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MG1058-11

更新时间：2025-07-13 12:52:29
品牌：MICROSEMI
描述：GUNN Diodes Anode Heat Sink

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中文翻译

免费 PCB/SMT

MG1058-11 概述

GUNN Diodes Anode Heat Sink 耿氏二极管阳极散热器 专用微波二极管

MG1058-11 规格参数

是否Rohs认证：符合生命周期：Active
包装说明：O-CEMW-N2Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8541.10.00.60
风险等级：5.72Is Samacsys：N
其他特性：HIGH RELIABILITY应用：CONTINUOUS WAVE
外壳连接：ANODE配置：SINGLE
二极管元件材料：GALLIUM ARSENIDE二极管类型：GUNN DIODE
JESD-30 代码：O-CEMW-N2JESD-609代码：e4
元件数量：1端子数量：2
典型工作电流：300 mA最大工作频率：25 GHz
最小工作频率：23 GHz标称工作电压：5 V
最小输出功率：0.01 W封装主体材料：CERAMIC, METAL-SEALED COFIRED
封装形状：ROUND封装形式：MICROWAVE
认证状态：Not Qualified子类别：Microwave Special Purpose Diodes
表面贴装：YES技术：GUNN
端子面层：GOLD端子形式：NO LEAD
端子位置：ENDBase Number Matches：1

MG1058-11 数据手册

通过下载MG1058-11数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。

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GUNN Diodes  
Anode Heat Sink  
®
TM  
MG1041 – MG1059  
Features  
●
High Reliability  
●
Low-Phase Noise  
●
9.5–35.5 GHz Operation  
●
Pulsed and CW Designs to 20 mW  
Applications  
●
Motion Detectors  
●
Transmitters and Receivers  
●
Beacons  
●
Automotive Collision Avoidance Radars  
Description  
●
Radars  
Microsemi’s GaAs Gunn diodes, epi-up (anode  
heatsink), are fabricated from epitaxial layers grown  
at MSC by the Vapor Phase Epitaxy technique. The  
layers are processed using proprietary techniques  
resulting in ultra- low phase and 1/f noise. The diodes  
are available in a variety of microwave ceramic  
●
Radiometers  
●
Instrumentation  
packages for operation from  
9.5–35.5 GHz.  
Microsemi  
Copyright 2008  
Rev: 2009-01-19  
Microwave Products  
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748  
Page 1  
GUNN Diodes  
Anode Heat Sink  
®
TM  
MG1041 – MG1059  
(Discrete Frequency: Anode Heatsink)  
CW Epi-Up Gunn Diodes (Specifications  
@ 25°C)  
Operating  
equency1  
(GHz)  
Min.  
Power2  
(mW)  
Typ.  
Operating  
(V)  
Max.  
oltage Operating Current  
Part  
Number  
F
r
V
Package  
Outline3  
(mA)  
140  
200  
200  
300  
300  
MG1052-11  
MG1056-11  
MG1054-11  
MG1058-11  
MG1059-11  
9.5–11.5  
9.5–11.5  
10  
20  
5
8
8
5
5
5
M11  
M11  
M11  
M11  
M11  
23.0–25.0  
23.0–25.0  
33.5–35.5  
10  
5
Pulsed Epi-Up Gunn Diodes (Specifications  
@ 25°C)  
Operating  
equency1  
(GHz)  
Min.  
Power2  
(mW)  
Typ.  
Operating  
(V)  
Max.  
oltage Operating Current  
Part  
Number  
F
r
V
Package  
Outline3  
(mA)  
110  
140  
180  
120  
150  
200  
MG1041-11  
MG1042-11  
MG1043-11  
MG1044-11  
MG1045-11  
MG1046-11  
9.5–11.5  
9.5–11.5  
9.5–11.5  
23.0–25.0  
23.0–25.0  
23.0–25.0  
10  
20  
30  
5
9
9
M11  
M11  
M11  
M11  
M11  
M11  
10  
8
10  
20  
8
8
1 Microsemi Gunn diodes are specified to operate within  
a
narrow range of a customer-designated center frequency within the operating frequency range shown.  
Additional frequencies are available; Please contact the factory  
.
2 Power is measured using a critically coupled test cavity. For pulsed diodes, pulse width  
3 Polarity: cathode is the cap and anode is the heatsink.  
= 1 µS, duty factor = 1% typ.  
T
ypical Characteristics  
1.0  
0.8  
0.6  
0.4  
0.2  
0
25  
-50°C  
20  
15  
10  
5
90°C  
0
0
1
2
3
0
1
2
Bias  
3
4
5
6
7
VBias  
Voltage (V)  
Ratio  
V
Threshold  
Power Output vs. Bias Voltage  
IBias Ratio vs. VBias Ratio  
IMPORTANT: For the most current data, consult our website: www.MICROSEMI.com  
Specifications are subject to change. Consult factory for the latest information.  
These products are supplied with a RoHS  
complaint Gold finish  
.
These devices are ESD sensitive and must be handled using ESD precautions.  
Microsemi  
Copyright 2008  
Rev: 2009-01-19  
Microwave Products  
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748  
Page 2  

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