CR12CM-12B#BH0

更新时间:2024-12-04 10:57:44
品牌:RENESAS
描述:600V - 12A - Thyristor Medium Power Use

CR12CM-12B#BH0 概述

600V - 12A - Thyristor Medium Power Use

CR12CM-12B#BH0 数据手册

通过下载CR12CM-12B#BH0数据手册来全面了解它。这个PDF文档包含了所有必要的细节,如产品概述、功能特性、引脚定义、引脚排列图等信息。

PDF下载
Preliminary Datasheet  
CR12CM-12B  
R07DS0232EJ0100  
Rev.1.00  
Thyristor  
Medium Power Use  
Dec 20, 2010  
Features  
IT (AV) : 12 A  
DRM : 600 V  
GT : 30 mA  
The product guaranteed maximum junction  
temperature of 150°C  
Non-Insulated Type  
Planar Passivation Type  
V
I
Outline  
RENESAS Package code: PRSS0004AA-A  
(Package name: TO-220)  
4
2, 4  
1. Cathode  
2. Anode  
3. Gate  
4. Anode  
3
1
1
2
3
Applications  
Switching mode power supply, regulator for autocycle, motor control, heater control, and other general purpose control  
applications  
Maximum Ratings  
Voltage class  
Parameter  
Symbol  
Unit  
12  
Repetitive peak reverse voltage  
Non-repetitive peak reverse voltage  
DC reverse voltage  
VRRM  
VRSM  
600  
720  
480  
600  
480  
V
V
V
V
V
VR (DC)  
VDRM  
Repetitive peak off-state voltage  
DC off-state voltage  
VD (DC)  
R07DS0232EJ0100 Rev.1.00  
Dec 20, 2010  
Page 1 of 7  
CR12CM-12B  
Preliminary  
Parameter  
Symbol  
IT (RMS)  
IT (AV)  
Ratings  
18.8  
Unit  
A
Conditions  
RMS on-state current  
Average on-state current  
12  
A
Commercial frequency, sine half wave  
180° conduction, Tc = 116°CNote2  
Surge on-state current  
I2t for fusing  
ITSM  
I2t  
360  
544  
A
60Hz sine half wave 1 full cycle,  
peak value, non-repetitive  
A2s  
Value corresponding to 1 cycle of half  
wave 60Hz, surge on-state current  
Peak gate power dissipation  
Average gate power dissipation  
Peak gate forward voltage  
Peak gate reverse voltage  
Peak gate forward current  
Junction temperature  
Storage temperature  
PGM  
PG (AV)  
VFGM  
VRGM  
IFGM  
Tj  
5
W
W
V
0.5  
6
10  
2
V
A
– 40 to +150  
– 40 to +150  
2.0  
°C  
°C  
g
Tstg  
Mass  
Typical value  
Electrical Characteristics  
Parameter  
Symbol  
Min.  
Typ.  
Max.  
2.0/5.0  
2.0/5.0  
1.6  
Unit  
mA  
mA  
V
Test conditions  
Repetitive peak reverse current  
Repetitive peak off-state current  
On-state voltage  
IRRM  
IDRM  
VTM  
Tj = 125°C/150°C, VRRM applied  
Tj = 125°C/150°C, VDRM applied  
Tc = 25°C, ITM = 40 A,  
instantaneous value  
VGT  
VGD  
1.5  
V
V
Tj = 25°C, VD = 6 V, IT = 1 A  
Gate trigger voltage  
Gate non-trigger voltage  
0.2/0.1  
Tj = 125°C/150°C,  
VD = 1/2 VDRM  
Gate trigger current  
Holding current  
IGT  
IH  
15  
30  
mA  
mA  
Tj = 25°C, VD = 6 V, IT = 1 A  
Tj = 25°C, VD = 12 V  
°C/W Junction to caseNote1 Note2  
Thermal resistance  
Rth (j-c)  
1.2  
Notes: 1. The contact thermal resistance Rth (c-f) in case of greasing is 1.0°C/W.  
2. Case temperature is measured at anode tab 1.5 mm away from the molded case.  
R07DS0232EJ0100 Rev.1.00  
Dec 20, 2010  
Page 2 of 7  
CR12CM-12B  
Preliminary  
Performance Curves  
Maximum On-State Characteristics  
Rated Surge On-State Current  
103  
102  
400  
320  
240  
Tc = 2C  
160  
80  
0
101  
100  
100  
101  
102  
0.8  
1.2  
1.6  
2.0  
2.4  
2.8  
3.2  
On-State Voltage (V)  
Conduction Time (Cycles at 60Hz)  
Gate Trigger Current vs.  
Junction Temperature  
Gate Characteristics  
102  
103  
Typical Example  
PGM = 5 W  
VFGM = 6 V  
101  
100  
102  
101  
VGT = 1.5 V  
P
G(AV) =  
0.5 W  
IFGM  
= 2 A  
IGT = 30 mA  
101  
102  
VGD = 0.1 V  
100  
101  
102  
103  
104  
40  
160  
0
40  
80  
120  
Gate Current (mA)  
Junction Temperature (°C)  
Gate Trigger Voltage vs.  
Junction Temperature  
Maximum Transient Thermal Impedance  
Characteristics (Junction to case)  
101  
103  
102  
Typical Example  
100  
10-1  
10-2  
101  
100  
10-4  
10-3  
10-2  
10-1  
–40  
0
40  
80  
120  
160  
Junction Temperature (°C)  
Time (s)  
R07DS0232EJ0100 Rev.1.00  
Dec 20, 2010  
Page 3 of 7  
CR12CM-12B  
Preliminary  
Allowable Case Temperature vs.  
Maximum Average Power Dissipation  
(Single-Phase Half Wave)  
Average On-State Current  
(Single-Phase Half Wave)  
160  
140  
120  
100  
80  
64  
56  
48  
40  
32  
24  
16  
6
θ
θ
360  
°
360  
°
180°  
120°  
90°  
Resistive,  
inductive loads  
Resistive,  
inductive loads  
60°  
60  
θ = 30°  
60° 120°  
40  
θ = 30° 90° 180°  
20  
0
0
0
3
6
9
12 15 18 21 24  
0
4
8
12 16 20 24 28 32  
Average On-State Current (A)  
Average On-State Current (A)  
Allowable Ambient Temperature vs.  
Average On-State Current  
Maximum Average Power Dissipation  
(Single-Phase Full Wave)  
(Single-Phase Half Wave)  
160  
140  
120  
100  
80  
64  
56  
48  
40  
32  
24  
16  
8
Resistive,  
inductive loads  
θ
Natural  
convection  
180°  
120°  
360  
°
90°  
60°  
120°  
θ = 30°  
θ = 30°  
180°  
60°  
60  
90°  
40  
θ
θ
360  
°
20  
Resistive loads  
0
0
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6  
Average On-State Current (A)  
0
4
8
12 16 20 24 28 32  
Average On-State Current (A)  
Allowable Case Temperature vs.  
Average On-State Current  
(Single-Phase Full Wave)  
Allowable Ambient Temperature vs.  
Average On-State Current  
(Single-Phase Full Wave)  
160  
140  
120  
100  
80  
160  
140  
120  
100  
80  
Resistive loads  
Natural convection  
θ
θ
θ
θ
360  
°
360°  
Resistive loads  
180°  
120°  
θ = 30°  
60°  
60  
60  
60° 120°  
90° 180°  
90°  
40  
40  
θ = 30°  
20  
20  
0
0
0
4
8
12 16 20 24 28 32  
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6  
Average On-State Current (A)  
Average On-State Current (A)  
R07DS0232EJ0100 Rev.1.00  
Dec 20, 2010  
Page 4 of 7  
CR12CM-12B  
Preliminary  
Allowable Case Temperature vs.  
Maximum Average Power Dissipation  
(Rectangular Wave)  
Average On-State Current  
(Rectangular Wave)  
64  
160  
140  
120  
100  
80  
56  
48  
40  
32  
24  
16  
8
θ
θ
360°  
360°  
Resistive,  
inductive  
loads  
Resistive,  
inductive loads  
270°  
DC  
180°  
120°  
90°  
60°  
60  
θ = 30° 90° 180°  
270°  
DC  
θ = 30°  
60° 120°  
40  
20  
0
0
0
4
8
12 16 20 24 28 32  
0
4
8
12 16 20 24 28 32  
Average On-State Current (A)  
Average On-State Current (A)  
Allowable Ambient Temperature vs.  
Average On-State Current  
(Rectangular Wave)  
Breakover Voltage vs.  
Junction Temperature  
103  
102  
101  
160  
140  
120  
100  
80  
Typical Example  
Resistive,  
inductive loads  
Natural convection  
θ
360°  
DC  
270  
°
θ = 30  
°
180  
°
60  
60  
°
90  
°
40  
120  
°
20  
0
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6  
Average On-State Current (A)  
–40  
0
40  
80  
120  
160  
Junction Temperature (°C)  
Breakover Voltage vs.  
Rate of Rise of Off-State Voltage  
Breakover Voltage vs.  
Rate of Rise of Off-State Voltage  
160  
140  
120  
100  
80  
160  
140  
120  
100  
80  
Typical Example  
Tj = 12C  
Typical Example  
Tj = 150°C  
60  
60  
40  
40  
20  
20  
0
0
101  
102  
103  
104  
101  
102  
103  
104  
Rate of Rise of Off-State Voltage (V/μs)  
Rate of Rise of Off-State Voltage (V/μs)  
R07DS0232EJ0100 Rev.1.00  
Dec 20, 2010  
Page 5 of 7  
CR12CM-12B  
Preliminary  
Holding Current vs.  
Junction Temperature  
Repetitive Peak Reverse Voltage vs.  
Junction Temperature  
160  
103  
102  
101  
Typical Example  
Typical Example  
140  
120  
100  
80  
60  
40  
20  
0
–40  
0
40  
80  
120  
160  
0
40  
80  
120  
160  
Junction Temperature (°C)  
Junction Temperature (°C)  
Gate Trigger Current vs.  
Gate Current Pulse Width  
103  
102  
101  
Typical Example  
101  
100  
101  
102  
Gate Current Pulse Width (μs)  
R07DS0232EJ0100 Rev.1.00  
Dec 20, 2010  
Page 6 of 7  
CR12CM-12B  
Preliminary  
Package Dimensions  
Package Name  
TO-220  
JEITA Package Code  
SC-46  
RENESAS Code  
PRSS0004AA-A  
Previous Code  
MASS[Typ.]  
T220AB  
2.0g  
Unit: mm  
10.5Max  
4.5  
1.3  
φ3.6  
1.0  
0.8  
0.5  
2.6  
2.54  
2.54  
Ordering Information  
Orderable Part Number  
CR12CM-12B#B00  
Packing  
Quantity  
100 pcs. Straight type  
50 pcs. A8 Lead form  
Remark  
Bag  
Tube  
CR12CM-12B-A8#B00  
Note : Please confirm the specification about the shipping in detail.  
R07DS0232EJ0100 Rev.1.00  
Dec 20, 2010  
Page 7 of 7  
Notice  
1. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas  
Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular and careful attention to additional and different information to  
be disclosed by Renesas Electronics such as that disclosed through our website.  
2. Renesas Electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property rights of third parties by or arising from the use of Renesas Electronics products or  
technical information described in this document. No license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights of Renesas Electronics or  
others.  
3. You should not alter, modify, copy, or otherwise misappropriate any Renesas Electronics product, whether in whole or in part.  
4. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for  
the incorporation of these circuits, software, and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the  
use of these circuits, software, or information.  
5. When exporting the products or technology described in this document, you should comply with the applicable export control laws and regulations and follow the procedures required by such laws and  
regulations. You should not use Renesas Electronics products or the technology described in this document for any purpose relating to military applications or use by the military, including but not limited to  
the development of weapons of mass destruction. Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is  
prohibited under any applicable domestic or foreign laws or regulations.  
6. Renesas Electronics has used reasonable care in preparing the information included in this document, but Renesas Electronics does not warrant that such information is error free. Renesas Electronics  
assumes no liability whatsoever for any damages incurred by you resulting from errors in or omissions from the information included herein.  
7. Renesas Electronics products are classified according to the following three quality grades: "Standard", "High Quality", and "Specific". The recommended applications for each Renesas Electronics product  
depends on the product's quality grade, as indicated below. You must check the quality grade of each Renesas Electronics product before using it in a particular application. You may not use any Renesas  
Electronics product for any application categorized as "Specific" without the prior written consent of Renesas Electronics. Further, you may not use any Renesas Electronics product for any application for  
which it is not intended without the prior written consent of Renesas Electronics. Renesas Electronics shall not be in any way liable for any damages or losses incurred by you or third parties arising from the  
use of any Renesas Electronics product for an application categorized as "Specific" or for which the product is not intended where you have failed to obtain the prior written consent of Renesas Electronics.  
The quality grade of each Renesas Electronics product is "Standard" unless otherwise expressly specified in a Renesas Electronics data sheets or data books, etc.  
"Standard":  
Computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools;  
personal electronic equipment; and industrial robots.  
"High Quality": Transportation equipment (automobiles, trains, ships, etc.); traffic control systems; anti-disaster systems; anti-crime systems; safety equipment; and medical equipment not specifically  
designed for life support.  
"Specific":  
Aircraft; aerospace equipment; submersible repeaters; nuclear reactor control systems; medical equipment or systems for life support (e.g. artificial life support devices or systems), surgical  
implantations, or healthcare intervention (e.g. excision, etc.), and any other applications or purposes that pose a direct threat to human life.  
8. You should use the Renesas Electronics products described in this document within the range specified by Renesas Electronics, especially with respect to the maximum rating, operating supply voltage  
range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. Renesas Electronics shall have no liability for malfunctions or damages arising out of the  
use of Renesas Electronics products beyond such specified ranges.  
9. Although Renesas Electronics endeavors to improve the quality and reliability of its products, semiconductor products have specific characteristics such as the occurrence of failure at a certain rate and  
malfunctions under certain use conditions. Further, Renesas Electronics products are not subject to radiation resistance design. Please be sure to implement safety measures to guard them against the  
possibility of physical injury, and injury or damage caused by fire in the event of the failure of a Renesas Electronics product, such as safety design for hardware and software including but not limited to  
redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. Because the evaluation of microcomputer software alone is very difficult,  
please evaluate the safety of the final products or system manufactured by you.  
10. Please contact a Renesas Electronics sales office for details as to environmental matters such as the environmental compatibility of each Renesas Electronics product. Please use Renesas Electronics  
products in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. Renesas Electronics assumes  
no liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations.  
11. This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written consent of Renesas Electronics.  
12. Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this document or Renesas Electronics products, or if you have any other inquiries.  
(Note 1) "Renesas Electronics" as used in this document means Renesas Electronics Corporation and also includes its majority-owned subsidiaries.  
(Note 2) "Renesas Electronics product(s)" means any product developed or manufactured by or for Renesas Electronics.  
SALES OFFICES  
http://www.renesas.com  
Refer to "http://www.renesas.com/" for the latest and detailed information.  
Renesas Electronics America Inc.  
2880 Scott Boulevard Santa Clara, CA 95050-2554, U.S.A.  
Tel: +1-408-588-6000, Fax: +1-408-588-6130  
Renesas Electronics Canada Limited  
1101 Nicholson Road, Newmarket, Ontario L3Y 9C3, Canada  
Tel: +1-905-898-5441, Fax: +1-905-898-3220  
Renesas Electronics Europe Limited  
Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K  
Tel: +44-1628-585-100, Fax: +44-1628-585-900  
Renesas Electronics Europe GmbH  
Arcadiastrasse 10, 40472 Düsseldorf, Germany  
Tel: +49-211-65030, Fax: +49-211-6503-1327  
Renesas Electronics (China) Co., Ltd.  
7th Floor, Quantum Plaza, No.27 ZhiChunLu Haidian District, Beijing 100083, P.R.China  
Tel: +86-10-8235-1155, Fax: +86-10-8235-7679  
Renesas Electronics (Shanghai) Co., Ltd.  
Unit 204, 205, AZIA Center, No.1233 Lujiazui Ring Rd., Pudong District, Shanghai 200120, China  
Tel: +86-21-5877-1818, Fax: +86-21-6887-7858 / -7898  
Renesas Electronics Hong Kong Limited  
Unit 1601-1613, 16/F., Tower 2, Grand Century Place, 193 Prince Edward Road West, Mongkok, Kowloon, Hong Kong  
Tel: +852-2886-9318, Fax: +852 2886-9022/9044  
Renesas Electronics Taiwan Co., Ltd.  
7F, No. 363 Fu Shing North Road Taipei, Taiwan  
Tel: +886-2-8175-9600, Fax: +886 2-8175-9670  
Renesas Electronics Singapore Pte. Ltd.  
1 harbourFront Avenue, #06-10, keppel Bay Tower, Singapore 098632  
Tel: +65-6213-0200, Fax: +65-6278-8001  
Renesas Electronics Malaysia Sdn.Bhd.  
Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No. 18, Jln Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia  
Tel: +60-3-7955-9390, Fax: +60-3-7955-9510  
Renesas Electronics Korea Co., Ltd.  
11F., Samik Lavied' or Bldg., 720-2 Yeoksam-Dong, Kangnam-Ku, Seoul 135-080, Korea  
Tel: +82-2-558-3737, Fax: +82-2-558-5141  
© 2010 Renesas Electronics Corporation. All rights reserved.  
Colophon 1.0  

CR12CM-12B#BH0 相关器件

型号 制造商 描述 价格 文档
CR12CM-12B-A8 RENESAS Thyristor Medium Power Use 获取价格
CR12CM-12B-A8B00 RENESAS Thyristor Medium Power Use 获取价格
CR12CM-12BB00 RENESAS Thyristor Medium Power Use 获取价格
CR12CM-12B_13 RENESAS Thyristor Medium Power Use 获取价格
CR12CS-16B RENESAS Thyristor Medium Power Use 获取价格
CR12CS-16B#B00 RENESAS 800V-12A-Thyristor Medium Power Use 获取价格
CR12CS-16B#BH0 RENESAS 800V-12A-Thyristor Medium Power Use 获取价格
CR12CS-16B-A1#B00 RENESAS 800V-12A-Thyristor Medium Power Use 获取价格
CR12CS-16B-A1#BH0 RENESAS 800V-12A-Thyristor Medium Power Use 获取价格
CR12CS-16B-A1-B00 RENESAS Thyristor Medium Power Use 获取价格

CR12CM-12B#BH0 相关文章

  • 苹果Apple Intelligence适配百度AI模型遇技术挑战
    2024-12-05
    12
  • 苹果携手亚马逊,定制AI芯片助力Apple Intelligence模型训练
    2024-12-05
    10
  • 革命性突破:光衍射极限下微型步行机器人成功面世
    2024-12-05
    12
  • Soitec将为格罗方德9SW平台供应300mm RF-SOI晶圆
    2024-12-05
    11