AS27C256-20ECA中文资料_数据手册_规格书

UVEPROM

AS27C256

Austin Semiconductor, Inc.

256K UVEPROM

PIN ASSIGNMENT

UV Erasable Programmable

(Top View)

Read-Only Memory

28-Pin DIP (J)

(600 MIL)

AVAILABLE AS MILITARY

SPECIFICATIONS

V_PP

A12

A7

A6

A5

A4

A3

A2

A1

A0

DQ0

DQ1

DQ2

GND

1

2

3

4

5

6

7

8

Vcc

A14

A13

A8

A9

A11

G\

28

27

26

25

24

23

22

21

• -55C to 125C operation

• MILITARYProcessing Method MIL-PRF-38535, Class Q

• Commercial VersionAvailable

A10

9

FEATURES

• Organized 32,768 x 8

• Single +5V ±10% power supply

• Pin-compatible with existing 256K ROM’s and EPROM’s

• All inputs/outputs fully TTL compatible

• Power-saving CMOS technology

• Very high-speed FLASHRITE Pulse Programming

• 3-state output buffers

20 E\

10

11

12

13

14

DQ7

19

18 DQ6

17 DQ5

16 DQ4

15

DQ3

32-Pin LCC (ECA)

(450 x 550 mils)

• 400-mV DC assured noise immunity with standard TTL

loads

4

3 2 1 32 31 30

• Latchup immunity of 250 mA on all input and output pins

• Low power dissipation (CMOS Input Levels)

-Active - 165mW Worst Case

-Standby - 1.7mW Worst Case (CMOS-input levels)

* FUTURE High Speed Offerings: 55ns, 70ns, 90ns

A6

5

6

7

8

9

10

11

12

13

A7

A5

WE^\

A8

A9

A13

29

28

27 A11

A8

26

25

24

23

22

21

A6

A4

A5

A3

A4

NC

A9

G\

A11

A3

A2

A1

\

A

E\

O

10

E

A1

A0

A10

A0

NC

CE1^\

DQ7

DQ1

DQ0

DQ8

DQ6

OPTIONS

• Timing

MARKING

14 15 16 17 18 19 20

120ns access

150ns access

170ns access

200ns access

250ns access

300ns access

55ns access

70ns access

90ns access

-12

-15

-17

-20

-25

-30

-55

-70

-90

Pin Name

Function

A0 - A14 Address Inputs

DQ0-DQ7 Inputs (programming)/Outputs

E\

G\

Chip Enable/Power Down

Output Enable

Ground

GND

V

5V Supply

CC

• Package(s)

Ceramic DIP (600mils)

V

13V Programming Power Supply

PP

J

No. 110

Ceramic LCC (450 x 550 mils) ECA No. 208

• Processing / Operating Temperature Ranges

Full Military (-55^oC to +125^oC)

Industrial (-40°C to +85°C)

M

I

For more products and information

please visit our web site at

MilitaryTemp (-55^oC to +125^oC) XT

www.austinsemiconductor.com

Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.

AS27C256

Rev. 2.0 7/06

1

UVEPROM

AS27C256

Austin Semiconductor, Inc.

GENERAL DESCRIPTION

TheAS27C256 series is a set of 262,144 bit, ultraviolet-light

erasable, electrically programmable read-only memories.

Because this EPROM operates from a single 5V supply (in

the read mode), it is ideal for use in microprocessor-based sys-

tems. One other supply (12.75V) is needed for programming.

These devices are fabricated using power-saving CMOS tech-

nology for high speed and simple interface with MOS and bipo-

lar circuits. All inputs (including program data inputs) can be

driven by Series 54 TTL circuits without the use of external

pullup resistors. Each output can drive one Series 54 TTL

circuit without external resistors. The data outputs are 3-state

All programming signals are TTL level. This device is

pro-

grammable by theAMD FLASHRITE Pulse programming algo-

rithm. The FLASHRITE Pulse programming algorithm uses a

V_PPof 12.75VV and a V_CCof 6.25V for a nominal programming

time of four seconds. For programming outside the system,

existing EPROM programmers can be used. Locations can be

programmed singly, in blocks, or at random.

for connecting multiple devices to a

common bus. The

AS27C256 is pin-compatible with 28-pin 256K ROMs and

EPROMs. It is offered in a 600mil dual-in-line ceramic package

(J suffix) and a 450 x 550 mil ceramic LCC (ECA suffix) rated for

operation from -55°C to 125°C.

FUNCTIONAL BLOCK DIAGRAM*

EPROM 32,768 x 8

10

0

A0

A1

A2

A3

A4

A5

A6

A7

A8

9

8

7

6

5

4

11

12

13

15

16

17

18

19

DQ0

DQ1

DQ2

DQ3

DQ4

DQ5

DQ6

DQ7

A

3

25

24

21

0

A

A9

32,767

A10

A11

A12

A13

A14

E\

23

2

26

27

14

20

22

[PWR DWN]

&

G\

EN

* This symbol is in accordance with ANSI/IEEE std 91-1984 and IEC Publication 617-12.

Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.

AS27C256

Rev. 2.0 7/06

2

UVEPROM

AS27C256

Austin Semiconductor, Inc.

OPERATION

The seven modes of operation for the AS27C256 are listed in Table 1. The read mode requires a single 5V supply.

All inputs are TTL level except for V_PPduring programming (12.75V for FLASHRITE Pulse), and (12V) on A9

for signature mode.

TABLE 1. OPERATION MODES

MODE*

FUNCTION

OUTPUT

DISABLE

PROGRAM

INHIBIT

SIGNATURE MODE

(PINS)

READ

STANDBY PROGRAMMING VERIFY

V_IL

E\

G\

V_IL

V_IH

X

V_IL

V_IH

V_PP

V_CC

X

V_IH

V_IL

V_PP

V_CC

X

V_IH

X

X¹

V_CC

X

X¹

V_CC

X

X¹

V_CC

V_PP

V_CC

A9

V_PP

V_CC

X

V_CC+/-.3V

2

X

V_ID

A0

X

V_IL

V_IH

CODE**

DQ0-DQ7

Data Out High-Z

High-Z

Data In

Data Out

High-Z

MFG

01h

DEVICE

10h

¹For normal standby & read operation, VPP is Don't Care X.

²V_ID= 12V +/- .5V

NOTES:

* X can be V_ILor V_IH

** Die is AMD. User can program on benchtop programmer by selecting AM27C256 from the device

type selection menu.

Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.

AS27C256

Rev. 2.0 7/06

3

UVEPROM

AS27C256

Austin Semiconductor, Inc.

FLASHRITE PULSE PROGRAMMING

READ/OUTPUT DISABLE

The AS27C256 EPROM is programmed by using the AMD

FLASHRITE Pulse programming algorithm as illustrated by the

flowchart in Figure 1. This algorithm programs the device in a

nominal time of 4 seconds. Actual programming time varies as

a function of the programmer used.

When the outputs of two or more AS27C256 are connected in

parallel on the same bus, the output of any particular device in

the circuit can be read with no interference from the compet-

ing outputs of the other devices. To read the output of the

selected AS27C256, a low-level signal is applied to E\ and G\.

All other devices in the circuit should have their outputs

disabled by applying a high-level signal to one of these pins.

Output data is accessed at pins DQ0 through DQ7.

Data is presented in parallel (eight bits) on pins DQ0 to DQ7.

Once addresses and data are stable, E\ is pulsed.

The FLASHRITE Pulse programming algorithm uses initial

pulses of 100 microseconds (µs) followed by a byte-verifica-

tion step to determine when the addressed byte has been suc-

cessfully programmed. Up to 25 100µs pulses per byte are

provided before a failure is recognized.

LATCHUPIMMUNITY

Latchup immunity on theAS27C256 is a minimum of 250mAon

all inputs and outputs. This feature provides latchup

munity beyond any potential transients at the printed

cuit board level when the EPROM is interfaced to industry

standard TTL or MOS logic devices. Input/output layout

approach controls latchup without compromising performance

or packing density.

im-

cir-

The programming mode is achieved when V_PP= 12.75V,

V_CC= 6.25V, G\ = V_IH, and E\ = V_IL. More than one device can be

programmed when the devices are connected in parallel. Loca-

tions can be programmed in any order. When the AMD

FLASHRITE Pulse programming routine is completed, all bits

POWER DOWN

Active I_CCsupply current can be reduced from 25mA (AS27C256-

12 throughAS27C256-25) to 1mA(TTL-level inputs) or 300µA

(CMOS-level inputs) by applying a high TTL/CMOS signal to

the E\ pin. In this mode all outputs are in the high-impedance

state.

are verified with V_CC= V_PP= 5V.

PROGRAM INHIBIT

Programming can be inhibited by maintaining a high-level

input on E\.

ERASURE

Before programming, theAS27C256 is erased by exposing the

chip through the transparent lid to a high-intensity ultraviolet

light (wavelength 2537 Å). EPROM erasure before program-

ming is necessary to ensure that all bits are in the logic-high

state. Logic-lows are programmed into the desired locations. A

programmed logic-low can be erased only by ultraviolet light.

The recommended minimum exposure dose (UV intensity x ex-

posure time) is 15W•s/cm². Atypical 12mW/cm², filterless UV

lamp erases the device in 21 minutes. The lamp should be

located about 2.5cm above the chip during erasure. After era-

sure, all bits are in the high state. It should be noted that normal

ambient light contains the correct wavelength for erasure; there-

fore, when using theAS27C256, the window should be covered

with an opaque label.

PROGRAM VERIFY

Programmed bits can be verified with V_PP= 12.75V when G\ =

V_IL, and E\ = V_IH.

SIGNATURE MODE

The signature mode provides access to a binary code

tifying the manufacturer and device type. This mode is acti-

vated whenA9 is forced to 12V ±0.5V. Two identifier bytes are

iden-

accessed by A0 (terminal 10); i.e., A0=V_ILaccesses the manu-

facturer code, which is output on DQ0-DQ7;A0=V_IHaccesses

the device code, which is also output on DQ0-DQ7. All other

addresses must be held at VIL. Each byte contains odd parity

on bit DQ7. The manufacturer code for these devices is 01h

and the device code is 10h.

Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.

AS27C256

Rev. 2.0 7/06

4

UVEPROM

AS27C256

Austin Semiconductor, Inc.

FIGURE 1. FLASHRITE PULSE PROGRAMMING FLOWCHART

Start

Address = First Location

VCC=6.25V, VPP=12.75V

X = 0

Program One 100us Pulse

Increment X

Programming

Section

X = 25 ?

YES

NO

Program

Verify

Byte?

FAIL

Pass

Last

Increment Address NO Address?

Yes

VCC = VPP = 5.25V

Read

Verify

Section

READ

Verify

Bytes?

FAIL

Device Failed

Pass

Device Passed

Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.

AS27C256

Rev. 2.0 7/06

5

UVEPROM

AS27C256

Austin Semiconductor, Inc.

ABSOLUTE MAXIMUM RATINGS*

Supply Voltage Range, V_CC**...........................-0.6V to +7.0V

Supply Voltage Range, V_pp**...............................-0.6V to +13.5V

*Stresses greater than those listed under "Absolute Maximum

Ratings" may cause permanent damage to the device. This is

a stress rating only and functional operation of the device at

these or any other conditions above those indicated in the

Input Voltage Range,All inputs exceptA9**..-0.6V to +6.0V

A9.....-0.6V to +13.5V

operation section of this specification is not implied.

Expo-

sure to absolute maximum rating conditions for extended peri-

ods may affect reliability.

Output Voltage Range**...............................-0.6V to V_CC+.6V

Minimum Operating Free-air Temperature, T_A..............-55°C

Maximum Operating CaseTemperature, T_C...................125°C

Storage Temperature Range, T_stg.....................-65°C to 150°C

** All voltage values are with respect to GND.

RECOMMENDED OPERATING CONDITIONS

MIN

TYP

5

MAX

5.5

Read Mode¹

4.5

6

V_CC

Supply Voltage

FLASHRITE Pulse programming algorithm

Read Mode²

6.25

6.5

V_CC-0.6

13

V_PP

Supply Voltage

FLASHRITE Pulse programming algorithm

12.5

2.2

12.75

TTL inputs

V_CC+.6

V_IH

V_IL

High-level input voltage

Low-level input voltage

CMOS inputs V_CC-0.2

V_CC+.6

TTL inputs

-0.5

0.8

0.2

CMOS inputs

Voltage level on A9 for signature mode

Operating free-air temperature

Operating case temperature

V_ID

T_A

11.5

-55

12

12.5

T_C

+125

NOTES:

1. V_CCmust be applied before or at the same time as V_PPand removed after or at the same time as V_PP. The deivce must not be inserted into or

removed from the board when V_PPor V_CCis applied.

2. V_PPcan be connected to V_CCdirectly (except in the program mode). V_CCsupply current in this case would be I_CC2+ I_PP1

.

ELECTRICAL CHARACTERISTICS OVER RECOMMENDED RANGES OF SUPPLY VOLTAGE

AND OPERATING FREE-AIR TEMPERATURE

TYP¹

TEST CONDITIONS

I_OH= -400µA

MIN

MAX

UNIT

PARAMETER

High-level output voltage

2.4

V

V_OH

V_OL

I_I

Low-level output voltage

Input current (leakage)

0.4

1

V

I_OL= 2.1mA

µA

mA

µA

V_I= 0V to 5.5V

V_O= 0V to V_CC

V_PP= V_CC= 5.5V

V_PP= 13V

Output current (leakage)

5

I_O

V_PPsupply current

100

50

1

I_PP1

I_PP2

V_PPsupply current (during program pulse)²

30

15

TTL-Input Level

V

_CC= 5.5V, E\=V_IH

_CC= 5.5V, E\=V_CC

I_CC1

V_CCsupply current (standby)

CMOS-Input Level

300

V

'27C256-12

'27C256-15

'27C256-17

'27C256-20,-25

E\=V_IL, V_CC=5.5V

I_CC2

V_CCsupply current (active)

25

mA

t_cycle= minimum, outputs

open

NOTES:

1. Typical values are at T_A=25°C and nominal voltages.

2. This parameter has been characterized at 25°C and is not tested.

Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.

AS27C256

Rev. 2.0 7/06

6

UVEPROM

AS27C256

Austin Semiconductor, Inc.

CAPACITANCE OVER RECOMMENDED RANGES OF SUPPLY VOLTAGE AND OPERAT-

ING FREE-AIR TEMPERATURE, f = 1MHz*

PARAMETER

TEST CONDITIONS TYP**

MAX

UNIT

6

10

pF

C_i

V_I= 0V

Input capacitance

10

14

pF

C_o

V_O= 0V

Output capacitance

* Capacitance measurements are made on a sample basis only.

** Typical values are at T_A= 25°C and nominal voltages.

SWITCHING CHARACTERISTICS OVER RECOMMENDED RANGES OF SUPPLY VOLT-

AGE AND OPERATING FREE-AIR TEMPERATURE^1,2

TEST

CONDITIONS^{1, 2}

-12

-15

PARAMETER

UNIT

MIN MAX MIN MAX

Access time from address

Access time from E\

120

40

150

50

ns

t_a(A)

t_a(E)

Output enable time from G\

t_en(G)R

see Figure 2

Disable time of output from G\ or E\,

whichever occurs first³

0

30

0

30

ns

t_dis

Output data valid time after change of

address, E\, or G\, whichever occurs first³

t_v(A)

TEST

CONDITIONS^{1, 2}

-17

-20

-25

PARAMETER

UNIT

MIN MAX MIN MAX MIN MAX

Access time from address

Access time from E\

170

50

200

60

250

60

ns

t_a(A)

t_a(E)

Output enable time from G\

t_en(G)R

see Figure 2

Disable time of output from G\ or E\,

whichever occurs first³

0

40

0

50

0

60

ns

t_dis

Output data valid time after change of

address, E\, or G\, whichever occurs first³

t_v(A)

NOTES:

1.Timing measurements are made at 2V for logic high and 0.8V for logic low (see figure 2).

2. Common test conditions apply for t_disexcept during programming.

3. Value calculated from 0.5V delta to measured output level. This parameter is only sampled and not 100% tested.

SWITCHING CHARACTERISTICS FOR PROGRAMMING:V_CC= 6.5V and V_PP= 12.75V (AMD

FLASHRITE ALGO),T_A= 25°C

PARAMETER

MIN

MAX

UNIT

Output disable time from G\

0

130

ns

t_dis(G)

Output enable time from G\

150

ns

t_en(G)W

Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.

AS27C256

Rev. 2.0 7/06

7

UVEPROM

AS27C256

Austin Semiconductor, Inc.

RECOMMENDED TIMING REQUIREMENTS FOR PROGRAMMING:V_CC= 6.5 and V_PP

12.75V (AMD FLASHRITE ALGO),T_A= 25°C (See Figure 2)

=

MIN

TYP

MAX

UNIT

Hold Time, Address

Hold Time, Data

0

µs

t_h(A)

t_h(D)

t_w(E)PR

t_su(A)

2

95

2

Pulse Duration, Initial Program

Setup Time, Address

Setup Time, G\

100

105

2

t_su(G)

Setup Time, E\

2

t_su(E)

Setup Time, Data

Setup Time, V_PP

2

t_su(D)

2

t_su(VPP)

Setup Time, V_CC

2

t_su(VCC)

PARAMETER MEASUREMENT INFORMATION

2.08V

R_L= 800Ω

Output Under Test

CL = 100 pF¹

NOTES:

1. C_Lincludes probe and fixture capacitance.

TheAC testing inputs are driven at 2.4V for logic high and 0.4V for logic low. Timing measurements are made

at 2V for logic high and 0.8V for logic low for both inputs and outputs.

FIGURE 2. LOAD CIRCUIT AND VOLTAGE WAVEFORMS

Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.

AS27C256

Rev. 2.0 7/06

8

UVEPROM

AS27C256

Austin Semiconductor, Inc.

FIGURE 3. READ-CYCLE TIMING

FIGURE 4. PROGRAM-CYCLE TIMING (FLASHRITE PULSE PROGRAMMING)

Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.

AS27C256

Rev. 2.0 7/06

9

UVEPROM

AS27C256

Austin Semiconductor, Inc.

MECHANICAL DEFINITION*

ASI Case #110 (Package Designator J)

D

S2

A

Q

L

E

e

b

S1

b2

eA

c

SMD Specifications

Symbol

MIN

---

MAX

0.232

0.026

0.065

0.018

1.490

0.610

A

b

0.014

0.045

0.008

---

b2

c

D

E

0.500

eA

e

0.600 BSC

0.100 BSC

L

0.125

0.015

0.005

0.200

0.060

---

Q

S1

S2

---

*All measurements are in inches.

Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.

AS27C256

Rev. 2.0 7/06

10

UVEPROM

AS27C256

Austin Semiconductor, Inc.

MECHANICAL DEFINITIONS*

ASI Case #208 (Package Designator ECA)

D1

A

L1

e

E1

E

See Detail A

L

D

b

DetailA

b1

SMD SPECIFICATIONS

SYMBOL

MIN

0.060

0.022

0.006

0.442

MAX

0.120

0.028

0.022

0.458

A

b

b1

D

D1

E

0.300 BSC

0.540

0.560

E1

e

0.400 BSC

0.050 BSC

L

0.045

0.075

0.055

0.095

L1

*All measurements are in inches.

Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.

AS27C256

Rev. 2.0 7/06

11

UVEPROM

AS27C256

Austin Semiconductor, Inc.

ORDERING INFORMATION

EXAMPLE: AS27C256-30JM/MIL

Device Number

Speed

Package Type

Operating Temp.

AS27C256

-55

-70

-90

-12

-15

-17

-20

-25

-30

J

*

EXAMPLE: AS27C256-15ECAM

Device Number

AS27C256

Speed

-55

Package Type

ECA

Operating Temp.

*

-70

-90

-12

-15

-17

-20

-25

-30

ECA

*PROCESS / OPERATING TEMPERATURE

M = Full Military Processing Per

MIL-PRF-3835, Class Q

-55^oC to +125^oC

I = Industrial Temperature Range

XT= Military Temperature Range

-40°C to +85°C

-55^oC to +125^oC

Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.

AS27C256

Rev. 2.0 7/06

12

UVEPROM

AS27C256

Austin Semiconductor, Inc.

SMD ORDERING INFORMATION

SMD

ASI PN

SPEED

200ns

250ns

300ns

170ns

150ns

120ns

90ns

PACKAGE

5962-8606301XA

5962-8606311XA

5962-8606302XA

5962-8606312XA

5962-8606303XA

5962-8606313XA

5962-8606304XA

5962-8606314XA

5962-8606305XA

5962-8606315XA

5962-8606306XA

5962-8606316XA

5962-8606307XA

5962-8606317XA

5962-8606308XA

5962-8606318XA

5962-8606309XA

5962-8606319XA

AS27C256 -20JM

AS27C256 -25JM

AS27C256 -30JM

AS27C256 -17JM

AS27C256 -15JM

AS27C256 -12JM

AS27C256 -90JM

AS27C256 -70JM

AS27C256 -55JM

600mil, 28LD. DIP

90ns

70ns

55ns

SMD

ASI PN

SPEED

200ns

250ns

300ns

170ns

150ns

120ns

90ns

PACKAGE

5962-8606301YA

5962-8606311YA

5962-8606302YA

5962-8606312YA

5962-8606303YA

5962-8606313YA

5962-8606304YA

5962-8606314YA

5962-8606305YA

5962-8606315YA

5962-8606306YA

5962-8606316YA

5962-8606307YA

5962-8606317YA

5962-8606308YA

5962-8606318YA

5962-8606309YA

5962-8606319YA

AS27C256 -20ECA

AS27C256 -25ECA

AS27C256 -30ECA

AS27C256 -17ECA

AS27C256 -15ECA

AS27C256 -12ECA

AS27C256 -90ECA

AS27C256 -70ECA

AS27C256 -55ECA

32-LD. 0.450 x 0.550, LCC

90ns

70ns

55ns

Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.

AS27C256

Rev. 2.0 7/06

13

型号	制造商	描述	价格	文档
AS27C256-20ECAI	AUSTIN	256K UVEPROM UV Erasable Programmable Read-Only Memory	获取价格
AS27C256-20ECAM	AUSTIN	256K UVEPROM UV Erasable Programmable Read-Only Memory	获取价格
AS27C256-20ECAM/Q	MICROSS	UVPROM, 32KX8, 200ns, CMOS, CQCC32, 0.450 X 0.550 INCH, WINDOWED, CERAMIC, LCC-32	获取价格
AS27C256-20ECAXT	AUSTIN	256K UVEPROM UV Erasable Programmable Read-Only Memory	获取价格
AS27C256-20JI	AUSTIN	256K UVEPROM UV Erasable Programmable Read-Only Memory	获取价格
AS27C256-20JM	AUSTIN	256K UVEPROM UV Erasable Programmable Read-Only Memory	获取价格
AS27C256-20JXT	AUSTIN	256K UVEPROM UV Erasable Programmable Read-Only Memory	获取价格
AS27C256-25ECA	AUSTIN	256K UVEPROM UV Erasable Programmable Read-Only Memory	获取价格
AS27C256-25ECAI	AUSTIN	256K UVEPROM UV Erasable Programmable Read-Only Memory	获取价格
AS27C256-25ECAM	AUSTIN	256K UVEPROM UV Erasable Programmable Read-Only Memory	获取价格

AS27C256-20ECA

AS27C256-20ECA 概述

AS27C256-20ECA 数据手册

AS27C256-20ECA 相关器件

AS27C256-20ECA 相关文章

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