MSCD302H [ZOWIE]

Schottky Barrier Diode;
MSCD302H
型号: MSCD302H
厂家: ZOWIE TECHNOLOGY CORPORATION    ZOWIE TECHNOLOGY CORPORATION
描述:

Schottky Barrier Diode

文件: 总2页 (文件大小:51K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
ZOWIE  
Schottky Barrier Diode  
(20V~60V / 3.0 A)  
MSCD302H THRU MSCD306H  
FEATURES  
OUTLINE DIMENSIONS  
*
*
*
*
*
*
Halogen-free type  
Case : 0805  
Unit : mm  
Compliance to RoHS product  
Lead less chip form, no lead damage  
Low power loss , High efficiency  
High current capability, low VF  
Plastic package has Underwriters Laboratory Flammability  
Classification 94V-0  
2.00 ± 0.10  
Mounting Pad Layout  
1.30  
MAX.  
APPLICATION  
*
*
*
*
*
Switching mode power supply applications  
Portable equipment battery applications  
High frequency rectification  
DC / DC Converter  
0.45 ± 0.10  
0.45 ± 0.10  
0.80  
MIN.  
2.90  
REF.  
Telecommunication  
MECHANICAL DATA  
Equivalent : SOD-323  
Case : Packed with FRP substrate and epoxy underfilled  
Terminals : Pure Tin plated (Lead-Free),  
solderable per MIL-STD-750, Method 2026.  
Polarity : Laser Cathode band marking  
Weight : 0.005 gram  
MARKING  
K
.
2
PACKING  
Voltage class  
Voltage class: 2 = 20V, 4 = 40V, 6 = 60V  
*
*
*
3,000 pieces per 7" (178mm ± 2mm) reel  
5 reels per box  
6 boxes per carton  
Absolute Maximum Ratings (Ta = 25 oC)  
ITEM  
Rating  
Symbol  
Conditions  
Unit  
MSCD302H  
MSCD304H  
MSCD306H  
Repetitive peak reverse voltage  
Average forward current  
VRRM  
IF(AV)  
20  
40  
60  
V
A
3.0  
Peak forward surge current  
IFSM  
Tj  
8.3ms single half sine-wave  
10  
A
oC  
oC  
Operating junction temperature Range  
Storage temperature Range  
-55 to +125  
- 55 to +150  
TSTG  
Electrical characteristics (Ta = 25 oC)  
ITEM  
Symbol  
Conditions  
Type  
Min.  
Typ.  
Max.  
Unit  
MSCD302H  
IF = 1.0 A  
-
0.42  
0.47  
0.62  
0.45  
0.50  
0.65  
MSCD304H  
MSCD306H  
IF = 1.0 A  
IF = 1.0 A  
-
-
Forward voltage (NOTE 1)  
VF  
V
uA  
Repetitive peak reverse current (NOTE 1)  
Junction capacitance  
IRRM  
VR = Max. VRRM , Ta = 25 oC  
-
18  
50  
Cj  
VR = 4V, f = 1.0 MHz  
Junction to ambient  
Junction to lead  
-
-
-
115  
88  
-
-
-
pF  
Rth(JA)  
Rth(JL)  
oC/W  
oC/W  
Thermal resistance  
28  
NOTES : (1) Pulse test width PW=300usec , 1% duty cycle.  
(2) Mounted on P.C. board with 0.2 x 0.2"(5.0 x5.0mm) copper pad areas.  
REV. 3  
2017/12  
ZOWIE  
MSCD302H THRU MSCD306H  
(20V~60V / 3.0 A)  
FIG.1 - FORWARD CURRENT DERATING CURVE  
FIG.2 - MAXIMUM NON-REPETITIVE  
PEAK FORWARD SURGE CURRENT  
3
2
1
12  
10  
8.3ms Single Half Sine-Wave  
RESISTIVE OR  
INDUCTIVE LOAD  
P.C.B. MOUNTED ON  
0.2X0.2"(5.0X5.0mm)  
COPPER PAD AREAS  
8
6
4
2
0
0
0
1
10  
100  
25  
50  
75  
100  
125  
150  
LEAD TEMPERATURE, o  
C
NUMBER OF CYCLES AT 60Hz  
FIG.3 - TYPICAL INSTANTANEOUS  
FORWARD CHARACTERISTICS  
FIG.4 - TYPICAL REVERSE CHARACTERISTICS  
100  
10  
MSCD302H  
MSCD304H  
MSCD306H  
10  
1.0  
1
TJ=80oC  
0.10  
0.10  
TJ=25oC  
0.01  
.001  
0.01  
0.1  
0.2  
0.4  
0.6  
0.8  
1.0  
0
20  
40  
60  
80  
100  
FORWARD VOLTAGE, (V)  
PERCENT OF RATED PEAK REVERSE VOLTAGE,%  
FIG.5 - TYPICAL JUNCTION CAPACITANCE  
400  
TJ=25oC  
f=1.0MHz  
Vsig=50mVP-P  
100  
10  
.1  
1.0  
10  
100  
REVERSE VOLTAGE, VOLTS  
REV. 3  
2017/12  

相关型号:

MSCD304H

Schottky Barrier Diode
ZOWIE

MSCD306H

Schottky Barrier Diode
ZOWIE

MSCD350

Rectifier Diode Modules
ETC

MSCD350-08

Rectifier Diode Modules
ETC

MSCD350-12

Rectifier Diode Modules
ETC

MSCD350-16

Rectifier Diode Modules
ETC

MSCD350-18

Rectifier Diode Modules
ETC

MSCD36-08

Glass Passivated Rectifier Diode Modules
ETC

MSCD36-12

Rectifier Diode, 1 Phase, 2 Element, 36A, 1200V V(RRM), Silicon, CASE D1, 3 PIN
MICROSEMI

MSCD36-16

Glass Passivated Rectifier Diode Modules
ETC

MSCD36-18

Glass Passivated Rectifier Diode Modules
ETC

MSCD36B

Glass Passivated Rectifier Diode Modules
ETC