首页 > WMS256K16-35DLI

WMS256K16-35DLI

更新时间：2025-07-09 18:53:17
品牌：MICROSEMI
描述：Standard SRAM, 256KX16, 35ns, CMOS, CDSO44, CERAMIC, SOJ-44

PDF下载

中文翻译

免费 PCB/SMT

WMS256K16-35DLI 概述

Standard SRAM, 256KX16, 35ns, CMOS, CDSO44, CERAMIC, SOJ-44 SRAM

WMS256K16-35DLI 规格参数

是否无铅： 含铅是否Rohs认证： 不符合
生命周期：Transferred零件包装代码：SOJ
包装说明：CERAMIC, SOJ-44针数：44
Reach Compliance Code：unknownECCN代码：3A991.B.2.A
HTS代码：8542.32.00.41风险等级：5.4
Is Samacsys：N最长访问时间：35 ns
其他特性：BATTERY BACKUPJESD-30 代码：R-CDSO-J44
JESD-609代码：e4长度：28.7 mm
内存密度：4194304 bit内存集成电路类型：STANDARD SRAM
内存宽度：16功能数量：1
端子数量：44字数：262144 words
字数代码：256000工作模式：ASYNCHRONOUS
最高工作温度：85 °C最低工作温度：-40 °C
组织：256KX16封装主体材料：CERAMIC, METAL-SEALED COFIRED
封装代码：SOJ封装形状：RECTANGULAR
封装形式：SMALL OUTLINE并行/串行：PARALLEL
峰值回流温度（摄氏度）：NOT SPECIFIED认证状态：Not Qualified
座面最大高度：3.96 mm最大供电电压 (Vsup)：5.5 V
最小供电电压 (Vsup)：4.5 V标称供电电压 (Vsup)：5 V
表面贴装：YES技术：CMOS
温度等级：INDUSTRIAL端子面层：GOLD
端子形式：J BEND端子节距：1.27 mm
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
Base Number Matches：1

WMS256K16-35DLI 数据手册

通过下载WMS256K16-35DLI数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。

PDF下载
WMS256K16-XXX  
256Kx16 MONOLITHIC SRAM, SMD 5962-96902  
PIN CONFIGURATION FOR WMS256K16-XXX  
FEATURES  
 Access Times 17, 20, 25, 35ns  
 MIL-STD-883 Compliant Devices Available  
 Packaging  
44 CSOJ  
44 FlatpacK  
TOP VIEW  
• 44 pin Ceramic SOJ (Package 102)  
• 44 lead Ceramic Flatpack (Package 225)  
 Organized as 256Kx16  
 Data Byte Control:  
44  
43  
42  
41  
40  
39  
38  
37  
36  
35  
34  
33  
32  
31  
30  
29  
28  
27  
26  
25  
24  
23  
1
2
3
4
5
6
7
8
A0  
A1  
A2  
A3  
A4  
CS#  
I/O1  
I/O2  
I/O3  
I/O4  
A17  
A16  
A15  
OE#  
UB#  
LB#  
I/O16  
I/O15  
I/O14  
I/O13  
GND  
• Lower Byte (LB#) = I/O1-8  
• Upper Byte (UB#) = I/O9-16  
 2V Minimum Data Retention for battery back up operation  
(WMS256K16L-XXX Low Power Version Only)  
9
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
 Commercial, Industrial and Military Temperature Range  
 5V Power Supply  
VCC  
GND  
I/O5  
I/O6  
I/O7  
I/O8  
WE#  
A5  
A6  
A7  
A8  
A9  
VCC  
I/O12  
I/O11  
I/O10  
I/O9  
NC  
A14  
A13  
A12  
A11  
 Low Power CMOS  
 TTL Compatible Inputs and Outputs  
A10  
PIN DESCRIPTION  
A0-17  
LB#  
Address Inputs  
Lower-Byte Control (I/O1-8  
Upper-Byte Control (I/O9-16  
Data Input/Output  
Chip Select  
)
UB#  
I/O1-16  
CS#  
OE#  
WE#  
VCC  
)
Output Enable  
Write Enable  
+5.0V Power  
GND  
NC  
Ground  
No Connection  
Microsemi Corporation reserves the right to change products or specifications without notice.  
May 2013 © 2013 Microsemi Corporation. All rights reserved.  
Rev. 8  
1
Microsemi Corporation • (602) 437-1520 • www.microsemi.com  
WMS256K16-XXX  
TRUTH TABLE  
Data I/O  
Power  
CS#  
WE#  
OE#  
LB#  
UB#  
Mode  
I/O1-8  
I/O9-16  
H
L
L
X
H
X
X
H
X
X
X
H
L
X
X
H
H
L
Not Select  
High Z  
High Z  
Standby  
Active  
Output Disable  
High Z  
High Z  
Data Out  
High Z  
High Z  
Data Out  
Data Out  
High Z  
L
L
H
L
L
H
L
Read  
Write  
Active  
Active  
L
Data Out  
Data In  
High Z  
L
H
L
X
H
L
Data In  
Data In  
L
Data In  
ABSOLUTE MAXIMUM RATINGS  
RECOMMENDED OPERATING CONDITIONS  
Parameter  
Symbol  
TA  
Min  
-55  
-65  
-0.5  
Max  
+125  
+150  
VCC+0.5  
150  
Unit  
Parameter  
Symbol  
VCC  
VIH  
Min  
4.5  
Max  
5.5  
Unit  
V
Operating Temperature  
Storage Temperature  
Signal Voltage Relative to GND  
Junction Temperature  
Supply Voltage  
°C  
°C  
V
Supply Voltage  
TSTG  
VG  
Input High Voltage  
Input Low Voltage  
Operating Temp. (Mil.)  
2.2  
VCC + 0.3  
+0.8  
V
VIL  
-0.3  
-55  
V
TJ  
°C  
V
TA  
+125  
°C  
VCC  
-0.5  
7.0  
CAPACITANCE  
TA = +25°C  
Parameter  
Symbol  
Condition  
Max  
20  
Unit  
pF  
Input capacitance  
Output capacitance  
CIN  
VIN = 0V, f = 1.0MHz  
VOUT = 0V, f = 1.0MHz  
COUT  
20  
pF  
This parameter is guaranteed by design but not tested.  
DC CHARACTERISTICS  
VCC = 5.0V, GND = 0V, -55°C ≤ TA ≤ +125°C  
Parameter  
Symbol  
Conditions  
Min  
Max  
10  
Units  
Input Leakage Current  
Output Leakage Current  
Operating Supply Current  
Standby Current  
ILI  
ILO  
VCC = 5.5, VIN = GND to VCC  
μA  
μA  
mA  
mA  
V
CS# = VIH, OE# = VIH, VOUT = GND to VCC  
CS# = VIL, OE# = VIH, f = 5MHz, VCC = 5.5  
CS# = VIH, OE# = VIH, f = 5MHz, VCC = 5.5  
IOL = 6mA, VCC = 4.5  
10  
ICC  
ISB  
275  
17  
Output Low Voltage  
Output High Voltage  
VOL  
VOH  
0.4  
IOH = -4.0mA, VCC = 4.5  
2.4  
V
NOTE: DC test conditions: VIH = VCC -0.3V, VIL = 0.3V  
LOW POWER DATA RETENTION CHARACTERISTICS (WMS256K16L-XXX ONLY)  
-55°C ≤ TA ≤ +125°C  
Parameter  
Symbol  
Conditions  
CS# ≥ VCC -0.2V  
VCC = 3V  
Min  
Typ  
Max  
5.5  
8.0  
Units  
V
Data Retention Supply Voltage  
Data Retention Current  
VDR  
2.0  
1
1.0  
mA  
ICCDR  
Microsemi Corporation reserves the right to change products or specifications without notice.  
May 2013 © 2013 Microsemi Corporation. All rights reserved.  
Rev. 8  
2
Microsemi Corporation • (602) 437-1520 • www.microsemi.com  
WMS256K16-XXX  
AC CHARACTERISTICS  
VCC = 5.0V, GND = 0V, -55°C ≤ TA ≤ +125°C  
Parameter  
-17  
-20  
-25  
-35  
Symbol  
Units  
Min  
Max  
Min  
Max  
Min  
Max  
Min  
Max  
Read Cycle  
Read Cycle Time  
Address Access Time  
Output Hold from Address Change  
Chip Select Access Time  
Output Enable to Output Valid  
Chip Select to Output in Low Z  
Output Enable to Output in Low Z  
Chip Disable to Output in High Z  
Output Disable to Output in High Z  
LB#, UB# Access Time  
LB#, UB# Enable to Low Z Output  
LB#, UB# Disable to High Z Output  
1. This parameter is guaranteed by design but not tested.  
tRC  
tAA  
17  
20  
25  
35  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
17  
20  
25  
35  
tOH  
tACS  
tOE  
0
0
0
0
17  
10  
20  
12  
25  
15  
35  
20  
1
tCLZ  
2
0
5
0
5
0
5
0
1
tOLZ  
tCHZ  
tOHZ  
1
9
9
10  
10  
10  
12  
12  
12  
14  
15  
15  
17  
1
tBA  
tBLZ  
1
0
0
0
0
1
tBHZ  
9
10  
12  
15  
AC CHARACTERISTICS  
VCC = 5.0V, GND = 0V, -55°C ≤ TA ≤ +125°C  
Parameter  
-17  
-20  
-25  
-35  
Symbol  
Units  
Min  
17  
14  
14  
10  
14  
0
Max  
Min  
20  
17  
17  
12  
17  
0
Max  
Min  
25  
20  
20  
15  
20  
0
Max  
Min  
35  
25  
25  
20  
25  
0
Max  
Write Cycle  
Write Cycle Time  
Chip Select to End of Write  
Address Valid to End of Write  
Data Valid to End of Write  
Write Pulse Width  
tWC  
tCW  
tAW  
tDW  
tWP  
tAS  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
Address Setup Time  
Address Hold Time  
tAH  
2
0
2
0
2
0
2
0
1
Output Active from End of Write  
Write Enable to Output in High Z  
Data Hold Time  
LB#, UB# Valid to End of Write  
1. This parameter is guaranteed by design but not tested.  
tOW  
1
tWHZ  
9
10  
10  
15  
tDH  
tBW  
0
14  
0
17  
0
20  
0
25  
AC TEST CIRCUIT  
AC TEST CONDITIONS  
Parameter  
Typ  
Unit  
V
Input Pulse Levels  
V
IL = 0, VIH = 3.0  
Input Rise and Fall  
5
ns  
V
IOL  
Input and Output Reference Level  
Output Timing Reference Level  
1.5  
1.5  
Current Source  
V
NOTES:  
Vz is programmable from -2V to +7V.  
IOL & IOH programmable from 0 to 16mA.  
Tester Impedance Z0 = 75 Ω.  
VZ » 1.5V  
(Bipolar Supply)  
D.U.T.  
Ceff = 50 pf  
Vz is typically the midpoint of VOH and VOL  
OL & IOH are adjusted to simulate a typical resistive load circuit.  
ATE tester includes jig capacitance.  
.
I
IOH  
Current Source  
Microsemi Corporation reserves the right to change products or specifications without notice.  
May 2013 © 2013 Microsemi Corporation. All rights reserved.  
Rev. 8  
3
Microsemi Corporation • (602) 437-1520 • www.microsemi.com  
WMS256K16-XXX  
TIMING WAVEFORM – READ CYCLE  
tRC  
ADDRESS  
CS#  
tAA  
tRC  
tCHZ  
ADDRESS  
DATA I/O  
tACS  
tAA  
LB#, UB#  
tBHZ  
tBA  
tOH  
tBLZ  
tCLZ  
PREVIOUS DATA VALID  
DATA VALID  
OE#  
READ CYCLE 1 (CS# = OE# = VIL, UB# or LB# = VIL, WE# = VIH  
)
tOE  
tOLZ  
tOHZ  
DATA I/O  
DATA VALID  
HIGH IMPEDANCE  
READ CYCLE 2 (WE# = VIH  
)
WRITE CYCLE – WE# CONTROLLED  
tWC  
ADDRESS  
tAW  
tAH  
tCW  
CS#  
tBW  
LB#, UB#  
WE#  
tAS  
tWP  
tOW  
tDH  
tWHZ  
tDW  
DATA I/O  
DATA VALID  
WRITE CYCLE 1, WE# CONTROLLED  
WRITE CYCLE – CS# CONTROLLED  
WRITE CYCLE – LB#, UB# CONTROLLED  
tWC  
tWC  
ADDRESS  
ADDRESS  
tAW  
tAW  
tAH  
tAH  
tAS  
tAS  
tCW  
tCW  
CS#  
LB#, UB#  
WE#  
CS#  
LB#, UB#  
WE#  
tBW  
tBW  
tWP  
tWP  
tDW  
tDH  
tDW  
tDH  
DATA I/O  
DATA VALID  
DATA I/O  
DATA VALID  
WRITE CYCLE 2, CS# CONTROLLED  
WRITE CYCLE 3, LB#, UB# CONTROLLED  
Microsemi Corporation reserves the right to change products or specifications without notice.  
May 2013 © 2013 Microsemi Corporation. All rights reserved.  
Rev. 8  
4
Microsemi Corporation • (602) 437-1520 • www.microsemi.com  
WMS256K16-XXX  
PACKAGE 102: 44 LEAD, CERAMIC SOJ  
28.70 (1.13) 0.25 (0.010)  
3.96 (0.156) MAX  
0.89 (0.035)  
Radius TYP  
0.2 (0.008)  
0.05 (0.002)  
11.3 (0.446)  
0.2 (0.009)  
9.55 (0.376) 0.25 (0.010)  
1.27 (0.050) 0.25 (0.010)  
1.27 (0.050) TYP  
26.7 (1.050) TYP  
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES  
PACKAGE 225: 44 LEAD, CERAMIC FLAT PACK  
28.45 (1.120)  
0.26 (0.010)  
2.60 (0.102)  
MAX  
12.95 (0.510)  
0.13 (0.005)  
10.16 (0.400)  
0.51 (0.020)  
0.43 (0.017)  
0.05 (0.002)  
1.27 (0.050) TYP  
0.14 (0.006)  
0.05 (0.002)  
26.67 (1.050) TYP  
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES  
Microsemi Corporation reserves the right to change products or specifications without notice.  
May 2013 © 2013 Microsemi Corporation. All rights reserved.  
Rev. 8  
5
Microsemi Corporation • (602) 437-1520 • www.microsemi.com  
WMS256K16-XXX  
ORDERING INFORMATION  
W M S 256K16 X - XXX X X X  
MICROSEMI CORPORATION  
MONOLITHIC  
SRAM  
ORGANIZATION, 256K x 16  
IMPROVEMENT MARK:  
Blank = Standard Power  
L = Low Power Data Retention  
ACCESS TIME (ns)  
PACKAGE:  
DL = 44 Lead Ceramic SOJ (Package 102)  
FL = 44 Lead Ceramic Flatpack (Package 225)  
DEVICE GRADE:  
M = Military Screened -55°C to +125°C  
I = Industrial  
-40°C to +85°C  
0°C to +70°C  
C = Commercial  
LEAD FINISH:  
Blank = Gold plated leads  
A = Solder dip leads  
Microsemi Corporation reserves the right to change products or specifications without notice.  
May 2013 © 2013 Microsemi Corporation. All rights reserved.  
Rev. 8  
6
Microsemi Corporation • (602) 437-1520 • www.microsemi.com  
WMS256K16-XXX  
DEVICE TYPE  
SPEED  
35ns  
PACKAGE  
44 lead SOJ (DL)  
44 lead SOJ (DL)  
44 lead SOJ (DL)  
44 lead SOJ (DL)  
SMD NO  
256K x 16 SRAM Monolithic  
256K x 16 SRAM Monolithic  
256K x 16 SRAM Monolithic  
256K x 16 SRAM Monolithic  
5962-96902 01HMX  
5962-96902 02HMX  
5962-96902 03HMX  
5962-96902 04HMX  
25ns  
20ns  
17ns  
256K x 16 SRAM Monolithic  
256K x 16 SRAM Monolithic  
256K x 16 SRAM Monolithic  
256K x 16 SRAM Monolithic  
35ns  
25ns  
20ns  
17ns  
44 lead Flatpack (FL)  
44 lead Flatpack (FL)  
44 lead Flatpack (FL)  
44 lead Flatpack (FL)  
5962-96902 01HNX  
5962-96902 02HNX  
5962-96902 03HNX  
5962-96902 04HNX  
Microsemi Corporation reserves the right to change products or specifications without notice.  
May 2013 © 2013 Microsemi Corporation. All rights reserved.  
Rev. 8  
7
Microsemi Corporation • (602) 437-1520 • www.microsemi.com  
WMS256K16-XXX  
Document Title  
256Kx16 MONOLITHIC SRAM, SMD 5962-96902  
Revision History  
Rev # History  
Release Date  
Status  
Rev 7  
Changes (Pg. 1-9)  
February 2011  
Final  
7.1 Change document layout from White Electronic Designs to Microsemi  
7.2 Added document 'Revision History' page  
Rev 8  
Changes (Pg. 1-8)  
May 2013  
Final  
8.1 Remove all references to the "FG" package  
Microsemi Corporation reserves the right to change products or specifications without notice.  
May 2013 © 2013 Microsemi Corporation. All rights reserved.  
Rev. 8  
8
Microsemi Corporation • (602) 437-1520 • www.microsemi.com  

WMS256K16-35DLI 相关器件

型号 制造商 描述 价格 文档
WMS256K16-35DLIA WEDC 256Kx16 MONOLITHIC SRAM, SMD 5962-96902 获取价格
WMS256K16-35DLIA MICROSEMI Standard SRAM, 256KX16, 35ns, CMOS, CDSO44, CERAMIC, SOJ-44 获取价格
WMS256K16-35DLM WEDC 256Kx16 MONOLITHIC SRAM, SMD 5962-96902 获取价格
WMS256K16-35DLM MICROSEMI Standard SRAM, 256KX16, 35ns, CMOS, CDSO44, CERAMIC, SOJ-44 获取价格
WMS256K16-35DLMA WEDC 256Kx16 MONOLITHIC SRAM, SMD 5962-96902 获取价格
WMS256K16-35DLMA MICROSEMI Standard SRAM, 256KX16, 35ns, CMOS, CDSO44, CERAMIC, SOJ-44 获取价格
WMS256K16-35FGC WEDC 256Kx16 MONOLITHIC SRAM, SMD 5962-96902 获取价格
WMS256K16-35FGCA WEDC 256Kx16 MONOLITHIC SRAM, SMD 5962-96902 获取价格
WMS256K16-35FGI WEDC 256Kx16 MONOLITHIC SRAM, SMD 5962-96902 获取价格
WMS256K16-35FGIA WEDC 256Kx16 MONOLITHIC SRAM, SMD 5962-96902 获取价格

WMS256K16-35DLI 相关文章

  • 小米 AI 眼镜技术亮点：双芯架构助力智能穿戴跨越发展
    2025-07-11
    20
  • AI 芯片风云：台积电能否超越英伟达成新霸主？
    2025-07-11
    19
  • 锁存型霍尔 IC：原理、应用大揭秘
    2025-07-11
    18
  • HBM 角逐：定制化、混合键合等技术成竞争关键
    2025-07-11
    15

    • 热门型号

  • 1N5930
  • 1N5942B
  • 1N4001
  • MBR3050CT
  • RTA02-8D
  • 4116T
  • 5KP43A/4
  • 1N5260A
  • MC79L05
  • BZX85C30
  • 9510-G
  • W2PE-54WZ-P
  • 1N6063
  • 2SA673
  • 20IMX35
    • Hi,有什么可以帮您？ 在线客服 或 微信扫码咨询
  • 概述
  • 规格参数
  • 数据手册
    • 2025 ICPDF网 联系我们和版权申明:QQ 272164286