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2SB647A

更新时间：2025-07-09 02:11:56

品牌：HITACHI

描述：Silicon PNP Epitaxial

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概述
数据手册

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2SB647A 概述

Silicon PNP Epitaxial PNP硅外延

2SB647A 数据手册

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2SB647, 2SB647A

Silicon PNP Epitaxial

Application

•

Low frequency power amplifier

Complementary pair with 2SD667/A

Outline

TO-92MOD

1. Emitter

2. Collector

3. Base

2SB647, 2SB647A

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

V_CBO

V_CEO

V_EBO

I_C

2SB647

–120

–80

2SB647A

–120

–100

–5

Unit

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

–5

–1

Collector peak current

Collector power dissipation

Junction temperature

Storage temperature

i_C(peak)

P_C

–2

0.9

°C

150

Tstg

–55 to +150

Electrical Characteristics (Ta = 25°C)

2SB647

2SB647A

Item

Symbol Min Typ Max Min Typ Max Unit Test conditions

Collector to base

breakdown voltage

V_(BR)CBO–120 —

—

–120 —

—

I_C= –10 µA, I_E= 0

I_C= –1 mA, R_BE= ∞

I_E= –10 µA, I_C= 0

Collector to emitter

breakdown voltage

V_(BR)CEO–80

—

–100 —

Emitter to base breakdown V_(BR)EBO–5

voltage

—

–5

—

Collector cutoff current

DC current transfer ratio

I_CBO

h_FE1

—

–10

—

–10 µA V_CB= –100 V, I_E= 0

320 60

200

V_CE= –5 V,

I_C= –150 mA*²

h_FE2

—

V_CE= –5 V,

I_C= –500 mA*²

Collector to emitter

saturation voltage

V_CE(sat)

V_BE

f_T

–1

I_C= –500 mA,

I_B= –50 mA*²

Base to emitter voltage

–1.5

–1.5 V

V_CE= –5 V,

I_C= –150 mA*²

Gain bandwidth product

—

140

—

140

—

MHz V_CE= –5 V, I_C= –150 mA

Collector output capacitance Cob

V_CB= –10 V, I_E= 0

f = 1 MHz

Notes: 1. The 2SB647 and 2SB647A are grouped by h_FE1as follows.

2. Pulse test

2SB647

60 to 120

100 to 200 160 to 320

100 to 200

2SB647A

—

2SB647, 2SB647A

Maximum Collector Dissipation

Curve

Typical Output Characteristics

–1.0

–0.8

–0.6

–0.4

–0.2

1.2

0.8

0.4

–0.5mA

I_B= 0

100

150

–2

–4

–6

–8

–10

Collector to Emitter Voltage V_CE(V)

Ambient Tmperature Ta (°C)

DC Current Transfer Ratio

vs. Collector Current

Typical Transfer Characteristics

600

500

400

300

200

100

–500

V_CE= –5 V

Pulse

V_CE= –5 V

Pulse

–200

–100

–50

–20

–10

–5

–25

–2

–1

–0.2 –0.4 –0.6 –0.8 –1.0

Base to Emitter Voltage V_BE(V)

–1

–3

–10 –30 –100 –300 –1,000

Collector Current I_C(mA)

2SB647, 2SB647A

Saturation Voltage

vs. Collector Current

–0.6

–0.5

–0.4

–0.3

–0.2

–0.1

–1.2

–1.0

I_C= 10 I_B

Pulse

–0.8 V_BE(sat)

–0.6

–0.4

Ta = 75°C

–25

–0.2

V_CE(sat)

–1

–3

–10 –30 –100 –300 –1,000

Collector Current I_C(mA)

Gain Bandwidth Product

vs. Collector Current

Collector Output Capacitance vs.

Collector to Base Voltage

240

200

160

120

200

100

f = 1 MHz

_E= 0

V_CE= –5 V

–10

–1

–30

–100

–300

–1,000

–2

–5 –10 –20

–50 –100

Collector Current I_C(mA)

Collector to Base Voltage V_CB(V)

Unit: mm

4.8 ± 0.3

3.8 ± 0.3

0.65 ± 0.1

0.75 Max

0.60 Max

0.5 ± 0.1

0.5

1.27

2.54

Hitachi Code

JEDEC

TO-92 Mod

—

EIAJ

Conforms

Weight (reference value) 0.35 g

Cautions

1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,

Hitachi bears no responsibility for problems that may arise with third party’s rights, including

intellectual property rights, in connection with use of the information contained in this document.

2. Products and product specifications may be subject to change without notice. Confirm that you have

received the latest product standards or specifications before final design, purchase or use.

3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,

contact Hitachi’s sales office before using the product in an application that demands especially high

quality and reliability or where its failure or malfunction may directly threaten human life or cause risk

of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,

traffic, safety equipment or medical equipment for life support.

4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly

for maximum rating, operating supply voltage range, heat radiation characteristics, installation

conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used

beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable

failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-

safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other

consequential damage due to operation of the Hitachi product.

5. This product is not designed to be radiation resistant.

6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without

written approval from Hitachi.

7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor

products.

Hitachi, Ltd.

Semiconductor & Integrated Circuits.

Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan

Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109

URL

NorthAmerica

Europe

: http:semiconductor.hitachi.com/

: http://www.hitachi-eu.com/hel/ecg

Asia (Singapore)

Asia (Taiwan)

: http://www.has.hitachi.com.sg/grp3/sicd/index.htm

: http://www.hitachi.com.tw/E/Product/SICD_Frame.htm

Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm

Japan

: http://www.hitachi.co.jp/Sicd/indx.htm

For further information write to:

Hitachi Semiconductor

(America) Inc.

Hitachi Europe GmbH

Hitachi Asia (Hong Kong) Ltd.

Group III (Electronic Components)

7/F., North Tower, World Finance Centre,

Harbour City, Canton Road, Tsim Sha Tsui,

Kowloon, Hong Kong

Tel: <852> (2) 735 9218

Fax: <852> (2) 730 0281

Hitachi Asia Pte. Ltd.

16 Collyer Quay #20-00

Hitachi Tower

Singapore 049318

Tel: 535-2100

Electronic components Group

Dornacher Stra§e 3

D-85622 Feldkirchen, Munich

Germany

Tel: <49> (89) 9 9180-0

Fax: <49> (89) 9 29 30 00

179 East Tasman Drive,

San Jose,CA 95134

Tel: <1> (408) 433-1990

Fax: <1>(408) 433-0223

Fax: 535-1533

Hitachi Asia Ltd.

Taipei Branch Office

3F, Hung Kuo Building. No.167,

Tun-Hwa North Road, Taipei (105)

Tel: <886> (2) 2718-3666

Fax: <886> (2) 2718-8180

Telex: 40815 HITEC HX

Hitachi Europe Ltd.

Electronic Components Group.

Whitebrook Park

Lower Cookham Road

Maidenhead

Berkshire SL6 8YA, United Kingdom

Tel: <44> (1628) 585000

Fax: <44> (1628) 778322

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