概述
规格参数
数据手册CR04AM-12A-B#B00 概述
600V - 0.4A - Thyristor Low Power Use 可控硅整流器
CR04AM-12A-B#B00 规格参数
| 是否Rohs认证： | 符合 | 生命周期： | Not Recommended |
| 零件包装代码： | TO-92* | 针数： | 3 |
| Reach Compliance Code： | compliant | ECCN代码： | EAR99 |
| 风险等级： | 5.63 | 最大直流栅极触发电流： | 0.05 mA |
| 最大直流栅极触发电压： | 0.8 V | 最大维持电流： | 3 mA |
| 最大漏电流： | 0.5 mA | 通态非重复峰值电流： | 10 A |
| 最大通态电流： | 400 A | 最高工作温度： | 125 °C |
| 最低工作温度： | -40 °C | 断态重复峰值电压： | 600 V |
| 子类别： | Silicon Controlled Rectifiers | 表面贴装： | NO |
| 触发设备类型： | SCR | Base Number Matches： | 1 |
CR04AM-12A-B#B00 数据手册
通过下载CR04AM-12A-B#B00数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。
PDF下载Preliminary Datasheet
CR04AM-12A
600V - 0.4A - Thyristor
Low Power Use
R07DS0636EJ0300
Rev.3.00
Aug 25, 2015
Features
IT (AV) : 0.4 A
DRM : 600 V
GT : 100 A
RoHS Compliant
Non-Insulated Type
Planar Passivation Type
Halogen-free package (PRSS0003DJ-A)
Completely Pb-free package (PRSS0003DJ-A)
V
I
Outline
RENESAS Package code: PRSS0003EA-A
PRSS0003DJ-A
(Package name: TO-92*) (Package name: TO-92)
2
1
1. Cathode
2. Anode
3. Gate
3
3
3
2
2
1
1
Applications
Solid state relay, igniter, strobe flasher, circuit breaker, and general purpose control applications
Maximum Ratings
Voltage class
Parameter
Symbol
Unit
12
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
Repetitive peak off-state voltage Note1
DC off-state voltage Note1
VRRM
VRSM
VR(DC)
VDRM
VD(DC)
600
720
480
600
480
V
V
V
V
V
Notes: 1. With gate to cathode resistance RGK=1 k
R07DS0636EJ0300 Rev.3.00
Aug 25, 2015
Page 1 of 8
CR04AM-12A
Preliminary
Parameter
Symbol
IT(RMS)
IT(AV)
Ratings
0.63
Unit
A
Conditions
RMS on-state current
Average on-state current
0.4
A
Commercial frequency, sine half wave
180 conduction, Ta=54C
Surge on-state current
I2t for fusing
ITSM
I2t
10
A
60Hz sine half wave, 1full cycle,
peak value, non-repetitive
0.4
A2s
Value corresponding to 1cycle of half
wave 60Hz, surge on-state current
Peak gate power dissipation
Average gate power dissipation
Peak gate forward voltage
Peak gate reverse voltage
Peak gate forward current
Junction temperature
Storage temperature
PGM
PG(AV)
VFGM
VRGM
IFGM
Tj
0.5
W
W
V
0.1
6
6
V
0.3
A
– 40 to +125
– 40 to +125
0.23
C
C
g
Tstg
—
Mass
Typical value
Electrical Characteristics
Parameter
Symbol
IRRM
IDRM
Min.
Typ.
—
Max.
0.5
Unit
mA
mA
Test conditions
Tj = 125C, VRRM applied
Tj = 125C, VDRM applied
RGK=1 k
Repetitive peak reverse current
Repetitive peak off-state current
—
—
—
0.5
On-state voltage
VTM
VGT
VGD
IGT
—
—
—
—
—
—
1.2
0.8
V
V
Tj = 25C, ITM = 1.2 A
instantaneous value
Tj = 25C, VD = 6 V,
IT = 0.1 A Note3
Gate trigger voltage
Gate non-trigger voltage
Gate trigger current
0.2
—
V
Tj = 125C, VD = 1/2 VDRM
RGK = 1 K
1Note2
100Note2
µA
Tj = 25C, VD = 6 V,
IT = 0.1 A Note3
Holding current
IH
—
—
1.5
—
3
mA
Tj = 25°C, VD = 12 V, RGK = 1 k
Junction to ambient
Thermal resistance
Rth(j-a)
150
C/W
Notes: 2. If special values of IGT are required, choose item D or E from those listed in the table below if possible.
Item
A
B
D
E
IGT (A)
1 to 30
20 to 50
1 to 50
20 to 100
The above values do not include the current flowing through the 1 k resistance between the gate and
cathode.
3. IGT, VGT measurement circuit.
60Ω
A1
I
I
GS
GT
TUT
A3
A2
6V
DC
3V
DC
V1
R
GK
1
2
V
1kΩ
Switch
GT
Switch 1 : I
measurement
measurement
(Inner resistance of voltage meter is about 1kΩ)
GT
Switch 2 : V
GT
R07DS0636EJ0300 Rev.3.00
Aug 25, 2015
Page 2 of 8
CR04AM-12A
Preliminary
Performance Curves
Maximum On-State Characteristics
Rated Surge On-State Current
102
10
8
Ta = 25°C
101
6
4
100
2
10−1
0
5
100
101
102
0
1
2
3
4
On-State Voltage (V)
Conduction Time (Cycles at 60Hz)
Gate Trigger Current vs.
Junction Temperature
Gate Characteristics
103
102
101
100
102
101
Typical Example
V
= 6V
P
= 0.5W
GM
FGM
V
= 0.8V
GT
(Tj = 25°C)
P
= 0.1W
G(AV)
100
I
= 100μA
(Tj = 25°C)
GT
10−1
I
= 0.3V
FGM
V
= 0.2V
GD
10−2
10−2
10−1
100
101
102
0
40
80
120
–40
160
Gate Current (mA)
Junction Temperature (°C)
Gate Trigger Voltage vs.
Junction Temperature
Maximum Transient Thermal Impedance
Characteristics (Junction to ambient)
100
101
102
103
103
1.0
0.8
0.6
0.4
0.2
0
Distribution
Typical Example
102
101
100
–40 –20
0
20 40 60 80 100 120
10−3
10−2
10−1
100
Junction Temperature (°C)
Time (s)
R07DS0636EJ0300 Rev.3.00
Aug 25, 2015
Page 3 of 8
CR04AM-12A
Preliminary
Allowable Ambient Temperature vs.
Average On-State Current
(Single-Phase Half Wave)
Maximum Average Power Dissipation
(Single-Phase Half Wave)
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
160
140
120
100
80
60° 120°
90°
θ = 30°
θ
180°
360°
Resistive,
inductive loads
Natural convection
60
θ = 30° 90°
60° 120°
180°
θ
40
360°
20
Resistive,
inductive loads
0
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
Average On-State Current (A)
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
Average On-State Current (A)
Allowable Ambient Temperature vs.
Average On-State Current
(Single-Phase Full Wave)
Maximum Average Power Dissipation
(Single-Phase Full Wave)
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
160
140
120
100
80
90°
60° 120°
180°
θ = 30°
θ
θ
360°
Resistive loads
Natural convection
60
40
θ
θ
360°
20
θ = 30° 60° 90° 120° 180°
Resistive loads
0
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
Average On-State Current (A)
Average On-State Current (A)
Allowable Ambient Temperature vs.
Average On-State Current
(Rectangular Wave)
Maximum Average Power Dissipation
(Rectangular Wave)
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
160
140
120
100
80
90° 180°
60° 120°270°
θ = 30°
θ
DC
360°
Resistive,
inductive loads
Natural convection
60
θ
40
360°
60° 120°
90° 180°
270°
20
Resistive,
inductive loads
θ = 30°
DC
0
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
Average On-State Current (A)
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
Average On-State Current (A)
R07DS0636EJ0300 Rev.3.00
Aug 25, 2015
Page 4 of 8
CR04AM-12A
Preliminary
Breakover Voltage vs.
Gate to Cathode Resistance
Breakover Voltage vs.
Junction Temperature
160
120
100
80
60
40
20
0
Typical Example
Typical Example
140
120
100
80
60
40
20
R
= 1kΩ
GK
Tj = 125°C
0
–40
0
40
80
120
160
10−1
100
101
102
Gate to Cathode Resistance (kΩ)
Junction Temperature (°C)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage
Holding Current vs.
Junction Temperature
160
140
120
100
80
101
Distribution
Typical Example
Tj = 125°C
= 1kΩ
Typical Example
(25°C) = 35μA
R
GK
I
GT
100
60
10−1
40
20
R
= 1kΩ
GK
10−2
0
100
101
102
103
–40 –20
0
20 40 60 80 100 120 140
Rate of Rise of Off-State Voltage (V/μs)
Junction Temperature (°C)
Turn-On Time vs.
Gate Current
Holding Current vs.
Gate to Cathode Resistance
600
102
Typical Example
V = 100V
D
R = 47Ω
Typical Example
L
500
400
300
200
100
0
R
= 1kΩ
GK
Ta = 25°C
101
100
Tj = 125°C
100
10−1
10−1
101
102
10−1
100
101
102
Gate Current (mA)
Gate to Cathode Resistance (kΩ)
R07DS0636EJ0300 Rev.3.00
Aug 25, 2015
Page 5 of 8
CR04AM-12A
Preliminary
Turn-Off Time vs.
Junction Temperature
Repetitive Peak Reverse Voltage vs.
Junction Temperature
40
160
140
120
100
80
V
= 50V, V = 50V
R
D
I
T
= 2A, R
= 1kΩ
GK
35
30
25
20
15
10
5
Typical Example
Distribution
60
40
20
0
0
–40
0
20 40 60 80 100 120 140 160
Junction Temperature (°C)
0
40
80
120
160
Junction Temperature (°C)
Gate Trigger Current vs.
Gate Current Pulse Width
104
103
102
101
Typical Example
V
= 6V
R = 60Ω
D
L
Ta = 25°C
100
101
102
103
Gate Current Pulse Width (μs)
R07DS0636EJ0300 Rev.3.00
Aug 25, 2015
Page 6 of 8
CR04AM-12A
Preliminary
Package Dimensions
Package Name
JEITA Package Code
RENESAS Code
PRSS0003EA-A
Previous Code
T920
MASS[Typ.]
0.23g
Unit: mm
TO-92*
SC-43A
φ5.0Max
4.4
1.251.25
Circumscribed circle φ0.7
JEITA Package Code
RENESAS Code
PRSS0003DJ-A
Previous Code
MASS (Typ) [g]
0.23
SC-43A
TO-92
Unit: mm
4.58−+00..2155
0.38−+00..1050
0.46 0.1
1.27
R07DS0636EJ0300 Rev.3.00
Aug 25, 2015
Page 7 of 8
CR04AM-12A
Preliminary
Ordering Information
Orderable Part Number Package
Packing Note
Quantity
Remark
CR04AM-12A#B00
TO-92* Plastic Bag
TO-92* Plastic Bag
TO-92* Plastic Bag
TO-92* Plastic Bag
500 pcs. Straight type
CR04AM-12A-#B00
CR04AM-12A-A6#B00
CR04AM-12A-A6#B00
CR04AM-12A-TB#B00
CR04AM-12A-TB#B00
CR04AM-12A #BD0
500 pcs. Straight type, :IGT item
500 pcs. A6 Lead form
500 pcs. A6 Lead form, :IGT item
TO-92* Adhesive Tape 2000 pcs. A8 Lead form
TO-92* Adhesive Tape 2000 pcs. A8 Lead form, :IGT item
TO-92 Plastic Bag
TO-92 Plastic Bag
TO-92 Plastic Bag
TO-92 Plastic Bag
1000 pcs. Straight type, Halogen-free
CR04AM-12A-#BD0
CR04AM-12A-A6#BD0
CR04AM-12A-A6#BD0
CR04AM-12A-TB#BD0
CR04AM-12A-TB#BD0
1000 pcs. Straight type, Halogen-free, :IGT item
1000 pcs. A6 Lead form, Halogen-free
1000 pcs. A6 Lead form, Halogen-free, :IGT item
TO-92 Adhesive Tape 2000 pcs. A8 Lead form, Halogen-free
TO-92 Adhesive Tape 2000 pcs. A8 Lead form, Halogen-free, :IGT item
Note : Please confirm the specification about the shipping in detail.
R07DS0636EJ0300 Rev.3.00
Aug 25, 2015
Page 8 of 8
Notice
1. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for
the incorporation of these circuits, software, and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the
use of these circuits, software, or information.
2. Renesas Electronics has used reasonable care in preparing the information included in this document, but Renesas Electronics does not warrant that such information is error free. Renesas Electronics
assumes no liability whatsoever for any damages incurred by you resulting from errors in or omissions from the information included herein.
3. Renesas Electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property rights of third parties by or arising from the use of Renesas Electronics products or
technical information described in this document. No license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights of Renesas Electronics or
others.
4. You should not alter, modify, copy, or otherwise misappropriate any Renesas Electronics product, whether in whole or in part. Renesas Electronics assumes no responsibility for any losses incurred by you or
third parties arising from such alteration, modification, copy or otherwise misappropriation of Renesas Electronics product.
5. Renesas Electronics products are classified according to the following two quality grades: "Standard" and "High Quality". The recommended applications for each Renesas Electronics product depends on
the product's quality grade, as indicated below.
"Standard": Computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools; personal electronic
equipment; and industrial robots etc.
"High Quality": Transportation equipment (automobiles, trains, ships, etc.); traffic control systems; anti-disaster systems; anti-crime systems; and safety equipment etc.
Renesas Electronics products are neither intended nor authorized for use in products or systems that may pose a direct threat to human life or bodily injury (artificial life support devices or systems, surgical
implantations etc.), or may cause serious property damages (nuclear reactor control systems, military equipment etc.). You must check the quality grade of each Renesas Electronics product before using it
in a particular application. You may not use any Renesas Electronics product for any application for which it is not intended. Renesas Electronics shall not be in any way liable for any damages or losses
incurred by you or third parties arising from the use of any Renesas Electronics product for which the product is not intended by Renesas Electronics.
6. You should use the Renesas Electronics products described in this document within the range specified by Renesas Electronics, especially with respect to the maximum rating, operating supply voltage
range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. Renesas Electronics shall have no liability for malfunctions or damages arising out of the
use of Renesas Electronics products beyond such specified ranges.
7. Although Renesas Electronics endeavors to improve the quality and reliability of its products, semiconductor products have specific characteristics such as the occurrence of failure at a certain rate and
malfunctions under certain use conditions. Further, Renesas Electronics products are not subject to radiation resistance design. Please be sure to implement safety measures to guard them against the
possibility of physical injury, and injury or damage caused by fire in the event of the failure of a Renesas Electronics product, such as safety design for hardware and software including but not limited to
redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. Because the evaluation of microcomputer software alone is very difficult,
please evaluate the safety of the final products or systems manufactured by you.
8. Please contact a Renesas Electronics sales office for details as to environmental matters such as the environmental compatibility of each Renesas Electronics product. Please use Renesas Electronics
products in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. Renesas Electronics assumes
no liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations.
9. Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign laws or
regulations. You should not use Renesas Electronics products or technology described in this document for any purpose relating to military applications or use by the military, including but not limited to the
development of weapons of mass destruction. When exporting the Renesas Electronics products or technology described in this document, you should comply with the applicable export control laws and
regulations and follow the procedures required by such laws and regulations.
10. It is the responsibility of the buyer or distributor of Renesas Electronics products, who distributes, disposes of, or otherwise places the product with a third party, to notify such third party in advance of the
contents and conditions set forth in this document, Renesas Electronics assumes no responsibility for any losses incurred by you or third parties as a result of unauthorized use of Renesas Electronics
products.
11. This document may not be reproduced or duplicated in any form, in whole or in part, without prior written consent of Renesas Electronics.
12. Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this document or Renesas Electronics products, or if you have any other inquiries.
(Note 1) "Renesas Electronics" as used in this document means Renesas Electronics Corporation and also includes its majority-owned subsidiaries.
(Note 2) "Renesas Electronics product(s)" means any product developed or manufactured by or for Renesas Electronics.
SALES OFFICES
http://www.renesas.com
Refer to "http://www.renesas.com/" for the latest and detailed information.
Renesas Electronics America Inc.
2801 Scott Boulevard Santa Clara, CA 95050-2549, U.S.A.
Tel: +1-408-588-6000, Fax: +1-408-588-6130
Renesas Electronics Canada Limited
9251 Yonge Street, Suite 8309 Richmond Hill, Ontario Canada L4C 9T3
Tel: +1-905-237-2004
Renesas Electronics Europe Limited
Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K
Tel: +44-1628-585-100, Fax: +44-1628-585-900
Renesas Electronics Europe GmbH
Arcadiastrasse 10, 40472 Düsseldorf, Germany
Tel: +49-211-6503-0, Fax: +49-211-6503-1327
Renesas Electronics (China) Co., Ltd.
Room 1709, Quantum Plaza, No.27 ZhiChunLu Haidian District, Beijing 100191, P.R.China
Tel: +86-10-8235-1155, Fax: +86-10-8235-7679
Renesas Electronics (Shanghai) Co., Ltd.
Unit 301, Tower A, Central Towers, 555 Langao Road, Putuo District, Shanghai, P. R. China 200333
Tel: +86-21-2226-0888, Fax: +86-21-2226-0999
Renesas Electronics Hong Kong Limited
Unit 1601-1611, 16/F., Tower 2, Grand Century Place, 193 Prince Edward Road West, Mongkok, Kowloon, Hong Kong
Tel: +852-2265-6688, Fax: +852 2886-9022
Renesas Electronics Taiwan Co., Ltd.
13F, No. 363, Fu Shing North Road, Taipei 10543, Taiwan
Tel: +886-2-8175-9600, Fax: +886 2-8175-9670
Renesas Electronics Singapore Pte. Ltd.
80 Bendemeer Road, Unit #06-02 Hyflux Innovation Centre, Singapore 339949
Tel: +65-6213-0200, Fax: +65-6213-0300
Renesas Electronics Malaysia Sdn.Bhd.
Unit 1207, Block B, Menara Amcorp, Amcorp Trade Centre, No. 18, Jln Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia
Tel: +60-3-7955-9390, Fax: +60-3-7955-9510
Renesas Electronics India Pvt. Ltd.
No.777C, 100 Feet Road, HALII Stage, Indiranagar, Bangalore, India
Tel: +91-80-67208700, Fax: +91-80-67208777
Renesas Electronics Korea Co., Ltd.
12F., 234 Teheran-ro, Gangnam-Gu, Seoul, 135-080, Korea
Tel: +82-2-558-3737, Fax: +82-2-558-5141
© 2015 Renesas Electronics Corporation. All rights reserved.
Colophon 5.0
CR04AM-12A-B#B00 相关器件
| 型号 | 制造商 | 描述 | 价格 | 文档 |
| CR04AM-12A-B#BD0 | RENESAS | 600V - 0.4A - Thyristor Low Power Use | 获取价格 |
|
| CR04AM-12A-B-B00 | RENESAS | Thyristor Low Power Use | 获取价格 |
|
| CR04AM-12A-B-B10 | RENESAS | Thyristor Low Power Use | 获取价格 |
|
| CR04AM-12A-B00 | RENESAS | Thyristor Low Power Use | 获取价格 |
|
| CR04AM-12A-B10 | RENESAS | Thyristor Low Power Use | 获取价格 |
|
| CR04AM-12A-BA6-B00 | RENESAS | Thyristor Low Power Use | 获取价格 |
|
| CR04AM-12A-BTB#B00 | RENESAS | 600V - 0.4A - Thyristor Low Power Use | 获取价格 |
|
| CR04AM-12A-BTB#BD0 | RENESAS | 600V - 0.4A - Thyristor Low Power Use | 获取价格 |
|
| CR04AM-12A-BTB-B00 | RENESAS | Thyristor Low Power Use | 获取价格 |
|
| CR04AM-12A-D#B00 | RENESAS | 600V - 0.4A - Thyristor Low Power Use | 获取价格 |
|
CR04AM-12A-B#B00 相关文章
中国台湾取消对台积电海外生产2nm芯片限制
- 2025-01-14
- 4
英伟达AI芯片机架过热问题引发关注，微软等客户削减订单
- 2025-01-14
- 3
Arm拟大幅提高芯片设计授权费用300%，并考虑自主开发芯片
- 2025-01-14
- 5
Rapidus计划6月向博通交付2nm芯片，日本半导体产业迈出新步伐
- 2025-01-14
- 4
