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PD618BA

更新时间：2025-07-13 10:11:56

品牌：NIKOSEM

描述：TO-252

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概述
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PD618BA 概述

TO-252

PD618BA 数据手册

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PD618BA

N-Channel Enhancement Mode

Field Effect Transistor

NIKO-SEM

TO-252

Halogen-Free & Lead-Free

PRODUCT SUMMARY

V_(BR)DSS

30V

R_DS(ON)

I_D

1. GATE

2. DRAIN

3. SOURCE

74A

5.5mΩ

ABSOLUTE MAXIMUM RATINGS (T_A= 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

Drain-Source Voltage

SYMBOL

V_DS

LIMITS

UNITS

±20

Gate-Source Voltage

V_GS

T_C= 25 °C

Continuous Drain Current²

I_D

T_C= 100 °C

Pulsed Drain Current¹

Avalanche Current

Avalanche Energy

I_DM

I_AS

150

L = 0.1mH

T_C= 25 °C

T_C= 100 °C

E_AS

P_D

Power Dissipation

Junction & Storage Temperature Range

T_J, T_stg

-55 to 150

°C

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

SYMBOL

R_JC

TYPICAL

MAXIMUM

UNITS

°C / W

Junction-to-Case

2.3

Junction-to-Ambient

62.5

R_JA

¹Pulse width limited by maximum junction temperature.

²Package limitation current is 40A

ELECTRICAL CHARACTERISTICS (T_J= 25 °C, Unless Otherwise Noted)

LIMITS

MIN TYP MAX

PARAMETER

SYMBOL

TEST CONDITIONS

STATIC

UNIT

Drain-Source Breakdown Voltage

Gate Threshold Voltage

Gate-Body Leakage

V_(BR)DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= 250A

V_DS= V_GS, I_D= 250A

V_DS= 0V, V_GS= ±20V

V_DS= 24V, V_GS= 0V

1.3 1.7

2.3

±100 nA

Zero Gate Voltage Drain Current

I_DSS

A

V_DS= 20V, V_GS= 0V, T_J= 125 °C

V_GS= 4.5V, I_D= 15A

4.3

3.3

Drain-Source On-State

Resistance₁

R_DS(ON)

mΩ

V_GS= 10V , I_D= 20A

5.5

D-37-2

REV 1.0

PD618BA

N-Channel Enhancement Mode

Field Effect Transistor

NIKO-SEM

TO-252

Halogen-Free & Lead-Free

Forward Transconductance¹

g_fs

V_DS= 5V, I_D= 20A

DYNAMIC

Input Capacitance

C_iss

1435

259

162

1.3

28.3

15.4

3.5

7.7

Output Capacitance

Reverse Transfer Capacitance

Gate Resistance

C_oss

V_GS= 0V, V_DS= 15V, f = 1MHz

V_GS= 0V, V_DS= 0V, f = 1MHz

C_rss

R_g

Q_g(VGS=10V)

Total Gate Charge²

Q_g(VGS=4.5V)

V_DS= 15V , I_D= 20A

Gate-Source Charge²

Gate-Drain Charge²

Turn-On Delay Time²

Rise Time²

Q_gs

Q_gd

t_d(on)

t_r

V_DS= 15V

Turn-Off Delay Time²

Fall Time²

t_d(off)

t_f

I_D 20A, V_GS= 10V, R_GEN=6Ω

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (T_J= 25 °C)

Continuous Current³

Forward Voltage¹

I_S

V_SD

t_rr

I_F= 20A, V_GS= 0V

1.2

Reverse Recovery Time

Reverse Recovery Charge

I_F= 20A, dl_F/dt = 100A / S

Q_rr

¹Pulse test : Pulse Width  300 sec, Duty Cycle  2％.

²Independent of operating temperature.

³Package limitation current is 40A

D-37-2

REV 1.0

PD618BA

N-Channel Enhancement Mode

Field Effect Transistor

NIKO-SEM

TO-252

Halogen-Free & Lead-Free

Output Characteristics

Transfer Characteristics

VGS=10V

VGS=9V

VGS=8V

VGS=7V

VGS=6V

VGS=5V

VGS=4.5V

VGS=3V

25℃

-20℃

125℃

VGS=2.5V

VDS, Drain-To-Source Voltage(V)

VGS, Gate-To-Source Voltage(V)

On-Resistance VS Temperature

Capacitance Characteristic

1600

1400

1200

1000

800

600

400

200

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

CISS

VGS=10V

ID=20A

COSS

CRSS

-50

-25

100

125

150

TJ , Junction Temperature(˚C)

VDS, Drain-To-Source Voltage(V)

Gate charge Characteristics

Source-Drain Diode Forward Voltage

100

VDS=15V

ID=20A

150℃

25℃

0.1

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

Qg , Total Gate Charge(nC)

VSD, Source-To-Drain Voltage(V)

D-37-2

REV 1.0

PD618BA

N-Channel Enhancement Mode

Field Effect Transistor

NIKO-SEM

TO-252

Halogen-Free & Lead-Free

Safe Operating Area

Single Pulse Maximum Power Dissipation

1000

100

300

Operation in This Area is

Limited by RDS(ON)

Single Pulse

RθJC = 2.3 ˚C/W

TC=25˚C

240

180

120

1ms

NOTE :

1.VGS= 10V

2.TC=25˚C

3.RθJC = 2.3 ˚C/W

4.Single Pulse

10ms

100ms

0.1

100

0.001

0.01

0.1

100

VDS, Drain-To-Source Voltage(V)

Single Pulse Time(s)

Transient Thermal Response Curve

Duty cycle=0.5

0.2

0.1

0.05

0.02

0.01

Notes

0.1

0.01

1.Duty cycle, D= t1 / t2

2.RthJC = 2.3 ℃/W

3.TJ-TC = P*RthJC(t)

4.RthJC(t) = r(t)*RthJC

single pulse

0.0001

0.001

0.01

0.1

100

T1 , Square Wave Pulse Duration[sec]

D-37-2

REV 1.0

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