SCD34H [ZOWIE]
Schottky Barrier Diode; 肖特基二极管
| 型号： | SCD34H |
| 厂家： | 
ZOWIE TECHNOLOGY CORPORATION |
| 描述： | Schottky Barrier Diode |
| 文件： | 总2页 (文件大小：44K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ZOWIE
Schottky Barrier Diode
(20V~100V / 3.0A)
SCD32H THRU SCD310H
FEATURES
OUTLINE DIMENSIONS
*
*
*
*
*
*
*
Halogen - free type
Case : SCD-2010
Unit : mm
Lead free product , compliance to RoHs
Lead less chip form , no lead damage
Lead-free solder joint , no wire bond & lead frame
Low power loss , High efficiency
4.5 ± 0.1
0.05
High current capability , low VF
Plastic package has Underwriters Laboratory Flammability
Classification 94V-0
0.95 ± 0.2
0.95 ± 0.2
APPLICATION
*
*
*
*
*
Switching mode power supply applications
Portable equipment battery applications
High frequency rectification
DC / DC Converter
JEDEC : SMA
DO-214AC
Telecommunication
MARKING
MECHANICAL DATA
Case : Packed with FRP substrate and epoxy underfilled
Terminals : Pure Tin plated (Lead-Free),
solderable per MIL-STD-750, Method 2026.
Polarity : Laser Cathode band marking
Weight : 0.02 gram
Cathode mark
Series code
SCD
3 .
Amps class
Halogen - free type
Voltage
class
PACKING
*
*
*
3,000 pieces per 7" (178mm ± 2mm) reel
4 reels per box
6 boxes per carton
Absolute Maximum Ratings (Ta = 25 oC)
ITEM
Rating
Symbol
Conditions
Unit
SCD32H SCD34H SCD36H SCD310H
20 40 60 100
Repetitive peak reverse voltage
Average forward current
VRRM
IF(AV)
V
A
3.0
80
Peak forward surge current
IFSM
Tj
8.3ms single half sine-wave
A
oC
oC
Operating junction temperature Range
Storage temperature Range
-55 to +125
-55 to +150
TSTG
-55 to +150
Electrical characteristics (Ta = 25 oC)
ITEM
Symbol
Conditions
Type
Min.
Typ.
Max.
Unit
SCD32H
/
SCD34H
IF = 1.0A
IF = 3.0A
-
-
0.37
0.46
-
V
0.50
IF = 1.0A
IF = 3.0A
-
-
0.42
0.58
-
Forward voltage (NOTE 1)
VF
SCD36H
V
0.70
IF = 1.0A
IF = 3.0A
-
-
0.58
0.75
-
SCD310H
V
0.85
Repetitive peak reverse current
Junction capacitance
IRRM
VR = Max. VRRM , Ta = 25 oC
-
0.02
0.20
mA
Cj
VR = 4V, f = 1.0 MHz
-
-
-
120
55
-
-
-
pF
Rth(JA)
Rth(JL)
Junction to ambient (NOTE 2)
Junction to lead (NOTE 2)
oC/W
oC/W
Thermal resistance
17
NOTES : (1) Pulse test width PW=300usec , 1% duty cycle.
(2) Mounted on P.C. board with 0.2 x 0.2"(5.0 x5.0mm) copper pad areas.
REV. 0
2007/12
ZOWIE
SCD32H THRU SCD310H
(20V~100V / 3.0A)
FIG.1 - FORWARD CURRENT DERATING CURVE
FIG.2 - MAXIMUM NON-REPETITIVE
PEAK FORWARD SURGE CURRENT
3.0
2.0
1.0
0
80
RESISTIVE OR
INDUCTIVE LOAD
P.C.B. MOUNTED ON
0.2X0.2"(5.0X5.0mm)
COPPER PAD AREAS
8.3ms Single Half Sine-Wave
(JEDEC Method)
70
60
50
SCD36H & SCD310H
40
30
SCD32H & SCD34H
20
10
0
1
10
100
0
50
70
90
110
130
C
150
170
LEAD TEMPERATURE, o
NUMBER OF CYCLES AT 60Hz
FIG.3 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
100
10
10
1.0
1.00
o
TJ=100 C
0.10
0.01
0.10
o
TJ=25 C
0.01
.001
SCD32H~34H
Ta=25oC
SCD36H
SCD310H
0.001
0
20
40
60
80
100
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
FORWARD VOLTAGE, (V)
PERCENT OF RATED PEAK REVERSE VOLTAGE,%
FIG.5 - TYPICAL JUNCTION CAPACITANCE
400
100
o
TJ = 25 C
f=1.0MHz
Vsig=50mVP-P
10
.1
1.0
10
100
REVERSE VOLTAGE, VOLTS
REV. 0
2007/12
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