MCP14E4中文资料_数据手册_规格书

MCP14E3/MCP14E4/MCP14E5

4.0A Dual High-Speed Power MOSFET Drivers With Enable

Features

General Description

• High Peak Output Current: 4.0A (typical)

The MCP14E3/MCP14E4/MCP14E5 devices are a

family of 4.0A buffers/MOSFET drivers. Dual-inverting,

dual-noninvertering, and complementary outputs are

standard logic options offered.

• Independent Enable Function for Each Driver

Output

• Low Shoot-Through/Cross-Conduction Current in

Output Stage

The MCP14E3/MCP14E4/MCP14E5 drivers are

capable of operating from a 4.5V to 18V single power

supply and can easily charge and discharge 2200 pF

gate capacitance in under 15 ns (typical). They provide

low impedance in both the ON and OFF states to

ensure the MOSFET’s intended state will not be

affected, even by large transients. The MCP14E3/

MCP14E4/MCP14E5 inputs may be driven directly

from either TTL or CMOS (2.4V to 18V).

• Wide Input Supply Voltage Operating Range:

- 4.5V to 18V

• High Capacitive Load Drive Capability:

- 2200 pF in 15 ns (typical)

- 5600 pF in 26 ns (typical)

• Short Delay Times: 50 ns (typical)

• Latch-Up Protected: Will Withstand 1.5A Reverse

Current

Additional control of the MCP14E3/MCP14E4/

MCP14E5 outputs is allowed by the use of separate

enable functions. The ENB_A and ENB_B pins are

active high and are internally pulled up to V_DD. The pins

maybe left floating for standard operation.

• Logic Input Will Withstand Negative Swing Up To

5V

• Space-Saving Packages:

- 8-Lead 6x5 DFN, PDIP, SOIC

The MCP14E3/MCP14E4/MCP14E5 dual-output 4.0A

driver family is offered in both surface-mount and pin-

through-hole packages with a -40°C to +125°C

temperature rating. The low thermal resistance of the

thermally enhanced DFN package allows for greater

power dissipation capability for driving heavier

capacitive or resistive loads.

Applications

• Switch Mode Power Supplies

• Pulse Transformer Drive

• Line Drivers

• Motor and Solenoid Drive

These devices are highly latch-up resistant under any

conditions within their power and voltage ratings. They

are not subject to damage when up to 5V of noise

spiking (of either polarity) occurs on the ground pin.

They can accept, without damage or logic upset, up to

1.5A of reverse current being forced back into their

outputs. All terminals are fully protect against

Electrostatic Discharge (ESD) up to 4 kV.

Package Types

MCP14E4

8-Pin

MCP14E4

8-Pin

MCP14E3

MCP14E5

MCP14E3

MCP14E5

6x5 DFN ⁽¹⁾

PDIP/SOIC

ENB_A

IN A

ENB_B

OUT A

V_DD

ENB_B

OUT A

V_DD

ENB_B

OUT A

V_DD

ENB_B

ENB_A

8

7

6

5

1

IN A 2

GND 3

IN B 4

OUT A

V_DD

OUT A

V_DD

OUT A

V_DD

GND

IN B

OUT B

Note 1: Exposed pad of the DFN package is electrically isolated.

DS22062B-page 1

MCP14E3/MCP14E4/MCP14E5

Functional Block Diagram

V_DD

Inverting

V_DD

Output

Internal

Pull-up

Non-inverting

Enable

4.7 V

Input

Dual Inverting

MCP14E3

MCP14E4

MCP14E5

Effective

Input C = 20 pF

(Each Input)

4.7 V

Dual Noninverting

One Inverting, One Noninverting

GND

DS22062B-page 2

MCP14E3/MCP14E4/MCP14E5

† Notice: Stresses above those listed under "Maximum

Ratings" may cause permanent damage to the device. This is

a stress rating only and functional operation of the device at

those or any other conditions above those indicated in the

operational sections of this specification is not intended.

Exposure to maximum rating conditions for extended periods

1.0

ELECTRICAL

CHARACTERISTICS

Absolute Maximum Ratings †

Supply Voltage ................................................................+20V

Input Voltage ...............................(V_DD+ 0.3V) to (GND – 5V)

Enable Voltage.............................(V_DD+ 0.3V) to (GND - 5V)

Input Current (V_IN>V_DD)................................................50 mA

Package Power Dissipation (T_A= 50°C)

may affect device reliability.

8L-DFN ....................................................................... Note 3

8L-PDIP ........................................................................1.10W

8L-SOIC.....................................................................665 mW

DC CHARACTERISTICS (NOTE 2)

Electrical Specifications: Unless otherwise indicated, T_A= +25°C, with 4.5V ≤ V_DD≤ 18V.

Parameters

Sym

Min

Typ

Max

Units

Conditions

Input

Logic ‘1’, High Input Voltage

Logic ‘0’, Low Input Voltage

Input Current

V_IH

V_IL

I_IN

2.4

—

–1

-5

1.5

1.3

—

0.8

V

1

µA 0V ≤ V_IN≤ V_DD

Input Voltage

V_IN

—

V_DD+0.3

V

Output

High Output Voltage

Low Output Voltage

Output Resistance, High

Output Resistance, Low

Peak Output Current

V_OH

V_OL

R_OH

R_OL

I_PK

V_DD– 0.025

—

0.025

3.5

3.0

—

V

Ω

A

DC Test

—

DC Test

2.5

4.0

>1.5

I_OUT= 10 mA, V_DD= 18V

V_DD= 18V (Note 2)

Duty cycle ≤ 2%, t ≤ 300 µs

Latch-Up Protection With-

stand Reverse Current

I_REV

—

Switching Time (Note 1)

Rise Time

t_R

t_F

—

15

18

30

ns

Figure 4-1, Figure 4-2

C_L= 2200 pF

Fall Time

Figure 4-1, Figure 4-2

C_L= 2200 pF

Propagation Delay Time

t_D1

t_D2

—

46

50

55

ns

Figure 4-1, Figure 4-2

Enable Function (ENB_A, ENB_B)

High-Level Input Voltage

Low-Level Input Voltage

Hysteresis

V_{EN_H}

1.60

1.30

0.10

40

1.90

2.20

0.30

85

2.90

2.40

0.60

115

V

V_DD= 12V, LO to HI Transition

V_DD= 12V, HI to LO Transition

V_{EN_L}

V_HYST

I_ENBL

Enable Leakage Current

µA V_DD= 12V,

ENB_A = ENB_B = GND

Propagation Delay Time

t_D3

t_D4

—

60

50

—

ns

Figure 4-3 (Note 1)

Note 1: Switching times ensured by design.

2: Tested during characterization, not production tested.

3: Package power dissipation is dependent on the copper pad area on the PCB.

DS22062B-page 3

MCP14E3/MCP14E4/MCP14E5

DC CHARACTERISTICS (NOTE 2) (CONTINUED)

Electrical Specifications: Unless otherwise indicated, T_A= +25°C, with 4.5V ≤ V_DD≤ 18V.

Parameters

Power Supply

Sym

Min

Typ

Max

Units

Conditions

Supply Voltage

Supply Current

V_DD

I_DD

4.5

—

18.0

2.00

V

1.60

mA V_{IN_A}= 3V, V_{IN_B}= 3V,

ENB_A = ENB_B = High

I_DD

—

0.60

1.20

1.40

0.55

1.00

0.90

1.40

1.80

0.75

1.20

mA V_{IN_A}= 0V, V_{IN_B}= 0V,

ENB_A = ENB_B = High

mA V_{IN_A}= 3V, V_{IN_B}= 0V,

ENB_A = ENB_B = High

mA V_{IN_A}= 0V, V_{IN_B}= 3V,

ENB_A = ENB_B = High

mA V_{IN_A}= 3V, V_{IN_B}= 3V,

ENB_A = ENB_B = Low

mA V_{IN_A}= 0V, V_{IN_B}= 0V,

ENB_A = ENB_B = Low

mA V_{IN_A}= 3V, V_{IN_B}= 0V,

ENB_A = ENB_B = Low

mA V_{IN_A}= 0V, V_{IN_B}= 3V,

ENB_A = ENB_B = Low

Note 1: Switching times ensured by design.

2: Tested during characterization, not production tested.

3: Package power dissipation is dependent on the copper pad area on the PCB.

DS22062B-page 4

MCP14E3/MCP14E4/MCP14E5

DC CHARACTERISTICS (OVER OPERATING TEMPERATURE RANGE)

Electrical Specifications: Unless otherwise indicated, operating temperature range with 4.5V ≤ V_DD≤ 18V.

Parameters

Sym

Min

Typ

Max

Units

Conditions

Input

Logic ‘1’, High Input Voltage V_IH

2.4

—

0.8

+10

V

Logic ‘0’, Low Input Voltage

Input Current

V_IL

I_IN

–10

µA

0V ≤ V_IN≤ V_DD

Output

High Output Voltage

Low Output Voltage

Output Resistance, High

Output Resistance, Low

Switching Time (Note 1)

Rise Time

V_OHV_DD– 0.025

—

0.025

6.0

V

Ω

DC TEST

V_OL

R_OH

R_OL

—

DC TEST

3.0

I_OUT= 10 mA, V_DD= 18V

5.0

t_R

t_F

—

25

28

40

ns

Figure 4-1, Figure 4-2

C_L= 2200 pF

Fall Time

Figure 4-1, Figure 4-2

C_L= 2200 pF

Delay Time

t_D1

t_D2

—

50

70

ns

Figure 4-1, Figure 4-2

Enable Function (ENB_A, ENB_B)

High-Level Input Voltage

Low-Level Input Voltage

Hysteresis

V_{EN_H}

V_{EN_L}

V_HYST

I_ENBL

t_D3

1.60

1.30

—

2.20

1.80

0.40

87

2.90

2.40

—

V

V_DD= 12V, LO to HI Transition

V_DD= 12V, HI to LO Transition

V

Enable Leakage Current

Propagation Delay Time

Power Supply

40

115

—

µA

ns

V_DD= 12V, ENB_A = ENB_B = GND

—

50

Figure 4-3

t_D4

—

60

—

Supply Voltage

V_DD

I_DD

4.5

—

18.0

3.0

V

Supply Current

2.0

mA

V_{IN_A}= 3V, V_{IN_B}= 3V,

ENB_A = ENB_B = High

I_DD

—

0.8

1.5

1.8

0.6

1.1

2.0

2.8

0.8

1.8

mA

V_{IN_A}= 0V, V_{IN_B}= 0V,

ENB_A = ENB_B = High

V_{IN_A}= 3V, V_{IN_B}= 0V,

ENB_A = ENB_B = High

V_{IN_A}= 0V, V_{IN_B}= 3V,

ENB_A = ENB_B = High

V_{IN_A}= 3V, V_{IN_B}= 3V,

ENB_A = ENB_B = Low

V_{IN_A}= 0V, V_{IN_B}= 0V,

ENB_A = ENB_B = Low

V_{IN_A}= 3V, V_{IN_B}= 0V,

ENB_A = ENB_B = Low

V_{IN_A}= 0V, V_{IN_B}= 3V,

ENB_A = ENB_B = Low

Note 1: Switching times ensured by design.

DS22062B-page 5

MCP14E3/MCP14E4/MCP14E5

TEMPERATURE CHARACTERISTICS

Electrical Specifications: Unless otherwise noted, all parameters apply with 4.5V ≤ V_DD≤ 18V.

Parameters

Sym

Min

Typ

Max

Units

Conditions

Temperature Ranges

Specified Temperature Range

Maximum Junction Temperature

Storage Temperature Range

Package Thermal Resistances

Thermal Resistance, 8L-6x5 DFN

T_A

T_J

T_A

–40

—

+125

+150

°C

–65

θ_JA

—

35.7

—

°C/W Typical four-layer board with

vias to ground plane

Thermal Resistance, 8L-PDIP

Thermal Resistance, 8L-SOIC

θ_JA

—

89.3

—

°C/W

149.5

DS22062B-page 6

MCP14E3/MCP14E4/MCP14E5

2.0

TYPICAL PERFORMANCE CURVES

Note: The graphs and tables provided following this note are a statistical summary based on a limited number of

samples and are provided for informational purposes only. The performance characteristics listed herein are

not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified

operating range (e.g., outside specified power supply range) and therefore outside the warranted range.

Note: Unless otherwise indicated, T_A= +25°C with 4.5V ≤ V_DD≤ 18V.

120

90

60

30

0

100

80

60

40

20

0

10,000 pF

6,800 pF

10,000 pF

6,800 pF

4,700 pF

100 pF

2,200 pF

100 pF

4

6

8

10

12

14

16

18

4

6

8

10

12

14

16

18

Supply Voltage (V)

FIGURE 2-1:

Rise Time vs. Supply

FIGURE 2-4:

Fall Time vs. Supply

Voltage.

60

50

40

30

20

10

60

50

40

30

20

10

12V

18V

5V

18V

0

100

1000

10000

100

1000

10000

Capacitive Load (pF)

FIGURE 2-2:

Rise Time vs. Capacitive

FIGURE 2-5:

Fall Time vs. Capacitive

Load.

60

24

V_DD= 18V

V_DD= 12V

22

20

18

16

14

12

10

55

t_D1

t_FALL

50

t_RISE

45

t_D2

40

35

-40 -25 -10

5

20 35 50 65 80 95 110 125

Temperature (°C)

4

5

6

7

8

9

10

11

12

Input Amplitude (V)

FIGURE 2-3:

Rise and Fall Times vs.

FIGURE 2-6:

Propagation Delay vs. Input

Temperature.

Amplitude.

DS22062B-page 7

MCP14E3/MCP14E4/MCP14E5

Typical Performance Curves (Continued)

Note: Unless otherwise indicated, T_A= +25°C with 4.5V ≤ V_DD≤ 18V.

140

120

100

80

70

60

50

40

V_DD= 12V

t_D1

t_D2

60

40

20

4

6

8

10

12

14

16

18

-40 -25 -10

5

20 35 50 65 80 95 110 125

Temperature (°C)

Supply Voltage (V)

FIGURE 2-7:

Propagation Delay Time vs.

FIGURE 2-10:

Propagation Delay Time vs.

Supply Voltage.

Temperature.

1.4

1.2

1.8

V_DD= 18V

1.6

Input = 1

1.4

1.2

1.0

0.8

0.6

0.4

1.0

0.8

0.6

0.4

0.2

0.0

Input = 1

Input = 0

0.2

4

6

8

10

12

14

16

18

-40 -25 -10

5

20 35 50 65 80 95 110 125

Temperature (°C)

Supply Voltage (V)

FIGURE 2-8:

Quiescent Current vs.

FIGURE 2-11:

Quiescent Current vs.

Supply Voltage.

Temperature.

8

7

6

8

7

V_IN= 5V (MCP14E3)

V_IN= 0V (MCP14E4)

V_IN= 0V (MCP14E3)

V_IN= 5V (MCP14E4)

T_A= 125°C

6

5

4

3

2

1

T_A= 125°C

5

4

3

2

1

T_A= 25°C

4

6

8

10

12

14

16

18

4

6

8

10

12

14

16

18

Supply Voltage (V)

FIGURE 2-9:

Output Resistance (Output

FIGURE 2-12:

Output Resistance (Output

High) vs. Supply Voltage.

Low) vs. Supply Voltage.

DS22062B-page 8

MCP14E3/MCP14E4/MCP14E5

Typical Performance Curves (Continued)

Note: Unless otherwise indicated, T_A= +25°C with 4.5V ≤ V_DD≤ 18V.

120

100

80

60

40

20

0

V_DD= 18V

10,000 pF

50 kHz

100

6,800 pF

100 kHz

80

400 kHz

200 kHz

4,700 pF

60

40

20

0

2,200 pF

650 kHz

100 pF

100

1000

10000

10

100

Frequency (kHz)

1000

Capacitive Load (pF)

FIGURE 2-13:

Capacitive Load.

Supply Current vs.

FIGURE 2-16:

Frequency.

Supply Current vs.

70

V_DD= 12V

10,000 pF

6,800 pF

50 kHz

60

50

60

50

40

30

20

10

100 kHz

200 kHz

4,700 pF

400 kHz

40

30

20

10

0

2,200 pF

650 kHz

100 pF

0

100

1000

10

100

Capacitive Load (pF)

Frequency (kHz)

FIGURE 2-14:

Capacitive Load.

Supply Current vs.

FIGURE 2-17:

Frequency.

Supply Current vs.

35

V_DD= 6V

10,000 pF

6,800 pF

50 kHz

30

25

20

15

30

25

20

15

10

5

100 kHz

400 kHz

200 kHz

4,700 pF

2,200 pF

650 kHz

10

5

100 pF

0

100

1000

10

100

Capacitive Load (pF)

Frequency (kHz)

FIGURE 2-15:

Supply Current vs.

FIGURE 2-18:

Supply Current vs.

Capacitive Load.

Frequency.

DS22062B-page 9

MCP14E3/MCP14E4/MCP14E5

Typical Performance Curves (Continued)

Note: Unless otherwise indicated, T_A= +25°C with 4.5V ≤ V_DD≤ 18V.

2.1

1.9

1.7

1.5

1.3

1.1

0.9

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0.0

V_DD= 18V

V_DD= 12V

V_HI

V_LO

-40 -25 -10

5

20 35 50 65 80 95 110 125

Temperature (°C)

-40 -25 -10

5

20 35 50 65 80 95 110 125

Temperature (°C)

FIGURE 2-19:

Input Threshold vs.

FIGURE 2-22:

Enable Hysteresis vs.

Temperature.

2.0

1.8

1E-06

1E-07

1E-08

V_HI

1.6

V_LO

1.4

1.2

1.0

1E-09

4

6

8

10

12

14

16

18

6

8

10

12

14

16

18

Supply Voltage (V)

Note:

The values on this graph represent the

loss seen by both drivers in a package

during one complete cycle.

FIGURE 2-20:

Voltage.

Input Threshold vs. Supply

For a single driver, divide the stated

value by 2.

For a signal transition of a single driver,

divide the state value by 4.

3.1

2.9

2.7

V_DD= 12V

V_{EN_H}

2.5

2.3

2.1

1.9

1.7

1.5

FIGURE 2-23:

Supply Voltage.

Crossover Energy vs.

V_{EN_L}

-40 -25 -10

5

20 35 50 65 80 95 110 125

Temperature (°C)

FIGURE 2-21:

Enable Threshold vs.

Temperature.

DS22062B-page 10

MCP14E3/MCP14E4/MCP14E5

3.0

PIN DESCRIPTIONS

The descriptions of the pins are listed in Table 3-1.

TABLE 3-1:

PIN FUNCTION TABLE

8-Pin

PDIP, SOIC

8-Pin

Symbol

6x5 DFN

Description

1

2

1

2

ENB_A

IN A

Output A Enable

Input A

3

GND

Ground

4

IN B

Input B

5

OUT B

V_DD

Output B

6

Supply Input

Output A

7

OUT A

ENB_B

NC

8

Output B Enable

Exposed Metal Pad

—

PAD

Note:

Duplicate pins must be connected for proper operation.

3.1

Control Inputs A and B

3.5

Enable A (ENB_A)

The MOSFET driver inputs are a high-impedance TTL/

CMOS compatible input. The inputs also have hystere-

sis between the high and low input levels, allowing

them to be driven from slow rising and falling signals

and to provide noise immunity.

The ENB_A pin is the enable control for Output A. This

enable pin is internally pulled up to V_DDfor active high

operation and can be left floating for standard

operation. When the ENB_A pin is pulled below the

enable pin Low Level Input Voltage (V_{EN_L}), Output A

will be in the off state regardless of the input pin state.

3.2

Outputs A and B

3.6

Enable B (ENB_B)

Outputs A and B are CMOS push-pull outputs that are

capable of sourcing and sinking 4.0A of peak current

(V_DD= 18V). The low output impedance ensures the

gate of the MOSFET will stay in the intended state even

during large transients. These outputs also have a

reverse latch-up rating of 1.5A.

The ENB_B pin is the enable control for Output B. This

enable pin is internally pulled up to V_DDfor active high

operation and can be left floating for standard

operation. When the ENB_B pin is pulled below the

enable pin Low-Level Input Voltage (V_{EN_L}), Output B

will be in the off state regardless of the input pin state.

3.3

Supply Input (V_DD)

3.7

DFN Exposed Pad

V_DDis the bias supply input for the MOSFET driver and

has a voltage range of 4.5V to 18V. This input must be

decoupled to ground with a local ceramic capacitor.

This bypass capacitor provides a localized low-imped-

ance path for the peak currents that are to be provided

to the load.

The exposed metal pad of the DFN package is not

internally connected to any potential. Therefore, this

pad can be connected to a ground plane or other

copper plane on a printed circuit board to aid in heat

removal from the package.

3.4

Ground (GND)

Ground is the device return pin. The ground pin(s)

should have a low impedance connection to the bias

supply source return. High peak currents will flow out

the ground pin(s) when the capacitive load is being

discharged.

DS22062B-page 11

MCP14E3/MCP14E4/MCP14E5

4.0

4.1

APPLICATION INFORMATION

General Information

V_DD= 18V

1 µF

MOSFET drivers are high-speed, high current devices

which are intended to source/sink high peak currents to

charge/discharge the gate capacitance of external

MOSFETs or IGBTs. In high frequency switching power

supplies, the PWM controller may not have the drive

capability to directly drive the power MOSFET. A MOS-

FET driver like the MCP14E3/MCP14E4/MCP14E5

family can be used to provide additional source/sink

current capability.

0.1 µF

Ceramic

Input

Output

C_L= 2200 pF

MCP14E4

(1/2 MCP14E5)

An additional degree of control has been added to the

MCP14E3/MCP14E4/MCP14E5 family. There are

separate enable functions for each driver that allow for

the immediate termination of the output pulse

regardless of the state of the input signal.

+5V

90%

Input

4.2

MOSFET Driver Timing

10%

0V

The ability of a MOSFET driver to transition from a fully

off state to a fully on state are characterized by the

drivers rise time (t_R), fall time (t_F), and propagation

delays (t_D1and t_D2). The MCP14E3/MCP14E4/

MCP14E5 family of drivers can typically charge and

discharge a 2200 pF load capacitance in 15 ns along

with a typical matched propagation delay of 50 ns.

Figure 4-1 and Figure 4-2 show the test circuit and

timing waveform used to verify the MCP14E3/

MCP14E4/MCP14E5 timing.

18V

90%

t_D1

t_D2

t_F

t_R

Output

0V

10%

FIGURE 4-2:

Waveform.

Non-Inverting Driver Timing

4.3

Enable Function

The ENB_A and ENB_B enable pins allow for indepen-

dent control of OUT A and OUT B respectively. They

are active high and are internally pulled up to V_DDso

that the default state is to enable the driver. These pins

can be left floating for normal operation.

V_DD= 18V

0.1 µF

1 µF

Ceramic

When an enable pin voltage is above the enable pin

high threshold voltage, V_{EN_H}(2.4V typical), that driver

output is enabled and allowed to react to changes in

the INPUT pin voltage state. Likewise, when the enable

pin voltage falls below the enable pin low threshold

voltage, V_{EN_L}(2.0V typical), that driver output is dis-

abled and does not respond the changes in the INPUT

pin voltage state. When the driver is disabled, the out-

put goes to a low state. Refer to Table 4-1 for enable

pin logic. The threshold voltages of the enable function

are compatible with logic levels. Hysteresis is provided

to help increase the noise immunity of the enable

function, avoiding false triggers of the enable signal

during driver switching. For robust designs, it is

recommended that the slew rate of the enable pin

signal be greater than 1 V/ns.

Input

Output

C_L= 2200 pF

MCP14E3

(1/2 MCP14E5)

+5V

90%

Input

0V

10%

t_D1

t_D2

t_F

t_R

18V

90%

10%

Output

There are propagation delays associated with the

driver receiving an enable signal and the output

reacting. These propagation delays, t_D3and t_D4, are

graphically represented in Figure 4-3.

10%

0V

FIGURE 4-1:

Waveform.

Inverting Driver Timing

DS22062B-page 12

MCP14E3/MCP14E4/MCP14E5

TABLE 4-1:

ENB_A

ENABLE PIN LOGIC

MCP14E3

MCP14E4

MCP14E5

ENB_B

IN A

IN B

OUT A

OUT B

OUT A

OUT B

OUT A

OUT B

H

L

H

L

H

L

H

L

H

L

H

L

H

L

H

L

H

L

H

L

H

L

H

L

H

L

H

L

X

L

Placing a ground plane beneath the MCP14E3/

MCP14E4/MCP14E5 will help as a radiated noise

shield as well as providing some heat sinking for power

dissipated within the device.

5V

ENB_x

0V

V_{EN_H}

4.6

Power Dissipation

V_{EN_L}

The total internal power dissipation in a MOSFET driver

is the summation of three separate power dissipation

elements.

t_D3

t_D4

V_DD

EQUATION 4-1:

90%

P_T= P_L+ P_Q+ P_CC

OUT x

Where:

P_T

P_L

=

Total power dissipation

10%

Load power dissipation

0V

P_Q

Quiescent power dissipation

Operating power dissipation

P_CC

FIGURE 4-3:

Enable Timing Waveform.

4.6.1

CAPACITIVE LOAD DISSIPATION

4.4

Decoupling Capacitors

The power dissipation caused by a capacitive load is a

direct function of frequency, total capacitive load, and

supply voltage. The power lost in the MOSFET driver

for a complete charging and discharging cycle of a

MOSFET is:

Careful layout and decoupling capacitors are highly

recommended when using MOSFET drivers. Large

currents are required to charge and discharge

capacitive loads quickly. For example, 2.5A are needed

to charge a 2200 pF load with 18V in 16 ns.

To operate the MOSFET driver over a wide frequency

range with low supply impedance, a ceramic and low

ESR film capacitor are recommended to be placed in

parallel between the driver V_DDand GND. A 1.0 µF low

ESR film capacitor and a 0.1 µF ceramic capacitor

should be used. These capacitors should be placed

close to the driver to minimized circuit board parasitics

and provide a local source for the required current.

EQUATION 4-2:

2

P_L= f × C_T× V_DD

Where:

f

C_T

=

Switching frequency

Total load capacitance

MOSFET driver supply voltage

V_DD

4.5

PCB Layout Considerations

Proper PCB layout is important in a high current, fast

switching circuit to provide proper device operation and

robustness of design. PCB trace loop area and

inductance should be minimized by the use of ground

planes or trace under MOSFET gate drive signals,

separate analog and power grounds, and local driver

decoupling.

DS22062B-page 13

MCP14E3/MCP14E4/MCP14E5

4.6.2

QUIESCENT POWER DISSIPATION

The power dissipation associated with the quiescent

current draw of the MCP14E3/MCP14E4/MCP14E5

depends upon the state of the input and enable pins.

Refer to the DC Characteristic table for the quiescent

current draw for specific combinations of input and

enable pin states. The quiescent power dissipation is:

EQUATION 4-3:

P_Q= (I_QH× D + I_QL× (1 – D)) × V_DD

Where:

I_QH

=

Quiescent current in the high

state

D

=

Duty cycle

I_QL

Quiescent current in the low

state

V_DD

=

MOSFET driver supply voltage

4.6.3

OPERATING POWER DISSIPATION

The operating power dissipation occurs each time the

MOSFET driver output transitions because for a very

short period of time both MOSFETs in the output stage

are on simultaneously. This cross-conduction current

leads to a power dissipation describes as:

EQUATION 4-4:

P_CC= CC × f × V_DD

Where:

CC

=

Cross-conduction constant

(A*sec)

f

=

Switching frequency

V_DD

MOSFET driver supply voltage

DS22062B-page 14

MCP14E3/MCP14E4/MCP14E5

5.0

5.1

PACKAGING INFORMATION

Package Marking Information (Not to Scale)

8-Lead DFN-S (6x5)

Example:

XXXXXXX

XXYYWW

NNN

MCP14E3

e

3

E/MF^^

0814

256

8-Lead PDIP (300 mil)

Example:

MCP14E3

XXXXXXXX

XXXXXNNN

e

3

E/P^^256

0814

YYWW

8-Lead SOIC (150 mil)

Example:

MCP14E3E

XXXXXXXX

XXXXYYWW

e

3

SN^^0814

NNN

256

Legend: XX...X Customer-specific information

Y

YY

WW

NNN

Year code (last digit of calendar year)

Year code (last 2 digits of calendar year)

Week code (week of January 1 is week ‘01’)

Alphanumeric traceability code

e

3

Pb-free JEDEC designator for Matte Tin (Sn)

*

This package is Pb-free. The Pb-free JEDEC designator (

can be found on the outer packaging for this package.

)

e3

Note: In the event the full Microchip part number cannot be marked on one line, it will

be carried over to the next line, thus limiting the number of available

characters for customer-specific information.

DS22062B-page 15

MCP14E3/MCP14E4/MCP14E5

8-Lead Plastic Dual Flat, No Lead Package (MF) – 6x5 mm Body [DFN-S]

PUNCH SINGULATED

Note: For the most current package drawings, please see the Microchip Packaging Specification located at

http://www.microchip.com/packaging

D

e

L

D1

b

N

K

E

E2

E1

EXPOSED

PAD

NOTE 1

1

2

1

NOTE 1

D2

TOP VIEW

BOTTOM VIEW

φ

A2

A

A3

A1

NOTE 2

Units

MILLIMETERS

NOM

Dimension Limits

MIN

MAX

Number of Pins

Pitch

N

e

8

1.27 BSC

0.85

Overall Height

A

–

1.00

0.80

0.05

Molded Package Thickness

Standoff

A2

A1

A3

D

0.65

0.00

0.01

Base Thickness

0.20 REF

4.92 BSC

4.67 BSC

4.00

Overall Length

Molded Package Length

Exposed Pad Length

Overall Width

D1

D2

E

3.85

4.15

5.99 BSC

5.74 BSC

2.31

Molded Package Width

Exposed Pad Width

Contact Width

E1

E2

b

2.16

0.35

0.50

0.20

–

2.46

0.47

0.75

–

0.40

Contact Length

L

0.60

Contact-to-Exposed Pad

Model Draft Angle Top

K

–

φ

–

12°

Notes:

1. Pin 1 visual index feature may vary, but must be located within the hatched area.

2. Package may have one or more exposed tie bars at ends.

3. Dimensioning and tolerancing per ASME Y14.5M.

BSC: Basic Dimension. Theoretically exact value shown without tolerances.

REF: Reference Dimension, usually without tolerance, for information purposes only.

Microchip Technology Drawing C04-113B

DS22062B-page 16

MCP14E3/MCP14E4/MCP14E5

8-Lead Plastic Dual In-Line (P) – 300 mil Body [PDIP]

Note: For the most current package drawings, please see the Microchip Packaging Specification located at

http://www.microchip.com/packaging

N

NOTE 1

E1

3

1

2

D

E

A2

A

L

A1

c

e

eB

b1

b

Units

INCHES

Dimension Limits

MIN

NOM

8

MAX

Number of Pins

Pitch

N

e

.100 BSC

–

Top to Seating Plane

A

–

.210

.195

–

Molded Package Thickness

Base to Seating Plane

Shoulder to Shoulder Width

Molded Package Width

Overall Length

A2

A1

E

.115

.015

.290

.240

.348

.115

.008

.040

.014

–

.130

–

.310

.250

.365

.130

.010

.060

.018

–

.325

.280

.400

.150

.015

.070

.022

.430

E1

D

Tip to Seating Plane

Lead Thickness

L

c

Upper Lead Width

b1

b

Lower Lead Width

Overall Row Spacing §

eB

Notes:

1. Pin 1 visual index feature may vary, but must be located with the hatched area.

2. § Significant Characteristic.

3. Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed .010" per side.

4. Dimensioning and tolerancing per ASME Y14.5M.

BSC: Basic Dimension. Theoretically exact value shown without tolerances.

Microchip Technology Drawing C04-018B

DS22062B-page 17

MCP14E3/MCP14E4/MCP14E5

8-Lead Plastic Small Outline (SN) – Narrow, 3.90 mm Body [SOIC]

Note: For the most current package drawings, please see the Microchip Packaging Specification located at

http://www.microchip.com/packaging

D

e

N

E

E1

NOTE 1

1

2

3

α

h

b

h

c

φ

A2

A

L

A1

L1

β

Units

MILLIMETERS

Dimension Limits

MIN

NOM

MAX

Number of Pins

Pitch

N

e

8

1.27 BSC

Overall Height

A

–

1.75

–

Molded Package Thickness

Standoff §

A2

A1

E

1.25

0.10

–

0.25

Overall Width

6.00 BSC

Molded Package Width

Overall Length

E1

D

h

3.90 BSC

4.90 BSC

Chamfer (optional)

Foot Length

0.25

0.40

–

0.50

1.27

L

–

Footprint

L1

φ

1.04 REF

Foot Angle

0°

0.17

0.31

5°

–

8°

Lead Thickness

Lead Width

c

0.25

0.51

15°

b

Mold Draft Angle Top

Mold Draft Angle Bottom

α

β

5°

15°

Notes:

1. Pin 1 visual index feature may vary, but must be located within the hatched area.

2. § Significant Characteristic.

3. Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed 0.15 mm per side.

4. Dimensioning and tolerancing per ASME Y14.5M.

BSC: Basic Dimension. Theoretically exact value shown without tolerances.

REF: Reference Dimension, usually without tolerance, for information purposes only.

Microchip Technology Drawing C04-057B

DS22062B-page 18

MCP14E3/MCP14E4/MCP14E5

ꢀꢁꢂꢃꢄꢅꢆꢇꢈꢄꢉꢊꢋꢌꢆꢍꢎꢄꢈꢈꢆꢏꢐꢊꢈꢋꢑꢃꢆꢒꢍꢓꢔꢆMꢆꢓꢄꢕꢕꢖꢗꢘꢆꢙꢚꢛꢜꢆꢎꢎꢆ ꢖꢅ!ꢆ"ꢍꢏ#$%

ꢓꢖꢊꢃ& AꢀꢁurꢁꢁpꢀꢀrꢁhpxhtrꢁqꢀhvtꢂꢁyrhrꢁrrꢁurꢁHvpꢀpuvꢁQhpxhtvtꢁTrpvsvphvꢁyphrqꢁhꢁ

u)ꢃꢃꢄvpꢀpuvꢄpꢃhpxhtvt

DS22062B-page 19

MCP14E3/MCP14E4/MCP14E5

NOTES:

DS22062B-page 20

MCP14E3/MCP14E4/MCP14E5

APPENDIX A: REVISION HISTORY

Revision B (April 2008)

The following is the list of modifications:

1. Correct examples in Product identification

System page.

Revision A (September 2007)

• Original Release of this Document.

DS22062B-page 21

MCP14E3/MCP14E4/MCP14E5

NOTES:

DS22062B-page 22

MCP14E3/MCP14E4/MCP14E5

PRODUCT IDENTIFICATION SYSTEM

To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.

Examples:

PART NO.

Device

X

XX

a) MCP14E3-E/MF: 4.0A Dual Inverting

MOSFET Driver,

Temperature Package

Range

8LD DFN package.

b) MCP14E3-E/P:

4.0A Dual Inverting

MOSFET Driver,

Device:

MCP14E3: 4.0A Dual MOSFET Driver, Inverting

MCP14E3T: 4.0A Dual MOSFET Driver, Inverting

Tape and Reel

MCP14E4: 4.0A Dual MOSFET Driver, Non-Inverting

MCP14E4T: 4.0A Dual MOSFET Driver, Non-Inverting

Tape and Reel

8LD PDIP package.

c) MCP14E3-E/SN: 4.0A Dual Inverting

MOSFET Driver,

8LD SOIC package.

MCP14E5: 4.0A Dual MOSFET Driver, Complementary

MCP14E5T: 4.0A Dual MOSFET Driver, Complementary

Tape and Reel

a) MCP14E4-E/MF: 4.0A Dual Non-Inverting

MOSFET Driver,

8LD DFN package.

b) MCP14E4-E/P:

4.0A Dual Non-Inverting

MOSFET Driver,

8LD PDIP package.

Temperature Range:

Package: *

E

=

-40°C to +125°C

MF

P

SN

=

Dual, Flat, No-Lead (6x5 mm Body), 8-lead

Plastic DIP, (300 mil body), 8-lead

Plastic SOIC (150 mil Body), 8-Lead

c) MCP14E4T-E/SN: Tape and Reel,

4.0A Dual Non-Inverting

MOSFET Driver,

8LD SOIC package.

* All package offerings are Pb Free (Lead Free)

a) MCP14E5T-E/MF: Tape and Reel,

4.0A Dual Complementary

MOSFET Driver,

8LD DFN package.

b) MCP14E5-E/P:

4.0A Dual Complementary

MOSFET Driver,

8LD PDIP package.

c) MCP14E5-E/SN: 4.0A Dual Complementary

MOSFET Driver,

8LD SOIC package.

DS22062B-page 23

MCP14E3/MCP14E4/MCP14E5

NOTES:

DS22062B-page 24

Note the following details of the code protection feature on Microchip devices:

•

Microchip products meet the specification contained in their particular Microchip Data Sheet.

•

Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the

intended manner and under normal conditions.

•

There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our

knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data

Sheets. Most likely, the person doing so is engaged in theft of intellectual property.

•

Microchip is willing to work with the customer who is concerned about the integrity of their code.

Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not

mean that we are guaranteeing the product as “unbreakable.”

Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our

products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts

allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.

Information contained in this publication regarding device

applications and the like is provided only for your convenience

and may be superseded by updates. It is your responsibility to

ensure that your application meets with your specifications.

MICROCHIP MAKES NO REPRESENTATIONS OR

WARRANTIES OF ANY KIND WHETHER EXPRESS OR

IMPLIED, WRITTEN OR ORAL, STATUTORY OR

OTHERWISE, RELATED TO THE INFORMATION,

INCLUDING BUT NOT LIMITED TO ITS CONDITION,

QUALITY, PERFORMANCE, MERCHANTABILITY OR

FITNESS FOR PURPOSE. Microchip disclaims all liability

arising from this information and its use. Use of Microchip

devices in life support and/or safety applications is entirely at

the buyer’s risk, and the buyer agrees to defend, indemnify and

hold harmless Microchip from any and all damages, claims,

suits, or expenses resulting from such use. No licenses are

conveyed, implicitly or otherwise, under any Microchip

intellectual property rights.

Trademarks

The Microchip name and logo, the Microchip logo, Accuron,

dsPIC, KEELOQ, KEELOQ logo, MPLAB, PIC, PICmicro,

PICSTART, PRO MATE, rfPIC and SmartShunt are registered

trademarks of Microchip Technology Incorporated in the

U.S.A. and other countries.

FilterLab, Linear Active Thermistor, MXDEV, MXLAB,

SEEVAL, SmartSensor and The Embedded Control Solutions

Company are registered trademarks of Microchip Technology

Incorporated in the U.S.A.

Analog-for-the-Digital Age, Application Maestro, CodeGuard,

dsPICDEM, dsPICDEM.net, dsPICworks, dsSPEAK, ECAN,

ECONOMONITOR, FanSense, In-Circuit Serial

Programming, ICSP, ICEPIC, Mindi, MiWi, MPASM, MPLAB

Certified logo, MPLIB, MPLINK, mTouch, PICkit, PICDEM,

PICDEM.net, PICtail, PIC³²logo, PowerCal, PowerInfo,

PowerMate, PowerTool, REAL ICE, rfLAB, Select Mode, Total

Endurance, UNI/O, WiperLock and ZENA are trademarks of

Microchip Technology Incorporated in the U.S.A. and other

countries.

SQTP is a service mark of Microchip Technology Incorporated

in the U.S.A.

All other trademarks mentioned herein are property of their

respective companies.

Printed on recycled paper.

Microchip received ISO/TS-16949:2002 certification for its worldwide

headquarters, design and wafer fabrication facilities in Chandler and

Tempe, Arizona; Gresham, Oregon and design centers in California

and India. The Company’s quality system processes and procedures

are for its PIC^®MCUs and dsPIC^®DSCs, KEELOQ^®code hopping

devices, Serial EEPROMs, microperipherals, nonvolatile memory and

analog products. In addition, Microchip’s quality system for the design

and manufacture of development systems is ISO 9001:2000 certified.

DS22062B-page 25

WORLDWIDE SALES AND SERVICE

AMERICAS

ASIA/PACIFIC

EUROPE

Corporate Office

Asia Pacific Office

Suites 3707-14, 37th Floor

Tower 6, The Gateway

Harbour City, Kowloon

Hong Kong

Tel: 852-2401-1200

Fax: 852-2401-3431

India - Bangalore

Tel: 91-80-4182-8400

Fax: 91-80-4182-8422

Austria - Wels

Tel: 43-7242-2244-39

Fax: 43-7242-2244-393

2355 West Chandler Blvd.

Chandler, AZ 85224-6199

Tel: 480-792-7200

Fax: 480-792-7277

Technical Support:

http://support.microchip.com

Web Address:

www.microchip.com

Denmark - Copenhagen

Tel: 45-4450-2828

Fax: 45-4485-2829

India - New Delhi

Tel: 91-11-4160-8631

Fax: 91-11-4160-8632

France - Paris

Tel: 33-1-69-53-63-20

Fax: 33-1-69-30-90-79

India - Pune

Tel: 91-20-2566-1512

Fax: 91-20-2566-1513

Australia - Sydney

Tel: 61-2-9868-6733

Fax: 61-2-9868-6755

Atlanta

Duluth, GA

Tel: 678-957-9614

Fax: 678-957-1455

Germany - Munich

Tel: 49-89-627-144-0

Fax: 49-89-627-144-44

Japan - Yokohama

Tel: 81-45-471- 6166

Fax: 81-45-471-6122

China - Beijing

Tel: 86-10-8528-2100

Fax: 86-10-8528-2104

Italy - Milan

Tel: 39-0331-742611

Fax: 39-0331-466781

Korea - Daegu

Tel: 82-53-744-4301

Fax: 82-53-744-4302

Boston

China - Chengdu

Tel: 86-28-8665-5511

Fax: 86-28-8665-7889

Westborough, MA

Tel: 774-760-0087

Fax: 774-760-0088

Netherlands - Drunen

Tel: 31-416-690399

Fax: 31-416-690340

Korea - Seoul

China - Hong Kong SAR

Tel: 852-2401-1200

Fax: 852-2401-3431

Tel: 82-2-554-7200

Fax: 82-2-558-5932 or

82-2-558-5934

Chicago

Itasca, IL

Tel: 630-285-0071

Fax: 630-285-0075

Spain - Madrid

Tel: 34-91-708-08-90

Fax: 34-91-708-08-91

China - Nanjing

Tel: 86-25-8473-2460

Fax: 86-25-8473-2470

Malaysia - Kuala Lumpur

Tel: 60-3-6201-9857

Fax: 60-3-6201-9859

Dallas

Addison, TX

Tel: 972-818-7423

Fax: 972-818-2924

UK - Wokingham

Tel: 44-118-921-5869

Fax: 44-118-921-5820

China - Qingdao

Tel: 86-532-8502-7355

Fax: 86-532-8502-7205

Malaysia - Penang

Tel: 60-4-227-8870

Fax: 60-4-227-4068

Detroit

Farmington Hills, MI

Tel: 248-538-2250

Fax: 248-538-2260

China - Shanghai

Tel: 86-21-5407-5533

Fax: 86-21-5407-5066

Philippines - Manila

Tel: 63-2-634-9065

Fax: 63-2-634-9069

Kokomo

Kokomo, IN

Tel: 765-864-8360

Fax: 765-864-8387

China - Shenyang

Tel: 86-24-2334-2829

Fax: 86-24-2334-2393

Singapore

Tel: 65-6334-8870

Fax: 65-6334-8850

China - Shenzhen

Tel: 86-755-8203-2660

Fax: 86-755-8203-1760

Taiwan - Hsin Chu

Tel: 886-3-572-9526

Fax: 886-3-572-6459

Los Angeles

Mission Viejo, CA

Tel: 949-462-9523

Fax: 949-462-9608

China - Wuhan

Tel: 86-27-5980-5300

Fax: 86-27-5980-5118

Taiwan - Kaohsiung

Tel: 886-7-536-4818

Fax: 886-7-536-4803

Santa Clara

Santa Clara, CA

Tel: 408-961-6444

Fax: 408-961-6445

China - Xiamen

Tel: 86-592-2388138

Fax: 86-592-2388130

Taiwan - Taipei

Tel: 886-2-2500-6610

Fax: 886-2-2508-0102

Toronto

Mississauga, Ontario,

Canada

Tel: 905-673-0699

Fax: 905-673-6509

China - Xian

Tel: 86-29-8833-7252

Fax: 86-29-8833-7256

Thailand - Bangkok

Tel: 66-2-694-1351

Fax: 66-2-694-1350

China - Zhuhai

Tel: 86-756-3210040

Fax: 86-756-3210049

01/02/08

DS22062B-page 26

型号	制造商	描述	价格	文档
MCP14E4EMF	MICROCHIP	4.0A Dual High-Speed Power MOSFET Drivers With Enable	获取价格
MCP14E4EP	MICROCHIP	4.0A Dual High-Speed Power MOSFET Drivers With Enable	获取价格
MCP14E4ESN	MICROCHIP	4.0A Dual High-Speed Power MOSFET Drivers With Enable	获取价格
MCP14E4TEMF	MICROCHIP	4.0A Dual High-Speed Power MOSFET Drivers With Enable	获取价格
MCP14E4TEP	MICROCHIP	4.0A Dual High-Speed Power MOSFET Drivers With Enable	获取价格
MCP14E4TESN	MICROCHIP	4.0A Dual High-Speed Power MOSFET Drivers With Enable	获取价格
MCP14E5	MICROCHIP	The MCP14E3/E4/E5 devices are a family of 4 A, dual output MOSFET gate drivers with separate enabl	获取价格
MCP14E5-E	MICROCHIP	4.0A Dual High-Speed Power MOSFET Drivers With Enable	获取价格
MCP14E5EMF	MICROCHIP	4.0A Dual High-Speed Power MOSFET Drivers With Enable	获取价格
MCP14E5EP	MICROCHIP	4.0A Dual High-Speed Power MOSFET Drivers With Enable	获取价格

MCP14E4

MCP14E4 概述

MCP14E4 数据手册

MCP14E4 相关器件

MCP14E4 相关文章

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