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FMOSP194N08-H

更新时间：2025-01-23 11:17:32

品牌：FORMOSA

描述：Status : Active; Package : TO-220AB; ESD : No; BVDSS(V) : 80; ID(A) : 194; PD(W) : 192; EAS(mJ) :

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FMOSP194N08-H 概述

Status : Active; Package : TO-220AB; ESD : No; BVDSS(V) : 80; ID(A) : 194; PD(W) : 192; EAS(mJ) :

FMOSP194N08-H 数据手册

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N-Channel Power MOSFET

Formosa MS

FMOSP194N08

List

List.................................................................................................1

Package outline...............................................................................2

Features..........................................................................................2

Application.......................................................................................2

Mechanical data...............................................................................2

Maximum ratings .............................................................................2

Electrical characteristics...................................................................3

Typical Performance Characteristics................................................4~6

Pinning information...........................................................................6

Marking............................................................................................6

Packing Information..........................................................................6

Suggested thermal profiles for soldering processes.............................7

http://www.formosams.com

TEL:886-2-22696661

FAX:886-2-22696141

Document ID

DS-2321BL27

Issued Date

2023/01/05

Revised Date

Revision

Page

Page 1

Formosa MS

N-Channel Power MOSFET

Formosa MS

FMOSP194N08

194A, 80V N-Channel Power MOSFET

Package outline

Features

• V_DS=80V, I_D=194A.

TO-220AB

• R_DS(ON)≤ 3.0mΩ, @V_GS=10V, I_D=20A.

• Ultra-low R_DS(ON)

• Low gate charge.

0.413(10.50)

0.382(9.70)

0.185(4.70)

• 100% UIS tested, 100% R_gtested.

• RoHS compliant & halogen-free.

0.167(4.24)

0.272(6.90)

0.055(1.40)

0.045(1.15)

0.118(3.00)

0.094(2.40)

0.246(6.25)

• Suffix "-H" dinicates Halogen-free part, ex.FMOSP194N08-H.

0.390(9.90)

0.346(8.80)

Application

• Power Management in Telecom., Industrial Automation, CE.

• Motor Driving in Power Tool, E-vehicle, Robotics.

• Current Switching in DC/DC & AC/DC Sub-systems.

0.150(3.80)Max.

0.118(3.00)

0.087(2.20)

0.067(1.70)

0.045(1.14)

Mechanical data

0.024(0.60)

0.016(0.40)

• Epoxy:UL94-V0 rated flame retardant.

• Case : Molded plastic, TO-220AB.

• Terminals : Solder plated, solderable per MIL-STD-750, Method 2026.

• Mounting Position : Any.

Dimensions in inches and (millimeters)

Maximum ratings ^{(At T}_C⁼²⁵^o^{C unless otherwise specified)}

Parameter

Symbol

Ratings

Unit

Drain to source voltage

Gate-source voltage

V_DS

V_GS

±20

194

Continuous drain Current

(T_C=25℃)

I_D

(T_C=100℃)

122

Pulsed drain current (Note 2)

Avalanche current

I_DM

I_AS

650

(Note 3)

Single pulse avalanche energy (Note 3)

Power dissipation

E_AS

P_D

304

192

Junction temperature

T_J

+150

-55 ~ +150

℃

Storage temperature range

T_STG

R_θJA

R_θJC

℃

Thermal resistance, Junction to ambient

Thermal resistance, Junction to case

℃/W

0.65

http://www.formosams.com

TEL:886-2-22696661

FAX:886-2-22696141

Document ID

DS-2321BL27

Issued Date

2023/01/05

Revised Date

Revision

Page

Page 2

Formosa MS

N-Channel Power MOSFET

Formosa MS

FMOSP194N08

Electrical characteristics ^{(At T}_J⁼²⁵^o^{C unless otherwise specified)}

Parameter

Symbol

Conditions

Min. Typ. Max. Unit

Off characteristics

Drain-source breakdown voltage

Drain-source leakage current

Gate-source leakage current

BV_DSS

I_DSS

I_D=250µA, V_GS=0V

V_DS=64V, V_GS=0V

V_GS=±20V, V_DS=0V

1.0

µA

I_GSS

±100

On characteristics

Gate threshold voltage

V_GS(TH)V_DS=V_GS, I_D=250µA

R_DS(ON)V_GS=10V, I_D=20A

2.0

2.9

2.5

4.0

3.0

mΩ

Static drain-source on-state resistance (Note 4)

Forward transconductance

g_FS

V_DS=5V, I_D=20A

Dynamic parameters (Note 5)

Input capacitance

C_iss

C_oss

C_rss

R_g

5552

2010

Out capacitance

V_GS=0V, V_DS=40V, f=1.0MHz

V_GS= 0V, V_DS= 0V, f = 1MHz

Reverse transfer capacitance

Gate resistance

1.7

Switching parameters

Total gate charge

Gate to source charge

Gate to drain charge

Turn-on delay time

Rise time

(Note 5)

Q_g

Q_gs

Q_gd

t_d(on)

t_r

V_GS=10V, V_DS=40V, I_D=20A

V_DS=40V, V_GS=10V, R_L=2Ω, R_G=6Ω

Turn-off delay time

Fall time

t_d(off)

t_f

Source-drain diode ratings and characteristics

Diode continuous current

I_S

V_SD

t_rr

192

1.0

Drain-source diode forward voltage ^{(Note 4)}

Reverse recovery time

I_SD=1A, V_GS=0V

0.7

I_F=20A, V_R=0V, di/dt=100A/μs

Reverse recovery charge

Q_rr

166

Note:

1.Computed continuous current assumes the condition of T_{J_Max}while the actual continuous current depends on the thermal & electro-mechanical.

2. This single-pulse measurement was taken under T_{J_Max}= 150°C.

3. This single-pulse measurement was taken under the following condition [L = 100µH, V_GS= 10V, V_DS= 40V] while its value is limited by T_{J_Max}= 150°C.

4. The power dissipation P_Dis based on T_{J_Max}= 150°C.

5. This value is guaranteed by design hence it is not included in the production test.

http://www.formosams.com

TEL:886-2-22696661

FAX:886-2-22696141

Document ID

DS-2321BL27

Issued Date

2023/01/05

Revised Date

Revision

Page

Page 3

Formosa MS

N-Channel Power MOSFET

Formosa MS

FMOSP194N08

Typical Performance Characteristics

http://www.formosams.com

TEL:886-2-22696661

FAX:886-2-22696141

Document ID

DS-2321BL27

Issued Date

2023/01/05

Revised Date

Revision

Page

Page 4

Formosa MS

N-Channel Power MOSFET

Formosa MS

FMOSP194N08

Typical Performance Characteristics

http://www.formosams.com

TEL:886-2-22696661

FAX:886-2-22696141

Document ID

DS-2321BL27

Issued Date

2023/01/05

Revised Date

Revision

Page

Page 5

Formosa MS

N-Channel Power MOSFET

Formosa MS

FMOSP194N08

Typical Performance Characteristics

Pinning information

Simplified outline

Symbol

Drain

TO-220AB

Gate

Source

Marking

TO-220AB

C194N08

Packing Information

FMOSP194N08

TO-220AB

http://www.formosams.com

TEL:886-2-22696661

FAX:886-2-22696141

Document ID

DS-2321BL27

Issued Date

2023/01/05

Revised Date

Revision

Page

Page 6

Formosa MS

N-Channel Power MOSFET

Formosa MS

FMOSP194N08

Suggested thermal profiles for soldering processes

1.Storage environment: Temperature=5^oC~40^oC Humidity=55%±25%

2.Reflow soldering of surface-mount devices

t25^oC to Peak

3.Reflow soldering

Profile Feature

Average ramp-up rate(T

Preheat

Soldering Condition

to T

)

<3^oC/sec

-Temperature Min(Tsmin)

-Temperature Max(Tsmax)

-Time(min to max)(t

150^oC

200^oC

60~120sec

)

Tsmax to T

-Ramp-upRate

<3^oC/sec

Time maintained above:

-Temperature(T

-Time(t

)

217^oC

60~260sec

)

Peak Temperature(T

)

255^oC-0/+5^oC

Time within 5^oC of actual Peak

10~30sec

Temperature(t )

Ramp-down Rate

Time 25^oC to Peak Temperature

<3^oC/sec

<6minutes

http://www.formosams.com

TEL:886-2-22696661

FAX:886-2-22696141

Document ID

DS-2321BL27

Issued Date

2023/01/05

Revised Date

Revision

Page

Page 7

Formosa MS

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