概述
数据手册2SD2399 概述
isc Silicon NPN Power Transistor ISC的硅NPN功率晶体管
2SD2399 数据手册
通过下载2SD2399数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。
PDF下载INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SC2139
DESCRIPTION
·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 400V (Min)
·High Switching Speed
APPLICATIONS
·Switching regulator and high voltage switching applications.
·High speed DC-DC converter applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
MAX
500
400
6
UNIT
V
V
V
Collector Current-Continuous
Base Current-Continuous
10
A
IB
2
A
Collector Power Dissipation
@TC=25℃
PC
100
150
-65~150
W
℃
℃
Tj
Junction Temperature
Tstg
Storage Temperature Range
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SC2139
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
V(BR)CEO
V(BR)CBO
V(BR)EBO
PARAMETER
CONDITIONS
MIN
400
500
6
TYP.
MAX
UNIT
Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0
V
V
V
V
V
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
DC Current Gain
IC= 1mA; IE= 0
IE= 1mA; IC= 0
IC= 5A; IB= 0.5A
IC= 5A; IB= 0.5A
IC= 5A; VCE= 5V
VCB= 400V; IE=
VEB= 6V; IC= 0
1.5
2.0
VCE
(sat)
VBE
(sat)
hFE
10
ICBO
Collector Cutoff Current
0.1
1.0
mA
mA
IEBO
Emitter Cutoff Current
Switching Times
Rise Time
1.0
2.0
1.0
μs
μs
μs
tr
tstg
tf
VCC= 200V; IB1= -IB2= 0.5A;
RL= 40Ω
Storage Time
Fall Time
isc Website：www.iscsemi.cn
2SD2399 相关器件
| 型号 | 制造商 | 描述 | 价格 | 文档 |
| 2SD2399C7K | ROHM | Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220FN, 3 PIN | 获取价格 |
|
| 2SD2399K | ROHM | Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220FN, 3 PIN | 获取价格 |
|
| 2SD2400 | ROHM | TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE | 获取价格 |
|
| 2SD2400 | ISC | Silicon NPN Power Transistors | 获取价格 |
|
| 2SD2400 | SAVANTIC | Silicon NPN Power Transistors | 获取价格 |
|
| 2SD2400/D | ROHM | Power Bipolar Transistor, 1.5A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220FN, 3 PIN | 获取价格 |
|
| 2SD2400/DF | ROHM | Power Bipolar Transistor, 1.5A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220FN, 3 PIN | 获取价格 |
|
| 2SD2400/E | ROHM | Power Bipolar Transistor, 1.5A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220FN, 3 PIN | 获取价格 |
|
| 2SD2400/F | ROHM | Power Bipolar Transistor, 1.5A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220FN, 3 PIN | 获取价格 |
|
| 2SD2400A | ROHM | POWER TRANSISTOR | 获取价格 |
|
2SD2399 相关文章
超越EUV！下一代光刻技术来了
- 2025-04-23
- 10
PMOS开关电路全面指南：原理、操作与故障排查
- 2025-04-23
- 10
Intel 18A工艺细节曝光，英特尔这次稳了？
- 2025-04-23
- 14
国内首发！Arm® Cortex®M7+M4双核异构MCU破解高能效难题
- 2025-04-23
- 10
