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SIGC06T60G_05

更新时间：2025-07-12 10:19:11

品牌：INFINEON

描述：IGBT3 Chip

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SIGC06T60G_05 概述

IGBT3 Chip IGBT3芯片

SIGC06T60G_05 数据手册

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SIGC06T60G

IGBT³Chip

FEATURES:

This chip is used for:

600V Trench & Field Stop technology

low V_CE(sat)

low turn-off losses

short tail current

positive temperature coefficient

easy paralleling

power module

discrete components

Applications:

drives

white goods

resonant applications

Chip Type

SIGC06T60G

V_CE

I_Cn

10A

Die Size

Package

sawn on foil

Ordering Code

Q67050-

A4344-A101

600V

2.44 x 2.42 mm²

MECHANICAL PARAMETER:

Raster size

2.44 x 2.42

Emitter pad size

Gate pad size

1.558 x 1.577

mm²

0.361 x 0.513

Area total / active

Thickness

5.9 / 3.6

mm²

µm

150

Wafer size

deg

Flat position

Max. possible chips per wafer

Passivation frontside

Emitter metallization

2485 pcs

Photoimide

3200 nm AlSiCu

1400 nm Ni Ag –system

suitable for epoxy and soft solder die bonding

Collector metallization

Die bond

electrically conductive glue or solder

Wire bond

Al, <500µm

Reject ink dot size

Æ 0.65mm ; max 1.2mm

store in original container, in dry nitrogen,

< 6 month at an ambient temperature of 23°C

Recommended storage environment

Edited by INFINEON Technologies AI PS DD CLS, L7521A, Edition 2, 27.01.2005

SIGC06T60G

MAXIMUM RATINGS:

Parameter

Symbol

V_{C E}

Value

Unit

Collector-emitter voltage, T = 25 °C

600

1 )

DC collector current, limited by T

I_C

jmax

Pulsed collector current, t_plimited by T

Gate emitter voltage

I_cpuls

V_GE

±20

jmax

Operating junction and storage temperature

T_j, T_{s t g}

-40 ... +175

°C

Tvj = 150°C

Tvj = 25°C

SC data, V_GE= 15V, V_CC= 360V

µs

^{1 )}depending on thermal properties of assembly

STATIC CHARACTERISTICS (tested on chip), T =25 °C, unless otherwise specified

Value

typ.

Parameter

Symbol

Conditions

Unit

min.

max.

Collector-emitter breakdown voltage

Collector-emitter saturation voltage

Gate-emitter threshold voltage

Zero gate voltage collector current

Gate-emitter leakage current

Integrated gate resistor

V_(BR)CES

V_CE(sat)

V_GE(th)

I_CES

V_GE=0V , I_C= 2mA

V_GE=15V, I_C=10A

I_C=150µA , V_GE=V_CE

V_CE=600V , V_GE=0V

V_CE=0V , V_GE=20V

600

1.1

5.0

1.5

5.8

1.9

6.5

0.6

300

µA

I_GES

R_Gint

none

ELECTRICAL CHARACTERISTICS (verified by design/characterization):

Value

Parameter

Symbol

Unit

Conditions

min. typ.

551

max.

Input capacitance

C_iss

C_oss

C_rss

V_{C E}=25V,

Output capacitance

V_GE=0V,

f=1MHz

Reverse transfer capacitance

SWITCHING CHARACTERISTICS (verified by design/characterization), inductive load

Value

min. typ.

Parameter

Symbol

Unit

Conditions

T_j=125° C

V_{C C}=300V,

I_C=10A ,

max.

Turn-on delay time

Rise time

t_d(on)

t_r

t_{d(of f )}

t_f

Turn-off delay time

Fall time

120

130

V_GE=-15/15V,

R_G= 27W

²⁾values also influenced by parasitic L- and C- in measurement and package.

Edited by INFINEON Technologies AI PS DD CLS, L7521A, Edition 2, 27.01.2005

SIGC06T60G

CHIP DRAWING:

Edited by INFINEON Technologies AI PS DD CLS, L7521A, Edition 2, 27.01.2005

SIGC06T60G

FURTHER ELECTRICAL CHARACTERISTICS:

This chip data sheet refers to the

device data sheet

DESCRIPTION:

AQL 0,65 for visual inspection according to failure catalog

Electrostatic Discharge Sensitive Device according to MIL-STD 883

Test-Normen Villach/Prüffeld

Published by

Infineon Technologies AG,

Bereich Kommunikation

St.-Martin-Strasse 53,

D-81541 München

Attention please!

The information herein is given to describe certain components and shall not be considered as warranted

characteristics.

Terms of delivery and rights to technical change reserved.

We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,

regarding circuits, descriptions and charts stated herein.

Infineon Technologies is an approved CECC manufacturer.

Information

For further information on technology, delivery terms and conditions and prices please contact your nearest

Infineon Technologies Office in Germany or our Infineon Technologies Representatives world-wide (see

address list).

Warnings

Due to technical requirements components may contain dangerous substances. For information on the types

in question please contact your nearest Infineon Technologies Office.

Infineon Technologies components may only be used in life-support devices or systems with the express

written approval of Infineon Technologies, if a failure of such components can reasonably be expected to

cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or

system. Life support devices or systems are intended to be implanted in the human body, or to support

and / or maintain and sustain and / or protect human life. If they fail, it is reasonable to assume that the

health of the user or other persons may be endangered.

Edited by INFINEON Technologies AI PS DD CLS, L7521A, Edition 2, 27.01.2005

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