概述
数据手册0908SQ-17NGLC 概述
RF Power LDMOS Transistors RF功率LDMOS晶体管
0908SQ-17NGLC 数据手册
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PDF下载Document Number: AFT05MS031N
Rev. 0, 6/2012
Freescale Semiconductor
Technical Data
RF Power LDMOS Transistors
High Ruggedness N--Channel
AFT05MS031NR1
AFT05MS031GNR1
Enhancement--Mode Lateral MOSFETs
Designed for mobile two--way radio applications with frequencies from
136 to 520 MHz. The high gain, ruggedness and broadband performance of
these devices make them ideal for large--signal, common source amplifier
applications in mobile radio equipment.
136--520 MHz, 31 W, 13.6 V
WIDEBAND
RF POWER LDMOS TRANSISTORS
Typical Performance: (13.6 Vdc, T = 25°C, CW)
A
Frequency
(MHz)
G
η
P1dB
(W)
ps
D
(dB)
18.3
17.7
17.7
(%)
64.1
62.0
71.4
(1,3)
380--450
31
31
33
(2,3)
450--520
(4)
520
T O -- 2 7 0 -- 2
PLASTIC
Load Mismatch/Ruggedness
AFT05MS031NR1
Signal
Type
Frequency
(MHz)
P
(W)
Test
Voltage
out
VSWR
Result
(4)
520
CW
>65:1 at all
47
17
No Device
Phase Angles
(3 dB Overdrive)
Degradation
1. Measured in 380--450 MHz UHF wideband reference circuit.
2. Measured in 450--520 MHz UHF wideband reference circuit.
3. The values shown are the minimum measured performance numbers across the
indicated frequency range.
T O -- 2 7 0 -- 2 G U L L
PLASTIC
AFT05MS031GNR1
4. Measured in 520 MHz narrowband test circuit.
Features
•
•
•
•
•
Characterized for Operation from 136 to 520 MHz
Unmatched Input and Output Allowing Wide Frequency Range Utilization
Integrated ESD Protection
Integrated Stability Enhancements
Wideband — Full Power Across the Band:
− 136--174 MHz
Gate
Drain
− 380--450 MHz
− 450--520 MHz
•
•
•
•
•
225°C Capable Plastic Package
Exceptional Thermal Performance
High Linearity for: TETRA, SSB, LTE
Cost--effective Over--molded Plastic Packaging
In Tape and Reel. R1 Suffix = 500 Units, 24 mm Tape Width, 13 inch Reel.
(Top View)
Note: The backside of the package is the
source terminal for the transistor.
Figure 1. Pin Connections
Typical Applications
•
•
Output Stage VHF Band Mobile Radio
Output Stage UHF Band Mobile Radio
© Freescale Semiconductor, Inc., 2012. All rights reserved.
Table 1. Maximum Ratings
Rating
Symbol
Value
--0.5, +40
--6.0, +12
17, +0
Unit
Vdc
Vdc
Vdc
°C
Drain--Source Voltage
Gate--Source Voltage
Operating Voltage
V
DSS
V
GS
DD
V
Storage Temperature Range
T
stg
--65 to +150
Total Device Dissipation @ T = 25°C
P
294
W
C
D
Derate above 25°C
1.47
W/°C
(1,2)
Operating Junction Temperature
T
J
225
°C
Table 2. Thermal Characteristics
(2,3)
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
R
θ
0.67
°C/W
JC
Case Temperature 79°C, 31 W CW, 13.6 Vdc, I = 10 mA, 520 MHz
DQ
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
2, passes 2500 V
A, passes 100 V
IV, passes 2000 V
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD22--A113, IPC/JEDEC J--STD--020
3
260
°C
Table 5. Electrical Characteristics (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
I
I
—
—
—
—
—
—
2
1
μAdc
μAdc
nAdc
DSS
DSS
GSS
(V = 40 Vdc, V = 0 Vdc)
DS
GS
Zero Gate Voltage Drain Leakage Current
(V = 13.6 Vdc, V = 0 Vdc)
DS
GS
Gate--Source Leakage Current
I
600
(V = 5 Vdc, V = 0 Vdc)
GS
DS
On Characteristics
Gate Threshold Voltage
(V = 10 Vdc, I = 115 μAdc)
V
1.6
—
2.1
0.13
5.8
2.6
—
Vdc
Vdc
S
GS(th)
DS
D
Drain--Source On--Voltage
(V = 10 Vdc, I = 1.2 Adc)
V
DS(on)
GS
D
Forward Transconductance
(V = 10 Vdc, I = 7.5 Adc)
g
—
—
fs
GS
D
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
(continued)
AFT05MS031NR1 AFT05MS031GNR1
RF Device Data
Freescale Semiconductor, Inc.
2
Table 5. Electrical Characteristics (T = 25°C unless otherwise noted) (continued)
A
Characteristic
Symbol
Min
Typ
Max
Unit
Dynamic Characteristics
Reverse Transfer Capacitance
C
—
—
—
1.6
49.5
109
—
—
—
pF
pF
pF
rss
(V = 13.6 Vdc ± 30 mV(rms)ac @ 1 MHz, V = 0 Vdc)
DS
GS
Output Capacitance
(V = 13.6 Vdc ± 30 mV(rms)ac @ 1 MHz, V = 0 Vdc)
DS
C
oss
GS
Input Capacitance
C
iss
(V = 13.6 Vdc, V = 0 Vdc ± 30 mV(rms)ac @ 1 MHz)
DS
GS
(1)
Functional Tests
(In Freescale Narrowband Test Fixture, 50 ohm system) V = 13.6 Vdc, I = 10 mA, P = 31 W, f = 520 MHz
DD DQ out
Common--Source Amplifier Power Gain
Drain Efficiency
G
16.5
17.7
71.4
19.0
—
dB
%
ps
η
70.0
D
Load Mismatch/Ruggedness (In Freescale Test Fixture, 50 ohm system, I = 10 mA)
DQ
Frequency
(MHz)
Signal
Type
P
out
(W)
VSWR
Test Voltage, V
Result
No Device Degradation
DD
520
CW
>65:1 at all Phase Angles
47
17
(3 dB Overdrive)
1. Measurement made with device in straight lead configuration before any lead forming operation is applied. Lead forming is used for gull
wing (GN) parts.
AFT05MS031NR1 AFT05MS031GNR1
RF Device Data
Freescale Semiconductor, Inc.
3
TYPICAL CHARACTERISTICS
7
1000
T = 25°C
A
V
= 4.25 Vdc
4 Vdc
GS
Measured with ±30 mV(rms)ac @ 1 MHz, V = 0 Vdc
GS
6
C
iss
5
4
100
10
1
C
oss
3.75 Vdc
3.5 Vdc
3
2
1
3.25 Vdc
3 Vdc
C
rss
2.75 Vdc
0
0
4
8
12
16
20
0
4
8
12
16
20
V
, DRAIN--SOURCE VOLTAGE (VOLTS)
V
, DRAIN--SOURCE VOLTAGE (VOLTS)
DS
DS
Note: Measured with both sides of the transistor tied together.
Figure 2. Capacitance versus Drain--Source Voltage
Figure 3. Drain Current versus Drain--Source Voltage
9
10
V
= 13.6 Vdc
DD
8
10
I
D
= 2.5 Amps
7
10
3.2 Amps
3.9 Amps
6
10
10
5
4
10
90
110
130
150
170
190
210
230
250
T , JUNCTION TEMPERATURE (°C)
J
Note: MTTF value represents the total cumulative operating time
under indicated test conditions.
Figure 4. MTTF versus Junction Temperature -- CW
AFT05MS031NR1 AFT05MS031GNR1
RF Device Data
Freescale Semiconductor, Inc.
4
520 MHz NARROWBAND PRODUCTION TEST FIXTURE
C1
C7
C14
B2
C13
B3
B1
C16
C3
C2
C5
C4
C18
C8
L2
C11
C9
L1
C15
C6
C10
C12
C17
AFT05MS031N
Rev. 1
Figure 5. AFT05MS031NR1 Narrowband Test Circuit Component Layout — 520 MHz
Table 6. AFT05MS031NR1 Narrowband Test Circuit Component Designations and Values — 520 MHz
Part
Description
Part Number
Manufacturer
B1, B2, B3
C1
RF Beads, Long
2743021447
Fair--Rite
22 μF, 35 V Tantalum Capacitor
0.01 μF Chip Capacitors
0.1 μF Chip Capacitors
200 pF Chip Capacitor
6.2 pF Chip Capacitor
3.9 pF Chip Capacitor
180 pF Chip Capacitors
10 pF Chip Capacitor
T491X226K035AT
C0805C103K5RAC
CDR33BX104AKWS
ATC100B201JT300XT
ATC100B6R2JT500XT
ATC100B3R9JT500XT
ATC100B181JT200XT
ATC100B100JT500XT
ATC100B360JT500XT
ATC100B270JT500XT
ATC100B7R5JT500XT
SME63V471M12X25LL
B10TJLC
Kemet
Kemet
Kemet
ATC
C2, C14
C3, C13
C4
C5
ATC
C6
ATC
C7, C16
C8
ATC
ATC
C9, C10, C11, C12
36 pF Chip Capacitors
27 pF Chip Capacitor
ATC
C15
C17
C18
L1
ATC
7.5 pF Chip Capacitor
470 μF, 63 V Electrolytic Capacitor
43 nH, 10 Turn Inductor
56 nH Inductor
ATC
United Chemi--Con
Coilcraft
Coilcraft
Arlon
L2
1812SMS--56NJLC
AD255A
PCB
0.030″, ε = 2.55
r
AFT05MS031NR1 AFT05MS031GNR1
RF Device Data
Freescale Semiconductor, Inc.
5
AFT05MS031NR1 AFT05MS031GNR1
RF Device Data
Freescale Semiconductor, Inc.
6
TYPICAL CHARACTERISTICS — 520 MHz
50
45
40
35
30
25
20
15
10
5
V
= 13.6 Vdc, P = 0.6 W
in
DD
V
= 13.6 Vdc, P = 0.3 W
in
DD
V
= 12.5 Vdc, P = 0.6 W
in
DD
V
P
= 12.5 Vdc
= 0.3 W
DD
in
f = 520 MHz
5
0
0
1
2
3
4
6
V
, GATE--SOURCE VOLTAGE (VOLTS)
GS
Figure 7. Output Power versus Gate--Source Voltage
20
90
80
70
V
= 13.6 Vdc, I = 10 mA
DQ
DD
19
18
f = 520 MHz
η
D
60
50
40
17
16
15
14
13
12
G
ps
P
out
30
20
10
0
11
0.03
0.1
1
3
P , INPUT POWER (WATTS)
in
Figure 8. Power Gain, Output Power and Drain
Efficiency versus Input Power
V
= 13.6 Vdc, I = 10 mA, P = 31 W Avg.
DQ out
DD
f
Z
Z
load
source
MHz
Ω
Ω
520
0.72 + j1.77
1.54 + j0.80
Z
Z
= Test circuit impedance as measured from
gate to ground.
source
= Test circuit impedance as measured from
drain to ground.
load
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
50 Ω
50 Ω
Z
Z
load
source
Figure 9. Narrowband Series Equivalent Source and Load Impedance — 520 MHz
AFT05MS031NR1 AFT05MS031GNR1
RF Device Data
Freescale Semiconductor, Inc.
7
380--450 MHz UHF WIDEBAND REFERENCE CIRCUIT, 50 OHM SYSTEM
Table 8. 380--450 MHz UHF Wideband Performance (13.6 Vdc, I = 100 mA, T = 25°C, CW)
DQ
A
Frequency
(MHz)
G
η
P1dB
(W)
ps
D
(dB)
18.7
18.6
18.3
(%)
64.1
67.0
68.1
380
420
450
31
31
31
Table 9. Load Mismatch/Ruggedness (In Freescale Reference Circuit)
Frequency
(MHz)
Signal
Type
P
out
(W)
VSWR
Test Voltage, V
Result
DD
420
CW
>65:1 at all
62
17
No Device
Phase Angles
(3 dB Overdrive)
Degradation
AFT05MS031NR1 AFT05MS031GNR1
RF Device Data
Freescale Semiconductor, Inc.
8
380--450 MHz UHF WIDEBAND REFERENCE CIRCUIT
V
V
DS
GS
B2
C12
C11
B1
R1
C1
L1
C13
C14 C15
C17
C16
J1
C6
TO -- 2 7 0 -- 2
Rev. 0
L7
C10
C5*
C8
L4
C2
L2
Q1
L6
C7
C4*
L3
L5
C3
C9
* C4 and C5 are mounted vertically.
Figure 10. AFT05MS031NR1 UHF Wideband Reference Circuit Component Layout — 380--450 MHz
Table 10. AFT05MS031NR1 UHF Wideband Reference Circuit Component Designations and Values — 380--450 MHz
Part
Description
Part Number
Manufacturer
B1
Low Current Ferrite Bead
2508051107Y0
Fair--Rite
B2
High Current Ferrite Bead
56 pF Chip Capacitors
3.9 pF Chip Capacitor
18 pF Chip Capacitor
47 pF Chip Capacitor
240 pF Chip Capacitors
24 pF Chip Capacitor
68 pF Chip Capacitor
27 pF Chip Capacitor
8.2 pF Chip Capacitor
3.0 pF Chip Capacitor
0.1 μF Chip Capacitor
1 μF Chip Capacitor
10 μF Chip Capacitors
3 Pin Connector
2518065007Y6
Fair--Rite
ATC
C1, C5
C2
ATC600F560JT250XT
ATC600F3R9BT250XT
ATC600F180JT250XT
ATC600F470JT250XT
ATC600F241JT250XT
ATC600F240JT250XT
ATC600F680JT250XT
ATC600F270JT250XT
ATC600F8R2BT250XT
ATC600F3R0BT250XT
GRM21BR71H104KA01B
GRM21BR71H105KA12L
GRM31CR61H106KA12L
AMP--9--146305--0
0806SQ--5N5GLC
ATC
C3
ATC
C4
ATC
C6, C12, C15
ATC
C7
ATC
C8
ATC
C9
ATC
C10
ATC
C11
ATC
C13
Murata
Murata
Murata
TE Connectivity
Coilcraft
Coilcraft
Coilcraft
Coilcraft
Freescale
Susumu
Shengyi
C14
C16, C17
J1
L1, L2, L3, L6
5.5 nH Inductors
L4
17 nH Inductor
0908SQ--17NGLC
L5
1.65 nH Inductor
0906--2KLC
L7
2.55 nH Inductor
0906--3JLC
Q1
R1
PCB
RF Power LDMOS Transistor
62 Ω, 1/4 W Chip Resistor
AFT05MS031NR1
RG2012N--620--BT1
S1000--2, FR4
0.020″, ε = 4.9
r
AFT05MS031NR1 AFT05MS031GNR1
RF Device Data
Freescale Semiconductor, Inc.
9
AFT05MS031NR1 AFT05MS031GNR1
RF Device Data
Freescale Semiconductor, Inc.
10
TYPICAL CHARACTERISTICS — 380--450 MHz UHF WIDEBAND
REFERENCE CIRCUIT
18
80
75
70
65
60
30
29
28
27
26
25
V
DQ
= 12.5 Vdc, P = 0.5 W (Avg.)
in
DD
17.9
17.8
17.7
17.6
I
= 100 mA
η
D
G
P
ps
17.5
17.4
17.3
17.2
out
17.1
17
370 380
390 400
410
420
430 440 450 460
f, FREQUENCY (MHz)
Figure 12. Power Gain, Output Power and Drain Efficiency versus
Frequency at a Constant Input Power — 12.5 V
18.5
80
75
70
65
60
35
34
33
32
31
30
V
DQ
= 13.6 Vdc, P = 0.5 W (Avg.)
in
DD
18.4
18.3
18.2
18.1
I
= 100 mA
η
D
G
ps
18
17.9
17.8
17.7
P
out
17.6
17.5
430
f, FREQUENCY (MHz)
370 380 390 400
410 420
440 450 460
Figure 13. Power Gain, Output Power and Drain Efficiency versus
Frequency at a Constant Input Power — 13.6 V
AFT05MS031NR1 AFT05MS031GNR1
RF Device Data
Freescale Semiconductor, Inc.
11
TYPICAL CHARACTERISTICS — 380--450 MHz UHF WIDEBAND
REFERENCE CIRCUIT
50
40
V
= 13.6 Vdc, P = 0.5 W
in
DD
5
4
3
V
= 13.6 Vdc, P = 0.25 W
in
V
P
= 13.6 Vdc,
= 0.5 W
DD
DD
V
= 13.6 Vdc, P = 0.25 W
in
DD
in
V
= 12.5 Vdc, P = 0.5 W
in
DD
30
20
10
V
P
= 12.5 Vdc,
= 0.5 W
DD
in
V
P
= 12.5 Vdc,
= 0.25 W
DD
2
1
0
in
V
P
= 12.5 Vdc,
= 0.25 W
DD
in
f = 420 MHz
f = 420 MHz
1.6
Detail A
0
0.4
0.8
2
1.2
0
V
, GATE--SOURCE VOLTAGE (VOLTS)
GS
2
0
1
3
4
5
Detail A
V
, GATE--SOURCE VOLTAGE (VOLTS)
GS
Figure 14. Output Power versus Gate--Source Voltage
100
80
60
40
20
0
80
70
60
50
40
22
20
18
16
V
= 13.6 Vdc, I = 100 mA
DQ
DD
420 MHz
420 MHz
450 MHz
450 MHz
380 MHz
420 MHz
450 MHz
G
ps
380 MHz
30
380 MHz
14
12
P
out
20
10
η
D
0.01
0.1
P , INPUT POWER (WATTS)
1
4
in
Figure 15. Power Gain, Output Power and Drain
Efficiency versus Input Power and Frequency
AFT05MS031NR1 AFT05MS031GNR1
RF Device Data
Freescale Semiconductor, Inc.
12
380--450 MHz UHF WIDEBAND REFERENCE CIRCUIT
Z = 5 Ω
o
f = 450 MHz
f = 380 MHz
Z
source
f = 380 MHz
f = 450 MHz
Z
load
V
= 13.6 Vdc, I = 10 mA, P = 31 W Avg.
DQ out
DD
f
Z
Z
load
source
MHz
380
390
400
410
420
430
440
450
Ω
Ω
1.57 + j1.94
1.66 + j2.07
1.74 + j2.16
1.79 + j2.20
1.79 + j2.21
1.74 + j2.21
1.62 + j2.23
1.45 + j2.29
2.53 -- j0.27
2.53 -- j0.26
2.56 -- j0.27
2.49 -- j0.29
2.38 -- j0.28
2.26 -- j0.24
2.11 -- j0.16
1.95 -- j0.05
Z
Z
= Test circuit impedance as measured from
gate to ground.
source
= Test circuit impedance as measured from
drain to ground.
load
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
50 Ω
50 Ω
Z
Z
load
source
Figure 16. UHF Wideband Series Equivalent Source and Load Impedance — 380--450 MHz
AFT05MS031NR1 AFT05MS031GNR1
RF Device Data
Freescale Semiconductor, Inc.
13
450--520 MHz UHF WIDEBAND REFERENCE CIRCUIT, 50 OHM SYSTEM
Table 12. 450--520 MHz UHF Wideband Performance (13.6 Vdc, I = 100 mA, T = 25°C, CW)
DQ
A
Frequency
(MHz)
G
η
P1dB
(W)
ps
D
(dB)
17.7
18.7
17.9
(%)
62.0
63.8
67.0
450
490
520
31
31
31
Table 13. Load Mismatch/Ruggedness (In Freescale Reference Circuit)
Frequency
(MHz)
Signal
Type
P
out
(W)
VSWR
Test Voltage, V
Result
DD
490
CW
>65:1 at all
62
17
No Device
Phase Angles
(3 dB Overdrive)
Degradation
AFT05MS031NR1 AFT05MS031GNR1
RF Device Data
Freescale Semiconductor, Inc.
14
450--520 MHz UHF WIDEBAND REFERENCE CIRCUIT
V
V
DS
GS
C1
L1
B1
R1
C17
B2
C13 C14 C15
C19
C18
J1
C16
C12
L7
TO -- 2 7 0 -- 2
Rev. 0
C5
C6
C11
C9
L4
Q1
C8
C2
L2
C4
C7
L6
L3
L5
C3
C10
Figure 17. AFT05MS031NR1 UHF Wideband Reference Circuit Component Layout — 450--520 MHz
Table 14. AFT05MS031NR1 UHF Wideband Reference Circuit Component Designations and Values — 450--520 MHz
Part
Description
Part Number
Manufacturer
B1
Low Current Ferrite Bead
2508051107Y0
Fair--Rite
B2
High Current Ferrite Bead
56 pF Chip Capacitor
2.7 pF Chip Capacitor
12 pF Chip Capacitor
27 pF Chip Capacitors
33 pF Chip Capacitors
39 pF Chip Capacitor
18 pF Chip Capacitors
8.2 pF Chip Capacitor
1.8 pF Chip Capacitor
0.1 μF Chip Capacitor
1 μF Chip Capacitor
240 pF Chip Capacitors
10 μF Chip Capacitors
3 Pin Connector
2518065007Y6
Fair--Rite
ATC
C1
ATC600F560JT250XT
ATC600F2R7BT250XT
ATC600F120JT250XT
ATC600F270JT250XT
ATC600F330JT250XT
ATC600F390JT250XT
ATC600F180JT250XT
ATC600F8R2BT250XT
ATC600F1R8BT250XT
GRM21BR71H104KA01B
GRM21BR71H105KA12L
ATC600F241JT250XT
GRM31CR61H106KA12L
AMP--9--146305--0
C2
ATC
C3
ATC
C4, C9
C5, C8
C6
ATC
ATC
ATC
C7, C10
C11
C12
C13
C14
ATC
ATC
ATC
Murata
Murata
ATC
C15, C16, C17
C18, C19
J1
Murata
TE Connectivity
Coilcraft
Coilcraft
Coilcraft
Coilcraft
Freescale
Susumu
Shengyi
L1, L3
L2, L6
L4
6.0 nH Inductors
0806SQ--6N0GLC
5.5 nH Inductors
0806SQ5N5GLC
17 nH Inductor
0908SQ--17NGLC
L5, L7
Q1
1.65 nH Inductors
0906--2KLC
RF Power LDMOS Transistor
62 Ω, 1/4 W Chip Resistor
AFT05MS031NR1
R1
RG2012N--620--BT1
S1000--2, FR4
PCB
0.020″, ε = 4.9
r
AFT05MS031NR1 AFT05MS031GNR1
RF Device Data
Freescale Semiconductor, Inc.
15
AFT05MS031NR1 AFT05MS031GNR1
RF Device Data
Freescale Semiconductor, Inc.
16
TYPICAL CHARACTERISTICS — 450--520 MHz UHF WIDEBAND
REFERENCE CIRCUIT
18
70
68
66
64
62
60
30
29
28
27
26
V
DQ
= 12.5 Vdc, P = 0.5 W (Avg.)
in
η
DD
17.8
17.6
17.4
17.2
D
I
= 100 mA
G
ps
17
16.8
16.6
16.4
P
out
16.2
16
440 450
460 470
480
490
500 510 520 530
f, FREQUENCY (MHz)
Figure 19. Power Gain, Drain Efficiency and Output Power versus
Frequency at a Constant Input Power — 12.5 V
19
18.75
18.5
18.25
18
17.75
17.5
17.25
17
73
71
69
V
DQ
= 13.6 Vdc, P = 0.5 W (Avg.)
in
DD
I
= 100 mA
67
65
63
61
36
34
32
30
G
ps
η
D
P
out
16.75
16.5
16.25
16
28
26
440 450
460 470
480
490
500 510
520 530
f, FREQUENCY (MHz)
Figure 20. Power Gain, Drain Efficiency and Output Power versus
Frequency at a Constant Input Power — 13.6 V
AFT05MS031NR1 AFT05MS031GNR1
RF Device Data
Freescale Semiconductor, Inc.
17
TYPICAL CHARACTERISTICS — 450--520 MHz UHF WIDEBAND
REFERENCE CIRCUIT
60
50
40
30
20
10
25
20
15
V
= 13.6 Vdc, P = 0.5 W
in
DD
V
= 13.6 Vdc, P = 0.25 W
in
DD
V
P
= 13.6 Vdc,
= 0.5 W
DD
V
= 13.6 Vdc, P = 0.25 W
in
DD
in
V
= 12.5 Vdc, P = 0.5 W
in
DD
V
P
= 12.5 Vdc,
= 0.5 W
DD
in
V
P
= 12.5 Vdc,
= 0.25 W
DD
10
5
V
P
= 12.5 Vdc,
= 0.25 W
DD
in
in
f = 490 MHz
f = 490 MHz
2.5
0
Detail A
0
0.5
1
2
3
3.5
1.5
0
V
, GATE--SOURCE VOLTAGE (VOLTS)
GS
2
0
1
3
4
5
6
Detail A
V
, GATE--SOURCE VOLTAGE (VOLTS)
GS
Figure 21. Output Power versus Gate--Source Voltage
80
60
20
18
16
14
12
520 MHz
490 MHz
G
ps
450 MHz
490 MHz
520 MHz
η
D
450 MHz
490 MHz
520 MHz
40
20
0
450 MHz
P
out
V
= 13.6 Vdc, I = 100 mA
DD
DQ
0.01
0.1
P , INPUT POWER (WATTS)
1
3
in
Figure 22. Power Gain, Output Power and Drain
Efficiency versus Input Power and Frequency
AFT05MS031NR1 AFT05MS031GNR1
RF Device Data
Freescale Semiconductor, Inc.
18
450--520 MHz UHF WIDEBAND REFERENCE CIRCUIT
f = 520 MHz
Z = 5 Ω
o
f = 450 MHz
Z
source
f = 520 MHz
f = 450 MHz
Z
load
V
= 13.6 Vdc, I = 100 mA, P = 31 W Avg.
DQ out
DD
f
Z
Z
load
source
MHz
450
460
470
480
490
500
510
520
Ω
Ω
1.37 + j1.64
1.43 + j1.72
1.47 + j1.79
1.49 + j1.83
1.47 + j1.86
1.41 + j1.89
1.32 + j1.93
1.20 + j1.99
2.57 -- j1.01
2.49 -- j1.03
2.38 -- j1.03
2.26 -- j1.01
2.11 -- j0.95
1.97 -- j0.87
1.82 -- j0.76
1.68 -- j0.62
Z
Z
= Test circuit impedance as measured from
gate to ground.
source
= Test circuit impedance as measured from
drain to ground.
load
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
50 Ω
50 Ω
Z
Z
load
source
Figure 23. UHF Wideband Series Equivalent Source and Load Impedance — 450--520 MHz
AFT05MS031NR1 AFT05MS031GNR1
RF Device Data
Freescale Semiconductor, Inc.
19
PACKAGE DIMENSIONS
AFT05MS031NR1 AFT05MS031GNR1
RF Device Data
Freescale Semiconductor, Inc.
20
AFT05MS031NR1 AFT05MS031GNR1
RF Device Data
Freescale Semiconductor, Inc.
21
AFT05MS031NR1 AFT05MS031GNR1
RF Device Data
Freescale Semiconductor, Inc.
22
AFT05MS031NR1 AFT05MS031GNR1
RF Device Data
Freescale Semiconductor, Inc.
23
AFT05MS031NR1 AFT05MS031GNR1
RF Device Data
Freescale Semiconductor, Inc.
24
AFT05MS031NR1 AFT05MS031GNR1
RF Device Data
Freescale Semiconductor, Inc.
25
PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS
Refer to the following documents, software and tools to aid your design process.
Application Notes
•
•
•
•
AN1907: Solder Reflow Attach Method for High Power RF Devices in Over--Molded Plastic Packages
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over--Molded Plastic Packages
AN3789: Clamping of High Power RF Transistors and RFICs in Over--Molded Plastic Packages
Engineering Bulletins
EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
•
•
•
•
Electromigration MTTF Calculator
RF High Power Model
.s2p File
Development Tools
•
Printed Circuit Boards
For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the
Software & Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
June 2012
•
Initial Release of Data Sheet
AFT05MS031NR1 AFT05MS031GNR1
RF Device Data
Freescale Semiconductor, Inc.
26
How to Reach Us:
Information in this document is provided solely to enable system and software
implementers to use Freescale products. There are no express or implied copyright
licenses granted hereunder to design or fabricate any integrated circuits based on the
information in this document.
Home Page:
freescale.com
Web Support:
freescale.com/support
Freescale reserves the right to make changes without further notice to any products
herein. Freescale makes no warranty, representation, or guarantee regarding the
suitability of its products for any particular purpose, nor does Freescale assume any
liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation consequential or incidental
damages. “Typical” parameters that may be provided in Freescale data sheets and/or
specifications can and do vary in different applications, and actual performance may
vary over time. All operating parameters, including “typicals,” must be validated for
each customer application by customer’s technical experts. Freescale does not convey
any license under its patent rights nor the rights of others. Freescale sells products
pursuant to standard terms and conditions of sale, which can be found at the following
address: http://www.reg.net/v2/webservices/Freescale/Docs/TermsandConditions.htm.
Freescale, the Freescale logo, AltiVec, C--5, CodeTest, CodeWarrior, ColdFire,
C--Ware, Energy Efficient Solutions logo, Kinetis, mobileGT, PowerQUICC, Processor
Expert, QorIQ, Qorivva, StarCore, Symphony, and VortiQa are trademarks of
Freescale Semiconductor, Inc., Reg. U.S. Pat. & Tm. Off. Airfast, BeeKit, BeeStack,
ColdFire+, CoreNet, Flexis, MagniV, MXC, Platform in a Package, QorIQ Qonverge,
QUICC Engine, Ready Play, SafeAssure, SMARTMOS, TurboLink, Vybrid, and Xtrinsic
are trademarks of Freescale Semiconductor, Inc. All other product or service names
are the property of their respective owners.
E 2012 Freescale Semiconductor, Inc.
Document Number: AFT05MS031N
Rev. 0, 6/2012
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