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BU2727AF

更新时间：2025-06-10 02:14:47

品牌：NXP

描述：Silicon Diffused Power Transistor

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BU2727AF 概述

Silicon Diffused Power Transistor 硅扩散型功率晶体管

BU2727AF 数据手册

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Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BU2727AF

GENERAL DESCRIPTION

High voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal

deflection circuits of high resolution monitors. Designed to withstand V_CESpulses up to 1700V.

QUICK REFERENCE DATA

SYMBOL PARAMETER

CONDITIONS

TYP. MAX. UNIT

V_CESM

V_CEO

I_C

Collector-emitter voltage peak value

V_BE= 0 V

1700

825

Collector-emitter voltage (open base)

Collector current (DC)

I_CM

Collector current peak value

Total power dissipation

Collector-emitter saturation voltage

Collector saturation current

Storage time

P_tot

T_hs≤ 25 ˚C

V_CEsat

I_Csat

t_s

I_C= 5.0 A; I_B= 0.91 A

f = 64 kHz

1.0

5.0

2.5

I_Csat= 5.0 A; f = 64 kHz

3.0

µs

PINNING - SOT199

PIN CONFIGURATION

SYMBOL

DESCRIPTION

case

base

collector

emitter

case isolated

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)

SYMBOL PARAMETER

CONDITIONS

MIN. MAX. UNIT

V_CESM

V_CEO

I_C

Collector-emitter voltage peak value

V_BE= 0 V

1700

825

Collector-emitter voltage (open base)

Collector current (DC)

I_CM

Collector current peak value

Base current (DC)

I_B

I_BM

-I_B(AV)

-I_BM

P_tot

T_stg

T_j

Base current peak value

Reverse base current

average over any 20 ms period

200

Reverse base current peak value ¹

Total power dissipation

Storage temperature

T_hs≤ 25 ˚C

˚C

-65

150

Junction temperature

ESD LIMITING VALUES

SYMBOL PARAMETER

CONDITIONS

MIN. MAX. UNIT

V_C

Electrostatic discharge capacitor voltage Human body model (250 pF,

1.5 kΩ)

1 Turn-off current.

September 1997

Rev 1.100

Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BU2727AF

THERMAL RESISTANCES

SYMBOL PARAMETER

CONDITIONS

TYP. MAX. UNIT

R_{th j-hs}

R_{th j-a}

Junction to heatsink

Junction to ambient

without heatsink compound

with heatsink compound

in free air

3.7

2.8

K/W

ISOLATION LIMITING VALUE & CHARACTERISTIC

T_hs= 25 ˚C unless otherwise specified

SYMBOL PARAMETER

CONDITIONS

MIN. TYP. MAX. UNIT

V_isol

C_isol

Repetitive peak voltage from all R.H. ≤ 65 % ; clean and dustfree

2500

three terminals to external

heatsink

Capacitance from T2 to external f = 1 MHz

heatsink

STATIC CHARACTERISTICS

T_hs= 25 ˚C unless otherwise specified

SYMBOL PARAMETER

CONDITIONS

MIN. TYP. MAX. UNIT

I_CES

Collector cut-off current ²

V_BE= 0 V; V_CE= V_CESMmax

T_j= 125 ˚C

1.0

2.0

;

I_EBO

BV_EBO

V_CEOsust

Emitter cut-off current

Emitter-base breakdown voltage

V_EB= 7.5 V; I_C= 0 A

I_B= 1 mA

13.5

1.0

7.5

825

Collector-emitter sustaining voltage I_B= 0 A; I_C= 100 mA;

L = 25 mH

V_CEsat

V_BEsat

h_FE

Collector-emitter saturation voltage I_C= 5.0 A; I_B= 0.91 A

1.0

Base-emitter saturation voltage

DC current gain

I_C= 5.0 A; I_B= 0.91 A

I_C= 0.1 A; V_CE= 5 V

I_C= 5 A; V_CE= 1 V

h_FE

5.5

DYNAMIC CHARACTERISTICS

T_hs= 25 ˚C unless otherwise specified

SYMBOL PARAMETER

CONDITIONS

TYP. MAX. UNIT

Switching times (64 kHz line

deflection circuit)

I_Csat= 5.0 A; L_C= 260 µH;

C_fb= 4.8 nF; V_CC= 180 V;

I_B(end)= 0.9 A; L_B= 0.6 µH; -V_BB= 2 V;

(-dI_B/dt = 3.33 A/µs)

t_s

t_f

Turn-off storage time

Turn-off fall time

2.5

0.30

3.0

0.39

µs

2 Measured with half sine-wave voltage (curve tracer).

September 1997

Rev 1.100

Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BU2727AF

ICsat

90 %

+ 50v

100-200R

10 %

Horizontal

Oscilloscope

IBend

Vertical

100R

30-60 Hz

- IBM

Fig.1. Test circuit for V_CEOsust

Fig.4. Switching times definitions.

IC / mA

+ 150 v nominal

adjust for ICsat

250

200

T.U.T.

IBend

-VBB

100

Cfb

min

VCE / V

VCEOsust

Fig.2. Oscilloscope display for V_CEOsust

Fig.5. Switching times test circuit.

ICsat

hFE

BU2727A/AF

TRANSISTOR

100

VCE = 5 V

DIODE

Ths = 25 C

Ths = 85 C

end

5 us

6.5 us

16 us

0.01

0.1

100

IC / A

Fig.3. Switching times waveforms (64 kHz).

Fig.6. DC current gain. h_FE= f (I_C)

Parameter T_hs

(Low and high gain)

September 1997

Rev 1.100

Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BU2727AF

Normalised Power Derating

with heatsink compound

hFE

BU2727A/AF

PD%

120

110

100

VCE = 1 V

Ths = 25 C

Ths = 85 C

Ths /

100

120

140

0.01

0.1

100

IC / A

Fig.7. DC current gain. h_FE= f (I_C)

Parameter T_hs

Fig.10. Normalised power dissipation.

PD% = 100 PD/PD 25˚C = f (T_hs)

(Low and high gain)

Zth / (K/W)

0.5

BU2525AF

VCEsat / V

BU2727A/AF

Ths = 85 C

Ths = 25 C

0.1

0.2

0.1

0.05

0.02

IC/IB = 12

IC/IB = 5

D =

0.1

0.01

0.001

D = 0

1E-06

1E-04

1E-02

t / s

1E+00

0.1

100

IC / A

Fig.11. Transient thermal impedance.

Fig.8. Typical collector-emitter saturation voltage.

_{th j-hs}= f(t); parameter D = t_p/T

_CEsat= f (I_C); parameter I_C/I_B

VCC

VBEsat / V

BU2727A/AF

0.9

0.8

0.7

0.6

IC = 6 A

VCL

IBend

-VBB

CFB

T.U.T.

4 A

Ths = 85 C

Ths = 25 C

Fig.12. Test Circuit RBSOA.

V_CC= 150 V; -V_BB= 1 - 4 V;

IB / A

Fig.9. Typical base-emitter saturation voltage.

V_BEsat= f (I_B); parameter I_C

L_C= 1 mH; V_CL= 1500 V; L_B= 0.5 - 2 µH;

C_FB= 1 - 3 nF; I_B(end)= 0.8 - 4 A

September 1997

Rev 1.100

Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BU2727AF

IC / A

BU2727A/AF/D/DF

Area where

fails occur

100

1000

1700

VCE / V

Fig.13. Reverse bias safe operating area. T_j≤ T_jmax

September 1997

Rev 1.100

Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BU2727AF

MECHANICAL DATA

Dimensions in mm

15.3 max

5.2 max

Net Mass: 5.5 g

3.1

3.3

0.7

7.3

3.2

6.2

5.8

21.5

max

seating

plane

3.5 max

not tinned

3.5

15.7

min

1.2

1.0

0.7 max

2.0

2.1 max

0.4

5.45

Fig.14. SOT199; The seating plane is electrically isolated from all terminals.

Notes

1. Refer to mounting instructions for F-pack envelopes.

2. Epoxy meets UL94 V0 at 1/8".

September 1997

Rev 1.100

Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BU2727AF

DEFINITIONS

Data sheet status

Objective specification

This data sheet contains target or goal specifications for product development.

Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.

Product specification

This data sheet contains final product specifications.

Limiting values

Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one

or more of the limiting values may cause permanent damage to the device. These are stress ratings only and

operation of the device at these or at any other conditions above those given in the Characteristics sections of

this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

Philips Electronics N.V. 1997

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the

The information presented in this document does not form part of any quotation or contract, it is believed to be

accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any

consequence of its use. Publication thereof does not convey nor imply any license under patent or other

industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these

products can be reasonably expected to result in personal injury. Philips customers using or selling these products

for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting

from such improper use or sale.

September 1997

Rev 1.100

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