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QS8J12TR

更新时间：2025-06-17 18:10:05
品牌：ROHM
描述：Small Signal Field-Effect Transistor, 4.5A I(D), 12V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, TSMT8, 8 PIN

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QS8J12TR 概述

Small Signal Field-Effect Transistor, 4.5A I(D), 12V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, TSMT8, 8 PIN 小信号场效应晶体管

QS8J12TR 规格参数

生命周期：Active包装说明：SMALL OUTLINE, R-PDSO-F8
Reach Compliance Code：compliant风险等级：5.7
配置：SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE最小漏源击穿电压：12 V
最大漏极电流 (ID)：4.5 A最大漏源导通电阻：0.029 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJESD-30 代码：R-PDSO-F8
元件数量：2端子数量：8
工作模式：ENHANCEMENT MODE封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
极性/信道类型：P-CHANNEL表面贴装：YES
端子形式：FLAT端子位置：DUAL
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

QS8J12TR 数据手册

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QS8J12  
Pch -12V -4.5A Power MOSFET  
Datasheet  
lOutline  
(8)  
VDSS  
(7)  
-12V  
TSMT8  
(6)  
(5)  
RDS(on) (Max.)  
29mW  
-4.5A  
1.5W  
(1)  
(2)  
(3)  
ID  
PD  
(4)  
lFeatures  
lInner circuit  
1) Low on - resistance.  
(1) Tr1 Source (5) Tr2 Drain  
(2) Tr1 Gate (6) Tr2 Drain  
(3) Tr2 Source (7) Tr1 Drain  
(4) Tr2 Gate (8) Tr1 Drain  
2) -1.5V Drive.  
3) Built-in G-S Protection Diode.  
4) Small Surface Mount Package (TSMT8).  
5) Pb-free lead plating ; RoHS compliant  
*1 ESD PROTECTION DIODE  
*2 BODY DIODE  
lPackaging specifications  
Packaging  
Taping  
180  
8
Reel size (mm)  
lApplication  
Tape width (mm)  
Type  
DC/DC converters  
Basic ordering unit (pcs)  
3,000  
TR  
Taping code  
Marking  
J12  
lAbsolute maximum ratings(Ta = 25°C) <It is the same ratings for the Tr1 and Tr2>  
Parameter  
Drain - Source voltage  
Symbol  
VDSS  
Value  
-12  
Unit  
V
*1  
Continuous drain current  
Pulsed drain current  
A
ID  
4.5  
*2  
A
V
ID,pulse  
18  
VGSS  
Gate - Source voltage  
0 to -8  
1.5  
W / total  
W / element  
W / total  
°C  
*3  
PD  
Power dissipation  
1.25  
*4  
0.55  
PD  
Tj  
Junction temperature  
150  
Tstg  
Range of storage temperature  
°C  
-55 to +150  
www.rohm.com  
© 2012 ROHM Co., Ltd. All rights reserved.  
2012.10 - Rev.B  
1/11  
Data Sheet  
QS8J12  
lThermal resistance  
Values  
Parameter  
Symbol  
Unit  
Min.  
Typ.  
Max.  
*3  
-
-
-
-
83.3  
227  
°C/W  
°C/W  
RthJA  
Thermal resistance, junction - ambient  
*4  
RthJA  
lElectrical characteristics(Ta = 25°C)  
<It is the same characteristics for the Tr1 and Tr2>  
Values  
Typ.  
Parameter  
Symbol  
V(BR)DSS  
Conditions  
Unit  
V
Min.  
Max.  
-
Drain - Source breakdown  
voltage  
VGS = 0V, ID = -1mA  
-
-12  
ΔV(BR)DSS  
ΔTj  
ID= -1mA  
referenced to 25°C  
Breakdown voltage  
temperature coefficient  
-
-
mV/°C  
-12  
IDSS  
IGSS  
VDS = -12V, VGS = 0V  
VGS = -8V, VDS = 0V  
VDS = -6V, ID = -1mA  
Zero gate voltage drain current  
Gate - Source leakage current  
Gate threshold voltage  
-
-
-
-
-
-10  
-10  
-1.0  
mA  
mA  
V
VGS (th)  
-0.3  
ΔV(GS)th  
ΔTj  
ID= -1mA  
referenced to 25°C  
Gate threshold voltage  
temperature coefficient  
-
2.6  
-
mV/°C  
VGS= -4.5V, ID= -4.5A  
VGS= -2.5V, ID= -2.2A  
VGS= -1.8V, ID= -2.2A  
VGS= -1.5V, ID= -0.9A  
VGS= -4.5V, ID= -4.5A, Tj=125°C  
f = 1MHz, open drain  
VDS= -6V, ID= -4.5A  
-
21  
27  
29  
38  
55  
98  
48  
-
-
Static drain - source  
on - state resistance  
*5  
-
37  
RDS(on)  
mW  
-
-
49  
34  
RG  
Gate input resistannce  
Transconductance  
-
20  
W
*5  
5.5  
12.0  
-
S
gfs  
*1 Limited only by maximum temperature allowed.  
*2 Pw 10ms, Duty cycle 1%  
*3 Mounted on a ceramic board (30×30×0.8mm)  
*4 Mounted on a FR4 (20×20×0.8mm)  
*5 Pulsed  
www.rohm.com  
© 2012 ROHM Co., Ltd. All rights reserved.  
2012.10 - Rev.B  
2/11  
Data Sheet  
QS8J12  
lElectrical characteristics(Ta = 25°C)  
<It is the same characteristics for the Tr1 and Tr2>  
Values  
Typ.  
4200  
350  
330  
16  
Parameter  
Symbol  
Conditions  
VGS = 0V  
Unit  
Min.  
Max.  
Ciss  
Coss  
Crss  
Input capacitance  
-
-
-
-
-
-
-
-
-
-
-
-
-
-
VDS = -6V  
Output capacitance  
Reverse transfer capacitance  
Turn - on delay time  
Rise time  
pF  
ns  
f = 1MHz  
*5  
V
DD ⋍ -6V, VGS = -4.5V  
td(on)  
*5  
ID = -2.2A  
RL = 2.7W  
RG = 10W  
60  
tr  
*5  
Turn - off delay time  
Fall time  
400  
150  
td(off)  
*5  
tf  
lGate Charge characteristics(Ta = 25°C)  
<It is the same characteristics for the Tr1 and Tr2>  
Values  
Typ.  
40  
Parameter  
Symbol  
Conditions  
Unit  
nC  
Min.  
Max.  
*5  
Total gate charge  
-
-
-
-
-
-
Qg  
V
DD ⋍ -6V, ID= -4.5A  
VGS = -4.5V  
*5  
Gate - Source charge  
Gate - Drain charge  
6.5  
Qgs  
*5  
6.0  
Qgd  
lBody diode electrical characteristics (Source-Drain)(Ta = 25°C)  
<It is the same characteristics for the Tr1 and Tr2>  
Values  
Typ.  
Parameter  
Symbol  
Conditions  
Unit  
Min.  
Max.  
-1  
Inverse diode continuous,  
forward current  
*1  
Ta = 25°C  
-
-
-
-
A
V
IS  
*5  
VGS = 0V, Is = -4.5A  
Forward voltage  
VSD  
-1.2  
www.rohm.com  
© 2012 ROHM Co., Ltd. All rights reserved.  
2012.10 - Rev.B  
3/11  
Data Sheet  
QS8J12  
lElectrical characteristic curves  
Fig.2 Maximum Safe Operating Area  
Fig.1 Power Dissipation Derating Curve  
120  
100  
80  
60  
40  
20  
0
100  
Operation in this area  
is limited by RDS(on)  
(VGS = -4.5V)  
PW = 100ms  
10  
PW = 1ms  
PW = 10ms  
1
DC Operation  
0.1  
0.01  
Ta=25ºC  
Single Pulse  
Mounted on a ceramic board.  
(30mm × 30mm × 0.8mm)  
0
50  
100  
150  
200  
0.1  
1
10  
100  
Drain - Source Voltage : -VDS [V]  
Junction Temperature : Tj [°C]  
Fig.3 Normalized Transient Thermal  
Resistance vs. Pulse Width  
Fig.4 Single Pulse Maximum  
Power dissipation  
10  
1000  
100  
10  
Ta=25ºC  
Single Pulse  
Ta=25ºC  
Single Pulse  
1
top D = 1  
D = 0.5  
D = 0.1  
D = 0.05  
0.1  
0.01  
D = 0.01  
bottom Single  
Rth(ch-a)=100ºC/W  
Rth(ch-a)(t)=r(t)×Rth(ch-a)  
Mounted on ceramic board  
(30mm × 30mm × 0.8mm)  
0.001  
1
0.0001  
0.01  
1
100  
0.0001  
0.01  
1
100  
Pulse Width : PW [s]  
Pulse Width : PW [s]  
www.rohm.com  
© 2012 ROHM Co., Ltd. All rights reserved.  
2012.10 - Rev.B  
4/11  
Data Sheet  
QS8J12  
lElectrical characteristic curves  
Fig.6 Typical Output Characteristics(II)  
Fig.5 Typical Output Characteristics(I)  
4.5  
4
4.5  
Ta=25ºC  
Pulsed  
Ta=25ºC  
Pulsed  
4
VGS= -4.5V  
VGS= -4.0V  
VGS= -2.5V  
VGS= -4.5V  
3.5  
3
3.5  
VGS= -4.0V  
VGS= -2.5V  
3
VGS= -1.2V  
VGS= -2.0V  
2.5  
2
2.5  
VGS= -1.8V  
2
VGS= -1.5V  
VGS= -2.0V  
VGS= -1.8V  
VGS= -1.5V  
VGS= -1.2V  
1.5  
1
1.5  
1
VGS= -1.0V  
0.5  
0
0.5  
0
VGS= -1.0V  
0
2
4
6
8
10  
0
0.2  
0.4  
0.6  
0.8  
1
Drain - Source Voltage : -VDS [V]  
Drain - Source Voltage : -VDS [V]  
Fig.7 Breakdown Voltage  
vs. Junction Temperature  
Fig.8 Typical Transfer Characteristics  
60  
40  
20  
0
10  
VDS= -6V  
VGS = 0V  
ID = -1mA  
Pulsed  
Pulsed  
1
Ta= 125ºC  
Ta= 75ºC  
Ta= 25ºC  
0.1  
Ta= -25ºC  
0.01  
0.001  
0
0.5  
1
1.5  
2
-50  
0
50  
100  
150  
Junction Temperature : Tj [°C]  
Gate - Source Voltage : -VGS [V]  
www.rohm.com  
© 2012 ROHM Co., Ltd. All rights reserved.  
2012.10 - Rev.B  
5/11  
Data Sheet  
QS8J12  
lElectrical characteristic curves  
Fig.9 Gate Threshold Voltage  
vs. Junction Temperature  
Fig.10 Transconductance vs. Drain Current  
3
100  
10  
1
VDS= -6V  
Pulsed  
VDS = -10V  
ID = -1mA  
Pulsed  
2
1
0
Ta= -25ºC  
Ta=25ºC  
Ta=75ºC  
Ta=125ºC  
0.1  
0.1  
1
10  
-50  
0
50  
100  
150  
Junction Temperature : Tj [°C]  
Drain Current : -ID [A]  
Fig.11 Drain CurrentDerating Curve  
Fig.12 Static Drain - Source On - State  
Resistance vs. Gate Source Voltage  
1.2  
100  
80  
60  
40  
20  
0
Ta=25ºC  
Pulsed  
1
0.8  
0.6  
0.4  
0.2  
0
ID = -4.5A  
ID = -0.9A  
-25  
0
25  
50  
75 100 125 150  
0
2
4
6
8
Gate - Source Voltage : -VGS [V]  
Junction Temperature : Tj [ºC]  
www.rohm.com  
© 2012 ROHM Co., Ltd. All rights reserved.  
2012.10 - Rev.B  
6/11  
Data Sheet  
QS8J12  
lElectrical characteristic curves  
Fig.13 Static Drain - Source On - State  
Resistance vs. Drain Current(I)  
Fig.14 Static Drain - Source On - State  
Resistance vs. Junction Temperature  
100  
40  
35  
30  
25  
20  
15  
10  
5
Ta=25ºC  
VGS= -1.5V  
Pulsed  
VGS= -1.8V  
VGS= -2.5V  
VGS= -4.5V  
VGS = -4.5V  
ID = -4.5A  
Pulsed  
10  
0
0.1  
1
10  
-50 -25  
0
25 50 75 100 125 150  
Drain Current : -ID [A]  
Junction Temperature : Tj [ºC]  
www.rohm.com  
© 2012 ROHM Co., Ltd. All rights reserved.  
2012.10 - Rev.B  
7/11  
Data Sheet  
QS8J12  
lElectrical characteristic curves  
Fig.15 Static Drain - Source On - State  
Resistance vs. Drain Current(II)  
Fig.16 Static Drain-Source On-State  
Resistance vs. Drain Current(III)  
100  
100  
VGS= -4.5V  
Pulsed  
VGS= -2.5V  
Pulsed  
Ta=125ºC  
Ta=75ºC  
Ta=25ºC  
Ta= -25ºC  
Ta=125ºC  
Ta=75ºC  
Ta=25ºC  
Ta= -25ºC  
10  
10  
0.1  
1
10  
0.1  
1
10  
Drain Current : -ID [A]  
Drain Current : -ID [A]  
Fig.17 Static Drain - Source On - State  
Fig.18 Static Drain - Source On - State  
Resistance vs. Drain Current(V)  
Resistance vs. Drain Current(IV)  
100  
100  
VGS= -1.5V  
Pulsed  
VGS= -1.8V  
Pulsed  
Ta=125ºC  
Ta=75ºC  
Ta=25ºC  
Ta= -25ºC  
Ta=125ºC  
Ta=75ºC  
Ta=25ºC  
Ta= -25ºC  
10  
10  
0.1  
1
10  
0.1  
1
10  
Drain Current : -ID [A]  
Drain Current : -ID [A]  
www.rohm.com  
© 2012 ROHM Co., Ltd. All rights reserved.  
2012.10 - Rev.B  
8/11  
Data Sheet  
QS8J12  
lElectrical characteristic curves  
Fig.19 Typical Capacitance  
vs. Drain - Source Voltage  
Fig.20 Switching Characteristics  
1000  
10000  
Ta = 25ºC  
VDD = -6V  
td(off)  
Ciss  
VGS = -4.5V  
RGS= 10W  
Pulsed  
tf  
1000  
100  
Coss  
tr  
td(on)  
Ta = 25ºC  
f = 1MHz  
VGS = 0V  
Crss  
100  
10  
0.01  
0.1  
1
10  
100  
0.01  
0.1  
1
10  
100  
Drain - Source Voltage : -VDS [V]  
Drain Current : -ID [A]  
Fig.22 Source Current  
vs. Source Drain Voltage  
Fig.21 Dynamic Input Characteristics  
10  
5
VGS=0V  
Pulsed  
4
3
2
1
0.1  
Ta=125ºC  
Ta=75ºC  
Ta=25ºC  
Ta= -25ºC  
Ta=25ºC  
VDD= -6V  
ID= -4.5A  
RG=10W  
Pulsed  
0.01  
0.001  
1
0
0
0.5  
1
1.5  
0
5
10 15 20 25 30 35 40 45 50  
Total Gate Charge : Qg [nC]  
Source-Drain Voltage : -VSD [V]  
www.rohm.com  
© 2012 ROHM Co., Ltd. All rights reserved.  
2012.10 - Rev.B  
9/11  
Data Sheet  
QS8J12  
lMeasurement circuits  
Fig.1-1 Switching Time Measurement Circuit  
Fig.1-2ꢀSwitching Waveforms  
Fig.2-1 Gate Charge Measurement Circuit  
Fig.2-2 Gate Charge Waveform  
www.rohm.com  
© 2012 ROHM Co., Ltd. All rights reserved.  
2012.10 - Rev.B  
10/11  
Data Sheet  
QS8J12  
lDimensions (Unit : mm)  
D
A
TSMT8  
c
e
e
b
x
S A  
S
y
S
b2  
Pattern of terminal position areas  
[Not a recommended pattern of soldering pads]  
MILIMETERS  
INCHES  
DIM  
MIN  
0.75  
0.00  
0.27  
0.12  
2.90  
2.30  
MAX  
0.85  
0.05  
0.37  
0.22  
3.10  
2.50  
MIN  
MAX  
0.033  
0.002  
0.015  
0.009  
0.122  
0.098  
A
A1  
b
0.030  
0.000  
0.011  
0.005  
0.114  
0.091  
c
D
E
e
0.65  
0.026  
HE  
L
2.70  
0.10  
0.10  
0.19  
0.19  
-
2.90  
0.30  
0.30  
0.39  
0.39  
0.10  
0.10  
0.106  
0.004  
0.004  
0.007  
0.007  
-
0.114  
0.012  
0.012  
0.015  
0.015  
0.004  
0.004  
L1  
Lp  
Lp1  
x
y
-
-
MILIMETERS  
INCHES  
0.095  
DIM  
MIN  
-
MAX  
0.47  
MIN  
-
MAX  
0.019  
b2  
e1  
l1  
2.41  
-
-
0.49  
0.49  
-
-
0.019  
0.019  
l2  
Dimension in mm / inches  
www.rohm.com  
© 2012 ROHM Co., Ltd. All rights reserved.  
2012.10 - Rev.B  
11/11  
Notice  
N o t e s  
No copying or reproduction of this document, in part or in whole, is permitted without the  
consent of ROHM Co.,Ltd.  
The content specified herein is subject to change for improvement without notice.  
The content specified herein is for the purpose of introducing ROHM's products (hereinafter  
"Products"). If you wish to use any such Product, please be sure to refer to the specifications,  
which can be obtained from ROHM upon request.  
Examples of application circuits, circuit constants and any other information contained herein  
illustrate the standard usage and operations of the Products. The peripheral conditions must  
be taken into account when designing circuits for mass production.  
Great care was taken in ensuring the accuracy of the information specified in this document.  
However, should you incur any damage arising from any inaccuracy or misprint of such  
information, ROHM shall bear no responsibility for such damage.  
The technical information specified herein is intended only to show the typical functions of and  
examples of application circuits for the Products. ROHM does not grant you, explicitly or  
implicitly, any license to use or exercise intellectual property or other rights held by ROHM and  
other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the  
use of such technical information.  
The Products specified in this document are intended to be used with general-use electronic  
equipment or devices (such as audio visual equipment, office-automation equipment, commu-  
nication devices, electronic appliances and amusement devices).  
The Products specified in this document are not designed to be radiation tolerant.  
While ROHM always makes efforts to enhance the quality and reliability of its Products, a  
Product may fail or malfunction for a variety of reasons.  
Please be sure to implement in your equipment using the Products safety measures to guard  
against the possibility of physical injury, fire or any other damage caused in the event of the  
failure of any Product, such as derating, redundancy, fire control and fail-safe designs. ROHM  
shall bear no responsibility whatsoever for your use of any Product outside of the prescribed  
scope or not in accordance with the instruction manual.  
The Products are not designed or manufactured to be used with any equipment, device or  
system which requires an extremely high level of reliability the failure or malfunction of which  
may result in a direct threat to human life or create a risk of human injury (such as a medical  
instrument, transportation equipment, aerospace machinery, nuclear-reactor controller, fuel-  
controller or other safety device). ROHM shall bear no responsibility in any way for use of any  
of the Products for the above special purposes. If a Product is intended to be used for any  
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obtain a license or permit under the Law.  
Thank you for your accessing to ROHM product informations.  
More detail product informations and catalogs are available, please contact us.  
ROHM Customer Support System  
http://www.rohm.com/contact/  
www.rohm.com  
© 2012 ROHM Co., Ltd. All rights reserved.  
R1120A  

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