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BF512-T

更新时间：2025-05-13 18:58:05

品牌：NXP

描述：TRANSISTOR VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, FET RF Small Signal

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免费 PCB/SMT

概述
规格参数
数据手册

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BF512-T 概述

TRANSISTOR VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, FET RF Small Signal 射频小信号场效应晶体管

BF512-T 规格参数

生命周期：	Obsolete	包装说明：	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8541.21.00.95	风险等级：	5.76
其他特性：	LOW NOISE	配置：	SINGLE
最小漏源击穿电压：	20 V	最大漏极电流 (ID)：	0.03 A
FET 技术：	JUNCTION	最大反馈电容 (Crss)：	0.4 pF
最高频带：	VERY HIGH FREQUENCY BAND	JESD-30 代码：	R-PDSO-G3
元件数量：	1	端子数量：	3
工作模式：	DEPLETION MODE	最高工作温度：	150 °C
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	极性/信道类型：	N-CHANNEL
认证状态：	Not Qualified	表面贴装：	YES
端子形式：	GULL WING	端子位置：	DUAL
晶体管应用：	AMPLIFIER	晶体管元件材料：	SILICON
Base Number Matches：	1

BF512-T 数据手册

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DISCRETE SEMICONDUCTORS

DATA SHEET

BF510 to 513

N-channel silicon field-effect

transistors

December 1997

Product speciﬁcation

File under Discrete Semiconductors, SC07

Philips Semiconductors

Product speciﬁcation

N-channel silicon ﬁeld-effect transistors

BF510 to 513

DESCRIPTION

MARKING CODE

Asymmetrical N-channel planar

epitaxial junction field-effect

BF510 = S6p

BF511 = S7p

BF512 = S8p

BF513 = S9p

transistors in the miniature plastic

envelope intended for applications up

to the v.h.f. range in hybrid thick and

thin-film circuits. Special features are

the low feedback capacitance and the

low noise figure. These features

make the product very suitable for

applications such as the r.f. stages in

f.m. portables (BF510), car radios

(BF511) and mains radios (BF512) or

the mixer stage (BF513).

handbook, halfpage

PINNING - SOT23

= gate

Top view

MAM385

= drain

= source

Fig.1 Simplified outline and symbol.

QUICK REFERENCE DATA

Drain-source voltage

V_DS

I_D

max.

Drain current (DC or average)

Total power dissipation

up to T_amb= 40 °C

P_tot

I_DSS

y_fs

max.

250

BF510

0.7

511

512

513

Drain current

2.5

7.0

10 mA

18 mA

V_DS= 10 V; V_GS= 0

3.0

Transfer admittance (common source)

V_DS= 10 V; V_GS= 0; f = 1 kHz

2.5

7 mS

Feedback capacitance

_DS= 10 V; V_GS= 0

C_rs

typ.

0.3

−

− pF

V_DS= 10 V; I_D= 5 mA

−

0.3

0.3 pF

Noise ﬁgure at optimum source admittance

G_S= 1 mS; −B_S= 3 mS; f = 100 MHz

V_DS= 10 V; V_GS= 0

typ.

1.5

−

− dB

_DS= 10 V; I_D= 5 mA

−

1.5

1.5 dB

December 1997

Philips Semiconductors

Product speciﬁcation

N-channel silicon ﬁeld-effect transistors

BF510 to 513

RATINGS

Limiting values in accordance with the Absolute Maximum System (IEC 134)

Drain-source voltage

V_DS

V_DGO

I_D

max.

20 V

Drain-gate voltage (open source)

Drain current (DC or average)

Gate current

max.

30 mA

10 mA

250 mW

± I_G

P_tot

T_stg

T_j

Total power dissipation up to T_amb= 40 °C (note 1)

Storage temperature range

Junction temperature

−65 to + 150 °C

max.

150 °C

THERMAL RESISTANCE

From junction to ambient (note 1)

R_{th j-a}

430 K/W

Note

1. Mounted on a ceramic substrate of 8 mm × 10 mm × 0.7 mm.

STATIC CHARACTERISTICS

T_amb= 25 °C

BF510

511

512

513

Gate cut-off current

−V_GS= 0.2 V; V_DS= 0

Gate-drain breakdown voltage

I_S= 0; −I_D= 10 µA

−I_GSS

10 nA

20 V

−V_(BR)GDO

Drain current

0.7

3.0

2.5

7.0

10 mA

18 mA

V_DS= 10 V; V_GS= 0

I_DSS

Gate-source cut-off voltage

I_D= 10 µA; V_DS= 10 V

−V_(P)GS

typ.

0.8

1.5

2.2

3 V

December 1997

Philips Semiconductors

Product speciﬁcation

N-channel silicon ﬁeld-effect transistors

BF510 to 513

DYNAMIC CHARACTERISTICS

Measuring conditions (common source):

V_DS= 10 V; V_GS= 0; T_amb= 25 °C for BF510 and BF511

V_DS= 10 V; I_D= 5 mA; T_amb= 25 °C for BF512 and BF513

y-parameters (common source)

Input capacitance at f = 1 MHz

Input conductance at f = 100 MHz

BF510

511

512

513

5 pF

C_is

g_is

typ.

100

0.4

0.5

2.5

−

0.4

0.5

4.0

−

50 µS

0.4 pF

0.5 pF

3.5 mS

7.0 mS

5.0 mS

3 pF

0.4

0.5

4.0

6.0

5.0

Feedback capacitance at f = 1 MHz

Transfer admittance at f = 1 kHz

C_rs

y_fs

V_GS= 0 instead of I_D= 5 mA

y_fs

Transfer admittance at f = 100 MHz

Output capacitance at f = 1 MHz

Output conductance at f = 1 MHz

Output conductance at f = 100 MHz

typ.

3.5

5.5

C_os

g_os

100

120 µS

90 µS

typ.

Noise ﬁgure at optimum source admittance

G_S= 1 mS; −B_S= 3 mS;

f = 100 MHz

typ.

1.5

1.5 dB

MDA275

MDA276

1.5

handbook, halfpage

BF513

(mS)

(pF)

BF512

BF511

BF510

0.5

typ

(V)

(mA)

Fig.2 V_GS= 0 for BF510 and BF511;

I_D= 5 mA for BF512 and BF513;

f = 1 MHz; T_amb= 25 °C.

Fig.3 V_DS= 10 V; f = 1 kHz; T_amb= 25 °C; typical

values.

December 1997

Philips Semiconductors

Product speciﬁcation

N-channel silicon ﬁeld-effect transistors

BF510 to 513

MDA245

300

handbook, halfpage

tot

(mW)

200

100

120

160

200

(°C)

amb

Fig.4 Power derating curve.

December 1997

Philips Semiconductors

Product speciﬁcation

N-channel silicon ﬁeld-effect transistors

BF510 to 513

PACKAGE OUTLINE

Plastic surface mounted package; 3 leads

SOT23

w M

detail X

2 mm

scale

DIMENSIONS (mm are the original dimensions)

UNIT

max.

1.1

0.9

0.48

0.38

0.15

0.09

3.0

2.8

1.4

1.2

2.5

2.1

0.45

0.15

0.55

0.45

0.1

1.9

0.95

0.2

0.1

REFERENCES

JEDEC

EUROPEAN

PROJECTION

OUTLINE

VERSION

ISSUE DATE

IEC

EIAJ

97-02-28

SOT23

December 1997

Philips Semiconductors

Product speciﬁcation

N-channel silicon ﬁeld-effect transistors

BF510 to 513

DEFINITIONS

Data sheet status

Objective speciﬁcation

Preliminary speciﬁcation

Product speciﬁcation

Short-form speciﬁcation

This data sheet contains target or goal speciﬁcations for product development.

This data sheet contains preliminary data; supplementary data may be published later.

This data sheet contains ﬁnal product speciﬁcations.

The data in this speciﬁcation is extracted from a full data sheet with the same type

number and title. For detailed information see the relevant data sheet or data handbook.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or

more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation

of the device at these or at any other conditions above those given in the Characteristics sections of the speciﬁcation

is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the speciﬁcation.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these

products can reasonably be expected to result in personal injury. Philips customers using or selling these products for

use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such

improper use or sale.

December 1997

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