CR12CM-12B#BH0 概述
600V - 12A - Thyristor Medium Power Use
CR12CM-12B#BH0 数据手册
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PDF下载Preliminary Datasheet
CR12CM-12B
R07DS0232EJ0100
Rev.1.00
Thyristor
Medium Power Use
Dec 20, 2010
Features
IT (AV) : 12 A
DRM : 600 V
GT : 30 mA
The product guaranteed maximum junction
temperature of 150°C
Non-Insulated Type
Planar Passivation Type
V
I
Outline
RENESAS Package code: PRSS0004AA-A
(Package name: TO-220)
4
2, 4
1. Cathode
2. Anode
3. Gate
4. Anode
3
1
1
2
3
Applications
Switching mode power supply, regulator for autocycle, motor control, heater control, and other general purpose control
applications
Maximum Ratings
Voltage class
Parameter
Symbol
Unit
12
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
VRRM
VRSM
600
720
480
600
480
V
V
V
V
V
VR (DC)
VDRM
Repetitive peak off-state voltage
DC off-state voltage
VD (DC)
R07DS0232EJ0100 Rev.1.00
Dec 20, 2010
Page 1 of 7
CR12CM-12B
Preliminary
Parameter
Symbol
IT (RMS)
IT (AV)
Ratings
18.8
Unit
A
Conditions
RMS on-state current
Average on-state current
12
A
Commercial frequency, sine half wave
180° conduction, Tc = 116°CNote2
Surge on-state current
I2t for fusing
ITSM
I2t
360
544
A
60Hz sine half wave 1 full cycle,
peak value, non-repetitive
A2s
Value corresponding to 1 cycle of half
wave 60Hz, surge on-state current
Peak gate power dissipation
Average gate power dissipation
Peak gate forward voltage
Peak gate reverse voltage
Peak gate forward current
Junction temperature
Storage temperature
PGM
PG (AV)
VFGM
VRGM
IFGM
Tj
5
W
W
V
0.5
6
10
2
V
A
– 40 to +150
– 40 to +150
2.0
°C
°C
g
Tstg
—
Mass
Typical value
Electrical Characteristics
Parameter
Symbol
Min.
Typ.
—
Max.
2.0/5.0
2.0/5.0
1.6
Unit
mA
mA
V
Test conditions
Repetitive peak reverse current
Repetitive peak off-state current
On-state voltage
IRRM
IDRM
VTM
—
—
—
Tj = 125°C/150°C, VRRM applied
Tj = 125°C/150°C, VDRM applied
—
—
Tc = 25°C, ITM = 40 A,
instantaneous value
VGT
VGD
—
—
—
1.5
—
V
V
Tj = 25°C, VD = 6 V, IT = 1 A
Gate trigger voltage
Gate non-trigger voltage
0.2/0.1
Tj = 125°C/150°C,
VD = 1/2 VDRM
Gate trigger current
Holding current
IGT
IH
—
—
—
—
15
—
30
—
mA
mA
Tj = 25°C, VD = 6 V, IT = 1 A
Tj = 25°C, VD = 12 V
°C/W Junction to caseNote1 Note2
Thermal resistance
Rth (j-c)
1.2
Notes: 1. The contact thermal resistance Rth (c-f) in case of greasing is 1.0°C/W.
2. Case temperature is measured at anode tab 1.5 mm away from the molded case.
R07DS0232EJ0100 Rev.1.00
Dec 20, 2010
Page 2 of 7
CR12CM-12B
Preliminary
Performance Curves
Maximum On-State Characteristics
Rated Surge On-State Current
103
102
400
320
240
Tc = 25°C
160
80
0
101
100
100
101
102
0.8
1.2
1.6
2.0
2.4
2.8
3.2
On-State Voltage (V)
Conduction Time (Cycles at 60Hz)
Gate Trigger Current vs.
Junction Temperature
Gate Characteristics
102
103
Typical Example
PGM = 5 W
VFGM = 6 V
101
100
102
101
VGT = 1.5 V
P
G(AV) =
0.5 W
IFGM
= 2 A
IGT = 30 mA
10–1
10–2
VGD = 0.1 V
100
101
102
103
104
–
40
160
0
40
80
120
Gate Current (mA)
Junction Temperature (°C)
Gate Trigger Voltage vs.
Junction Temperature
Maximum Transient Thermal Impedance
Characteristics (Junction to case)
101
103
102
Typical Example
100
10-1
10-2
101
100
10-4
10-3
10-2
10-1
–40
0
40
80
120
160
Junction Temperature (°C)
Time (s)
R07DS0232EJ0100 Rev.1.00
Dec 20, 2010
Page 3 of 7
CR12CM-12B
Preliminary
Allowable Case Temperature vs.
Maximum Average Power Dissipation
(Single-Phase Half Wave)
Average On-State Current
(Single-Phase Half Wave)
160
140
120
100
80
64
56
48
40
32
24
16
6
θ
θ
360
°
360
°
180°
120°
90°
Resistive,
inductive loads
Resistive,
inductive loads
60°
60
θ = 30°
60° 120°
40
θ = 30° 90° 180°
20
0
0
0
3
6
9
12 15 18 21 24
0
4
8
12 16 20 24 28 32
Average On-State Current (A)
Average On-State Current (A)
Allowable Ambient Temperature vs.
Average On-State Current
Maximum Average Power Dissipation
(Single-Phase Full Wave)
(Single-Phase Half Wave)
160
140
120
100
80
64
56
48
40
32
24
16
8
Resistive,
inductive loads
θ
Natural
convection
180°
120°
360
°
90°
60°
120°
θ = 30°
θ = 30°
180°
60°
60
90°
40
θ
θ
360
°
20
Resistive loads
0
0
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Average On-State Current (A)
0
4
8
12 16 20 24 28 32
Average On-State Current (A)
Allowable Case Temperature vs.
Average On-State Current
(Single-Phase Full Wave)
Allowable Ambient Temperature vs.
Average On-State Current
(Single-Phase Full Wave)
160
140
120
100
80
160
140
120
100
80
Resistive loads
Natural convection
θ
θ
θ
θ
360
°
360°
Resistive loads
180°
120°
θ = 30°
60°
60
60
60° 120°
90° 180°
90°
40
40
θ = 30°
20
20
0
0
0
4
8
12 16 20 24 28 32
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Average On-State Current (A)
Average On-State Current (A)
R07DS0232EJ0100 Rev.1.00
Dec 20, 2010
Page 4 of 7
CR12CM-12B
Preliminary
Allowable Case Temperature vs.
Maximum Average Power Dissipation
(Rectangular Wave)
Average On-State Current
(Rectangular Wave)
64
160
140
120
100
80
56
48
40
32
24
16
8
θ
θ
360°
360°
Resistive,
inductive
loads
Resistive,
inductive loads
270°
DC
180°
120°
90°
60°
60
θ = 30° 90° 180°
270°
DC
θ = 30°
60° 120°
40
20
0
0
0
4
8
12 16 20 24 28 32
0
4
8
12 16 20 24 28 32
Average On-State Current (A)
Average On-State Current (A)
Allowable Ambient Temperature vs.
Average On-State Current
(Rectangular Wave)
Breakover Voltage vs.
Junction Temperature
103
102
101
160
140
120
100
80
Typical Example
Resistive,
inductive loads
Natural convection
θ
360°
DC
270
°
θ = 30
°
180
°
60
60
°
90
°
40
120
°
20
0
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Average On-State Current (A)
–40
0
40
80
120
160
Junction Temperature (°C)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage
Breakover Voltage vs.
Rate of Rise of Off-State Voltage
160
140
120
100
80
160
140
120
100
80
Typical Example
Tj = 125°C
Typical Example
Tj = 150°C
60
60
40
40
20
20
0
0
101
102
103
104
101
102
103
104
Rate of Rise of Off-State Voltage (V/μs)
Rate of Rise of Off-State Voltage (V/μs)
R07DS0232EJ0100 Rev.1.00
Dec 20, 2010
Page 5 of 7
CR12CM-12B
Preliminary
Holding Current vs.
Junction Temperature
Repetitive Peak Reverse Voltage vs.
Junction Temperature
160
103
102
101
Typical Example
Typical Example
140
120
100
80
60
40
20
0
–40
0
40
80
120
160
0
40
80
120
160
Junction Temperature (°C)
Junction Temperature (°C)
Gate Trigger Current vs.
Gate Current Pulse Width
103
102
101
Typical Example
10−1
100
101
102
Gate Current Pulse Width (μs)
R07DS0232EJ0100 Rev.1.00
Dec 20, 2010
Page 6 of 7
CR12CM-12B
Preliminary
Package Dimensions
Package Name
TO-220
JEITA Package Code
SC-46
RENESAS Code
PRSS0004AA-A
Previous Code
MASS[Typ.]
T220AB
2.0g
Unit: mm
10.5Max
4.5
1.3
φ3.6
1.0
0.8
0.5
2.6
2.54
2.54
Ordering Information
Orderable Part Number
CR12CM-12B#B00
Packing
Quantity
100 pcs. Straight type
50 pcs. A8 Lead form
Remark
Bag
Tube
CR12CM-12B-A8#B00
Note : Please confirm the specification about the shipping in detail.
R07DS0232EJ0100 Rev.1.00
Dec 20, 2010
Page 7 of 7
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Colophon 1.0
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