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2N685

更新时间：2025-07-14 11:03:59
品牌：DIGITRON
描述：Descriptive : Silicon Controlled Rectifier; Peak Repetitive Reverse Voltage : 200; Peak Repetitive

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2N685 概述

Descriptive : Silicon Controlled Rectifier; Peak Repetitive Reverse Voltage : 200; Peak Repetitive

2N685 数据手册

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2N681-2N692,  
2N5204-2N5207  
SILICON CONTROLLED RECTIFIER  
High-reliability discrete products  
and engineering services since 1977  
FEATURES  
•
•
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.  
Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.  
MAXIMUM RATINGS  
Rating  
RMS On-State Current  
Average On-State Current  
@ TC  
Peak One Cycle Surge @ 50 Hz  
Peak One Cycle Surge @ 60 Hz  
Fusing @ 50 Hz  
Symbol  
IT(RMS)  
IT(AV)  
2N681-2N692  
2N5204-2N5207  
Unit  
A
A
°C  
A
A
25  
16  
35  
22  
TC  
-65 to +65  
145  
-40 to +40  
285  
ITSM  
I2t  
150  
103  
300  
410  
A2s  
Fusing @ 60 Hz  
94  
375  
Gate Current to Trigger  
Typical Critical dv/dt Exponential to VDRM  
Critical Rate of Rise  
Junction Temperature  
Storage Temperature  
IGT  
dv/dt  
di/dt  
TJ  
40  
-
40  
100  
100  
mA  
V/µs  
A/µs  
°C  
75-100  
-65 to 125  
-65 to 150  
-65 to 125  
-65 to 150  
Tstg  
°C  
VOLTAGE RATINGS (Applied gate voltage zero or negative)  
VRRM, VDRM  
VRSM  
Maximum Repetitive Peak Reverse and  
Maximum Non-Repetitive Peak Reverse Voltage  
Off-State Voltage  
(V)  
tp ≤ 5 ms  
(V)  
Part Number  
TJ = -65 to +125°C  
TJ = -65 to +125°C  
2N681  
25  
35  
2N682  
2N683  
2N685  
2N687  
2N688  
2N689  
2N690  
2N691  
2N692  
50  
100  
200  
75  
150  
300  
300  
400  
500  
600  
700  
800  
400  
500  
600  
720  
840  
960  
TJ = -65 to 125°C  
600  
TJ = -65 to 125°C  
720  
2N5204  
2N5205  
2N5206  
2N5207  
800  
1000  
1200  
960  
1200  
1440  
Rev. 20220407  
2N681-2N692,  
2N5204-2N5207  
SILICON CONTROLLED RECTIFIER  
High-reliability discrete products  
and engineering services since 1977  
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)  
Symbol  
Characteristics  
2N681-2N692  
2N5204-2N5207  
Units  
Conditions  
IT(RMS)  
Maximum RMS On-State Current  
25  
35  
A
Maximum Average On-State  
Current  
IT(AV)  
16  
22  
A
180° half sine wave conduction  
@ TC =  
-65 to +65  
-40 to +40  
°C  
50 Hz half cycle sine  
wave or 6 ms  
rectangular pulse  
60 Hz half cycle sine  
wave or 5 ms  
rectangular pulse  
Following any  
rated load  
condition and with  
rated VRRM applied  
following surge  
145  
150  
170  
285  
300  
340  
ITSM  
Maximum Peak One Cycle,  
Non-Repetitive Surge Current  
A
50 Hz half cycle sine  
wave or 6 ms  
rectangular pulse  
60 Hz half cycle sine  
wave or 5 ms  
rectangular pulse  
Same conditions  
as above except  
with VRRM applied  
following  
180  
103  
94  
355  
410  
375  
surge = 0  
t = 10 ms  
Rated VRRM applied  
following surge,  
initial  
I2t  
Maximum I2t Capability, for Fusing  
A2s  
A2s  
t = 8.3 ms  
TJ = 125°C  
145  
135  
580  
530  
t = 10 ms  
t = 8.3 ms  
VRRM = 0 following  
surge, initial  
TJ = 125°C  
Maximum I2t Capability for  
Individual Device Fusing  
I2t  
t = 0.1 to 10ms initial  
TJ ≤ 125°C,  
VRRM following surge =  
0
Maximum I2√t Capability for  
I2√t  
1450  
5800  
A2√s  
Individual Device Fusing (1)  
TJ = 25°C, IT(AV)  
=
16A(50A peak) –  
2N681  
IT(AV) = 22A (70A) peak  
– 2N5204  
Anode supply = 24V,  
initial IT= 1.0A  
VTM  
Maximum Peak On-State Voltage  
Maximum Holding Current  
2
2.3  
V
IH  
20 @ 25°C  
200 @-40°C  
mA  
BLOCKING  
TJ = 125°C  
100 typical  
250 typical  
100  
250  
V/µs  
exponential to 100%  
rated VDRM  
TJ = 125°C  
exponential to 67%  
rated VDRM  
Minimum Critical Rate of Rise of  
Off-State Voltage  
dv/dt  
Rev. 20220407  
2N681-2N692,  
2N5204-2N5207  
SILICON CONTROLLED RECTIFIER  
High-reliability discrete products  
and engineering services since 1977  
Symbol  
Characteristics  
2N681-2N692  
2N5204-2N5207  
Units  
Conditions  
(-)  
IR(-) & ID  
Maximum Reverse and Off-State  
Current  
IR(AV) & ID(AV)  
(average values)  
IRM & IDM  
(peak values)  
mA  
-
-
VRRM & VDRM  
=
-
6.5  
6.0  
5.0  
4.0  
3.0  
2.5  
2.25  
2.0  
-
25 to 150V  
200 & 250V  
300V  
-
-
-
400V  
TJ = 125°C, gate open circuited  
-
500V  
3.3  
-
600V  
700V  
2.5  
2.0  
1.7  
800V  
1000V  
1200V  
-
SWITCHING  
td  
TC = 25°C, VDM = rated VDRM, ITM = 10A  
dc resistive circuit. Gate pulse: 10 V,  
40Ω source, tp = 6µs, tr = 0.1µs  
Typical Delay Time  
1
1
µs  
Maximum Non-Repetitive Rate of  
Rise of Turned-On Current  
VDM = 25 to 600 V  
TC = 125°C, VDM = rated VDRM, ITM = 2 x  
di/dt, gate pulse: 20V, 15 Ω, tp = 6µs,  
tr = 0.1 µs maximum  
100  
75  
-
-
-
A/µs  
di/dt  
VDM = 700 to 800 V  
TC = 125°C, VDM = 600V, ITM = 200A @  
400Hz max. Gate pulse: 20V, 15Ω,  
tp = 6µs, tr = 0.1µs max.  
100  
TRIGGERING  
PGM  
tp ≤ 5ms – 2N681  
tp ≤ 500µs – 2N5204  
Maximum Peak Gate Power  
5
0.5  
2
60  
0.5  
2
W
W
A
PG(AV)  
Maximum Average Gate Power  
Maximum Peak Positive Gate  
Current  
IGM  
Maximum Peak Positive Gate  
Voltage  
+VGM  
-VGM  
10  
5
-
V
V
Maximum Peak Negative Gate  
Voltage  
5
TC = min rated value. Max. required  
gate trigger current is the lowest  
value which will trigger all units with  
6V anode to cathode  
80  
80  
mA  
Maximum Required DC Gate  
Current to Trigger  
IGT  
40  
18.5  
30  
40  
20  
30  
TC = 25°C  
TC = 125°C  
Typical DC Gate Current to Trigger  
TC = 25°C, 6V anode to cathode  
Rev. 20220407  
2N681-2N692,  
2N5204-2N5207  
SILICON CONTROLLED RECTIFIER  
High-reliability discrete products  
and engineering services since 1977  
Symbol  
Characteristics  
2N681-2N692  
2N5204-2N5207  
Units  
Conditions  
TC = -65°C. Max. required gate trigger  
voltage is the lowest value which will  
trigger all units with 6V anode to  
cathode  
3
3
V
Maximum Required DC Gate  
Voltage to Trigger  
VGT  
2
2
TC = 25°C  
Typical DC Gate Voltage to Trigger  
1.5  
1.5  
TC = 25°C 6V anode to cathode  
TC = 125°C. Max. gate voltage not to  
trigger is the maximum value which  
will not trigger any unit with rated VDRM  
anode to cathode  
Maximum DC Gate Voltage Not to  
Trigger  
VGD  
0.25  
0.25  
V
Note 1: I2t for time tx ≈ I2√t ● √tx  
THERMAL –MECHANICAL CHARACTERISTICS  
2N5204-2N5207  
-40 to 125  
-40 to 125  
1.5  
Symbol  
Characteristics  
2N681-2N692  
-65 to 125  
-65 to 125  
1.5  
Units  
°C  
Conditions  
Operating Junction Temperature  
Range  
TJ  
Tstg  
Storage Temperature Range  
°C  
Maximum Internal Thermal  
Resistance, Junction to Case  
RthJC  
°C/W  
DC operation  
Mounting surface smooth, flat and  
greased  
RthCS  
Thermal Resistance, Case to Sink  
0.35  
0.35  
°C/W  
20 (27.5)  
lbf ∙ in  
kgf ∙ m  
N ∙ m  
Lubricated threads (non-lubricated  
threads)  
Mounting Torque to nut ±10%  
0.23 (0.32)  
2.3 (3.1)  
25  
lbf ∙ in  
kgf ∙ m  
N ∙ m  
Mounting Torque to Device  
Approximate Weight  
0.29  
Lubricated threads  
2.8  
wt  
14 (0.49)  
14 (0.5)  
g (oz.)  
Rev. 20220407  
2N681-2N692,  
2N5204-2N5207  
SILICON CONTROLLED RECTIFIER  
High-reliability discrete products  
and engineering services since 1977  
MECHANICAL CHARACTERISTICS  
Case  
TO-48A  
Marking  
Pin out  
Alpha-numeric  
See below  
Rev. 20220407  
2N681-2N692,  
2N5204-2N5207  
SILICON CONTROLLED RECTIFIER  
High-reliability discrete products  
and engineering services since 1977  
Rev. 20220407  
2N681-2N692,  
2N5204-2N5207  
SILICON CONTROLLED RECTIFIER  
High-reliability discrete products  
and engineering services since 1977  
Rev. 20220407  
2N681-2N692,  
2N5204-2N5207  
SILICON CONTROLLED RECTIFIER  
High-reliability discrete products  
and engineering services since 1977  
Rev. 20220407  
2N681-2N692,  
2N5204-2N5207  
SILICON CONTROLLED RECTIFIER  
High-reliability discrete products  
and engineering services since 1977  
Rev. 20220407  

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