RSX101M-30 概述
Shottky barrier diode 肖特基势垒二极管
RSX101M-30 数据手册
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Diodes
Shottky barrier diode
RSX101M-30
zExternal dimensions (Unit : mm)
zApplication
High efficient shottky barrier diode
Rectifier for power supply units
Battery protection against reversal current
CATHODE MARK
0.1
0.9 0.1
0.1
0.05
zFeatures
1) Small mold type. (PMDU (2616) )
2) High reliability.
(ESD resistance typ=12kV (machine model) )
3) Low VF / Low IR.
1.6 0.2
0.80 0.1
ROHM : PMDU
EIAJ : −
(VF=0.35V at 1A / IR=90µA at 30V)
JEDEC :
zStructure
Silicon Epitaxial Planer
zAbsolute maximum ratings (Ta=25°C)
Parameter
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Symbol
Limits
Unit
V
RM
30
V
V
VR
30
Average rectified forward current
Forward peak surge current (60Hz / 1cyc.)
Junction temperature
I
O
1
45
A
I
FSM
A
Tj
150
°C
°C
Storage temperature
Tstg
−40 to 150
zElectrical characteristics (Ta=25°C)
Parameter
Forward voltage
Symbol
Min.
−
−
−
−
Typ.
0.35
90
Max.
0.39
200
−
Conditions
Unit
V
V
F
IF=1A
Reverse current
I
R
µA
pF
kV
V
R
=30V
=10V, f=1MHz
C=200pF, R=0Ω 1puls
Capacitance between terminals
Electro static discharge resistance
CT
60
VR
ESD
12
−
Rev.A
1/2
RSX101M-30
Diodes
zElectrical characteristic curves (Ta=25°C)
1000
100
10
100000
1000
100
10
f=1MHz
Ta=150°C
Ta=125°C
Ta=25°C
Ta=150°C
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
10000
1000
100
10
Ta=75°C
Ta=25°C
Ta= −25°C
1
1
0
100
200
300
400
(mV)
500
0.10
10
20
30
0
10
20
30
FORWARD VOLTAGE : V
F
REVERSE VOLTAGE : V
R
(V)
REVERSE VOLTAGE : VR (V)
Fig.1 Forward Temperature
Characteristics
Fig.2 Reverse Temperature
Characteristics
Fig.3 Capacitance Between
Terminals Characteristics
1000
100
10
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
PMDU
Rth (j-a) =120°C / W
DC
DC
When mounted on a glass epoxy board.
D=1 / 2
D=1 / 2
Sin (θ=180)
Sin (θ=180)
0A
0V
IO
0A
0V
IO
V
R
V
R
t
D=t / T
=15V
Tj=150°C
D=t / T
VR=15V
Tj=150°C
t
T
V
R
T
1
0.1
1
10
100
1000
0
25
50
75
100
125
150
0
25
50
75
100
125
150
It (s)
AMBIENT TEMPERATURE : Ta (°C)
CASE TEMPERATURE : Tc (°C)
Fig.5 Derating Curve (I
O
-Ta)
Fig.6 Derating Curve (IO-Tc)
Fig.4 Thermal resistance
100
50
0
30
25
20
15
10
5
30kV Over
Ta=25°C
1puls
200pF
0Ω
100pF
1.5kΩ
Machine Model
Humanbody Model
0
1
10
100
N (Cyc)
Fig.7 Forward peak surge current
(Acctual data)
Fig.8 ESD resistance
Rev.A
2/2
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1
RSX101M-30 替代型号
型号 | 制造商 | 描述 | 替代类型 | 文档 |
DAN217T146 | ROHM | Switching Diode | 功能相似 |
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DAN217UT106 | ROHM | Switching Diode | 功能相似 |
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NRVB130T1G | ONSEMI | Surface Mount Schottky Power Rectifier | 功能相似 |
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RSX101M-30 相关器件
型号 | 制造商 | 描述 | 价格 | 文档 |
RSX101M-30TF | ROHM | Rectifier Diode, Schottky, 1 Element, 1A, 30V V(RRM), Silicon, PMDU, 2 PIN | 获取价格 |
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RSX101M-30TR | ROHM | Schottky Barrier Diode | 获取价格 |
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RSX101M-30_11 | ROHM | Schottky Barrier Diode | 获取价格 |
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RSX101MM-30 | ROHM | Rectifier Diode, Schottky, 1 Element, 1A, 30V V(RRM), Silicon, PMDU, 2 PIN | 获取价格 |
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RSX101MM-30TF | ROHM | Rectifier Diode, Schottky, 1 Element, 1A, 30V V(RRM), Silicon, | 获取价格 |
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RSX101MM-30TFTR | ROHM | Rectifier Diode, | 获取价格 |
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RSX101VA-30 | ROHM | Shottky barrier diode | 获取价格 |
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RSX101VA-30FH | ROHM | 暂无描述 | 获取价格 |
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RSX101VA-30FHTR | ROHM | Rectifier Diode, Schottky, 1 Element, 1A, 30V V(RRM), | 获取价格 |
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