LEAD FREE, PLASTIC, DO-41, 2 PIN, Signal Diode
VISHAY

EGP10B-HE3/54

DIODE 1 A, 100 V, SILICON, SIGNAL DIODE, DO-204AL, ROHS COMPLIANT, PLASTIC, DO-41, 2 PIN, Signal Diode
VISHAY

EGP10B-TP

Rectifier Diode, 1 Element, 1A, 100V V(RRM), Silicon, DO-41, ROHS COMPLIANT, PLASTIC PACKAGE-2
MCC

EGP10B.TR

Rectifier Diode, 1 Element, 1A, 100V V(RRM), Silicon, DO-41
FAIRCHILD