Schottky Barrier Rectifiers
Comchip
S M D D i o d e S p e c i a l i s t
SR2030CT-G Thru. SR20150CT-G
Voltage: 30 to 150 V
Current: 20.0 A
RoHS Device
Features
TO-220AB
-Metal of silicon rectifier, majority carrier conduction.
-Guard ring for transient protection.
-Low power loss, high efficiency.
0.187(4.80)
0.135(3.44)
0.103(2.62)
0.173(4.40)
0.055(1.40)
0.047(1.20)
0.153(3.90)
0.146(3.70)
0.413(10.50)
0.347( 9.50)
-High current capability, low VF.
-High surge capacity.
0.270(6.90)
0.230(5.80)
0.610(15.50)
0.583(14.80)
-For use in low voltage, high frequency inverters,
free wheeling,and polarity protection applications.
Mechanical Data
0.177
(4.5)
0.583(14.80)
0.531(13.50)
0.057(1.45)
0.045(1.14)
MAX
-Case: TO-220AB, molded plastic
-Epoxy: UL 94-V0 rate flame retardant.
-Polarity: As marked on the body.
-Mounting position: Any
0.024(0.60)
0.012(0.30)
0.102(2.60)
0.091(2.30)
0.043(1.10)
0.032(0.80)
0.138
(3.50)
MAX
-Weight: 2.24 grams
Dimensions in inches and (millimeter)
Electrical Characteristics (at TA=25°C unless otherwise noted)
Ratings at 25°C ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load derate current by 20%.
SR
2030CT-G 2040CT-G 2050CT-G 2060CT-G 2080CT-G 20100CT-G 20150CT-G
SR
SR
SR
SR
SR
SR
Symbol
Parameter
Unit
Maximum recurrent peak reverse voltage
Maximum RMS voltage
V
RRM
RMS
30
21
30
40
28
40
50
35
50
60
42
60
80
56
80
100
70
150
105
150
V
V
V
V
Maximum DC blocking voltage
V
DC
100
Maximum average forward rectified
I
(AV)
20.0
200
A
current ( See Fig.1 )
@ Tc= 95°C
Peak forward surage current ,8.3ms single
half sine-wave super imposed on rated load
(JEDEC method)
IFSM
A
V
Peak forward voltage at 10.0A DC (Note 1)
0.55
0.70
0.85
0.95
V
F
@ TJ= 25°C
1.0
50
Maximum DC Reverse Current
at Rate DC Blocking Voltage
IR
mA
@ TJ= 100°C
Typical junction capacitance (Note2)
Typical thermal resistance (Note3)
Operating temperature range
Storage temperature range
pF
°C/W
°C
C
J
600
2.0
R
θJC
TJ
-55 to +150
-55 to +150
TSTG
°C
NOTES:
1. 300us pulse width,2% duty cycle.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
3. Thermal resistance junction to case.
REV:A
Page 1
QW-BB056
Comchip Technology CO., LTD.
杰理 JL7096D 芯片加持，vivo 半入耳耳机成降噪新标杆之作
2026 年 ASIC 或逆袭 GPU，定制化算力竞赛进入决胜阶段
Buck 电路空载电感发热：原因探究与解决方案
HBM 技术爆炸式增长，助力 AI 计算迈向新高度
概述
规格参数
数据手册
