LL4148 [ZOWIE]
SILICON EPITAXIAL PLANAR DIODES; 硅外延平面二极管
| 型号： | LL4148 |
| 厂家： | 
ZOWIE TECHNOLOGY CORPORATION |
| 描述： | SILICON EPITAXIAL PLANAR DIODES |
| 文件： | 总2页 (文件大小：46K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
LL4148, LL4448
SILICON EPITAXIAL PLANAR DIODES
Reverse Voltage 100 Volts
Peak Forward Current - 500mA
SOD-80
Cathode Indification
FEATURES
0.063(1.60)
0.055(1.40)
* Electrical data identical with the devices 1N4148
* and 1N4448 respectively
0.012(0.30)
* Extreme fast switches
0.146(3.70)
0.130(3.30)
MECHANICAL DATA
Glass case
Mini MELF / SOD 80
JEDEC DO 213AA
technical drawings
accarding to DIN
specifications
Case : Mini MELF SOD-80 Glass Case
Weight : approx. 0.05 gram
*Dimensions in inches and (millimeters)
ABSOLUTE MAXIMUM RATINGS ( T =25oC )
J
SYMBOL
VALUE
100
75
UNIT
V
PARAMETER
Test Conditions
V
RRM
Repetitive Peak Reverse Voltage
Reverse Voltage
V
V
R
tp = 1 us
I
Peak Forward Surge Current
Repetitive Peak Forward Current
Forward Current
2
A
FSM
I
FRM
500
300
150
500
175
mA
mA
mA
mW
I
F
V
R
= 0
Average Forward Current
Power Dissipation
IFAV
PV
oC
oC
T
Junction Temperature
Storage Temperature Range
J
T
STG
-65 to +175
MAXIMUM THERMAL RESISTANCE ( T =25oC )
J
PARAMETER
TEST CONDITIONS
SYMBOL
VALUE
UNIT
on PC Board 50mm x 50mm x 1.6mm
R
Junction Ambient
JA
500
K / W
MAXIMUM THERMAL RESISTANCE ( T =25oC )
J
PARAMETER
TEST CONDITIONS
SYMBOL
MIN.
TYP.
MAX.
UNIT
Volts
nAdc
( I = 5 mA )
( I = 50 mA )
F
( Type : LL4448 )
0.62
-
-
-
0.72
1.0
1.0
F
V
( Type : LL4148 )
( Type : LL4448 )
0.86
0.93
F
Forward Voltage
( I = 100 mA )
F
( V = 20 V )
R
-
-
-
-
-
-
25
50
5.0
( V = 20 V, T =150oC )
I
R
Reverse Current
R
J
( V = 75 V )
R
uAdc
Volts
pF
( I = 100 uA, tp/T = 0.01, tp = 0.3 ms )
V
(BR)
Breakdown Voltage
R
100
-
-
-
-
-
4
-
( V = 0, f=1.0MHz, V = 50mV )
C
D
Diode Capacitance
R
HF
( V = 2 V, f = 100MH
)
Rectification Efficiency
HF
Z
r
45
%
( I = I = 10mA, I = 1mA )
-
-
-
-
8
4
F
R
R
t
Reverse Recovery Time
nS
rr
( I = 10mA, VR = 6 V, I = 0.1 X IR, R = 100
)
F
R
L
Zowie Technology Corporation
REV. : 0
RATINGS AND CHARACTERISTIC CURVES LL4148, LL4448
FIG.1 - FORWARD CURRENT VS. FORWARD VOLTAGE
FIG.2 - FORWARD CURRENT VS. FORWARD VOLTAGE
1000
100
1000
100
LL4448
LL4148
Scattering Limit
Scattering Limit
10
10
TJ = 25oC
1
1
TJ = 25oC
0.1
0.1
0
0.4
0.8
1.2
1.6
2.0
0
0.4
0.8
1.2
1.6
2.0
VF - FORWARD VOLTAGE ( V )
VF - FORWARD VOLTAGE ( V )
FIG.3 - REVERSSE CURRENT VS. REVERSE VOLTAGE
FIG.4 - DIODE CAPACITANCE VS. REVERSE VOLTAGE
3.0
1000
100
10
2.5
2.0
TJ = 25oC
1.5
Scattering Limit
1.0
0.5
0
1
1
0
100
0.1
1
10
100
V
- REVERSE VOLTAGE ( V )
V
- REVERSE VOLTAGE ( V )
R
R
Zowie Technology Corporation
REV. : 0
相关型号：
LL4148-7-F
Rectifier Diode, 1 Element, 0.15A, 75V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, MINIMELF-2
DIODES
LL4148-T1-LF
Rectifier Diode, 1 Element, 0.15A, 75V V(RRM), Silicon, ROHS COMPLIANT, GLASS, MINIMELF-2
WTE
©2020 ICPDF网 联系我们和版权申明