概述
数据手册AT49F001N-12TI 概述
1-Megabit 128K x 8 5-volt Only Flash Memory 1兆位128K ×8 5伏只有闪存
AT49F001N-12TI 数据手册
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PDF下载Features
• Single Voltage Operation
– 5V Read
– 5V Reprogramming
• Fast Read Access Time - 55 ns
• Internal Program Control and Timer
• Sector Architecture
– One 16K Byte Boot Block with Programming Lockout
– Two 8K Byte Parameter Blocks
– Two Main Memory Blocks (32K, 64K) Bytes
• Fast Erase Cycle Time - 10 seconds
• Byte By Byte Programming - 10 µs/Byte Typical
• Hardware Data Protection
1-Megabit
(128K x 8)
• DATA Polling for End of Program Detection
• Low Power Dissipation
5-volt Only
Flash Memory
– 50 mA Active Current
– 100 µA CMOS Standby Current
• Typical 10,000 Write Cycles
Description
The AT49F001(N)(T) is a 5-volt-only in-system reprogrammable Flash Memory. Its 1
megabit of memory is organized as 131,072 words by 8 bits. Manufactured with
Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 55
ns with power dissipation of just 275 mW over the commercial temperature range.
AT49F001
AT49F001N
AT49F001T
AT49F001NT
(continued)
DIP Top View
Pin Configurations
Pin Name
A0 - A16
CE
Function
* RESET
A16
A15
A12
A7
1
2
3
4
5
6
7
8
9
32 VCC
31 WE
30 NC
29 A14
28 A13
27 A8
Addresses
Chip Enable
Output Enable
Write Enable
RESET
A6
A5
26 A9
OE
A4
25 A11
24 OE
23 A10
22 CE
21 I/O7
20 I/O6
19 I/O5
18 I/O4
17 I/O3
A3
WE
A2 10
A1 11
A0 12
RESET
I/O0 - I/O7
NC
I/O0 13
I/O1 14
I/O2 15
GND 16
Data Inputs/Outputs
No Connect
Don’t Connect
DC
VSOP Top View (8 x 14 mm) or
TSOP Top View (8 x 20 mm)
Type 1
PLCC Top View
A11
A9
1
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
OE
2
A10
CE
A8
3
A7
A6
A5
A4
A3
5
6
7
8
9
29 A14
28 A13
27 A8
26 A9
25 A11
24 OE
23 A10
22 CE
21 I/O7
A13
A14
NC
4
I/O7
I/O6
I/O5
I/O4
I/O3
GND
I/O2
I/O1
I/O0
A0
5
6
WE
7
VCC
* RESET
A16
A15
A12
A7
8
9
A2 10
A1 11
A0 12
I/O0 13
10
11
12
13
14
15
16
A6
A1
A5
A2
Rev. 1008B–07/98
A4
A3
*Note: This pin is a DC on the AT49F001N(T).
When the device is deselected, the CMOS standby current
is less than 100 µA. For the AT49F001NT pin 1 for the DIP
and PLCC packages and pin 9 for the TSOP package are
don’t connect pins.
The device is erased by executing the erase command
sequence; the device internally controls the erase opera-
tions. There are two 8K byte parameter block sections and
two main memory blocks.
To allow for simple in-system reprogrammability, the
AT49F001(N)(T) does not require high input voltages for
programming. Five-volt-only commands determine the read
and programming operation of the device. Reading data
out of the device is similar to reading from an EPROM; it
has standard CE, OE, and WE inputs to avoid bus conten-
tion. Reprogramming the AT49F001(N)(T) is performed by
erasing a block of data and then programming on a byte by
byte basis. The byte programming time is a fast 50 µs. The
end of a program cycle can be optionally detected by the
DATA polling feature. Once the end of a byte program
cycle has been detected, a new access for a read or pro-
gram can begin. The typical number of program and erase
cycles is in excess of 10,000 cycles.
The device has the capability to protect the data in the boot
block; this feature is enabled by a command sequence.
The 16K-byte boot block section includes a reprogramming
lock out feature to provide data integrity. The boot sector is
designed to contain user secure code, and when the fea-
ture is enabled, the boot sector is protected from being
reprogrammed.
In the AT49F001N(T), once the boot block programming
lockout feature is enabled, the contents of the boot block
are permanent and cannot be changed. In the
AT49F001(T), once the boot block programming lockout
feature is enabled, the contents of the boot block cannot be
changed with input voltage levels of 5.5 volts or less.
Block Diagram
AT49F001(N)
AT49F001(N)T
DATA INPUTS/OUTPUTS
I/O7 - I/O0
DATA INPUTS/OUTPUTS
I/O7 - I/O0
V
CC
8
8
GND
INPUT/OUTPUT
BUFFERS
INPUT/OUTPUT
BUFFERS
OE
WE
CONTROL
LOGIC
CE
PROGRAM
PROGRAM
RESET
DATA LATCHES
DATA LATCHES
Y DECODER
X DECODER
Y-GATING
Y-GATING
1FFFF
1FFFF
ADDRESS
INPUTS
MAIN MEMORY
BLOCK 2
BOOT BLOCK
(16K BYTES)
1C000
1BFFF
(64K BYTES)
10000
0FFFF
PARAMETER
BLOCK 1
MAIN MEMORY
BLOCK 1
(8K BYTES)
1A000
19FFF
(32K BYTES)
08000
07FFF
PARAMETER
BLOCK 2
PARAMETER
BLOCK 2
(8K BYTES)
18000
17FFF
(8K BYTES)
06000
05FFF
MAIN MEMORY
BLOCK 1
PARAMETER
BLOCK 1
(32K BYTES)
10000
0FFFF
(8K BYTES)
04000
03FFF
MAIN MEMORY
BLOCK 2
BOOT BLOCK
(16K BYTES)
(64K BYTES)
00000
00000
AT49F001(N)(T)
2
AT49F001(N)(T)
Device Operation
READ: The AT49F001(N)(T) is accessed like an EPROM.
When CE and OE are low and WE is high, the data stored
at the memory location determined by the address pins is
asserted on the outputs. The outputs are put in the high
impedance state whenever CE or OE is high. This dual-line
control gives designers flexibility in preventing bus conten-
tion.
CHIP ERASE: If the boot block lockout has been enabled,
the Chip Erase function will erase Parameter Block 1,
Parameter Block 2, Main Memory Block 1, and Main Mem-
ory Block 2 but not the boot block. If the Boot Block Lockout
has not been enabled, the Chip Erase function will erase
the entire chip. After the full chip erase the device will
return back to read mode. Any command during chip erase
will be ignored.
COMMAND SEQUENCES: When the device is first pow-
ered on it will be reset to the read or standby mode
depending upon the state of the control line inputs. In order
to perform other device functions, a series of command
sequences are entered into the device. The command
sequences are shown in the Command Definitions table.
The command sequences are written by applying a low
pulse on the WE or CE input with CE or WE low (respec-
tively) and OE high. The address is latched on the falling
edge of CE or WE, whichever occurs last. The data is
latched by the first rising edge of CE or WE. Standard
microprocessor write timings are used. The address loca-
tions used in the command sequences are not affected by
entering the command sequences.
SECTOR ERASE: As an alternative to a full chip erase, the
device is organized into sectors that can be individually
erased. There are two 8K-byte parameter block sections
and two main memory blocks. The 8K-byte parameter
block sections can be independently erased and repro-
grammed. The two main memory sections are designed to
be used as alternative memory sectors. That is, whenever
one of the blocks has been erased and reprogrammed, the
other block should be erased and reprogrammed before
the first block is again erased. The Sector Erase command
is a six bus cycle operation. The sector address is latched
on the falling WE edge of the sixth cycle while the 30H data
input command is latched at the rising edge of WE. The
sector erase starts after the rising edge of WE of the sixth
cycle. The erase operation is internally controlled; it will
automatically time to completion.
RESET: A RESET input pin is provided to ease some sys-
tem applications. When RESET is at a logic high level, the
device is in its standard operating mode. A low level on the
RESET input halts the present device operation and puts
the outputs of the device in a high impedence state. If the
RESET pin makes a high to low transition during a program
or erase operation, the operation may not be sucessfully
completed and the operation will have to be repeated after
a high level is applied to the RESET pin. When a high level
is reasserted on the RESET pin, the device returns to the
read or standby mode, depending upon the state of the
control inputs. By applying a 12V ± 0.5V input signal to the
RESET pin, the boot block array can be reprogrammed
even if the boot block lockout feature has been enabled
(see Boot Block Programming Lockout Override section).
The RESET feature is not available for the AT49F001N(T).
BYTE PROGRAMMING: Once the memory array is
erased, the device is programmed (to a logical “0”) on a
byte-by-byte basis. Please note that a data “0” cannot be
programmed back to a “1”; only erase operations can con-
vert “0”s to “1”s. Programming is accomplished via the
internal device command register and is a 4 bus cycle
operation (please refer to the Command Definitions table).
The device will automatically generate the required internal
program pulses.
The program cycle has addresses latched on the falling
edge of WE or CE, whichever occurs last, and the data
latched on the rising edge of WE or CE, whichever occurs
first. Programming is completed after the specified tBP cycle
time. The DATA polling feature may also be used to indi-
cate the end of a program cycle.
ERASURE: Before a byte can be reprogrammed, the main
memory block or parameter block which contains the byte
must be erased. The erased state of the memory bits is a
logical “1”. The entire device can be erased at one time by
using a 6-byte software code. The software chip erase
code consists of 6-byte load commands to specific address
locations with a specific data pattern (please refer to the
Chip Erase Cycle Waveforms).
BOOT BLOCK PROGRAMMING LOCKOUT: The device
has one designated block that has a programming lockout
feature. This feature prevents programming of data in the
designated block once the feature has been enabled. The
size of the block is 16K bytes. This block, referred to as the
boot block, can contain secure code that is used to bring up
the system. Enabling the lockout feature will allow the boot
code to stay in the device while data in the rest of the
device is updated. This feature does not have to be acti-
vated; the boot block’s usage as a write protected region is
optional to the user. The address range of the boot block is
00000 to 03FFF for the AT49F001(N) while the address
After the software chip erase has been initiated, the device
will internally time the erase operation so that no external
clocks are required. The maximum time needed to erase
the whole chip is tEC. If the boot block lockout feature has
been enabled, the data in the boot sector will not be
erased.
3
range of the boot block is 1C000 to 1FFFF for the
AT49F001(N)T.
PRODUCT IDENTIFICATION: The product identification
mode identifies the device and manufacturer as Atmel. It
may be accessed by hardware or software operation. The
hardware operation mode can be used by an external pro-
grammer to identify the correct programming algorithm for
the Atmel product.
Once the feature is enabled, the data in the boot block can
no longer be erased or programmed with input voltage lev-
els of 5.5V or less. Data in the main memory block can still
be changed through the regular programming method. To
activate the lockout feature, a series of six program com-
mands to specific addresses with specific data must be
performed. Please refer to the Command Definitions table.
For details, see Operating Modes (for hardware operation)
or Software Product Identification. The manufacturer and
device code is the same for both modes.
BOOT BLOCK LOCKOUT DETECTION: A software
method is available to determine if programming of the boot
block section is locked out. When the device is in the soft-
ware product identification mode (see Software Product
Identification Entry and Exit sections) a read from address
location 00002H will show if programming the boot block is
locked out for the AT49F001(N) and a read from address
1C002H will show if programming the boot block is locked
out for the AT49F001(N)T. If the data on I/O0 is low, the
boot block can be programmed; if the data on I/O0 is high,
the program lockout feature has been activated and the
block cannot be programmed. The software product identi-
fication exit code should be used to return to standard
operation.
DATA POLLING: The AT49F001(N)(T) features DATA
polling to indicate the end of a program cycle. During a pro-
gram cycle an attempted read of the last byte loaded will
result in the complement of the loaded data on I/O7. Once
the program cycle has been completed, true data is valid
on all outputs and the next cycle may begin. DATA polling
may begin at any time during the program cycle.
TOGGLE BIT: In addition to DATA polling the
AT49F001(N)(T) provides another method for determining
the end of a program or erase cycle. During a program or
erase operation, successive attempts to read data from the
device will result in I/O6 toggling between one and zero.
Once the program cycle has completed, I/O6 will stop tog-
gling and valid data will be read. Examining the toggle bit
may begin at any time during a program cycle.
BOOT BLOCK PROGRAMMING LOCKOUT OVERRIDE:
The user can override the boot block programming lockout
by taking the RESET pin to 12 volts. By doing this, pro-
tected boot block data can be altered through a chip erase,
sector erase or word programming. When the RESET pin is
brought back to TTL levels the boot block programming
lockout feature is again active. This feature is not available
on the AT49F001N(T).
HARDWARE DATA PROTECTION: Hardware features
protect against inadvertent programs to the
AT49F001(N)(T) in the following ways: (a) VCC sense: if
VCC is below 3.8V (typical), the program function is inhib-
ited. (b) Program inhibit: holding any one of OE low, CE
high or WE high inhibits program cycles. (c) Noise filter:
pulses of less than 15 ns (typical) on the WE or CE inputs
will not initiate a program cycle.
AT49F001(N)(T)
4
AT49F001(N)(T)
Command Definition (in Hex)(1)
1st Bus
Cycle
2nd Bus
Cycle
3rd Bus
Cycle
4th Bus
Cycle
5th Bus
Cycle
6th Bus
Cycle
Command
Sequence
Bus
Cycles
Addr
Addr
5555
5555
5555
5555
5555
5555
XXXX
Data
DOUT
AA
Addr Data Addr Data Addr Data Addr Data Addr Data
Read
1
6
6
4
6
3
3
1
Chip Erase
2AAA
2AAA
2AAA
2AAA
2AAA
2AAA
55
55
55
55
55
55
5555
5555
5555
5555
5555
5555
80
80
A0
80
90
F0
5555
5555
Addr
5555
AA
AA
DIN
AA
2AAA
2AAA
55
55
5555
SA(4)
10
30
Sector Erase
AA
Byte Program
Boot Block Lockout(2)
Product ID Entry
Product ID Exit(3)
Product ID Exit(3)
AA
AA
2AAA
55
5555
40
AA
AA
F0
Notes: 1. The DATA FORMAT in each bus cycle is as follows: I/O7 - I/O0 (Hex)
2. The 16K byte boot sector has the address range 00000H to 03FFFH for the AT49F001(N) and
1C000H to 1FFFFH for the AT49F001(N)T.
3. Either one of the Product ID Exit commands can be used.
4. SA = sector addresses
For the AT49F001(N):
SA = 10000 to 1FFFF for BOOT BLOCK
Nothing will happen and the device goes back to the read mode in 100 ns
SA = 04000 to 05FFF for PARAMETER BLOCK 1
SA = 06000 to 07FFF for PARAMETER BLOCK 2
SA = 08000 to 0FFFF for MAIN MEMORY ARRAY BLOCK 1
This command will erase - PB1, PB2 and MMB1
SA = 10000 to 1FFFF for MAIN MEMORY ARRAY BLOCK 2
For the AT49F001(N)T:
SA = 1C000 to 1FFFF for BOOT BLOCK
Nothing will happen and the device goes back to the read mode in 100 ns
SA = 1A000 to 1BFFF for PARAMETER BLOCK 1
SA = 18000 to 19FFF for PARAMETER BLOCK 2
SA = 10000 to 17FFF for MAIN MEMORY ARRAY BLOCK 1
This command will erase - PB1, PB2 and MMB1
SA = 00000 to 0FFFF for MAIN MEMORY ARRAY BLOCK 2
Absolute Maximum Ratings*
*NOTICE:
Stresses beyond those listed under “Absolute Maxi-
mum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional
operation of the device at these or any other condi-
tions beyond those indicated in the operational sec-
tions of this specification is not implied. Exposure to
absolute maximum rating conditions for extended
periods may affect device reliability.
Temperature Under Bias................................ -55°C to +125°C
Storage Temperature..................................... -65°C to +150°C
All Input Voltages
(including NC Pins)
with Respect to Ground...................................-0.6V to +6.25V
All Output Voltages
with Respect to Ground.............................-0.6V to VCC + 0.6V
Voltage on OE
with Respect to Ground...................................-0.6V to +13.5V
5
DC and AC Operating Range
AT49F001(N)(T)-55
AT49F001(N)(T)-70
0°C - 70°C
AT49F001(N)(T)-90
0°C - 70°C
AT49F001(N)(T)-12
0°C - 70°C
Com.
Ind.
0°C - 70°C
-40°C - 85°C
5V ± 10%
Operating
Temperature (Case)
-40°C - 85°C
5V ± 10%
-40°C - 85°C
5V ± 10%
-40°C - 85°C
5V ± 10%
VCC Power Supply
Operating Modes
Ai
Ai
Ai
X
Mode
CE
OE
VIL
VIH
X(1)
X
WE
VIH
VIL
X
RESET(6)
VIH
I/O
Read
VIL
VIL
VIH
X
DOUT
DIN
Program/Erase(2)
Standby/Write Inhibit
Program Inhibit
Program Inhibit
Output Disable
Reset
VIH
VIH
High Z
VIH
X
VIH
X
VIL
VIH
X
VIH
X
X
VIH
High Z
High Z
X
X
VIL
X
Product Identification
A1 - A16 = VIL, A9 = VH,(3)
A0 = VIL
Manufacturer Code(4)
Device Code(4)
Hardware
A1 - A16 = VIL, A9 = VH,(3)
A0 = VIH
VIL
VIL
VIH
A0 = VIL, A1 - A16=VIL
A0 = VIH, A1 - A16=VIL
Manufacturer Code(4)
Device Code(4)
Software(5)
Notes: 1. X can be VIL or VIH.
2. Refer to AC Programming Waveforms.
3. VH = 12.0V ± 0.5V.
4. Manufacturer Code: 1FH, Device Code: 05H - AT49F001(N), 04H - AT49F001(N)T
5. See details under Software Product Identification Entry/Exit.
6. This pin is not available on the AT49F001N(T).
DC Characteristics
Symbol
Parameter
Condition
Min
Max
10
Units
µA
µA
µA
µA
mA
mA
V
ILI
Input Load Current
Output Leakage Current
VIN = 0V to VCC
VI/O = 0V to VCC
ILO
10
Com.
Ind.
100
300
3
ISB1
VCC Standby Current CMOS
CE = VCC - 0.3V to VCC
ISB2
VCC Standby Current TTL
VCC Active Current
Input Low Voltage
CE = 2.0V to VCC
(1)
ICC
f = 5 MHz; IOUT = 0 mA
50
VIL
0.8
VIH
Input High Voltage
Output Low Voltage
Output High Voltage
2.0
V
VOL
VOH1
VOH2
IOL = 2.1 mA
.45
V
IOH = -400 µA
2.4
4.2
V
Output High Voltage CMOS
IOH = -100 µA; VCC = 4.5V
V
Note:
1. In the erase mode, ICC is 90 mA.
AT49F001(N)(T)
6
AT49F001(N)(T)
AC Read Characteristics
AT49F001(N)(T)-50
AT49F001(N)(T)-70
AT49F001(N)(T)-90
AT49F001(N)(T)-12
Symbol
Parameter
Min
Max
50
Min
Max
70
Min
Max
90
Min
Max
120
120
50
Units
ns
tACC
Address to Output Delay
CE to Output Delay
OE to Output Delay
CE or OE to Output Float
(1)
tCE
50
70
90
ns
(2)
tOE
0
0
30
0
0
35
0
0
40
0
0
ns
(3)(4)
tDF
25
25
25
30
ns
Output Hold from OE, CE
or Address, whichever
occurred first
tOH
0
0
0
0
ns
AC Read Waveforms (1)(2)(3)(4)
ADDRESS
ADDRESS VALID
CE
tCE
tOE
OE
tDF
tOH
tACC
HIGH Z
OUTPUT
VALID
OUTPUT
Notes: 1. CE may be delayed up to tACC - tCE after the address transition without impact on tACC
2. OE may be delayed up to tCE - tOE after the falling edge of CE without impact on tCE or by tACC - tOE after an address change
without impact on tACC
.
.
3. tDF is specified from OE or CE whichever occurs first (CL = 5 pF).
4. This parameter is characterized and is not 100% tested.
Input Test Waveform and
Measurement Level
Output Load Test
55 ns
70/90/120 ns
5.0V
5.0V
1.8K
1.8K
OUTPUT
OUTPUT
PIN
PIN
30 pF
100 pF
1.3K
1.3K
tR, tF < 5 ns
Pin Capacitance
(f = 1 MHz, T = 25°C)(1)
Typ
4
Max
Units
pF
Conditions
VIN = 0V
CIN
6
COUT
8
12
pF
VOUT = 0V
Note:
1. This parameter is characterized and is not 100% tested.
7
AC Byte Load Characteristics
Symbol
Parameter
Min
0
Max
Units
ns
t
AS, tOES
Address, OE Set-up Time
Address Hold Time
tAH
tCS
tCH
tWP
tDS
50
0
ns
Chip Select Set-up Time
Chip Select Hold Time
Write Pulse Width (WE or CE)
Data Set-up Time
ns
0
ns
90
50
0
ns
ns
ns
ns
t
DH, tOEH
Data, OE Hold Time
Write Pulse Width High
90
tWPH
AC Byte Load Waveforms
WE Controlled
OE
tOES
tOEH
ADDRESS
CE
tAS
tAH
tCH
tCS
WE
tWPH
tWP
tDH
tDS
DATA IN
CE Controlled
OE
tOES
tOEH
ADDRESS
WE
tAS
tAH
tCH
tCS
CE
tWPH
tWP
tDH
tDS
DATA IN
AT49F001(N)(T)
8
AT49F001(N)(T)
Program Cycle Characteristics
Symbol
Parameter
Min
Typ
Max
Units
µs
tBP
Byte Programming Time
Address Set-up Time
Address Hold Time
Data Set-up Time
Data Hold Time
10
50
tAS
0
ns
tAH
50
50
0
ns
tDS
ns
tDH
ns
tWP
Write Pulse Width
Write Pulse Width High
Erase Cycle Time
90
90
ns
tWPH
tEC
ns
10
seconds
Program Cycle Waveforms
PROGRAM CYCLE
OE
CE
t
t
t
WP
BP
WPH
WE
t
t
t
AS
AH
DH
5555
5555
2AAA
ADDRESS
A0-A16
DATA
t
DS
INPUT
DATA
55
A0
AA
Sector or Chip Erase Cycle Waveforms
(1)
OE
CE
t
t
WP
WPH
WE
A0-A16
DATA
t
t
t
DH
AS
AH
5555
5555
5555
Note
2
2AAA
2AAA
t
t
EC
DS
55
BYTE
80
55
BYTE
Note 3
AA
BYTE
AA
BYTE
0
1
BYTE
2
3
4
BYTE 5
Notes: 1. OE must be high only when WE and CE are both low.
2. For chip erase, the address should be 5555. For sector erase, the address depends on what sector is to be erased.
(See note 4 under command definitions.)
3. For chip erase, the data should be 10H, and for sector erase, the data should be 30H.
9
Data Polling Characteristics(1)
Symbol
Parameter
Min
10
Typ
Max
Units
ns
tDH
Data Hold Time
tOEH
tOE
OE Hold Time
10
ns
OE to Output Delay(2)
Write Recovery Time
ns
tWR
0
ns
Notes: 1. These parameters are characterized and not 100% tested.
2. See tOE spec in AC Read Characteristics.
DATA Polling Waveforms
WE
CE
t
OEH
OE
t
DH
t
WR
t
OE
HIGHZ
An
I/O7
A0-A16
An
An
An
An
Toggle Bit Characteristics(1)
Symbol
Parameter
Min
10
Typ
Max
Units
ns
tDH
Data Hold Time
tOEH
tOE
tOEHP
tWR
OE Hold Time
10
ns
OE to Output Delay(2)
OE High Pulse
ns
150
0
ns
Write Recovery Time
ns
Notes: 1. These parameters are characterized and not 100% tested.
2. See tOE spec in AC Read Characteristics.
Toggle Bit Waveforms(1)(2)(3)
WE
CE
tOEH
tOEHP
OE
tOE
tDH
HIGH Z
I/O6
tWR
Notes: 1. Toggling either OE or CE or both OE and CE will operate toggle bit. The tOEHP specification must be met by the toggling
input(s).
2. Beginning and ending state of I/O6 will vary.
3. Any address location may be used but the address should not vary.
AT49F001(N)(T)
10
AT49F001(N)(T)
Software Product
Boot Block Lockout
Identification Entry(1)
Feature Enable Algorithm(1)
LOAD DATA AA
TO
ADDRESS 5555
LOAD DATA AA
TO
ADDRESS 5555
LOAD DATA 55
TO
ADDRESS 2AAA
LOAD DATA 55
TO
ADDRESS 2AAA
LOAD DATA 80
TO
ADDRESS 5555
LOAD DATA 90
TO
ADDRESS 5555
LOAD DATA AA
TO
ADDRESS 5555
ENTER PRODUCT
IDENTIFICATION
LOAD DATA 55
TO
ADDRESS 2AAA
(2)(3)(5)
MODE
LOAD DATA 40
TO
ADDRESS 5555
Software Product
Identification Exit(1)
(2)
PAUSE 1 second
OR
LOAD DATA AA
TO
LOAD DATA F0
TO
ADDRESS 5555
ANY ADDRESS
Notes for boot block lockout feature enable:
1. Data Format: I/O7 - I/O0 (Hex);
Address Format: A14 - A0 (Hex).
LOAD DATA 55
TO
ADDRESS 2AAA
EXIT PRODUCT
IDENTIFICATION
(4)
MODE
2. Boot block lockout feature enabled.
LOAD DATA F0
TO
ADDRESS 5555
EXIT PRODUCT
IDENTIFICATION
(4)
MODE
Notes for software product identification
1. Data Format: I/O7 - I/O0 (Hex);
Address Format: A14 - A0 (Hex).
2. A1 - A16 = VIL.
Manufacture Code is read for A0 = VIL;
Device Code is read for A0 = VIH.
3. The device does not remain in identification mode if
powered down.
4. The device returns to standard operation mode.
5. Manufacturer Code: 1FH
Device Code: 05H - AT49F001(N)
04H - AT49F001(N)T
11
AT49F001 Ordering Information
I
CC (mA)
tACC
(ns)
Active
Standby
Ordering Code
Package
Operation Range
55
50
0.1
AT49F001-55JC
AT49F001-55PC
AT49F001-55TC
AT49F001-55VC
32J
Commercial
32P6
32T
32V
(0° to 70°C)
50
50
50
50
50
50
50
0.3
0.1
0.3
0.1
0.3
0.1
0.3
AT49F001-55JI
AT49F001-55PI
AT49F001-55TI
AT49F001-55VI
32J
Industrial
32P6
32T
32V
(-40° to 85°C)
70
AT49F001-70JC
AT49F001-70PC
AT49F001-70TC
AT49F001-70VC
32J
Commercial
32P6
32T
32V
(0° to 70°C)
AT49F001-70JI
AT49F001-70PI
AT49F001-70TI
AT49F001-70VI
32J
Industrial
32P6
32T
32V
(-40° to 85°C)
90
AT49F001-90JC
AT49F001-90PC
AT49F001-90TC
AT49F001-90VC
32J
Commercial
32P6
32T
32V
(0° to 70°C)
AT49F001-90JI
AT49F001-90PI
AT49F001-90TI
AT49F001-90VI
32J
Industrial
32P6
32T
32V
(-40° to 85°C)
120
AT49F001-12JC
AT49F001-12PC
AT49F001-12TC
AT49F001-12VC
32J
Commercial
32P6
32T
32V
(0° to 70°C)
AT49F001-12JI
AT49F001-12PI
AT49F001-12TI
AT49F001-12VI
32J
Industrial
32P6
32T
32V
(-40° to 85°C)
Package Type
32J
32-Lead, Plastic, J-Leaded Chip Carrier Package (PLCC)
32-Lead, 0.600" Wide, Plastic Dual In-line Package (PDIP)
32-Lead, Plastic Thin Small Outline Package (TSOP)
32P6
32T
32V
32-Lead, Plastic Thin Small Outline Package (TSOP) (8 x 14 mm)
AT49F001(N)(T)
12
AT49F001(N)(T)
AT49F001N Ordering Information
I
CC (mA)
tACC
(ns)
Active
Standby
Ordering Code
Package
Operation Range
55
50
0.1
AT49F001N-55JC
AT49F001N-55PC
AT49F001N-55TC
AT49F001N-55VC
32J
Commercial
32P6
32T
32V
(0° to 70°C)
50
50
50
50
50
50
50
0.3
0.1
0.3
0.1
0.3
0.1
0.3
AT49F001N-55JI
AT49F001N-55PI
AT49F001N-55TI
AT49F001N-55VI
32J
Industrial
32P6
32T
32V
(-40° to 85°C)
70
AT49F001N-70JC
AT49F001N-70PC
AT49F001N-70TC
AT49F001N-70VC
32J
Commercial
32P6
32T
32V
(0° to 70°C)
AT49F001N-70JI
AT49F001N-70PI
AT49F001N-70TI
AT49F001N-70VI
32J
Industrial
32P6
32T
32V
(-40° to 85°C)
90
AT49F001N-90JC
AT49F001N-90PC
AT49F001N-90TC
AT49F001N-90VC
32J
Commercial
32P6
32T
32V
(0° to 70°C)
AT49F001N-90JI
AT49F001N-90PI
AT49F001N-90TI
AT49F001N-90VI
32J
Industrial
32P6
32T
32V
(-40° to 85°C)
120
AT49F001N-12JC
AT49F001N-12PC
AT49F001N-12TC
AT49F001N-12VC
32J
Commercial
32P6
32T
32V
(0° to 70°C)
AT49F001N-12JI
AT49F001N-12PI
AT49F001N-12TI
AT49F001N-12VI
32J
Industrial
32P6
32T
32V
(-40° to 85°C)
Package Type
32J
32-Lead, Plastic, J-Leaded Chip Carrier Package (PLCC)
32-Lead, 0.600" Wide, Plastic Dual In-line Package (PDIP)
32-Lead, Plastic Thin Small Outline Package (TSOP)
32P6
32T
32V
32-Lead, Plastic Thin Small Outline Package (TSOP) (8 x 14 mm)
13
AT49F001T Ordering Information
I
CC (mA)
tACC
(ns)
Active
Standby
Ordering Code
Package
Operation Range
55
50
0.1
AT49F001T-55JC
AT49F001T-55PC
AT49F001T-55TC
AT49F001T-55VC
32J
Commercial
32P6
32T
32V
(0° to 70°C)
50
50
50
50
50
50
50
0.3
0.1
0.3
0.1
0.3
0.1
0.3
AT49F001T-55JI
AT49F001T-55PI
AT49F001T-55TI
AT49F001T-55VI
32J
Industrial
32P6
32T
32V
(-40° to 85°C)
70
AT49F001T-70JC
AT49F001T-70PC
AT49F001T-70TC
AT49F001T-70VC
32J
Commercial
32P6
32T
32V
(0° to 70°C)
AT49F001T-70JI
AT49F001T-70PI
AT49F001T-70TI
AT49F001T-70VI
32J
Industrial
32P6
32T
32V
(-40° to 85°C)
90
AT49F001T-90JC
AT49F001T-90PC
AT49F001T-90TC
AT49F001T-90VC
32J
Commercial
32P6
32T
32V
(0° to 70°C)
AT49F001T-90JI
AT49F001T-90PI
AT49F001T-90TI
AT49F001T-90VI
32J
Industrial
32P6
32T
32V
(-40° to 85°C)
120
AT49F001T-12JC
AT49F001T-12PC
AT49F001T-12TC
AT49F001T-12VC
32J
Commercial
32P6
32T
32V
(0° to 70°C)
AT49F001T-12JI
AT49F001T-12PI
AT49F001T-12TI
AT49F001T-12VI
32J
Industrial
32P6
32T
32V
(-40° to 85°C)
Package Type
32J
32-Lead, Plastic, J-Leaded Chip Carrier Package (PLCC)
32-Lead, 0.600" Wide, Plastic Dual Inline Package (PDIP)
32-Lead, Plastic Thin Small Outline Package (TSOP)
32P6
32T
32V
32-Lead, Plastic Thin Small Outline Package (TSOP) (8 x 14 mm)
AT49F001(N)(T)
14
AT49F001(N)(T)
AT49F001NT Ordering Information
tACC
(ns)
ICC (mA)
Ordering Code
Package
Operation Range
55
50
50
50
50
50
50
50
50
0.1
0.3
0.1
0.3
0.1
0.3
0.1
0.3
AT49F001NT-55JC
AT49F001NT-55PC
AT49F001NT-55TC
AT49F001NT-55VC
32J
Commercial
32P6
32T
32V
(0° to 70°C)
AT49F001NT-55JI
AT49F001NT-55PI
AT49F001NT-55TI
AT49F001NT-55VI
32J
Industrial
32P6
32T
32V
(-40° to 85°C)
70
AT49F001NT-70JC
AT49F001NT-70PC
AT49F001NT-70TC
AT49F001NT-70VC
32J
Commercial
32P6
32T
32V
(0° to 70°C)
AT49F001NT-70JI
AT49F001NT-70PI
AT49F001NT-70TI
AT49F001NT-70VI
32J
Industrial
32P6
32T
32V
(-40° to 85°C)
90
AT49F001NT-90JC
AT49F001NT-90PC
AT49F001NT-90TC
AT49F001NT-90VC
32J
Commercial
32P6
32T
32V
(0° to 70°C)
AT49F001NT-90JI
AT49F001NT-90PI
AT49F001NT-90TI
AT49F001NT-90VI
32J
Industrial
32P6
32T
32V
(-40° to 85°C)
120
AT49F001NT-12JC
AT49F001NT-12PC
AT49F001NT-12TC
AT49F001NT-12VC
32J
Commercial
32P6
32T
32V
(0° to 70°C)
AT49F001NT-12JI
AT49F001NT-12PI
AT49F001NT-12TI
AT49F001NT-12VI
32J
Industrial
32P6
32T
32V
(-40° to 85°C)
Package Type
32J 32-Lead, Plastic, J-Leaded Chip Carrier Package (PLCC)
32P6 32-Lead, 0.600" Wide, Plastic Dual In-line Package (PDIP)
32T 32-Lead, Plastic Thin Small Outline Package (TSOP)
32V 32-Lead, Plastic Thin Small Outline Package (TSOP) (8 x 14 mm)
15
AT49F001(N)(T)
Packaging Information
32J, 32-Lead, Plastic J-Leaded Chip Carrier (PLCC)
32P6, 32-Lead, 0.600" Wide,
Dimensions in Inches and (Millimeters)
JEDEC STANDARD MS-016 AE
Plastic Dual In-line Package (PDIP)
Dimensions in Inches and (Millimeters)
1.67(42.4)
1.64(41.7)
.025(.635) X 30° - 45°
.045(1.14) X 45° PIN NO. 1
.012(.305)
PIN
1
IDENTIFY
.008(.203)
.530(13.5)
.553(14.0)
.490(12.4)
.566(14.4)
.530(13.5)
.547(13.9)
.032(.813)
.026(.660)
.021(.533)
.013(.330)
.595(15.1)
.585(14.9)
.090(2.29)
MAX
.030(.762)
.015(3.81)
.095(2.41)
.060(1.52)
.140(3.56)
.120(3.05)
.050(1.27) TYP
1.500(38.10) REF
.300(7.62) REF
.430(10.9)
.390(9.90)
.220(5.59)
MAX
.005(.127)
MIN
AT CONTACT
POINTS
SEATING
PLANE
.065(1.65)
.015(.381)
.022(.559)
.014(.356)
.161(4.09)
.125(3.18)
.065(1.65)
.041(1.04)
.022(.559) X 45° MAX (3X)
.110(2.79)
.090(2.29)
.630(16.0)
.590(15.0)
.453(11.5)
.447(11.4)
0
15
.495(12.6)
.485(12.3)
REF
.012(.305)
.008(.203)
.690(17.5)
.610(15.5)
32T, 32-Lead, Plastic Thin Small Outline Package
(TSOP)
32V, 32-Lead, Plastic Thin Small Outline Package
(TSOP)
Dimensions in Millimeters and (Inches)*
Dimensions in Millimeters and (Inches)*
JEDEC OUTLINE MO-142 BA
INDEX
MARK
INDEX
MARK
12.5(.492)
12.3(.484)
14.2(.559)
13.8(.543)
18.5(.728)
18.3(.720)
20.2(.795)
19.8(.780)
0.50(.020)
BSC
0.50(.020)
BSC
0.25(.010)
0.15(.006)
0.25(.010)
0.15(.006)
7.50(.295)
REF
7.50(.295)
REF
8.10(.319)
7.90(.311)
8.20(.323)
7.80(.307)
1.20(.047) MAX
1.20(.047) MAX
0.15(.006)
0.05(.002)
0.15(.006)
0.05(.002)
0
0
0.20(.008)
0.10(.004)
REF
5
0.20(.008)
0.10(.004)
REF
5
0.70(.028)
0.50(.020)
0.70(.028)
0.50(.020)
*Controlling dimension: millimeters
*Controlling dimension: millimeters
16
AT49F001N-12TI 相关器件
| 型号 | 制造商 | 描述 | 价格 | 文档 |
| AT49F001N-12VC | ATMEL | 1-Megabit 128K x 8 5-volt Only Flash Memory | 获取价格 |
|
| AT49F001N-12VI | ATMEL | 1-Megabit 128K x 8 5-volt Only Flash Memory | 获取价格 |
|
| AT49F001N-55JC | ATMEL | 1-Megabit 128K x 8 5-volt Only Flash Memory | 获取价格 |
|
| AT49F001N-55JI | ATMEL | 1-Megabit 128K x 8 5-volt Only Flash Memory | 获取价格 |
|
| AT49F001N-55PC | ATMEL | 1-Megabit 128K x 8 5-volt Only Flash Memory | 获取价格 |
|
| AT49F001N-55PI | ATMEL | 1-Megabit 128K x 8 5-volt Only Flash Memory | 获取价格 |
|
| AT49F001N-55TC | ATMEL | 1-Megabit 128K x 8 5-volt Only Flash Memory | 获取价格 |
|
| AT49F001N-55TI | ATMEL | 1-Megabit 128K x 8 5-volt Only Flash Memory | 获取价格 |
|
| AT49F001N-55VC | ATMEL | 1-Megabit 128K x 8 5-volt Only Flash Memory | 获取价格 |
|
| AT49F001N-55VI | ATMEL | 1-Megabit 128K x 8 5-volt Only Flash Memory | 获取价格 |
|
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