TC4469MJDG
更新时间：2024-12-03 13:10:50
品牌：MICROCHIP
描述：1.2 A 4 CHANNEL, AND GATE BASED MOSFET DRIVER, CDIP14, 0.300 INCH, CERDIP-14
概述
规格参数
数据手册TC4469MJDG 概述
1.2 A 4 CHANNEL, AND GATE BASED MOSFET DRIVER, CDIP14, 0.300 INCH, CERDIP-14 MOSFET 驱动器
TC4469MJDG 规格参数
| 是否无铅： | 不含铅 | 是否Rohs认证： | 符合 |
| 生命周期： | Obsolete | 零件包装代码： | DIP |
| 包装说明： | DIP, | 针数： | 14 |
| Reach Compliance Code： | compliant | ECCN代码： | EAR99 |
| HTS代码： | 8542.39.00.01 | 风险等级： | 5.62 |
| Is Samacsys： | N | 高边驱动器： | YES |
| 接口集成电路类型： | AND GATE BASED MOSFET DRIVER | JESD-30 代码： | R-GDIP-T14 |
| JESD-609代码： | e3 | 长度： | 19.305 mm |
| 功能数量： | 4 | 端子数量： | 14 |
| 最高工作温度： | 125 °C | 最低工作温度： | -55 °C |
| 标称输出峰值电流： | 1.2 A | 封装主体材料： | CERAMIC, GLASS-SEALED |
| 封装代码： | DIP | 封装形状： | RECTANGULAR |
| 封装形式： | IN-LINE | 峰值回流温度（摄氏度）： | NOT SPECIFIED |
| 认证状态： | Not Qualified | 座面最大高度： | 5.08 mm |
| 最大供电电压： | 18 V | 最小供电电压： | 4.5 V |
| 表面贴装： | NO | 技术： | CMOS |
| 温度等级： | MILITARY | 端子面层： | MATTE TIN |
| 端子形式： | THROUGH-HOLE | 端子节距： | 2.54 mm |
| 端子位置： | DUAL | 处于峰值回流温度下的最长时间： | NOT SPECIFIED |
| 断开时间： | 0.1 µs | 接通时间： | 0.1 µs |
| 宽度： | 7.62 mm | Base Number Matches： | 1 |
TC4469MJDG 数据手册
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TC4467/TC4468/TC4469
Logic-Input CMOS Quad Drivers
Features
General Description
• High Peak Output Current: 1.2 A
• Wide Operating Range:
- 4.5 V to 18 V
• Symmetrical Rise/Fall Times: 25 nsec
• Short, Equal Delay Times: 75 nsec
• Latch-proof. Will Withstand 500 mA Inductive
Kickback
• 3 Input Logic Choices:
- AND / NAND / AND + Inv
• ESD Protection on All Pins: 2 kV
The TC4467/TC4468/TC4469 devices are a family of
four-output CMOS buffers/MOSFET drivers with 1.2 A
peak drive capability. Unlike other MOSFET drivers,
these devices have two inputs for each output. The
inputs are configured as logic gates: NAND (TC4467),
AND (TC4468) and AND/INV (TC4469).
The TC4467/TC4468/TC4469 drivers can continuously
source up to 250 mA into ground referenced loads.
These devices are ideal for direct driving low current
motors or driving MOSFETs in a H-bridge configuration
for higher current motor drive (see Section 5.0 for
details). Having the logic gates onboard the driver can
help to reduce component count in many designs.
Applications
The TC4467/TC4468/TC4469 devices are very robust
and highly latch-up resistant. They can tolerate up to
5 V of noise spiking on the ground line and can handle
up to 0.5 A of reverse current on the driver outputs.
The TC4467/4468/4469 devices are available in
commercial, industrial and military temperature ranges.
• General Purpose CMOS Logic Buffer
• Driving All Four MOSFETs in an H-Bridge
• Direct Small Motor Driver
• Relay or Peripheral Drivers
• CCD Driver
• Pin-Switching Network Driver
Package Types
14-Pin PDIP/CERDIP
VDD
14
1A
1B
2A
1
2
3
4
5
6
7
13 1Y
12 2Y
11 3Y
10 4Y
TC4467
TC4468
TC4469
2B
3A
3B
9
8
4B
4A
GND
16-Pin SOIC (Wide)
VDD
VDD
1Y
2Y
3Y
4Y
4B
4A
1A
1B
2A
2B
3A
3B
GND
GND
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
TC4467
TC4468
TC4469
9
2002 Microchip Technology Inc.
DS21425B-page 1
TC4467/TC4468/TC4469
Logic Diagrams
TC4467
TC4468
TC4469
TC446X
V
V
V
DD
DD
DD
V
DD
14
14
14
1
2
1
2
1
2
1A
1B
1A
1B
1A
1B
13
12
11
10
13
12
11
10
13
12
11
10
1Y
2Y
3Y
4Y
1Y
2Y
3Y
4Y
1Y
2Y
3Y
4Y
3
4
3
4
3
4
2A
2B
2A
2B
2A
2B
Output
5
6
5
6
5
6
3A
3B
3A
3B
3A
3B
8
9
8
9
8
9
4A
4B
4A
4B
4A
4B
7
7
7
GND
GND
GND
DS21425B-page 2
2002 Microchip Technology Inc.
TC4467/TC4468/TC4469
†Notice: Stresses above those listed under "Maximum
Ratings" may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at
those or any other conditions above those indicated in the
operation listings of this specification is not implied. Exposure
to maximum rating conditions for extended periods may affect
device reliability.
1.0
ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings†
Supply Voltage ...............................................................+20 V
Input Voltage .............................(GND – 5 V) to (VDD + 0.3 V)
Package Power Dissipation: (TA ≤ 70°C)
PDIP...................................................................800 mW
CERDIP .............................................................840 mW
SOIC ..................................................................760 mW
Package Thermal Resistance:
CERDIP RθJ-A ...................................................100°C/W
CERDIP RθJ-C.....................................................23°C/W
PDIP R
..........................................................80°C/W
θJ-A
PDIP RθJ-C..........................................................35°C/W
SOIC RθJ-A..........................................................95°C/W
SOIC RθJ-C..........................................................28°C/W
Operating Temperature Range:
C Version ...................................................0°C to +70°C
E Version.................................................-40°C to +85°C
M Version ..............................................-55°C to +125°C
Maximum Chip Temperature.......................................+150°C
Storage Temperature Range.........................-65°C to +150°C
ELECTRICAL SPECIFICATIONS
Electrical Characteristics: Unless otherwise noted, TA = +25°C, with 4.5 V ≤ VDD ≤ 18 V.
Parameters
Sym
Min
Typ
Max
Units
Conditions
Input
Logic 1, High Input Voltage
Logic 0, Low Input Voltage
Input Current
VIH
VIL
IIN
2.4
—
-1.0
—
—
—
VDD
0.8
+1.0
V
V
µA
Note 3
Note 3
0 V ≤ VIN ≤ VDD
Output
High Output Voltage
Low Output Voltage
Output Resistance
Peak Output Current
Continuous Output Current
VOH
VOL
RO
IPK
IDC
VDD – 0.025
—
—
10
1.2
—
—
0.15
15
V
V
ILOAD = 100 µA (Note 1)
ILOAD = 10 mA (Note 1)
IOUT = 10 mA, VDD = 18 V
—
—
—
—
—
—
Ω
—
A
mA
300
500
—
Single Output
Total Package
4.5 V ≤ VDD ≤ 16 V
—
500
Latch-Up Protection Withstand
Reverse Current
I
mA
Switching Time (Note 1)
Rise Time
Fall Time
Delay Time
Delay Time
tR
tF
tD1
tD2
—
—
—
—
15
15
40
40
25
25
75
75
nsec Figure 4-1
nsec Figure 4-1
nsec Figure 4-1
nsec Figure 4-1
Power Supply
Power Supply Current
Power Supply Voltage
IS
VDD
—
4.5
1.5
—
4
18
mA
V
Note 2
Note 1: Totem pole outputs should not be paralleled because the propagation delay differences from one to the other could cause one driver to
drive high a few nanoseconds before another. The resulting current spike, although short, may decrease the life of the device. Switching
times are ensured by design.
2: When driving all four outputs simultaneously in the same direction, VDD will be limited to 16 V. This reduces the chance that internal dv/dt
will cause high-power dissipation in the device.
3: The input threshold has approximately 50 mV of hysteresis centered at approximately 1.5 V. Input rise times should be kept below 5 µsec
to avoid high internal peak currents during input transitions. Static input levels should also be maintained above the maximum, or below
the minimum, input levels specified in the "Electrical Characteristics" to avoid increased power dissipation in the device.
2002 Microchip Technology Inc.
DS21425B-page 3
TC4467/TC4468/TC4469
ELECTRICAL SPECIFICATIONS (OPERATING TEMPERATURES)
Electrical Characteristics: Unless otherwise noted, over operating temperature range with 4.5 V ≤ VDD ≤ 18 V.
Parameters
Sym
Min
Typ
Max
Units
Conditions
Input
Logic 1, High Input Voltage
Logic 0, Low Input Voltage
Input Current
VIH
VIL
IIN
2.4
—
-10
—
—
—
—
0.8
10
V
V
µA
Note 3
Note 3
0 V ≤ VIN ≤ VDD
Output
High Output Voltage
Low Output Voltage
Output Resistance
Peak Output Current
Continuous Output Current
VOH
VOL
RO
IPK
IDC
VDD – 0.025
—
—
20
1.2
—
—
0.30
30
V
V
ILOAD = 100 µA (Note 1)
ILOAD = 10 mA (Note 1)
IOUT = 10 mA, VDD = 18 V
—
—
—
—
—
—
Ω
—
A
mA
300
500
—
Single Output
Total Package
4.5 V ≤ VDD ≤ 16 V
—
500
Latch-Up Protection Withstand
Reverse Current
I
mA
Switching Time (Note 1)
Rise Time
Fall Time
Delay Time
Delay Time
tR
tF
tD1
tD2
—
—
—
—
15
15
40
40
50
50
100
100
nsec Figure 4-1
nsec Figure 4-1
nsec Figure 4-1
nsec Figure 4-1
Power Supply
Power Supply Current
Power Supply Voltage
IS
VDD
—
4.5
—
—
8
18
mA
V
Note 2
Note 1: Totem pole outputs should not be paralleled because the propagation delay differences from one to the other could cause one driver to
drive high a few nanoseconds before another. The resulting current spike, although short, may decrease the life of the device. Switching
times are ensured by design.
2: When driving all four outputs simultaneously in the same direction, VDD will be limited to 16 V. This reduces the chance that internal dv/dt
will cause high-power dissipation in the device.
3: The input threshold has approximately 50 mV of hysteresis centered at approximately 1.5 V. Input rise times should be kept below 5 µsec
to avoid high internal peak currents during input transitions. Static input levels should also be maintained above the maximum, or below
the minimum, input levels specified in the "Electrical Characteristics" to avoid increased power dissipation in the device.
TRUTH TABLE
Part No.
TC4467 NAND
TC4468 AND
TC4469 AND/INV
Inputs A
Inputs B
Outputs TC446X
H
H
L
H
L
H
L
H
H
L
L
H
H
H
H
H
L
L
L
H
L
L
L
L
H
H
L
H
L
H
L
H
L
L
L
L
Legend: H = High L = Low
DS21425B-page 4
2002 Microchip Technology Inc.
TC4467/TC4468/TC4469
2.0
TYPICAL PERFORMANCE CURVES
Note: The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein are
not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
Note: T = +25°C, with 4.5 V ≤ V ≤ 18 V.
A
DD
140
120
100
80
140
120
100
80
2200 pF
2200 pF
1500 pF
1600 pF
1000 pF
1000 pF
60
60
40
40
470 pF
100 pF
470 pF
100 pF
20
0
20
0
3
5
7
9
11
13
15
17
19
3
5
7
9
11
13
(V)
15
17
19
V
(V)
V
SUPPLY
SUPPLY
FIGURE 2-1:
Rise Time vs. Supply
FIGURE 2-4:
Fall Time vs. Supply
Voltage.
Voltage.
140
120
140
120
100
5 V
5 V
100
80
80
60
40
10 V
15 V
10 V
15 V
60
40
20
20
0
0
100
1000
10,000
100
1000
10,000
C
(pF)
C
(pF)
LOAD
LOAD
FIGURE 2-2:
Rise Time vs. Capacitive
FIGURE 2-5:
Fall Time vs. Capacitive
Load.
Load.
25
80
60
40
20
0
V
C
= 17.5 V
= 470 pF
SUPPLY
LOAD
C
= 470 pF
LOAD
20
t
FALL
D1
15
10
5
t
RISE
t
D2
0
4
6
8
10
12
14
16
18
-50
-25
0
25
50
75
100
125
V
(V)
SUPPLY
TEMPERATURE (C)
FIGURE 2-3:
Rise/Fall Times vs.
FIGURE 2-6:
Propagation Delay Time vs.
Temperature.
Supply Voltage.
2002 Microchip Technology Inc.
DS21425B-page 5
TC4467/TC4468/TC4469
2.0
TYPICAL PERFORMANCE CURVES (CONTINUED)
Note: T = +25°C, with 4.5 V ≤ V ≤ 18 V.
A
DD
140
120
100
80
70
60
50
40
30
20
V
= 12 V
DD
V
V
= 17.5 V
= 470 pF
DD
INPUT RISING
t
D1
IN
t
D2
t
D2
60
t
D1
7
INPUT FALLING
40
20
0
1
2
3
4
5
6
8
9
10
-60 -40
-20
0
20
40
60
80
100
120
V
(V)
C)
DRIVE
FIGURE 2-7:
Input Amplitude vs. Delay
FIGURE 2-10:
Propagation Delay Times
Times.
vs. Temperatures.
3.5
2.5
V
= 17.5 V
DD
3.0
2.5
2.0
1.5
1.0
0.5
0
2.0
1.5
1.0
OUTPUTS = 0
OUTPUTS = 0
OUTPUTS = 1
OUTPUTS = 1
0.5
0
-60 -40
-20
0
20
40
(C)
60
80
100
120
4
6
8
10
V
12
14
16
18
(V)
T
JUNCTION
SUPPLY
FIGURE 2-8:
Quiescent Supply Current
FIGURE 2-11:
Quiescent Supply Current
vs. Supply Voltage.
vs. Temperature.
35
30
25
20
15
10
5
35
30
25
T
= +150C
= +25°C
J
20
15
10
5
T
= +150°C
J
T
J
T
= +25C
J
0
0
4
6
8
10
12
(V)
14
16
18
4
6
8
10
V
12
(V)
14
16
18
V
SUPPLY
SUPPLY
FIGURE 2-9:
High-State Output
FIGURE 2-12:
Low-State Output
Resistance.
Resistance.
DS21425B-page 6
2002 Microchip Technology Inc.
TC4467/TC4468/TC4469
2.0
TYPICAL PERFORMANCE CURVES (CONTINUED)
Note: (Load on single output only).
60
60
50
40
30
20
10
0
V
= 18 V
V
= 18 V
DD
DD
2 MHz
2200 pF
1000 pF
50
40
30
20
10
0
500 kHz
100 pF
200 kHz
20 kHz
100
1000
(pF)
10,000
10
100
1000
10,000
C
FREQUENCY (kHz)
LOAD
FIGURE 2-13:
Supply Current vs.
FIGURE 2-16:
Supply Current vs.
Capacitive Load.
Frequency.
60
60
V
= 12 V
2 MHz
2200 pF
DD
V
= 12 V
DD
50
40
30
20
10
0
50
40
30
20
10
1 MHz
1000 pF
100 pF
500 kHz
200 kHz
20 kHz
0
100
1000
10,000
10
100
FREQUENCY (kHz)
1000
10,000
C
(pF)
LOAD
FIGURE 2-14:
Supply Current vs.
FIGURE 2-17:
Supply Current vs.
Capacitive Load.
Frequency.
60
60
V
= 6 V
V
= 6 V
DD
DD
50
40
30
20
10
50
40
30
20
10
0
2200 pF
2 MHz
1000 pF
100 pF
1 MHz
500 kHz
200 kHz
20 kHz
0
100
1000
10,000
10
100
FREQUENCY (kHz)
1000
10,000
C
(pF)
LOAD
FIGURE 2-15:
Supply Current vs.
FIGURE 2-18:
Supply Current vs.
Capacitive Load.
Frequency.
2002 Microchip Technology Inc.
DS21425B-page 7
TC4467/TC4468/TC4469
3.0
PIN DESCRIPTIONS
The descriptions of the pins are listed in Table 3-1.
TABLE 3-1:
PIN FUNCTION TABLE
14-Pin PDIP,
CERDIP
16-Pin SOIC
(Wide)
Description
Symbol
Symbol
1A
1B
2A
2B
3A
3B
GND
—
4A
4B
4Y
3Y
2Y
1Y
1A
1B
2A
2B
3A
Input A for Driver 1, TTL/CMOS Compatible Input
Input B for Driver 1, TTL/CMOS Compatible Input
Input A for Driver 2, TTL/CMOS Compatible Input
Input B for Driver 2, TTL/CMOS Compatible Input
Input A for Driver 3, TTL/CMOS Compatible Input
Input B for Driver 3, TTL/CMOS Compatible Input
Ground
3B
GND
GND
4A
4B
4Y
3Y
2Y
1Y
Ground
Input A for Driver 4, TTL/CMOS Compatible Input
Input B for Driver 4, TTL/CMOS Compatible Input
Output for Driver 4, CMOS Push-Pull Output
Output for Driver 3, CMOS Push-Pull Output
Output for Driver 2, CMOS Push-Pull Output
Output for Driver 1, CMOS Push-Pull Output
Supply Input, 4.5 V to 18 V
V
V
V
DD
DD
DD
—
Supply Input, 4.5 V to 18 V
DS21425B-page 8
2002 Microchip Technology Inc.
TC4467/TC4468/TC4469
4.4
Power Dissipation
4.0
4.1
DETAILED DESCRIPTION
Supply Bypassing
The supply current versus frequency and supply
current versus capacitive load characteristic curves will
aid in determining power dissipation calculations.
Microchip Technology's CMOS drivers have greatly
reduced quiescent DC power consumption.
Input signal duty cycle, power supply voltage and load
type influence package power dissipation. Given power
dissipation and package thermal resistance, the maxi-
mum ambient operating temperature is easily
calculated. The 14-pin plastic package junction-to-
ambient thermal resistance is 83.3°C/W. At +70°C, the
package is rated at 800 mW maximum dissipation.
Maximum allowable chip temperature is +150°C.
Three components make up total package power
dissipation:
1. Load-caused dissipation (P ).
2. Quiescent power (P ).
3. Transition power (P ).
Large currents are required to charge and discharge
large capacitive loads quickly. For example, charging a
1000 pF load to 18 V in 25 nsec requires 0.72 A from
the device's power supply.
To ensure low supply impedance over a wide frequency
range, a 1 µF film capacitor in parallel with one or two
low-inductance, 0.1 µF ceramic disk capacitors with
short lead lengths (<0.5 in.) normally provide adequate
bypassing.
4.2
Grounding
The TC4467 and TC4469 contain inverting drivers.
Potential drops developed in common ground
impedances from input to output will appear as
negative feedback and degrade switching speed
characteristics. Instead, individual ground returns for
input and output circuits, or a ground plane, should be
used.
L
Q
T
A capacitive-load-caused dissipation (driving MOSFET
gates), is a direct function of frequency, capacitive load
and supply voltage. The power dissipation is:
4.3
Input Stage
The input voltage level changes the no-load or
quiescent supply current. The N-channel MOSFET
input stage transistor drives a 2.5 mA current source
load. With logic “0” outputs, maximum quiescent supply
current is 4 mA. Logic “1” output level signals reduce
quiescent current to 1.4 mA, maximum. Unused driver
EQUATION
PL = fCV2S
f = Switching Frequency
C = Capacitive Load
VS = Supply Voltage
inputs must be connected to V
or V . Minimum
SS
DD
power dissipation occurs for logic “1” outputs.
The drivers are designed with 50 mV of hysteresis,
which provides clean transitions and minimizes output
stage current spiking when changing states. Input volt-
age thresholds are approximately 1.5 V, making any
A
resistive-load-caused dissipation for ground-
referenced loads is a function of duty cycle, load
current and load voltage. The power dissipation is:
voltage greater than 1.5 V, up to V , a logic “1” input.
DD
EQUATION
Input current is less than 1 µA over this range.
PL = D(VS – VL)IL
D = Duty Cycle
VS = Supply Voltage
VL = Load Voltage
IL = Load Current
2002 Microchip Technology Inc.
DS21425B-page 9
TC4467/TC4468/TC4469
A
resistive-load-caused dissipation for supply-
EQUATION
referenced loads is a function of duty cycle, load
current and output voltage. The power dissipation is
PT = fVs(10 × 10–9
)
C = 1000 pF Capacitive Load
VS = 15 V
D = 50%
f = 200 kHz
EQUATION
PL = DVOIL
D = Duty Cycle
VO = Device Output Voltage
IL = Load Current
PD = Package Power Dissipation
= PL + PQ + PT
= 45mW + 35mW + 30mW
Quiescent power dissipation depends on input signal
duty cycle. Logic HIGH outputs result in a lower power
dissipation mode, with only 0.6 mA total current drain
(all devices driven). Logic LOW outputs raise the
current to 4 mA maximum. The quiescent power
dissipation is:
= 110mW
Package power dissipation is the sum of load,
quiescent and transition power dissipations. An
example shows the relative magnitude for each term:
Maximum operating temperature is:
EQUATION
EQUATION
PQ = VS(D(IH) + (1 – D)IL)
TJ – θJA(PD) = 141°C
IH = Quiescent Current with all outputs LOW
(4 mA max.)
IL = Quiescent Current with all outputs HIGH
TJ = Maximum allowable junction temperature
(+150°C)
θJA = Junction-to-ambient thernal resistance
(0.6 mA max.)
(83.3°C/W) 14-pin plastic package
D = Duty Cycle
VS = Supply Voltage
Note: Ambient operating temperature should not
exceed +85°C for "EJD" device or +125°C
for "MJD" device.
Transition power dissipation arises in the complimen-
tary configuration (TC446X) because the output stage
N-channel and P-channel MOS transistors are ON
simultaneously for a very short period when the output
changes. The transition power dissipation is
approximately:
V
DD
Input: 100 kHz,
square wave,
RISE
1 µF Film
0.1 µF Ceramic
t
= t
≤ 10 nsec
FALL
14
1
1A
+5 V
13
V
90%
2
OUT
470 pF
1B
Input
3
4
(A, B)
2A
2B
12
11
10
10%
0V
5
6
V
3A
3B
DD
90%
90%
t
t
D2
D1
t
t
F
R
Output
0 V
8
9
4A
4B
10%
10%
7
FIGURE 4-1:
Switching Time Test Circuit.
DS21425B-page 10
2002 Microchip Technology Inc.
TC4467/TC4468/TC4469
5.0
APPLICATIONS INFORMATION
+12 V
14
Airpax
#M82102-P2
7.5/Step
TC4469
1
2
1133 Red
Motor
3
4
12
Gray
A
B
55
6
11 Yel
10 Blk
8
9
7
FIGURE 5-1:
Stepper Motor Drive.
+5 V to +15 V
14
TC4469
18 V
1
2
13
Direction
3
12
11
10
Rev
4
Fwd
5
6
PWM Speed
Motor
M
8
9
7
FIGURE 5-2:
Quad Driver For H-bridge Motor Control.
2002 Microchip Technology Inc.
DS21425B-page 11
TC4467/TC4468/TC4469
6.0
6.1
PACKAGING INFORMATION
Package Marking Information
14-Lead PDIP (300 mil)
Example:
XXXXXXXXXXXXXX
XXXXXXXXXXXXXX
YYWWNNN
TC4467CPD
YYWWNNN
14-Lead CERDIP (300 mil)
Example:
Example:
XXXXXXXXXXXXXX
XXXXXXXXXXXXXX
YYWWNNN
TC4468EJD
YYWWNNN
16-Lead SOIC (300 mil)
XXXXXXXXXXX
XXXXXXXXXXX
XXXXXXXXXXX
YYWWNNN
TC4469COE
YYWWNNN
Legend: XX...X Customer specific information*
YY
WW
NNN
Year code (last 2 digits of calendar year)
Week code (week of January 1 is week ‘01’)
Alphanumeric traceability code
Note: In the event the full Microchip part number cannot be marked on one line, it will
be carried over to the next line thus limiting the number of available characters
for customer specific information.
*
Standard OTP marking consists of Microchip part number, year code, week code, facility code, mask
rev#, and assembly code.
DS21425B-page 12
2002 Microchip Technology Inc.
TC4467/TC4468/TC4469
14-Lead Plastic Dual In-line (P) – 300 mil (PDIP)
E1
D
2
1
n
α
E
A2
A
L
c
A1
B1
β
eB
p
B
Units
Dimension Limits
INCHES*
NOM
MILLIMETERS
MIN
MAX
MIN
NOM
14
MAX
n
p
A
A2
A1
E
E1
D
L
c
B1
B
Number of Pins
Pitch
Top to Seating Plane
Molded Package Thickness
Base to Seating Plane
Shoulder to Shoulder Width
Molded Package Width
Overall Length
14
.100
.155
.130
2.54
3.94
3.30
.140
.170
.145
3.56
2.92
0.38
7.62
6.10
18.80
3.18
0.20
1.14
0.36
7.87
5
4.32
3.68
.115
.015
.300
.240
.740
.125
.008
.045
.014
.310
5
.313
.250
.750
.130
.012
.058
.018
.370
10
.325
.260
.760
.135
.015
.070
.022
.430
15
7.94
6.35
19.05
3.30
0.29
1.46
0.46
9.40
10
8.26
6.60
19.30
3.43
0.38
1.78
0.56
10.92
15
Tip to Seating Plane
Lead Thickness
Upper Lead Width
Lower Lead Width
Overall Row Spacing
Mold Draft Angle Top
Mold Draft Angle Bottom
§
eB
α
β
5
10
15
5
10
15
* Controlling Parameter
§ Significant Characteristic
Notes:
Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed
.010” (0.254mm) per side.
JEDEC Equivalent: MS-001
Drawing No. C04-005
2002 Microchip Technology Inc.
DS21425B-page 13
TC4467/TC4468/TC4469
14-Lead Ceramic Dual In-line – 300 mil (CERDIP)
14-Pin CERDIP (Narrow)
PIN 1
.300 (7.62)
.230 (5.84)
.098 (2.49) MAX.
.030 (0.76) MIN.
.780 (19.81)
.740 (18.80)
.320 (8.13)
.290 (7.37)
.040 (1.02)
.020 (0.51)
.200 (5.08)
.160 (4.06)
.015 (0.38)
.008 (0.20)
3° MIN.
.200 (5.08)
.125 (3.18)
.150 (3.81)
MIN.
.400 (10.16)
.320 (8.13)
.020 (0.51)
.016 (0.41)
.110 (2.79)
.090 (2.29)
.065 (1.65)
.045 (1.14)
Dimensions: inches (mm)
DS21425B-page 14
2002 Microchip Technology Inc.
TC4467/TC4468/TC4469
16-Lead Plastic Small Outline (SO) – Wide, 300 mil (SOIC)
E
p
E1
D
2
1
n
B
h
α
45°
c
A2
A
φ
β
L
A1
Units
Dimension Limits
INCHES*
NOM
MILLIMETERS
MIN
MAX
MIN
NOM
16
MAX
n
p
A
A2
A1
E
E1
D
Number of Pins
Pitch
Overall Height
16
.050
.099
.091
.008
.407
.295
.406
.020
.033
4
1.27
.093
.104
2.36
2.24
2.50
2.31
0.20
10.34
7.49
10.30
0.50
0.84
4
2.64
Molded Package Thickness
Standoff
.088
.004
.394
.291
.398
.010
.016
0
.094
.012
.420
.299
.413
.029
.050
8
2.39
0.30
10.67
7.59
10.49
0.74
1.27
8
§
0.10
10.01
7.39
10.10
0.25
0.41
0
Overall Width
Molded Package Width
Overall Length
Chamfer Distance
Foot Length
Foot Angle
Lead Thickness
Lead Width
Mold Draft Angle Top
Mold Draft Angle Bottom
h
L
φ
c
.009
.014
0
.011
.017
12
.013
.020
15
0.23
0.36
0
0.28
0.42
12
0.33
0.51
15
B
α
β
0
12
15
0
12
15
* Controlling Parameter
§ Significant Characteristic
Notes:
Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed
.010” (0.254mm) per side.
JEDEC Equivalent: MS-013
Drawing No. C04-102
2002 Microchip Technology Inc.
DS21425B-page 15
TC4467/TC4468/TC4469
NOTES:
DS21425B-page 16
2002 Microchip Technology Inc.
TC4467/TC4468/TC4469
Systems Information and Upgrade Hot Line
ON-LINE SUPPORT
Microchip provides on-line support on the Microchip
World Wide Web (WWW) site.
The web site is used by Microchip as a means to make
files and information easily available to customers. To
view the site, the user must have access to the Internet
and a web browser, such as Netscape or Microsoft
Explorer. Files are also available for FTP download
from our FTP site.
The Systems Information and Upgrade Line provides
system users a listing of the latest versions of all of
Microchip's development systems software products.
Plus, this line provides information on how customers
can receive any currently available upgrade kits.The
Hot Line Numbers are:
1-800-755-2345 for U.S. and most of Canada, and
1-480-792-7302 for the rest of the world.
013001
ConnectingtotheMicrochipInternetWebSite
The Microchip web site is available by using your
favorite Internet browser to attach to:
www.microchip.com
The file transfer site is available by using an FTP ser-
vice to connect to:
ftp://ftp.microchip.com
The web site and file transfer site provide a variety of
services. Users may download files for the latest
Development Tools, Data Sheets, Application Notes,
User's Guides, Articles and Sample Programs. A vari-
ety of Microchip specific business information is also
available, including listings of Microchip sales offices,
distributors and factory representatives. Other data
available for consideration is:
• Latest Microchip Press Releases
• Technical Support Section with Frequently Asked
Questions
• Design Tips
• Device Errata
• Job Postings
• Microchip Consultant Program Member Listing
• Links to other useful web sites related to
Microchip Products
• Conferences for products, Development Systems,
technical information and more
• Listing of seminars and events
2002 Microchip Technology Inc.
DS21425B-page17
TC4467/TC4468/TC4469
READER RESPONSE
It is our intention to provide you with the best documentation possible to ensure successful use of your Microchip prod-
uct. If you wish to provide your comments on organization, clarity, subject matter, and ways in which our documentation
can better serve you, please FAX your comments to the Technical Publications Manager at (480) 792-4150.
Please list the following information, and use this outline to provide us with your comments about this Data Sheet.
To:
Technical Publications Manager
Reader Response
Total Pages Sent
RE:
From:
Name
Company
Address
City / State / ZIP / Country
Telephone: (_______) _________ - _________
FAX: (______) _________ - _________
Application (optional):
Would you like a reply?
Y
N
Literature Number:
DS21425B
Device:
TC4467/TC4468/TC4469
Questions:
1. What are the best features of this document?
2. How does this document meet your hardware and software development needs?
3. Do you find the organization of this data sheet easy to follow? If not, why?
4. What additions to the data sheet do you think would enhance the structure and subject?
5. What deletions from the data sheet could be made without affecting the overall usefulness?
6. Is there any incorrect or misleading information (what and where)?
7. How would you improve this document?
8. How would you improve our software, systems, and silicon products?
DS21425B-page18
2002 Microchip Technology Inc.
TC4467/TC4468/TC4469
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.
Examples:
PART NO.
Device
X
XX
a)
b)
c)
TC4467COE: Commerical Temperature,
Temperature Package
Range
SOIC package.
TC4467CPD: Commercial Temperature,
PDIP package.
TC4467MJD: Military Temperature,
Ceramic DIP package.
Device:
TC4467: 1.2A Quad MOSFET Driver, NAND
TC4468: 1.2A Quad MOSFET Driver, AND
TC4469: 1.2A Quad MOSFET Driver, AND/INV
a)
b)
TC4468COE713: Tape and Reel,
Commerical Temp., SOIC package.
TC4468CPD: Commercial Temperature,
PDIP package.
Temperature Range:
Package:
C
E
=
=
=
0°C to +70°C
-40°C to +85°C (CERDIP only)
-55°C to +125°C (CERDIP only)
a)
b)
TC4469COE: Commercial Temperature,
SOIC package.
TC4469CPD: Commercial Temperature,
PDIP package.
M
PD
JD
=
=
=
Plastic DIP, (300 mil body), 14-lead
Ceramic DIP, (300 mil body), 14-lead
SOIC (Wide), 16-lead
OE
OE713 = SOIC (Wide), 16-lead (Tape and Reel)
Sales and Support
Data Sheets
Products supported by a preliminary Data Sheet may have an errata sheet describing minor operational differences and recom-
mended workarounds. To determine if an errata sheet exists for a particular device, please contact one of the following:
1. Your local Microchip sales office
2. The Microchip Corporate Literature Center U.S. FAX: (480) 792-7277
3. The Microchip Worldwide Site (www.microchip.com)
Please specify which device, revision of silicon and Data Sheet (include Literature #) you are using.
New Customer Notification System
Register on our web site (www.microchip.com/cn) to receive the most current information on our products.
2002 Microchip Technology Inc.
DS21425B-page19
TC4467/TC4468/TC4469
NOTES:
DS21425B-page 20
2002 Microchip Technology Inc.
TC4467/TC4468/TC4469
Information contained in this publication regarding device
applications and the like is intended through suggestion only
and may be superseded by updates. It is your responsibility to
ensure that your application meets with your specifications.
No representation or warranty is given and no liability is
assumed by Microchip Technology Incorporated with respect
to the accuracy or use of such information, or infringement of
patents or other intellectual property rights arising from such
use or otherwise. Use of Microchip’s products as critical com-
ponents in life support systems is not authorized except with
express written approval by Microchip. No licenses are con-
veyed, implicitly or otherwise, under any intellectual property
rights.
Trademarks
The Microchip name and logo, the Microchip logo, FilterLab,
KEELOQ, microID, MPLAB, MXDEV, PIC, PICmicro,
PICMASTER, PICSTART, PRO MATE, SEEVAL and The
Embedded Control Solutions Company are registered trade-
marks of Microchip Technology Incorporated in the U.S.A. and
other countries.
dsPIC, dsPICDEM.net, ECONOMONITOR, FanSense,
FlexROM, fuzzyLAB, In-Circuit Serial Programming, ICSP,
ICEPIC, microPort, Migratable Memory, MPASM, MPLIB,
MPLINK, MPSIM, MXLAB, PICC, PICDEM, PICDEM.net,
rfPIC, Select Mode and Total Endurance are trademarks of
Microchip Technology Incorporated in the U.S.A.
Serialized Quick Turn Programming (SQTP) is a service mark
of Microchip Technology Incorporated in the U.S.A.
All other trademarks mentioned herein are property of their
respective companies.
© 2002, Microchip Technology Incorporated, Printed in the
U.S.A., All Rights Reserved.
Printed on recycled paper.
Microchip received QS-9000 quality system
certification for its worldwide headquarters,
design and wafer fabrication facilities in
Chandler and Tempe, Arizona in July 1999
and Mountain View, California in March 2002.
The Company’s quality system processes and
procedures are QS-9000 compliant for its
®
PICmicro 8-bit MCUs, KEELOQ® code hopping
devices, Serial EEPROMs, microperipherals,
non-volatile memory and analog products. In
addition, Microchip’s quality system for the
design and manufacture of development
systems is ISO 9001 certified.
2002 Microchip Technology Inc.
DS21425B-page 21
M
WORLDWIDE SALES AND SERVICE
Japan
AMERICAS
ASIA/PACIFIC
Microchip Technology Japan K.K.
Benex S-1 6F
Corporate Office
Australia
2355 West Chandler Blvd.
Microchip Technology Australia Pty Ltd
Suite 22, 41 Rawson Street
Epping 2121, NSW
3-18-20, Shinyokohama
Kohoku-Ku, Yokohama-shi
Kanagawa, 222-0033, Japan
Tel: 81-45-471- 6166 Fax: 81-45-471-6122
Chandler, AZ 85224-6199
Tel: 480-792-7200 Fax: 480-792-7277
Technical Support: 480-792-7627
Web Address: http://www.microchip.com
Australia
Tel: 61-2-9868-6733 Fax: 61-2-9868-6755
Korea
Rocky Mountain
China - Beijing
Microchip Technology Korea
168-1, Youngbo Bldg. 3 Floor
Samsung-Dong, Kangnam-Ku
Seoul, Korea 135-882
2355 West Chandler Blvd.
Chandler, AZ 85224-6199
Tel: 480-792-7966 Fax: 480-792-4338
Microchip Technology Consulting (Shanghai)
Co., Ltd., Beijing Liaison Office
Unit 915
Bei Hai Wan Tai Bldg.
Tel: 82-2-554-7200 Fax: 82-2-558-5934
Atlanta
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Tel: 86-10-85282100 Fax: 86-10-85282104
500 Sugar Mill Road, Suite 200B
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Singapore
Microchip Technology Singapore Pte Ltd.
200 Middle Road
Tel: 770-640-0034 Fax: 770-640-0307
China - Chengdu
#07-02 Prime Centre
Boston
Microchip Technology Consulting (Shanghai)
Co., Ltd., Chengdu Liaison Office
Rm. 2401, 24th Floor,
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Tel: 978-692-3848 Fax: 978-692-3821
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Taiwan
Ming Xing Financial Tower
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No. 88 TIDU Street
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Tel: 630-285-0071 Fax: 630-285-0075
China - Fuzhou
Dallas
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Co., Ltd., Fuzhou Liaison Office
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Tel: 886-2-2717-7175 Fax: 886-2-2545-0139
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Tel: 248-538-2250 Fax: 248-538-2260
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Co., Ltd.
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Tel: 45 4420 9895 Fax: 45 4420 9910
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Room 701, Bldg. B
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China - Shenzhen
Batiment A - ler Etage
Microchip Technology Consulting (Shanghai)
Co., Ltd., Shenzhen Liaison Office
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Renminnan Lu
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Germany
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Tel: 631-273-5305 Fax: 631-273-5335
Tel: 86-755-2350361 Fax: 86-755-2366086
San Jose
China - Hong Kong SAR
Microchip Technology Inc.
2107 North First Street, Suite 590
San Jose, CA 95131
Microchip Technology Hongkong Ltd.
Unit 901-6, Tower 2, Metroplaza
223 Hing Fong Road
Italy
Microchip Technology SRL
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Tel: 408-436-7950 Fax: 408-436-7955
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Tel: 852-2401-1200 Fax: 852-2401-3431
Toronto
6285 Northam Drive, Suite 108
Mississauga, Ontario L4V 1X5, Canada
Tel: 905-673-0699 Fax: 905-673-6509
India
Milan, Italy
Microchip Technology Inc.
India Liaison Office
Tel: 39-039-65791-1 Fax: 39-039-6899883
United Kingdom
Divyasree Chambers
Microchip Ltd.
1 Floor, Wing A (A3/A4)
No. 11, O’Shaugnessey Road
Bangalore, 560 025, India
Tel: 91-80-2290061 Fax: 91-80-2290062
505 Eskdale Road
Winnersh Triangle
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Tel: 44 118 921 5869 Fax: 44-118 921-5820
Austria
Microchip Technology Austria GmbH
Durisolstrasse 2
A-4600 Wels
Austria
Tel: 43-7242-2244-399
Fax: 43-7242-2244-393
05/16/02
DS21425B-page 22
2002 Microchip Technology Inc.
TC4469MJDG 相关器件
| 型号 | 制造商 | 描述 | 价格 | 文档 |
| TC4469MOE | MICROCHIP | Logic-Input CMOS Quad Drivers | 获取价格 |
|
| TC4469MOE713 | MICROCHIP | Logic-Input CMOS Quad Drivers | 获取价格 |
|
| TC4469MPD | MICROCHIP | Logic-Input CMOS Quad Drivers | 获取价格 |
|
| TC4501BP | TOSHIBA | IC 4000/14000/40000 SERIES, DUAL 4-INPUT NAND GATE, PDIP16, 0.300 INCH, PLASTIC, DIP-16, Gate | 获取价格 |
|
| TC4502BP | TOSHIBA | IC 4000/14000/40000 SERIES, 6-BIT DRIVER, INVERTED OUTPUT, PDIP16, 0.300 INCH, PLASTIC, DIP-16, Bus Driver/Transceiver | 获取价格 |
|
| TC4503BF | TOSHIBA | IC 4000/14000/40000 SERIES, 6-BIT DRIVER, TRUE OUTPUT, PDSO16, 0.300 INCH, PLASTIC, SOIC-16, Bus Driver/Transceiver | 获取价格 |
|
| TC4503BP | TOSHIBA | IC 4000/14000/40000 SERIES, 6-BIT DRIVER, TRUE OUTPUT, PDIP16, 0.300 INCH, PLASTIC, DIP-16, Bus Driver/Transceiver | 获取价格 |
|
| TC4508BP | TOSHIBA | IC 4000/14000/40000 SERIES, DUAL 4-BIT DRIVER, TRUE OUTPUT, PDIP24, 0.600 INCH, PLASTIC, DIP-24, Bus Driver/Transceiver | 获取价格 |
|
| TC4510BF | TOSHIBA | IC 4000/14000/40000 SERIES, SYN POSITIVE EDGE TRIGGERED 4-BIT BIDIRECTIONAL DECADE COUNTER, PDSO16, 0.300 INCH, PLASTIC, SOIC-16, Counter | 获取价格 |
|
| TC4510BP | TOSHIBA | IC 4000/14000/40000 SERIES, SYN POSITIVE EDGE TRIGGERED 4-BIT BIDIRECTIONAL DECADE COUNTER, PDIP16, 0.300 INCH, PLASTIC, DIP-16, Counter | 获取价格 |
|
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