概述
规格参数
数据手册1N4001ID 概述
Rectifiers 整流器 整流二极管
1N4001ID 规格参数
| 是否Rohs认证： | 不符合 | 生命周期： | Obsolete |
| 包装说明： | O-LALF-W2 | 针数： | 2 |
| Reach Compliance Code： | unknown | ECCN代码： | EAR99 |
| HTS代码： | 8541.10.00.80 | 风险等级： | 5.65 |
| 外壳连接： | ISOLATED | 配置： | SINGLE |
| 二极管元件材料： | SILICON | 二极管类型： | RECTIFIER DIODE |
| 最大正向电压 (VF)： | 1.1 V | JESD-30 代码： | O-LALF-W2 |
| 最大非重复峰值正向电流： | 20 A | 元件数量： | 1 |
| 端子数量： | 2 | 最高工作温度： | 175 °C |
| 最大输出电流： | 1 A | 封装主体材料： | GLASS |
| 封装形状： | ROUND | 封装形式： | LONG FORM |
| 认证状态： | Not Qualified | 最大重复峰值反向电压： | 50 V |
| 子类别： | Rectifier Diodes | 表面贴装： | NO |
| 端子形式： | WIRE | 端子位置： | AXIAL |
| Base Number Matches： | 1 |
1N4001ID 数据手册
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PDF下载DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
1N4001ID to 1N4007ID
Rectifiers
1996 Jun 10
Product specification
Supersedes data of April 1992
Philips Semiconductors
Product specification
Rectifiers
1N4001ID to 1N4007ID
This package is hermetically sealed
and fatigue free as coefficients of
expansion of all used parts are
matched.
FEATURES
DESCRIPTION
• Glass passivated
Cavity free cylindrical glass package
through Implotec (1) technology.
• High maximum operating
temperature
(1) Implotec is a trademark of Philips.
• Low leakage current
• Excellent stability
k
a
• Available in ammo-pack.
handbook, 4 columns
MAM123
Fig.1 Simplified outline (SOD81) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VRRM
repetitive peak reverse voltage
1N4001ID
−
−
−
−
−
−
−
50
100
200
400
600
800
V
V
V
V
V
V
V
1N4002ID
1N4003ID
1N4004ID
1N4005ID
1N4006ID
1N4007ID
1000
VR
continuous reverse voltage
1N4001ID
−
−
−
−
−
−
−
−
50
100
V
V
V
V
V
V
V
1N4002ID
1N4003ID
200
1N4004ID
400
1N4005ID
600
1N4006ID
800
1N4007ID
1000
IF(AV)
1.00 A
average forward current
averaged over any 20 ms
period; Tamb = 75 °C; see Fig.2
−
0.75 A
averaged over any 20 ms
period; Tamb = 100 °C; see Fig.2
IFRM
IFSM
Tstg
Tj
repetitive peak forward current
non-repetitive peak forward current
storage temperature
−
10
A
A
half sinewave; 60 Hz
−
20
+175
+175
−65
−65
°C
°C
junction temperature
1996 Jun 10
2
Philips Semiconductors
Product specification
Rectifiers
1N4001ID to 1N4007ID
ELECTRICAL CHARACTERISTICS
Tj = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
forward voltage
CONDITIONS
IF = 1 A; see see Fig.3
MAX.
UNIT
VF
1.1
0.8
10
V
V
VF(AV)
IR
full-cycle average forward voltage
reverse current
IF(AV) = 1 A
VR = VRmax
µA
µA
µA
VR = VRmax; Tamb = 100 °C
VR = VRRMmax; Tamb = 75 °C
50
IR(AV)
full-cycle average reverse current
30
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
lead length = 10 mm
note 1
VALUE
60
UNIT
Rth j-tp
Rth j-a
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
K/W
K/W
120
Note
1. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper ≥40 µm, see Fig.4.
For more information please refer to the “General Part of associated Handbook”.
1996 Jun 10
3
Philips Semiconductors
Product specification
Rectifiers
1N4001ID to 1N4007ID
GRAPHICAL DATA
MBH386
MBH385
10
1.5
handbook, halfpage
handbook, halfpage
I
F
(A)
I
F
(A)
1
1
0.5
(1)
(2)
(3)
1
−1
10
0
0
0
0.5
1.5
100
200
T
(°C)
V
(V)
amb
F
(1) Tamb = 100 °C.
(2) Tamb = 20 °C.
(3) Tamb = −50 °C.
Fig.2 Maximum forward current as a function of
ambient temperature.
Fig.3 Forward current as a function of forward
voltage; typical values.
50
handbook, halfpage
25
7
50
2
3
MGA200
Dimensions in mm.
Fig.4 Device mounted on a printed-circuit board.
1996 Jun 10
4
Philips Semiconductors
Product specification
Rectifiers
1N4001ID to 1N4007ID
PACKAGE OUTLINE
5 max
0.81
max
2.15
max
MBC051
28 min
3.8 max
28 min
Dimensions in mm.
Fig.5 SOD81.
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 Jun 10
5
1N4001ID 相关器件
| 型号 | 制造商 | 描述 | 价格 | 文档 |
| 1N4001ID133 | NXP | 1A, 50V, SILICON, SIGNAL DIODE | 获取价格 |
|
| 1N4001ID143 | NXP | 1A, 50V, SILICON, SIGNAL DIODE | 获取价格 |
|
| 1N4001IDT/R | NXP | 1A, 50V, SILICON, SIGNAL DIODE | 获取价格 |
|
| 1N4001L | DIODES | 1.0A RECTIFIER | 获取价格 |
|
| 1N4001L | GOOD-ARK | 1.0 AMP.GLASS PASSIVATED RECTIFIERS | 获取价格 |
|
| 1N4001L | HOTTECH | SOD-123FL | 获取价格 |
|
| 1N4001L-T | DIODES | 1.0A RECTIFIER | 获取价格 |
|
| 1N4001LG | GOOD-ARK | 1.0 AMP.GLASS PASSIVATED RECTIFIERS | 获取价格 |
|
| 1N4001M04 | RECTRON | Rectifier Diode, 1 Element, 1A, 50V V(RRM), Silicon, DO-41, DO-41, 2 PIN | 获取价格 |
|
| 1N4001M05 | RECTRON | Rectifier Diode, 1 Element, 1A, 50V V(RRM), Silicon, DO-41, DO-41, 2 PIN | 获取价格 |
|
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