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IRFD9120

更新时间：2025-07-08 02:08:50
品牌：INTERSIL
描述：1.0A, 100V, 0.6 Ohm, P-Channel Power MOSFET

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IRFD9120 概述

1.0A, 100V, 0.6 Ohm, P-Channel Power MOSFET 1.0A ， 100V ， 0.6欧姆，P沟道功率MOSFET

IRFD9120 数据手册

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IRFD9120  
Data Sheet  
July 1999  
File Number 2285.3  
1.0A, 100V, 0.6 Ohm, P-Channel Power  
MOSFET  
Features  
• 1.0A, 100V  
This advanced power MOSFET is designed, tested, and  
guaranteed to withstand a specified level of energy in the  
breakdown avalanche mode of operation. These are  
P-Channel enhancement mode silicon gate power field  
effect transistors designed for applications such as switching  
regulators, switching convertors, motor drivers, relay drivers  
and drivers for high power bipolar switching transistors  
requiring high speed and low gate drive power. These types  
can be operated directly from integrated circuits.  
• r  
= 0.6Ω  
DS(ON)  
• Single Pulse Avalanche Energy Rated  
• SOA is Power Dissipation Limited  
• Nanosecond Switching Speeds  
• Linear Transfer Characteristics  
• High Input Impedance  
Symbol  
Formerly developmental type TA17501.  
D
Ordering Information  
PART NUMBER  
PACKAGE  
BRAND  
IRFD9120  
G
IRFD9120  
HEXDIP  
NOTE: When ordering, use the entire part number.  
S
Packaging  
HEXDIP  
DRAIN  
GATE  
SOURCE  
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.  
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999  
4-45  
IRFD9120  
o
Absolute Maximum Ratings  
T = 25 C, Unless Otherwise Specified  
C
IRFD9120  
-100  
UNITS  
Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V  
V
V
DS  
Drain to Gate Voltage (R  
GS  
= 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V  
-100  
DGR  
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I  
-1.0  
A
D
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I  
-8.0  
A
DM  
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V  
GS  
±20  
V
Maximum Power Dissipation (Figure 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P  
1.0  
W
D
o
Linear Derating Factor (Figure 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  
Single Pulse Avalanche Energy Rating (Note 4). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E  
0.008  
370  
W/ C  
mJ  
AS  
o
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T  
Maximum Temperature for Soldering  
T
-55 to 150  
C
J, STG  
o
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T  
300  
260  
C
L
o
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T  
C
pkg  
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the  
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.  
NOTE:  
o
o
1. T = 25 C to 125 C.  
J
o
Electrical Specifications  
T
= 25 C, Unless Otherwise Specified  
C
PARAMETER  
SYMBOL  
TEST CONDITIONS  
= 0V, (Figure 9)  
MIN TYP MAX UNITS  
Drain to Source Breakdown Voltage  
Gate to Threshold Voltage  
BV  
I
= -250µA, V  
-100  
-
-
-
-4  
V
V
DSS  
D GS  
V
V
V
V
V
V
= V , I = -250µA  
DS  
-2  
GS(TH)  
GS  
DS  
DS  
DS  
GS  
D
Zero Gate Voltage Drain Current  
I
= Rated BV  
, V  
DSS GS  
= 0V  
-
-
-25  
-250  
-
µA  
µA  
A
DSS  
o
= 0.8 x Rated BV  
, V  
= 0V, T = 125 C  
-
-
DSS GS  
, V = -10V  
DS(ON) MAX GS  
C
On-State Drain Current (Note 2)  
Gate to Source Leakage Current  
I
> I  
D(ON)  
x r  
-1.0  
-
D(ON)  
I
= ±20V  
-
-
±500  
0.6  
-
nA  
Ω
GSS  
Drain to Source On Resistance (Note 2)  
Forward Transconductance (Note 2)  
Turn-On Delay Time  
r
I
= -0.8A, V  
= -10V, (Figures 7, 8)  
-
0.5  
1.2  
25  
50  
50  
50  
16  
DS(ON)  
D
GS  
g
V
< 50V, I = -0.8A (Figure 11)  
0.8  
S
DS  
DD  
D
fs  
t
V
R
R
= 0.5 x Rated BV  
, I = -1.0A,  
DSS  
-
-
-
-
-
50  
ns  
ns  
ns  
ns  
nC  
d(ON)  
D
= 9.1Ω, V  
= -10V, (Figures 16, 17)  
G
L
GS  
= 50Ω for V  
Rise Time  
t
100  
100  
100  
20  
r
= -50V  
DD  
Turn-Off Delay Time  
t
d(OFF)  
MOSFET Switching Times are Essentially Indepen-  
dent of Operating Temperature  
Fall Time  
t
f
Total Gate Charge  
Q
V
= -10V, I = -1.0A, V = 0.8 x Rated BV  
DS DSS  
g(TOT)  
GS  
D
(Gate to Source + Gate to Drain)  
(Figures 13, 18, 19)  
Gate Charge is Essentially Independent of Operating  
Temperature  
Gate to Source Charge  
Gate to Drain “Miller” Charge  
Input Capacitance  
Q
Q
-
-
-
-
-
-
9
-
-
-
-
-
-
nC  
nC  
pF  
pF  
pF  
nH  
gs  
7
gd  
C
V
= -25V, V = 0V, f = 1MHz, (Figure 10)  
GS  
300  
200  
50  
ISS  
DS  
Output Capacitance  
C
OSS  
Reverse Transfer Capacitance  
Internal Drain Inductance  
C
RSS  
L
Measured From the Drain Modified MOSFET  
Lead, 2.0mm (0.08in) From Symbol Showing the In-  
4.0  
D
S
Header to Center of Die  
ternal Devices  
Inductances  
Internal Source Inductance  
L
Measured From the Source  
Lead, 2.0mm (0.08in) From  
Header to Source Bonding  
Pad  
-
6.0  
-
nH  
D
L
D
G
L
S
S
o
Thermal Resistance Junction to Ambient  
4-46  
R
Typical Socket Mount  
-
-
120  
C/W  
θJA  
IRFD9120  
Source to Drain Diode Specifications  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN  
TYP  
MAX  
-1.0  
-8.0  
UNITS  
Continuous Source to Drain Current  
I
ModifiedMOSFETSymbol  
Showing the Integral  
Reverse P-N Junction  
Diode  
-
-
-
-
A
A
SD  
D
S
Pulse Source to Drain Current  
(Note 3)  
I
SDM  
G
o
Source to Drain Diode Voltage (Note 2)  
Reverse Recovery Time  
Reverse Recovery Charge  
NOTES:  
V
T
= 25 C, I  
o
= -1.0A, V  
SD GS  
= 0V, (Figure 12)  
-
-
-
-
-1.5  
V
SD  
C
t
T = 150 C, I  
J
= -4.0A, dI /dt = 100A/µs  
SD  
150  
0.9  
-
-
ns  
µC  
rr  
SD  
SD  
o
Q
T = 150 C, I  
= -4.0A, dI /dt = 100A/µs  
RR  
J
SD  
2. Pulse test: pulse width ≤ 80µs, duty cycle ≤ 2%.  
3. Repetitive rating: pulse width limited by maximum junction temperature.  
o
4. V  
= 25V, starting T = 25 C, L = 555mH, R = 25Ω, Peak I = 1.0A (Figures 14, 15).  
J G AS  
DD  
Typical Performance Curves Unless Otherwise Specified  
1.2  
1.0  
0.8  
-1.0  
-0.8  
-0.6  
-0.4  
0.6  
0.4  
-0.2  
0
0.2  
0
25  
50  
75  
100  
125  
150  
0
25  
50  
75  
100  
125  
150  
o
o
T , AMBIENT TEMPERATURE ( C)  
T , AMBIENT TEMPERATURE ( C)  
A
A
FIGURE 1. NORMALIZED POWER DISSIPATION vs AMBIENT  
TEMPERATURE  
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs  
AMBIENT TEMPERATURE  
10  
-5  
PULSE DURATION = 80µs  
DUTY CYCLE = 0.5% MAX.  
V
= -7V  
GS  
10µs  
V
= -10V  
GS  
-4  
-3  
-2  
-1  
0
100µs  
1
V
= -6V  
1ms  
GS  
10ms  
0.1  
OPERATION IN THIS AREA  
100ms  
IS LIMITED BY r  
DS(ON)  
V
= -5V  
= -4V  
GS  
o
T
T
= 25 C  
C
J
= MAX RATED  
V
DC  
0.01  
GS  
SINGLE PULSE  
0
-10  
-20  
-30  
-40  
-50  
1
10  
100  
V
, DRAIN TO SOURCE VOLTAGE (V)  
V , DRAIN TO SOURCE VOLTAGE (V)  
DS  
DS  
FIGURE 3. FORWARD BIAS SAFE OPERATING AREA  
FIGURE 4. OUTPUT CHARACTERISTICS  
4-47  
IRFD9120  
Typical Performance Curves Unless Otherwise Specified (Continued)  
-5  
-4  
-3  
-2  
-1  
0
-5  
-4  
-3  
-2  
-1  
0
o
PULSE DURATION = 80µs  
DUTY CYCLE = 0.5% MAX.  
T
= -55 C  
J
o
V
= -7V  
GS  
T
= 25 C  
V
= -8V  
V
≥ I  
x r  
MAX.  
J
GS  
DS  
D(ON)  
DS(ON)  
V
= -9V  
GS  
V
= -10V  
GS  
V
= -6V  
GS  
PULSE DURATION = 80µs  
DUTY CYCLE = 0.5% MAX.  
o
= 125 C  
T
J
V
= -5V  
GS  
V
= -4V  
-3  
GS  
0
-2  
-4  
-5  
-1  
-2  
-3  
V
-4  
-5  
-6  
-7  
V
, DRAIN TO SOURCE VOLTAGE (V)  
DS  
, GATE TO SOURCE VOLTAGE (V)  
GS  
FIGURE 5. SATURATION CHARACTERISTICS  
FIGURE 6. TRANSFER CHARACTERISTICS  
1.6  
1.2  
0.8  
0.4  
2.2  
1.8  
1.4  
1.0  
0.6  
V
= -10V, I = -8A  
D
GS  
PULSE DURATION = 80µs  
DUTY CYCLE = 0.5% MAX.  
V
= -10V  
GS  
V
= -20V  
GS  
0
0.2  
0
-2  
-4  
I , DRAIN CURRENT (A)  
-6  
-8  
-40  
0
40  
80  
120  
D
o
T , JUNCTION TEMPERATURE ( C)  
J
NOTE: Heating effect of 2µs pulse is minimal.  
FIGURE 7. DRAIN TO SOURCE ON RESISTANCE vs GATE  
VOLTAGE AND DRAIN CURRENT  
FIGURE 8. NORMALIZED DRAIN TO SOURCE ON  
RESISTANCE vs JUNCTION TEMPERATURE  
1.25  
500  
400  
300  
200  
100  
V
= 0V, f = 1MHz  
PULSE DURATION = 80µs  
DUTY CYCLE = 0.5% MAX.  
GS  
C
C
C
= C  
+ C  
ISS  
GS  
GD  
= C  
GD  
RSS  
OSS  
1.15  
1.05  
≈ C + C  
DS  
GD  
C
C
ISS  
OSS  
0.95  
0.85  
0.75  
C
RSS  
0
-10  
-30  
-40  
-50  
-20  
0
-40  
0
40  
80  
120  
o
T , JUNCTION TEMPERATURE ( C)  
V
, DRAIN TO SOURCE VOLTAGE (V)  
DS  
J
FIGURE 9. NORMALIZED DRAIN TO SOURCE BREAKDOWN  
VOLTAGE vs JUNCTION TEMPERATURE  
FIGURE 10. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE  
4-48  
IRFD9120  
Typical Performance Curves Unless Otherwise Specified (Continued)  
3
2
1
-100  
PULSE DURATION = 80µs  
PULSE DURATION = 80µs  
DUTY CYCLE = 0.5% MAX.  
DUTY CYCLE = 0.5% MAX.  
-10  
o
T
= 150 C  
J
o
T
T
T
= -55 C  
J
J
J
o
o
T
= 25 C  
J
= 25 C  
-1.0  
-0.1  
o
= 125 C  
0
-0.4  
-0.6  
-0.8  
-1.0  
-1.2  
-1.4  
-1.6  
-1.8  
0
-2  
-4  
-6  
I
, DRAIN CURRENT (A)  
V
, SOURCE TO DRAIN VOLTAGE (V)  
SD  
D
FIGURE 11. TRANSCONDUCTANCE vs DRAIN CURRENT  
0
FIGURE 12. SOURCE TO DRAIN DIODE VOLTAGE  
I
= -4A  
D
-5  
-10  
-15  
-20  
V
= -80V  
DS  
V
V
= -50V  
= -20V  
DS  
DS  
0
4
8
12  
16  
20  
Q
, TOTAL GATE CHARGE (nC)  
g(TOT)  
FIGURE 13. GATE TO SOURCE VOLTAGE vs GATE CHARGE  
fd  
Test Circuits and Waveforms  
V
DS  
t
AV  
L
0
VARY t TO OBTAIN  
P
+
R
REQUIRED PEAK I  
G
AS  
V
DD  
-
DUT  
0V  
V
DD  
t
P
I
AS  
V
GS  
V
DS  
I
AS  
t
P
0.01Ω  
BV  
DSS  
FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT  
FIGURE 15. UNCLAMPED ENERGY WAVEFORMS  
4-49  
IRFD9120  
Test Circuits and Waveforms (Continued)  
t
t
ON  
OFF  
t
t
d(OFF)  
d(ON)  
t
t
f
r
0
10%  
10%  
R
L
DUT  
-
V
DS  
90%  
90%  
V
DD  
R
G
+
V
0
V
GS  
GS  
10%  
50%  
50%  
90%  
PULSE WIDTH  
FIGURE 16. SWITCHING TIME TEST CIRCUIT  
FIGURE 17. RESISTIVE SWITCHING WAVEFORMS  
-V  
DS  
(ISOLATED  
SUPPLY)  
CURRENT  
REGULATOR  
0
V
DS  
DUT  
12V  
BATTERY  
0.2µF  
50kΩ  
0.3µF  
Q
V
GS  
gs  
Q
D
S
gd  
Q
g(TOT)  
G
DUT  
V
DD  
0
I
G(REF)  
0
+V  
DS  
I
CURRENT  
I CURRENT  
G
D
SAMPLING  
RESISTOR  
SAMPLING  
RESISTOR  
I
G(REF)  
FIGURE 18. GATE CHARGE TEST CIRCUIT  
FIGURE 19. GATE CHARGE WAVEFORMS  
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.  
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-  
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and  
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result  
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.  
For information regarding Intersil Corporation and its products, see web site http://www.intersil.com  
Sales Office Headquarters  
NORTH AMERICA  
EUROPE  
ASIA  
Intersil Corporation  
Intersil SA  
Mercure Center  
100, Rue de la Fusee  
1130 Brussels, Belgium  
TEL: (32) 2.724.2111  
FAX: (32) 2.724.22.05  
Intersil (Taiwan) Ltd.  
7F-6, No. 101 Fu Hsing North Road  
Taipei, Taiwan  
Republic of China  
TEL: (886) 2 2716 9310  
FAX: (886) 2 2715 3029  
P. O. Box 883, Mail Stop 53-204  
Melbourne, FL 32902  
TEL: (407) 724-7000  
FAX: (407) 724-7240  
4-50  

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