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2SA1006

更新时间：2025-07-13 07:59:59
品牌：JMNIC
描述：Silicon PNP Power Transistors

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免费 PCB/SMT

2SA1006 概述

Silicon PNP Power Transistors 硅PNP功率晶体管

2SA1006 数据手册

通过下载2SA1006数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。

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JMnic  
Product Specification  
Silicon PNP Power Transistors  
2SA1006 2SA1006A 2SA1006B  
DESCRIPTION  
·With TO-220 package  
·Complement to type 2SC2336,  
2SC2336A,2SC2336B  
APPLICATIONS  
·Audio frequency power amplifier  
·High frequency power amplifier  
PINNING  
PIN  
1
DESCRIPTION  
Emitter  
Collector;connected to  
mounting base  
2
Fig.1 simplified outline (TO-220) and symbol  
3
Base  
Absolute maximum ratings(Ta=25℃)  
SYMBOL  
PARAMETER  
CONDITIONS  
VALUE  
-180  
-200  
-250  
-180  
-200  
-250  
-5  
UNIT  
2SA1006  
VCBO  
Open emitter  
V
2SA1006A  
2SA1006B  
2SA1006  
Collector-base voltage  
VCEO  
Open base  
V
2SA1006A  
2SA1006B  
Collector-emitter voltage  
VEBO  
IC  
Emitter-base voltage  
Collector current  
Open collector  
V
A
A
-1.5  
ICM  
Collector current-Peak  
-3.0  
Ta=25℃  
TC=25℃  
1.5  
PT  
Total power dissipation  
W
25  
Tj  
Junction temperature  
Storage temperature  
150  
℃
℃
Tstg  
-55~150  
JMnic  
Product Specification  
Silicon PNP Power Transistors  
2SA1006 2SA1006A 2SA1006B  
CHARACTERISTICS  
Tj=25℃ unless otherwise specified  
SYMBOL  
VCEsat  
VBEsat  
ICBO  
PARAMETER  
CONDITIONS  
MIN  
TYP.  
MAX  
-1.0  
-1.5  
-1  
UNIT  
V
Collector-emitter saturation voltage IC=-0.5A; IB=-50mA  
Base-emitter saturation voltage  
Collector cut-off current  
Emitter cut-off current  
DC current gain  
IC=-0.5A ;IB=-50mA  
VCB=-150V ;IE=0  
V
μA  
μA  
IEBO  
VEB=-3V; IC=0  
-1  
hFE-1  
hFE-2  
Cob  
IC=-5mA ; VCE=-5V  
IC=-150mA ; VCE=-5V  
IE=0 ; VCB=-10V,f=1MHz  
IC=-100mA ; VCE=10V  
30  
60  
DC current gain  
320  
Output capacitance  
Transition frequency  
45  
80  
pF  
fT  
MHz  
‹ hFE-2 Classifications  
R
Q
P
60-120  
100-200  
160-320  
2
JMnic  
Product Specification  
Silicon PNP Power Transistors  
2SA1006 2SA1006A 2SA1006B  
PACKAGE OUTLINE  
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)  
3
JMnic  
Product Specification  
Silicon PNP Power Transistors  
2SA1006 2SA1006A 2SA1006B  
4
JMnic  
Product Specification  
Silicon PNP Power Transistors  
2SA1006 2SA1006A 2SA1006B  
5

2SA1006 相关器件

型号 制造商 描述 价格 文档
2SA1006A NEC PNP/NPN SILICON EPITAXIAL TRANSISTOR 获取价格
2SA1006A SAVANTIC Silicon PNP Power Transistors 获取价格
2SA1006A ISC Silicon PNP Power Transistors 获取价格
2SA1006AP NEC Power Bipolar Transistor, 1.5A I(C), 200V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN 获取价格
2SA1006AP ISC Transistor 获取价格
2SA1006AQ NEC Power Bipolar Transistor, 1.5A I(C), 200V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN 获取价格
2SA1006AR ISC Transistor 获取价格
2SA1006AR NEC 1.5A, 200V, PNP, Si, POWER TRANSISTOR, TO-220, 3 PIN 获取价格
2SA1006B NEC PNP/NPN SILICON EPITAXIAL TRANSISTOR 获取价格
2SA1006B SAVANTIC Silicon PNP Power Transistors 获取价格

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