概述
数据手册2N2329 概述
SILICON THYRISTORS 硅闸流体
2N2329 数据手册
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SILICON THYRISTORS
All-diffused PNPN thyristors designed for grating operation in mA/µA signal
or detection circuits
Compliance to RoHS.
MAXIMUM RATINGS (*)
TJ=125°C unless otherwise noted, RGK=1000Ω
Symbol
VRSM(REP)
Ratings
2N2327
2N2328
2N2329
Unit
Peak reverse blocking voltage (1)
250
350
300
400
400
500
V
V
A
VRSM(NON-
REP)
Non-repetitive peak blocking reverse
voltage (t<5.0 ms)
Forward Current RMS
(all conduction angles)
Peak Surge Current
(One-Half Cycle, 60Hz)
No Repetition Until Thermal Equilibrium
is Restored.
1.6
15
IT(RMS)
A
ITSM
Peak Gate Power – Forward
Average Gate Power - Forward
Peak Gate Current – Forward
Peak Gate Voltage - Forward
Peak Gate Voltage - Reverse
0.1
0.01
0.1
PGM
W
W
A
PG(AV)
IGM
VGFM
VGRM
6.0
6.0
V
V
Operating Junction Temperature Range
Storage Temperature Range
TJ
TSTG
-65 to +125
-65 to +150
°C
12/11/2012
COMSET SEMICONDUCTORS
1 | 3
2N2327 thur 2N2329
ELECTRICAL CHARACTERISTICS (*)
TJ=25°C unless otherwise noted, RGK=1000Ω
Symbol
Ratings
2N2327
2N2328
2N2329
Unit
Peak Forward Blocking Voltage
(1)
VDRM
IRRM
IDRM
Min :
250
300
400
V
Peak Reverse Blocking Current
(Rated VDRM, TJ =125°C)
Peak Forward Blocking Current
(Rated VDRM, TJ =125°C)
Forward « on » Voltage
IT =1.0 A Peak
Max : 100
Max : 100
Max : 1.5
Max : 2.0
Max : 200
Max : 350
Max : 0.8
Max : 1.0
Min : 0.1
Max : 2.0
Max : 3.0
Min : 0.15
µA
µA
VT
V
IT =1.0 A Peak
TC =85°C
Gate Trigger Current (2)
Anode Voltage=6.0 Vdc, RL=100Ω
Anode Voltage=6.0 Vdc, RL=100Ω
TC=-65°C
Gate Trigger Voltage
Anode Voltage=6.0 V, RL=100Ω
Anode Voltage=6.0 V, RL=100Ω
TC=-65°C
VDRM = Rated, RL=100Ω
TJ=125°C
Holding Current
Anode Voltage=6.0 V
Anode Voltage=6.0 V
TC=-65°C
Anode Voltage=6.0 V
TC=125°C
IGT
µA
VGT
V
IH
mA
(*) JEDEC Registered Values
(1) VRSM and VDRM can be applied for all types on a continuous dc basis without incurring damage.
(2) RGK current is not included in measurement.
12/11/2012
COMSET SEMICONDUCTORS
2 | 3
2N2327 thur 2N2329
MECHANICAL DATA CASE TO-39
DIMENSIONS (mm)
min
8.50
7.74
6.09
0.40
-
max
9.39
8.50
6.60
0.53
0.88
2.66
5.33
0.86
1.02
-
A
B
C
D
E
F
G
H
J
2.41
4.82
0.71
0.73
12.70
42°
K
L
48°
Pin 1 :
kathode
Pin 2 :
Pin 3 :
Case :
Gate
Anode
anode
Revised October 2012
Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change
without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any and
all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as critical
components in life support devices or systems.
www.comsetsemi.com
12/11/2012
info@comsetsemi.com
COMSET SEMICONDUCTORS
3 | 3
2N2329 相关器件
| 型号 | 制造商 | 描述 | 价格 | 文档 |
| 2N2329A | MICROSEMI | SILICON CONTROLLED RECTIFIER | 获取价格 |
|
| 2N2329A | NJSEMI | SILICON CONTROLLED RECTIFIERS | 获取价格 |
|
| 2N2329A | DIGITRON | Descriptive : Silicon Controlled Rectifier; Peak Repetitive Reverse Voltage : 400; Peak Repetitive | 获取价格 |
|
| 2N2329AS | MICROSEMI | SILICON CONTROLLED RECTIFIER | 获取价格 |
|
| 2N2329E3 | MICROSEMI | Silicon Controlled Rectifier, 0.3454A I(T)RMS, 400V V(DRM), 400V V(RRM), 1 Element, TO-5, TO-5, 3 PIN | 获取价格 |
|
| 2N2329LEADFREE | CENTRAL | Silicon Controlled Rectifier, 1.6A I(T)RMS, 400V V(DRM), 400V V(RRM), 1 Element, TO-39, HERMETIC SEALED PACKAGE-3 | 获取价格 |
|
| 2N2329S | MICROSEMI | SILICON CONTROLLED RECTIFIER | 获取价格 |
|
| 2N2329SE3 | MICROSEMI | Silicon Controlled Rectifier, 0.3454A I(T)RMS, 400V V(DRM), 400V V(RRM), 1 Element, TO-5, TO-5, 3 PIN | 获取价格 |
|
| 2N2330 | ETC | TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 500MA I(C) | TO-5 | 获取价格 |
|
| 2N2331 | ETC | TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 500MA I(C) | TO-18 | 获取价格 |
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