概述
规格参数
数据手册MG1058-11 概述
GUNN Diodes Anode Heat Sink 耿氏二极管阳极散热器 专用微波二极管
MG1058-11 规格参数
| 是否Rohs认证： | 符合 | 生命周期： | Active |
| 包装说明： | O-CEMW-N2 | Reach Compliance Code： | compliant |
| ECCN代码： | EAR99 | HTS代码： | 8541.10.00.60 |
| 风险等级： | 5.72 | Is Samacsys： | N |
| 其他特性： | HIGH RELIABILITY | 应用： | CONTINUOUS WAVE |
| 外壳连接： | ANODE | 配置： | SINGLE |
| 二极管元件材料： | GALLIUM ARSENIDE | 二极管类型： | GUNN DIODE |
| JESD-30 代码： | O-CEMW-N2 | JESD-609代码： | e4 |
| 元件数量： | 1 | 端子数量： | 2 |
| 典型工作电流： | 300 mA | 最大工作频率： | 25 GHz |
| 最小工作频率： | 23 GHz | 标称工作电压： | 5 V |
| 最小输出功率： | 0.01 W | 封装主体材料： | CERAMIC, METAL-SEALED COFIRED |
| 封装形状： | ROUND | 封装形式： | MICROWAVE |
| 认证状态： | Not Qualified | 子类别： | Microwave Special Purpose Diodes |
| 表面贴装： | YES | 技术： | GUNN |
| 端子面层： | GOLD | 端子形式： | NO LEAD |
| 端子位置： | END | Base Number Matches： | 1 |
MG1058-11 数据手册
通过下载MG1058-11数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。
PDF下载GUNN Diodes
Anode Heat Sink
®
TM
MG1041 – MG1059
Features
●
High Reliability
●
Low-Phase Noise
●
9.5–35.5 GHz Operation
●
Pulsed and CW Designs to 20 mW
Applications
●
Motion Detectors
●
Transmitters and Receivers
●
Beacons
●
Automotive Collision Avoidance Radars
Description
●
Radars
Microsemi’s GaAs Gunn diodes, epi-up (anode
heatsink), are fabricated from epitaxial layers grown
at MSC by the Vapor Phase Epitaxy technique. The
layers are processed using proprietary techniques
resulting in ultra- low phase and 1/f noise. The diodes
are available in a variety of microwave ceramic
●
Radiometers
●
Instrumentation
packages for operation from
9.5–35.5 GHz.
Microsemi
Copyright 2008
Rev: 2009-01-19
Microwave Products
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748
Page 1
GUNN Diodes
Anode Heat Sink
®
TM
MG1041 – MG1059
(Discrete Frequency: Anode Heatsink)
CW Epi-Up Gunn Diodes (Specifications
@ 25°C)
Operating
equency1
(GHz)
Min.
Power2
(mW)
Typ.
Operating
(V)
Max.
oltage Operating Current
Part
Number
F
r
V
Package
Outline3
(mA)
140
200
200
300
300
MG1052-11
MG1056-11
MG1054-11
MG1058-11
MG1059-11
9.5–11.5
9.5–11.5
10
20
5
8
8
5
5
5
M11
M11
M11
M11
M11
23.0–25.0
23.0–25.0
33.5–35.5
10
5
Pulsed Epi-Up Gunn Diodes (Specifications
@ 25°C)
Operating
equency1
(GHz)
Min.
Power2
(mW)
Typ.
Operating
(V)
Max.
oltage Operating Current
Part
Number
F
r
V
Package
Outline3
(mA)
110
140
180
120
150
200
MG1041-11
MG1042-11
MG1043-11
MG1044-11
MG1045-11
MG1046-11
9.5–11.5
9.5–11.5
9.5–11.5
23.0–25.0
23.0–25.0
23.0–25.0
10
20
30
5
9
9
M11
M11
M11
M11
M11
M11
10
8
10
20
8
8
1 Microsemi Gunn diodes are specified to operate within
a
narrow range of a customer-designated center frequency within the operating frequency range shown.
Additional frequencies are available; Please contact the factory
.
2 Power is measured using a critically coupled test cavity. For pulsed diodes, pulse width
3 Polarity: cathode is the cap and anode is the heatsink.
= 1 µS, duty factor = 1% typ.
T
ypical Characteristics
1.0
0.8
0.6
0.4
0.2
0
25
-50°C
20
15
10
5
90°C
0
0
1
2
3
0
1
2
Bias
3
4
5
6
7
VBias
Voltage (V)
Ratio
V
Threshold
Power Output vs. Bias Voltage
IBias Ratio vs. VBias Ratio
IMPORTANT: For the most current data, consult our website: www.MICROSEMI.com
Specifications are subject to change. Consult factory for the latest information.
These products are supplied with a RoHS
complaint Gold finish
.
These devices are ESD sensitive and must be handled using ESD precautions.
Microsemi
Copyright 2008
Rev: 2009-01-19
Microwave Products
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748
Page 2
MG1058-11 相关器件
| 型号 | 制造商 | 描述 | 价格 | 文档 |
| MG1059-11 | MICROSEMI | GUNN Diodes Anode Heat Sink | 获取价格 |
|
| MG1060-15 | MICROSEMI | GUNN Diodes Cathode Heat Sink | 获取价格 |
|
| MG1070 | TEMIC | OT PLD, CMOS, | 获取价格 |
|
| MG1070E | TEMIC | Logic Circuit, | 获取价格 |
|
| MG1090 | TEMIC | OT PLD, CMOS, | 获取价格 |
|
| MG1090E | TEMIC | Logic Circuit, | 获取价格 |
|
| MG10G6EL1 | TOSHIBA | TRANSISTOR 10 A, 400 V, 6 CHANNEL, NPN, Si, POWER TRANSISTOR, 2-64A1A, 15 PIN, BIP General Purpose Power | 获取价格 |
|
| MG10G6EM1 | TOSHIBA | TRANSISTOR,MOSFET,ARRAY,N-CHANNEL,450V V(BR)DSS,10A I(D),M:HL076HD5.4 | 获取价格 |
|
| MG10H4GM1 | TOSHIBA | TRANSISTOR 10 A, 500 V, 0.5 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, 2-48A1B, 11 PIN, FET General Purpose Power | 获取价格 |
|
| MG10P12E1 | YANGJIE | E1 | 获取价格 |
|
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