JANTXV2N4150中文资料_数据手册_规格书

The documentation and process conversion

measures necessary to comply with this revision

shall be completed by 5 October 2002.

INCH-POUND

MIL-PRF-19500/394G

5 July 2002

SUPERSEDING

MIL-PRF-19500/394F

23 April 2001

PERFORMANCE SPECIFICATION

SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER SWITCHING

TYPES: 2N4150, 2N5237, 2N5238, 2N4150S, 2N5237S, AND 2N5238S

JAN, JANTX, JANTXV, JANS, JANHC AND JANKC

This specification is approved for use by all Departments

and Agencies of the Department of Defense.

1. SCOPE

1.1 Scope. This specification covers the performance requirements for NPN, silicon, low-power, high voltage

transistors. Four levels of product assurance are provided for each encapsulated device type as specified in

MIL-PRF-19500 and two levels of product assurance are provided for each unencapsulated device type.

1.2 Physical dimensions. See figure 1 (TO- 5) and figures 2 and 3 (JANHC and JANKC).

1.3 Maximum ratings.

Types

P

T

P

V

CBO

V

CEO

V

EBO

I

T

and

R_qJC

(max)

R_qJA

(min)

T (1)

T (2)

C

STG

T

=

T

= +25°C

A

J

C

+25°C

W

V dc

A dc

°C

°C/mW

2N4150, S

2N5237, S

2N5238, S

1.0

5.0

100

150

200

70

120

170

10

-65 to +200

.020

.175

(1) Derate linearly 5.7 mW/°C for T_A> +25°C.

(2) Derate linearly 50 mW/°C for T_C> +100°C.

Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in

improving this document should be addressed to: Defense Supply Center, Columbus, ATTN: DSCC-VAC, P.O.

Box 3990, Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal (DD Form

1426) appearing at the end of this document or by letter.

AMSC N/A

FSC 5961

DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.

MIL-PRF-19500/394G

1.4 Primary electrical characteristics.

h_FE2(1)

h_FE3(1)

C_obo

h_fe

V_BE(sat)(1)

V_CE(sat)

Limits

I_C= 5 A dc

V_CE= 5 V dc V_CE= 5 V dc

I_C= 10 A dc

I_E= 0

V_CB= 10 V dc

100 kHz £ f £ 1 MHz

pF

I_C= 0.2 A dc

V_CE= 10 V dc

f = 10 MHz

I_C= 5 A dc

I_B= 0.5 A dc

I_C= 5 A dc

I_B= 0.5 A dc

V dc

1.5

V dc

0.6

Min

Max

40

120

10

1.5

7.5

350

(1) Pulsed, (see 4.5.1).

2. APPLICABLE DOCUMENTS

2.1 General. The documents listed in this section are specified in sections 3 and 4 of this specification. This

section does not include documents cited in other sections of this specification or recommended for additional

information or as examples. While every effort has been made to ensure the completeness of this list, document

users are cautioned that they must meet all specified requirements documents cited in sections 3 and 4 of this

specification, whether or not they are listed.

2.2 Government documents.

2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a

part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are

those listed in the issue of the Department of Defense Index of Specifications and Standards (DODISS) and

supplement thereto, cited in the solicitation (see 6.2).

SPECIFICATION

DEPARTMENT OF DEFENSE

MIL-PRF-19500 - Semiconductor Devices, General Specification for.

STANDARD

DEPARTMENT OF DEFENSE

MIL-STD-750 - Test Methods for Semiconductor Devices.

(Unless otherwise indicated, copies of the above specifications, standards, and handbooks are available from the

Document Automation and Production Services (DAPS), Building 4D (DPM–DODSSP), 700 Robbins Avenue,

Philadelphia, PA 19111-5094.)

2.3 Order of precedence. In the event of a conflict between the text of this document and the references cited

herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws

and regulations unless a specific exemption has been obtained.

2

MIL-PRF-19500/394G

FIGURE 1. Physical dimensions .

3

MIL-PRF-19500/394G

Dimensions

Symbol

Inches

Millimeters

Min

7.75

6.10

0.23

8.51

Notes

5

Min

.305

.240

.009

.335

Max

.335

.260

.041

.370

Max

8.51

6.60

1.04

9.40

CD

CH

h

HD

LC

LD

LL

LU

L₁

L₂

Q

r

TL

TW

a

.200 TP

5.08 TP

6

7

.016

.250

.021

0.41

0.53

See notes 14 and 15

0.41

.019

.050

0.48

1.27

7

6.35

7

13

11,12

3

10

4, 6, 8, 9

.050

.010

.045

.034

1.27

0.25

1.14

0.86

.029

.028

0.74

0.71

45° TP

NOTES:

1. Dimensions are in inches.

2. Metric equivalents are given for general information only.

3. Symbol TL is measured from HD maximum.

4. Lead number 4 omitted on this variation.

5. CD shall not vary more than .010 inch (0.25 mm) in zone P. This zone is controlled for automatic handling.

6. Leads at gauge plane .054 inch (1.37 mm) + .001 (0.03 mm) - .000 inch (0.00 mm) below seating plane shall

be within .007 inch (0.18 mm) radius of true position (TP) relative to the tab. The device may be measured by

direct methods.

7. LD applies between L₁and L₂. Dimension LD applies between L₂and LL minimum. Lead diameter shall

not exceed .042 inch (1.07 mm) within L₁and beyond LL minimum.

8. Lead designation is as follows: 1 - emitter; 2 - base; 3 - collector.

9. Lead number three is electrically connected to case.

10. Beyond r maximum, TW shall be held for a minimum length of .011 inch (0.28 mm).

11. r (radius) applies to both inside corners of tab.

12. Tab shown omitted.

13. Details of outline in this zone optional.

14. For transistor types 2N4150S, 2N5237S, and 2N5238S, dimension LL = 0.500 inch (12.70 mm) minimum,

and 0.750 inch mm) maximum.

15. For transistor types 2N4150, 2N5237, and 2N5238, dimension LL = 1.500 inch (38.10 mm) minimum, and

1.750 inches (44.45 mm) maximum.

FIGURE 1. Physical dimensions - Continued.

4

MIL-PRF-19500/394G

NOTES:

1. Chip size:

120 x 120 mils ± 2 mils.

2. Chip thickness:

3. Top metal:

4. Back metal:

10 ±1.5mils nominal.

Aluminum 30,000Å minimum, 33,000Å nominal.

A. Al/Ti/Ni/Ag12kÅ/3kÅ/7kÅ/7kÅmin.15kÅ/5kÅ/10kÅ/10kÅ nominal.

B. Gold 2,500Å minimum, 3,000Å nominal.

Collector.

5. Backside:

6. Bonding pad:

B = 52 x 12 mils, E = 84 x 12 mils.

FIGURE 2. JANHC and JANKC A-version die dimensions.

5

MIL-PRF-19500/394G

NOTES:

1. Die size:

.155 x .155 inch (3.937 x 3.937 mm).

2. Die thickness:

3. Base pad:

.008 ±.0016 inch (0.2032 ±0.04064 mm).

.012 x .090 inch (0.3048 x 2.286 mm).

.012 x .090 inch.

Gold, 2400 ±720 Ang.

Aluminum, 37500 ±7500 Ang.

Collector.

4. Emitter pad:

5. Back metal:

6. Top metal:

7. Back side:

8. Glassivation:

SiO₂, 7500 ± 1500 Ang.

FIGURE 3. JANHC and JANKC B-version die dimensions.

6

MIL-PRF-19500/394G

3. REQUIREMENTS

3.1 General. The requirements for acquiring the product described herein shall consist of this document and

MIL-PRF-19500.

3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a

manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturer's list (QML)

before contract award (see 4.2 and 6.3).

3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as

specified in MIL-PRF-19500.

3.4 Interface and physical dimensions. The interface and physical dimensions shall be as specified in

MIL-PRF-19500, on figure 1 (TO- 5) and on figures 2 and 3 (JANHC and JANKC) herein.

3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein.

Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2).

3.4.2 Construction. These devices shall be constructed in a manner and using materials which enable the

devices to meet the applicable requirements of MIL-PRF-19500 and this document.

3.5 Marking. Marking shall be in accordance with MIL-PRF-19500.

3.6 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance

characteristics are as specified in 1.3, 1.4, and table I herein.

3.7 Electrical test requirements. The electrical test requirements shall be the subgroups specified in 4.4.2 and

4.4.3 herein.

3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and

shall be free from other defects that will affect life, serviceability, or appearance.

4. VERIFICATION

4.1 Classification of inspections. The inspection requirements specified herein are classified as follows:

a. Qualification inspection (see 4.2).

b. Screening (see 4.3).

c. Conformance inspection (see 4.4).

4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified

herein.

4.2.1 JANHC and JANKC qualification. JANHC and JANKC qualification inspection shall be in accordance with

MIL-PRF-19500.

* 4.2.2 Group E qualification. Group E qualification shall be performed herein for qualification or requalification

only. In case qualification was awarded to a prior revision of the associated specification that did not request the

performance of table II tests, the tests specified in table II herein shall be performed by the first inspection lot to this

revision to maintain qualification.

7

MIL-PRF-19500/394G

* 4.3 Screening (JANS, JANTXV, and JANTX levels only). Screening shall be in accordance with table IV of

MIL-PRF-19500 and as specified herein. The following measurements shall be made in accordance with table I

herein. Devices that exceed the limits of table I herein shall not be acceptable.

Screen (see table IV

of MIL-PRF-19500)

Measurement

JANS level

JANTX and JANTXV levels

3c

Thermal impedance, method 3131 of

MIL-STD-750, (see 4.3.3).

Thermal impedance, method 3131 of MIL-

STD-750, (see 4.3.3).

7

9

Hermetic seal (optional) (1)

Not applicable

I

and h

FE1

CBO2

10

11

48 hours minimum

I

and h

FE1

I

; h ; DI

CBO2 FE1 CB02 = 100

CBO2

percent of initial value or 50 nA dc,

whichever is greater;

Dh

= ± 15 percent of initial value.

FE1

12

13

See 4.3.2

240 hours minimum

See 4.3.2

80 hours minimum

Subgroups 2 and 3 of table I herein;

Subgroup 2 of table I herein;

DI

= 100 percent of initial value

DI

= 100 percent of initial value

CB02

or 50 nA dc, whichever is greater;

Dh = ± 15 percent of initial value.

CB02

or 50 nA dc, whichever is greater;

Dh = ± 15 percent of initial value.

FE1

(1) Hermetic seal test shall be performed in either screen 7 or screen 14.

4.3.1 Screening (JANHC and JANKC). Screening of JANHC and JANKC die shall be in accordance with

MIL-PRF-19500, “Discrete Semiconductor Die/Chip Lot Acceptance”. Burn-in duration for the JANKC level follows

JANS requirements; the JANHC follows JANTX requirements.

4.3.2 Power burn-in conditions. Power burn-in conditions are as follows: V_CB= 10 Vdc. Power shall be applied

to achieve T_J=135°C minimum using a minimum P_D= 75 percent of P_Tmaximum rated as defined in 1.3.

8

MIL-PRF-19500/394G

4.3.3 Thermal impedance (Z_qJXmeasurements). The Z_qJXmeasurements shall be performed in accordance with

method 3131 of MIL-STD-750.

a. I_Mmeasurement current...................... 10 mA.

b. I_Hforward heating current.................... 1 A.

c. t_Hheating time..................................... 10 - 30 ms.

d. t_mdmeasurement delay time............... 30 - 60 ms.

e. V_CEcollector-emitter voltage .............. 16 V dc minimum.

The maximum limit for Z

_qJXunder these test conditions are Z_qJX(max) = 12°C/W.

4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500 and as

specified herein. If alternate screening is being performed in accordance with MIL-PRF-19500, a sample of

screened devices shall be submitted to and pass the requirements of group A1 and A2 inspection only (table VIb,

group B, subgroup 1 is not required to be performed again if group B has already been satisfied in accordance with

4.4.2).

4.4.1 Group A inspection. Group A inspection shall be conducted with MIL-PRF-19500, and table I herein.

4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the tests and conditions

specified for subgroup testing in table VIa (JANS) of MIL-PRF-19500 and 4.4.2.1 herein. Electrical measurements

(end-points) and delta requirements shall be in accordance with table I, group A, subgroup 2 and 4.5.3 herein: delta

requirements only apply to subgroups, B4, and B5. See 4.4.2.2 herein for JAN, JANTX, and JANTXV group B

testing. Electrical measurements (end-points) and delta requirements for JAN, JANTX, and JANTXV shall be after

each step in 4.4.2.2 and shall be in accordance with table I, group A, subgroup 2 and 4.5.3 herein.

* 4.4.2.1 Group B inspection, table VIa (JANS) of MIL-PRF-19500.

Subgroup

Method

Condition

B4

B5

1037

1027

V_CB= 10 V dc.

(Note: If a failure occurs, resubmission shall be at the test conditions of the

original sample). V_CB= 10 V dc; P_D³ 100 percent of maximum rated P_T(see

1.3).

Option 1: 96 hours minimum, sample size in accordance with table VIa of

MIL-PRF-19500, adjust T_Aor P_Dto achieve T_J= +275°C minimum.

Option 2: 216 hours., sample size = 45, c = 0; adjust T_Aor P_Dto achieve T_J=

+225°C minimum.

9

MIL-PRF-19500/394G

4.4.2.2 Group B inspection, (JAN, JANTX, and JANTXV). Separate samples may be used for each step. In the

event of a group B failure, the manufacturer may pull a new sample at double size from either the failed assembly lot

or from another assembly lot from the same wafer lot. If the new “assembly lot” option is exercised, the failed

assembly lot shall be scrapped.

Subgroup

1

Method

1039

Condition

Steady-state life: Test condition B, 340 hours min., V_CB= 10 - 30 V dc, power

shall be applied to achieve T_J= +150°C minimum using a minimum of P_D= 75

percent of maximum rated P_Tas defined in 1.3. n = 45 devices, c = 0.

2

3

1039

1032

The steady-state life test of step 1 shall be extended to 1,000 hrs for each die

design. Samples shall be selected from a wafer lot every twelve months of wafer

production. Group B step 2 shall not be required more than once for any single

wafer lot. n = 45, c = 0.

High-temperature life (non-operating), t = 340 hours, T_A= +200°C. n = 22, c = 0.

4.4.2.3 Group B sample selection. Samples selected from group B inspection shall meet all of the following

requirements:

a. For JAN, JANTX, and JANTXV samples shall be selected randomly from a minimum of three wafers (or

from each wafer in the lot) from each wafer lot. For JANS, samples shall be selected from each inspection

lot. See MIL-PRF-19500.

b. Must be chosen from an inspection lot that has been submitted to and passed group A, subgroup 2,

conformance inspection. When the final lead finish is solder or any plating prone to oxidation at high

temperature, the samples for life test (subgroups B4 and B5 for JANS, and group B for JAN, JANTX, and

JANTXV) may be pulled prior to the application of final lead finish.

4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the tests and conditions

specified for subgroup testing in table VII of MIL-PRF-19500, and in 4.4.3.1 (JANS).and 4.4.3.2 (JAN, JANTX, and

JANTXV) herein for group C testing. Electrical measurements (end-points) and delta requirements shall be in

accordance with table I, group A, subgroup 2 and 4.5.3 herein, delta measurements apply to subgroup C6.

4.4.3.1 Group C inspection, table VII (JANS) of MIL-PRF-19500.

Subgroup

C2

Method

2036

Condition

Test condition E.

C6

1026

1,000 hours at V_CB= 10 V dc; power shall be applied to achieve T_J= +150°C

minimum and a minimum of P_D= 75 percent of maximum rated P_Tas defined in

1.3.

4.4.3.2 Group C inspection, table VII (JAN, JANTX, and JANTXV) of MIL-PRF-19500.

Subgroup

C2

Method

2036

Condition

Test condition E.

*

C5

C6

3131

See 4.5.2, R

.

qJC

Not applicable.

10

MIL-PRF-19500/394G

4.4.3.3 Group C sample selection. Samples for subgroups in group C shall be chosen at random from any

inspection lot containing the intended package type and lead finish procured to the same specification which is

submitted to and passes group A tests for conformance inspection. When the final lead finish is solder or any

plating prone to oxidation at high temperature, the samples for C6 life test may be pulled prior to the application of

final lead finish. Testing of a subgroup using a single device type enclosed in the intended package type shall be

considered as complying with the requirements for that subgroup.

* 4.4.4 Group E inspection. Group E inspection shall be conducted in accordance with the conditions specified for

subgroup testing in appendix E, table IX of MIL-PRF-19500 and as specified herein. Electrical measurements (end-

points) shall be in accordance with table I, group A, subgroup 2 herein.

4.5 Method of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows.

4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750.

4.5.2 Thermal resistance. Thermal resistance measurements shall be conducted in accordance with method

3131 of MIL-STD-750. The following conditions shall apply:

a. I_M: Collector current ............................................................... 10 mA.

b. V_CE: Measurement current (same as V_H).................................. 10 V dc.

c. I_H: Collector heating current................................................... 0.375 A.

d. V_H: Collector-emitter heating voltage...................................... 10 V dc.

e. t_H: Heating time...................................................................... 1.0 s.

f. t_MD: Measurement delay time................................................... 30 to 60 ms.

g. t_SW: Sampling window time....................................................... 10 ms maximum.

4.5.3 Delta requirements. Delta requirements shall be as specified below:

Step

Inspection

MIL-STD-750

Conditions

Symbol

Limit

Unit

Method

3036

1

2

Collector-base cutoff

current

Bias condition D,

V_CB= 80 V dc

100 percent of initial

value or 50 nA dc,

whichever is greater.

DI_CB02(1)

Dh_FE2(1)

Forward current transfer

ratio

3076

± 20 percent change

from initial reading.

V_CE= 5 V dc; I_C= 5 A

dc; pulsed see 4.5.1

(see figure 4).

(1) Devices which exceed the group A limits for this test shall not be accepted.

11

MIL-PRF-19500/394G

TABLE I. Group A inspection.

Inspection 1/

MIL-STD-750

Conditions

Symbol

Limit

Unit

Method

2071

Min

Max

Subgroup 1 2/

Visual and mechanical

examination 3/

n = 45 devices, c = 0

Solderability 3/ 4/

2026

1022

n = 15 leads, c = 0

Resistance to solvent

3/ 4/ 5/

n = 15 devices, c = 0

Temperature cycling

3/ 4/

1051

1071

Test condition C, 25 cycles.

n = 22 devices, c = 0

Hermetic seal 4/

n = 22 devices, c = 0

Fine leak

Gross leak

Electrical

Group A, subgroup 2

measurements 4/

Bond strength 3/ 4/

2037

2075

Precondition T_A= +250°C at

t = 24 hrs or T_A= +300°C at

t = 2 hrs, n = 11 wires, c = 0

* Decap internal 4/

visual (design

verification)

n = 4 device, c = 0

Subgroup 2

Collector to base

cutoff current

3036

3011

I

10

mA dc

CBO1

2N4150, 2N4150S

2N5237, 2N5237S

2N5238, 2N5238S

V_CB= 100 V dc

V_CB= 150 V dc

V_CB= 200 V dc

Breakdown voltage,

collector to emitter

V dc

Bias condition D, I_C= 0.1 A dc,

pulsed (see 4.5.1)

V_(BR)CEO

2N4150, 2N4150S

2N5237, 2N5237S

2N5238, 2N5238S

70

120

170

See footnotes at end of table.

12

MIL-PRF-19500/394G

TABLE I. Group A inspection - Continued.

Inspection 1/

MIL-STD-750

Conditions

Symbol

Limit

Unit

Method

Min

Max

Subgroup 2 - Continued

Emitter to base cutoff

current

3061

3041

10

mA dc

V_BE= 7 V dc

I_EBO1

Collector to emitter

cutoff current

Bias condition D

I_CEO1

V_CE= 60 V dc

V_CE= 110 V dc

V_CE= 160 V dc

2N4150, 2N4150S

2N5237, 2N5237S

2N5238, 2N5238S

Collector to emitter

cutoff current

3041

Bias condition A

V_BE= 0.5 V dc

10

mA dc

I_CEX

2N4150, 2N4150S

2N5237, 2N5237S

2N5238, 2N5238S

V_CE= 60 V dc

V_CE= 110 V dc

V_CE= 160 V dc

Emitter to base cutoff

current

3061

3036

3076

0.1

mA dc

Bias condition D, V_BE= 5 V dc

Bias condition D, V_CB= 80 V dc

I_EBO2

I_CBO

h_FE1

Collector to base cutoff

current

Forward-current

transfer ratio

V_CE= 5 V dc, I_C= 1 A dc, pulsed

(see 4.5.1)

50

200

225

2N4150, 2N4150S

2N5237, 2N5237S

2N5238, 2N5238S

Forward-current

transfer ratio

3076

3071

40

120

0.6

2.5

V_CE= 5 V dc, I_C= 5 A dc, pulsed

(see 4.5.1)

h_FE2

Collector to emitter

voltage (saturated)

V dc

I_C= 5 A dc, I_B= 0.5 A dc, pulsed

(see 4.5.1)

V_CE(sat)1

Collector to emitter

voltage (saturated)

I_C= 10 A dc, I_B= 1 A dc, pulsed

(see 4.5.1)

V_CE(sat)2

See footnotes at end of table.

13

MIL-PRF-19500/394G

TABLE I. Group A inspection - Continued.

Inspection 1/

MIL-STD-750

Conditions

Symbol

Limit

Unit

Method

Min

Max

Subgroup 2 - Continued

Base emitter voltage

saturation

3066

3076

1.5

2.5

V dc

Test condition A, I_C= 5 A dc, I_B=

0.5 A dc, pulsed (see 4.5.1)

V_BE(sat)1

V_BE(sat)2

h_FE3

Base emitter voltage

saturation

Test condition A, I_C= 10 A dc, I_B=

1 A dc, pulsed (see 4.5.1)

Forward-current

transfer ratio

10

V_CE= 5 V dc, I_C= 10 A dc, pulsed

(see 4.5.1)

Subgroup 3

High temperature

operation:

T_A= +150°C

Collector to emitter

cutoff current

3041

100

mA dc

Bias condition A, V_BE= -0.5 V dc

I_CEX2

V_CE= 60 V dc

V_CE= 110 V dc

V_CE= 160 V dc

2N4150, 2N4150S

2N5237, 2N5237S

2N5238, 2N5238S

Low temperature

operation:

T_A= -55°C

Forward-current

transfer ratio

3076

3306

3206

20

V_CE= 5 V dc, I_C= 5 A dc,

pulsed (see 4.5.1)

h_FE4

|h_fe|

h_fe

Subgroup 4

Magnitude of common-

emitter small-signal

short-circuit forward-

current transfer ratio

1.5

7.5

V_CE= 10 V dc, I_C= 0.2 A dc, f = 10

MHz

Small-signal short-

circuit forward-current

transfer ratio

V_CE= 5 V dc, I_C= 50 mA dc, f = 1

kHz

40

160

250

2N4150, 2N4150S

2N5237, 2N5237S

2N5238, 2N5238S

See footnotes at end of table.

14

MIL-PRF-19500/394G

TABLE I. Group A inspection - Continued.

Inspection 1/

MIL-STD-750

Conditions

Symbol

Limit

Unit

pF

Method

Min

Max

350

Subgroup 4 - Continued

Open circuit output

capacitance

3236

3251

V_CB= 10 V dc, I_E= 0, 100 kHz £ f £

1 MHz

C_obo

Pulse response

Delay time

Rise time

Test condition A

See figure 5

50

ns

t_d

t_r

500

1.5

500

Storage time

Fall time

ms

t_s

t_f

ns

Subgroup 5

Safe operating area

(continuous dc)

3051

T_C= +25°C, t = 1.0 s,

Test 1

Test 2

V_CE= 40 V dc, I_C= 0.22 A dc

V_CE= 70 V dc, I_C= 90 mA dc

Test 3

2N5237, 2N5237S only

2N5238, 2N5238S only

V_CE= 120 V dc, I_C= 15 mA dc

V_CE= 170 V dc, I_C= 3.5 mA dc

Clamped inductive

sweep

3053

T_C= +100°C minimum, I_B= 0.5 A

dc, I_C= 5 A dc, (see figure 6)

Electrical

See 4.5.3 herein.

Measurements

1/ For sampling plan, see MIL-PRF-19500.

2/ For resubmission of failed subgroup A1, double the sample size of the failed test or sequence of tests.

3/ Separate samples may be used.

4/ Not required for JANS.

5/ Not required for laser marked devices.

15

MIL-PRF-19500/394G

TABLE II. Group E inspection (all quality levels) – for qualification only.

MIL-STD-750

*

Inspection

Qualification

Method

1051

Conditions

Subgroup 1

45 devices

c = 0

Temperature cycling

(air to air)

Test condition C, 500 cycles

Hermetic seal

Fine leak

Gross leak

1071

1037

Electrical measurements

Subgroup 2

See group A, subgroup 2 herein.

45 devices

c = 0

Intermittent life

V_CB= 10 V dc, 6,000 cycles.

Electrical measurements

See table I, group A, subgroup 2 herein.

Subgroups 3, 4, 5, 6,

and 7

Not applicable

Subgroup 8

45 devices

c = 0

Reverse stability

1033

Condition A for devices ³ 400 V

Condition B for devices < 400 V

16

MIL-PRF-19500/394G

FIGURE 4. Maximum operating conditions - dc forward biased mode.

17

MIL-PRF-19500/394G

FIGURE 5. Speed of response test circuit.

NOTES:

1. An appropriate pulse generator may be substituted.

2. R_S£ 1.0 W noninductive.

3. Clamp voltage: 2N4150: 70 V dc +0 V dc, -5 V dc; 2N5237: 120 V dc +0 V dc, -5 V dc;

2N5238: 170 V dc +0 V dc, -5 V dc

4. STANCOR C-2691 or equivalent; 2 in series.

FIGURE 6. Clamped inductive sweep test circuit.

18

MIL-PRF-19500/394G

5. PACKAGING

5.1 Packaging. For acquisition purposes, the packaging requirements shall be as specified in the contract or

order (see 6.2). When actual packaging of materiel is to be performed by DoD personnel, these personnel need to

contact the responsible packaging activity to ascertain requisite packaging requirements. Packaging requirements

are maintained by the Inventory Control Point's packaging activity within the Military Department or Defense Agency,

or within the Military Department's System Command. Packaging data retrieval is available from the managing

Military Department's or Defense Agency's automated packaging files, CD-ROM products, or by contacting the

responsible packaging activity.

6. NOTES

(This section contains information of a general or explanatory nature that may be helpful, but is not mandatory.)

6.1 Intended use. The notes specified in MIL-PRF-19500 are applicable to this specification.

6.2 Acquisition requirements. Acquisition documents should specify the following:

a. Title, number, and date of this specification.

b. Issue of DoDISS to be cited in the solicitation and, if required, the specified issue of individual documents

referenced (see 2.2.1).

c. Lead finish (see 3.4.1).

d. Type designation and quality assurance level.

e. Packaging requirements (see 5.1).

6.3 Qualification. With respect to products requiring qualification, awards will be made only for products which

are, at the time of award of contract, qualified for inclusion in Qualified Manufacturer's List (QML) whether or not

such products have actually been so listed by that date. The attention of the contractors is called to these

requirements, and manufacturers are urged to arrange to have the products that they propose to offer to the Federal

Government tested for qualification in order that they may be eligible to be awarded contracts or orders for the

products covered by this specification. Information pertaining to qualification of products may be obtained from

Defense Supply Center, Columbus, ATTN: DSCC-VQE, P.O. Box 3990, Columbus, OH 43216-5000.

19

MIL-PRF-19500/394G

6.4 Suppliers of JANHC and JANKC die. The qualified die suppliers with the applicable letter version (example,

JANHCA2N4150) will be identified on the QML.

JANC ordering information

Manufacturers

43611

34156

2N4150

JANHCA2N4150

JANKCA2N4150

JANHCB2N4150

JANKCB2N4150

6.5 Changes from previous issue. The margins of this revision are marked with an asterisk to indicate where

changes from the previous issue were made. This was done as a convenience only and the Government assumes

no liability whatsoever for any inaccuracies in these notations. Bidders and contractors are cautioned to evaluate the

requirements of this document based on the entire content irrespective of the marginal notations and relationship to

the last previous issue.

Custodians:

Army - CR

Navy - EC

Preparing activity:

DLA - CC

Air Force - 11

DLA – CC

(Project 5961 - 2559)

Review activities:

Army - MI, SM

Air Force - 19, 71, 99

20

STANDARDIZATION DOCUMENT IMPROVEMENT PROPOSAL

INSTRUCTIONS

1. The preparing activity must complete blocks 1, 2, 3, and 8. In block 1, both the document number and revision

letter should be given.

2. The submitter of this form must complete blocks 4, 5, 6, and 7.

3. The preparing activity must provide a reply within 30 days from receipt of the form.

NOTE: This form may not be used to request copies of documents, nor to request waivers, or clarification of requirements on

current contracts. Comments submitted on this form do not constitute or imply authorization to waive any portion of the referenced

document(s) or to amend contractual requirements.

1. DOCUMENT NUMBER

MIL-PRF-19500/394G

2. DOCUMENT DATE

5 July 2002

I RECOMMEND A CHANGE:

3. DOCUMENT TITLE

SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER SWITCHING TYPES: 2N4150, 2N5237, 2N5238,

2N4150S, 2N5237S, AND 2N5238S JAN, JANTX, JANTXV, JANS, JANHC AND JANKC

4. NATURE OF CHANGE (Identify paragraph number and include proposed rewrite, if possible. Attach extra sheets as needed.)

5. REASON FOR RECOMMENDATION

6. SUBMITTER

a. NAME (Last, First, Middle initial)

b. ORGANIZATION

c. ADDRESS (Include Zip Code)

d. TELEPHONE (Include Area Code)

7. DATE SUBMITTED

COMMERCIAL

DSN

FAX

EMAIL

8. PREPARING ACTIVITY

b. TELEPHONE

Commercial

614-692-0510

a. Point of Contact

Alan Barone

DSN

FAX

EMAIL

850-0510

614-692-6939

alan.barone@dscc.dla.mil

c. ADDRESS

Defense Supply Center Columbus

ATTN: DSCC-VAC

IF YOU DO NOT RECEIVE A REPLY WITHIN 45 DAYS, CONTACT:

Defense Standardization Program Office (DLSC-LM)

8725 John J. Kingman, Suite 2533

P.O. Box 3990

Fort Belvoir, VA 22060-6221

Columbus, OH 43216-5000

Telephone (703) 767-6888 DSN 427-6888

DD Form 1426, Feb 1999 (EG)

Previous editions are obsolete

WHS/DIOR, Feb 99

型号	制造商	描述	价格	文档
JANTXV2N4150S	ETC	TRANSISTOR \| BJT \| NPN \| 80V V(BR)CEO \| 5A I(C) \| TO-39	获取价格
JANTXV2N4234	ETC	TRANSISTOR \| BJT \| PNP \| 40V V(BR)CEO \| 1A I(C) \| TO-5	获取价格
JANTXV2N4235	ETC	TRANSISTOR \| BJT \| PNP \| 60V V(BR)CEO \| 1A I(C) \| TO-5	获取价格
JANTXV2N4236	ETC	TRANSISTOR \| BJT \| PNP \| 80V V(BR)CEO \| 1A I(C) \| TO-5	获取价格
JANTXV2N4237	ETC	TRANSISTOR \| BJT \| NPN \| 40V V(BR)CEO \| 1A I(C) \| TO-5	获取价格
JANTXV2N4238	ETC	TRANSISTOR \| BJT \| NPN \| 60V V(BR)CEO \| 1A I(C) \| TO-5	获取价格
JANTXV2N4239	ETC	TRANSISTOR \| BJT \| NPN \| 80V V(BR)CEO \| 1A I(C) \| TO-5	获取价格
JANTXV2N4261	ETC	TRANSISTOR \| BJT \| PNP \| 15V V(BR)CEO \| 30MA I(C) \| TO-72	获取价格
JANTXV2N4261UB	ETC	BJT	获取价格
JANTXV2N4261UB	MICROCHIP	元器件封装:UB;	获取价格

JANTXV2N4150

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